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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI7230DN-T1-GE3

Name: SI7230DN-T1-GE3
Brand: Vishay Siliconix
SKU: SI7230DN-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI7230DN-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® 1212-8

Datasheet:: SI7230DN-T1-GE3.pdf

Description:: MOSFET N-CH 30V 9A PPAK 1212-8

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Product details

Overview

SI7230DN-T1-GE3 from Vishay Siliconix is a lead-free and halogen-free N-channel 30-V TrenchFET® Power MOSFET in PowerPAK® 1212-8 package, with R_DS(on) = 0.012 Ω at V_GS = 10 V, 14-A continuous drain current, and PWM-optimized switching performance for high-efficiency DC/DC converters.

For engineers reviewing the SI7230DN-T1-GE3 datasheet, SI7230DN-T1-GE3 pinout, SI7230DN-T1-GE3 application, or SI7230DN-T1-GE3 equivalent, key selection criteria include its ultra-low thermal resistance (R_thJC = 2.4 °C/W), 100% R_g tested gate resistance, and suitability as secondary synchronous rectifier or high-side switch in compact buck regulators.

Technical Context

This MOSFET employs trench-gate silicon technology to achieve low on-resistance and fast switching dynamics. Its gate charge profile (Q_g = 13.2–20 nC, Q_gd = 4.3 nC) supports efficient PWM operation at high frequencies, while the integrated body diode (V_SD = 0.8–1.1 V at I_S = 3.2 A) enables synchronous rectification without external diodes.

The PowerPAK 1212-8 package features an exposed drain pad for direct thermal conduction to the PCB, delivering R_thJA = 28–34 °C/W (10 s) and 66–81 °C/W (steady state), significantly outperforming SO-8 and TSSOP-8 alternatives in space-constrained power stages.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum drain-source blocking voltage for 12 V input rail applications with margin.
R_DS(on)	0.012 Ω @ V_GS = 10 V - Enables <170 mW conduction loss at 14 A, critical for >95 % converter efficiency.
I_D (continuous)	14 A @ T_J = 150 °C - Sustains high-current output stage operation with proper PCB copper thermal management.
Q_g	13.2–20 nC - Low total gate charge reduces driver power and switching losses in 500 kHz–1 MHz designs.
R_thJC	2.4 °C/W (max) - Enables direct junction-to-PCB heat transfer, limiting ΔT to <5 °C at 2 W dissipation.
V_GS(th)	1.0–3.0 V - Ensures robust turn-on with standard 3.3 V or 5 V logic-level gate drivers.
t_d(off)	33–50 ns - Supports fast turn-off for precise dead-time control in synchronous buck topologies.

Pinout & Package

PowerPAK® 1212-8 is a leadless surface-mount package with 3.30 mm × 3.30 mm footprint, 1.05 mm height, and exposed drain pad on bottom side for thermal conduction. Pin 1–4 are source terminals, pin 5 is gate, pins 6–8 are drain terminals.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4	Source (S)	Four parallel source connections reduce package inductance and improve current sharing in high-di/dt switching.
5	Gate (G)	Single gate input with 0.9–2.7 Ω internal gate resistance - eliminates need for external gate resistor in many layouts.
6, 7, 8	Drain (D)	Three parallel drain terminals tied to large exposed copper pad - primary thermal path to PCB ground plane.

Key Features

Feature	Design Value
TrenchFET® architecture	Delivers 0.012 Ω R_DS(on) in 3.3 mm² footprint - 2× lower on-resistance than comparable TSOP-6 MOSFETs.
PWM-optimized switching	Q_gd/Q_g ratio of ~32 % minimizes Miller-induced shoot-through risk in synchronous rectifiers.
100 % R_g tested	Guarantees gate resistance between 0.9–2.7 Ω - ensures consistent turn-on timing across production lots.
Halogen-free construction	Complies with IEC 61249-2-21 - meets RoHS and JEDEC MSL3 reflow requirements without compromising reliability.
Exposed drain thermal pad	Reduces R_thJC to 2.4 °C/W - allows 2 W dissipation with <5 °C rise above PCB temperature on 1" × 1" FR4 board.

Applications

Server VRM Output Stage	USB-C PD Adapter Secondary Side
Use Scenario: High-density 48 V to 12 V intermediate bus converter supplying CPU core voltage regulation modules. IC Role / Device Role / Timing Role: High-side synchronous MOSFET in interleaved buck topology operating at 600 kHz with 30 ns dead time. Use Value: 0.012 Ω R_DS(on) cuts conduction loss by 35 % vs. SO-8 alternative, enabling 15 % higher power density at same thermal budget.	Use Scenario: 20 V/5 A USB Power Delivery adapter with synchronous rectification on secondary winding. IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier driven by transformer-coupled gate signal, replacing Schottky diode. Use Value: Body diode forward voltage of 0.8–1.1 V and low Q_rr enable >97 % efficiency at full load, reducing heatsink requirement.
Industrial PLC Power Supply	Automotive ADAS Camera Module
Use Scenario: 24 V input industrial DC/DC module powering FPGA and analog front-end with tight EMI limits. IC Role / Device Role / Timing Role: Low-noise high-side switch in buck controller IC reference design, operating with 100 ns minimum on-time. Use Value: Fast 13–20 ns turn-on delay and 10–15 ns rise time support stable operation down to 50 ns pulse widths.	Use Scenario: Compact 12 V to 3.3 V point-of-load regulator inside automotive camera ECU with -40 °C to +125 °C ambient. IC Role / Device Role / Timing Role: Synchronous rectifier in isolated flyback secondary, leveraging low V_GS(th) for reliable start-up at cold temperatures. Use Value: Guaranteed 1.0 V minimum V_GS(th) ensures turn-on with 3.3 V gate drive even at -40 °C, eliminating bootstrapping complexity.

Server VRM Output Stage

USB-C PD Adapter Secondary Side

Use Scenario: High-density 48 V to 12 V intermediate bus converter supplying CPU core voltage regulation modules.

IC Role / Device Role / Timing Role: High-side synchronous MOSFET in interleaved buck topology operating at 600 kHz with 30 ns dead time.

Use Value: 0.012 Ω R_DS(on) cuts conduction loss by 35 % vs. SO-8 alternative, enabling 15 % higher power density at same thermal budget.

Use Scenario: 20 V/5 A USB Power Delivery adapter with synchronous rectification on secondary winding.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier driven by transformer-coupled gate signal, replacing Schottky diode.

Use Value: Body diode forward voltage of 0.8–1.1 V and low Q_rr enable >97 % efficiency at full load, reducing heatsink requirement.

Industrial PLC Power Supply

Automotive ADAS Camera Module

Use Scenario: 24 V input industrial DC/DC module powering FPGA and analog front-end with tight EMI limits.

IC Role / Device Role / Timing Role: Low-noise high-side switch in buck controller IC reference design, operating with 100 ns minimum on-time.

Use Value: Fast 13–20 ns turn-on delay and 10–15 ns rise time support stable operation down to 50 ns pulse widths.

Use Scenario: Compact 12 V to 3.3 V point-of-load regulator inside automotive camera ECU with -40 °C to +125 °C ambient.

IC Role / Device Role / Timing Role: Synchronous rectifier in isolated flyback secondary, leveraging low V_GS(th) for reliable start-up at cold temperatures.

Use Value: Guaranteed 1.0 V minimum V_GS(th) ensures turn-on with 3.3 V gate drive even at -40 °C, eliminating bootstrapping complexity.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si7231DN-T1-GE3	Same die, dual-channel version in identical PowerPAK 1212-8 package - shares all electrical specs but integrates two devices.	Used where space-constrained dual-switch topologies (e.g., half-bridge) are required instead of single high-side switch.	Select Si7231DN-T1-GE3 only when dual-channel integration reduces component count and layout area without increasing thermal coupling.
Si7157DP-T1-GE3	30 V, 0.014 Ω R_DS(on) @ 10 V, 12 A ID, in PowerPAK® 1212-8 - slightly higher on-resistance and lower current rating.	Targeted at cost-sensitive consumer power supplies where 0.2 mΩ R_DS(on) penalty is acceptable for BOM reduction.	Choose Si7157DP-T1-GE3 if thermal margin allows 0.014 Ω conduction loss and gate drive capability matches existing 5 V logic levels.

Compared with SI7230DN-T1-GE3, Si7231DN-T1-GE3 offers dual-channel integration at identical per-device performance, while Si7157DP-T1-GE3 trades 17 % higher R_DS(on) for lower unit cost - both require validation of thermal derating and gate drive strength in final layout.

Availability

SI7230DN-T1-GE3 is available at Aetrix Electronics and suitable for server VRMs, USB-C PD adapters, industrial PLC power supplies, and automotive ADAS camera modules requiring stable component supply and long-term lifecycle support.

Supply support for SI7230DN-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors and passive components, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.

The Si7230DN product line delivers high-current, low-R_DS(on) TrenchFET® MOSFETs in ultra-compact PowerPAK® packages specifically engineered for high-frequency, high-efficiency DC/DC conversion in thermally constrained environments.

FAQ

What is the maximum continuous drain current rating for SI7230DN-T1-GE3 at 70 °C ambient temperature?

The SI7230DN-T1-GE3 supports 11 A continuous drain current at T_A = 70 °C with proper PCB thermal management. This rating assumes mounting on a 1" × 1" FR4 board per Vishay's test conditions and accounts for thermal derating from the 14 A rating at 25 °C ambient. Actual current capability depends on copper area, layer stack, and airflow - refer to the R_thJA curves in the datasheet for precise thermal modeling of SI7230DN-T1-GE3 in your layout.

Does SI7230DN-T1-GE3 require an external gate resistor for typical buck converter applications?

No, SI7230DN-T1-GE3 does not require an external gate resistor in most buck converter applications because it is 100 % R_g tested with guaranteed gate resistance of 0.9–2.7 Ω. This built-in resistance provides adequate damping for gate ringing and ensures consistent switching behavior across production lots. External resistors may still be added for fine-tuning turn-on speed or EMI suppression, but they are not necessary for basic functionality of SI7230DN-T1-GE3.

Can SI7230DN-T1-GE3 be used as a synchronous rectifier with 3.3 V gate drive?

Yes, SI7230DN-T1-GE3 can be used as a synchronous rectifier with 3.3 V gate drive due to its guaranteed V_GS(th) range of 1.0–3.0 V and R_DS(on) = 0.016 Ω at V_GS = 4.5 V. At 3.3 V, it achieves partial enhancement with usable on-resistance - however, optimal performance requires ≥4.5 V drive. For 3.3 V-only systems, verify conduction loss and thermal margin using the transfer characteristics curve in the SI7230DN-T1-GE3 datasheet.

What is the recommended reflow profile for SI7230DN-T1-GE3 during PCB assembly?

The recommended lead-free reflow profile for SI7230DN-T1-GE3 specifies a peak temperature of 240 °C ± 0 °C / −5 °C, held for 20–40 seconds, with ramp-down ≤6 °C/s. Preheat must stay within 140–170 °C for up to 120 seconds, and time above 180 °C should be 70–180 seconds. This profile aligns with JEDEC J-STD-020 and is validated for SI7230DN-T1-GE3's PowerPAK® 1212-8 package - full details are in Vishay document 73257.

How does the thermal performance of SI7230DN-T1-GE3 compare to standard SO-8 MOSFETs in the same application?

SI7230DN-T1-GE3 delivers 10× lower junction-to-ambient thermal resistance than standard SO-8 MOSFETs - 66–81 °C/W (steady state) versus ~600–800 °C/W for SO-8. Its PowerPAK® 1212-8 package achieves this via an exposed drain pad directly bonded to PCB copper, reducing thermal rise to <5 °C at 2 W dissipation. In contrast, SO-8 packages exhibit >40 °C rise under identical conditions, causing significant R_DS(on) increase and efficiency loss in SI7230DN-T1-GE3-class applications.

SI7230DN-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: PowerPAK® 1212-8

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 9A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 12mOhm @ 14A, 10V

Vgs(th) (Max) @ Id:: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 20 nC @ 5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: 1.5W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® 1212-8

SI7230DN-T1-GE3 FAQ

1.How can I place an order for SI7230DN-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI7230DN-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI7230DN-T1-GE3 reliable?

The price and inventory of SI7230DN-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI7230DN-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SI7230DN-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI7230DN-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI7230DN-T1-GE3?

SI7230DN-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI7230DN-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI7230DN-T1-GE3?

For technical support, including SI7230DN-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI7230DN-T1-GE3 requirements.

6.How does Aetrix verify that SI7230DN-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SI7230DN-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI7230DN-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SI7230DN-T1-GE3?

All SI7230DN-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI7230DN-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI7230DN-T1-GE3 part is unused and in its original packaging.

Return procedure for SI7230DN-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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