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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI7356ADP-T1-E3

Name: SI7356ADP-T1-E3
Brand: Vishay Siliconix
SKU: SI7356ADP-T1-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI7356ADP-T1-E3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® SO-8

Datasheet:: SI7356ADP-T1-E3.pdf

Description:: MOSFET N-CH 30V 40A PPAK SO-8

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Product details

Overview

SI7356ADP-T1-E3 from Vishay Siliconix is an N-channel 30-V (D-S) MOSFET optimized for low-side DC/DC conversion, featuring 3.0 mΩ R_DS(on) at V_GS = 10 V, 40 A continuous drain current at T_C = 25 °C, and 46 nC total gate charge - deployed in notebook, server, and workstation power stages.

For engineers reviewing the SI7356ADP-T1-E3 datasheet, SI7356ADP-T1-E3 pinout, SI7356ADP-T1-E3 application, or SI7356ADP-T1-E3 equivalent, key selection criteria include thermal resistance (R_thJC = 1.0 °C/W), PowerPAK® SO-8 leadless package compatibility, and body diode recovery performance (t_rr = 40–70 ns).

Technical Context

This MOSFET uses Vishay's TrenchFET Gen II process to achieve ultra-low on-resistance and high-density cell layout. Its gate threshold voltage (1.0–3.0 V) enables robust 4.5 V and 10 V drive compatibility in synchronous buck topologies.

The device integrates a fast-recovery body diode (Q_rr = 40–70 nC, t_rr = 40–70 ns) and is characterized for operation across –55 °C to +150 °C junction temperature, with guaranteed 100% R_g testing and halogen-free compliance per ordering variant.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - maximum blocking voltage compatible with 24 V input rails and transient margin in point-of-load converters
R_DS(on)	0.003 Ω at V_GS = 10 V - enables <1 W conduction loss at 20 A, critical for high-efficiency low-voltage output stages
I_D (continuous)	40 A at T_C = 25 °C - supports high-current CPU/GPU VRMs without parallel devices
Q_g	46 nC at V_GS = 4.5 V - balances switching speed and gate driver loading in 300–1000 kHz applications
R_thJC	1.0 °C/W (typical) - allows direct heatsink mounting to drain pad for thermal management in compact layouts
t_rr	40–70 ns - reduces body diode reverse recovery losses during hard-switched freewheeling

Pinout & Package

SI7356ADP-T1-E3 is housed in the PowerPAK® SO-8 - a leadless surface-mount package with exposed copper drain pad on bottom side, 6.15 mm × 5.15 mm footprint, and 1.07 mm profile. The package delivers low thermal resistance and high power density for space-constrained DC/DC modules.

Pin/Terminal	Circuit Role	Design Meaning
1 (S)	Source	Low-side switch return path; tied to ground plane in buck converter low-side position
2 (G)	Gate	Control terminal requiring 4.5–10 V drive; 100% R_g tested for consistent turn-on timing
3 (S)	Source	Second source connection for reduced bond-wire inductance and improved current sharing
4 (G)	Gate	Redundant gate terminal for low-inductance gate loop routing in high-frequency designs
5–8 (D)	Drain	Four paralleled drain terminals connected to exposed bottom copper pad - primary thermal and current path to PCB heatsink

Key Features

Feature	Design Value
Ultra-low R_DS(on)	0.003 Ω @ 10 V enables >95% efficiency in 12 V → 1.2 V VRMs at 40 A
PowerPAK® SO-8 package	1.07 mm height and exposed drain pad reduce thermal impedance by 4× vs. standard SO-8
Body diode t_rr & Q_rr	40–70 ns / 40–70 nC minimizes shoot-through risk and EMI in synchronous rectification
100% R_g tested	Ensures gate resistance between 0.5–1.5 Ω - critical for predictable dV/dt control and EMI reduction

Applications

Notebook VRM Low-Side Switch	Server CPU Voltage Regulator
Use Scenario: High-current, high-frequency buck converter supplying core voltage to mobile Intel/AMD processors. IC Role / Device Role / Timing Role: Low-side synchronous rectifier operating at 500–1000 kHz with 40 A peak load current. Use Value: 3.0 mΩ R_DS(on) cuts conduction loss by 35% vs. legacy 4.5 mΩ MOSFETs, reducing thermal stress on motherboard layers.	Use Scenario: Multiphase VRM delivering up to 200 A to dual-socket Xeon platforms with tight thermal envelopes. IC Role / Device Role / Timing Role: Parallel low-side switch in 3+ phase topology, driven by dedicated gate controller. Use Value: 1.0 °C/W R_thJC enables direct thermal coupling to internal copper planes, eliminating need for external heatsinks.
Workstation GPU Power Stage	Point-of-Load Converter for FPGA
Use Scenario: Compact 12 V input → 0.8–1.2 V output converter powering discrete graphics processing units. IC Role / Device Role / Timing Role: Low-side switch in interleaved two-phase design with <100 ns dead-time requirements. Use Value: 46 nC Q_g at 4.5 V ensures full turn-on within 50 ns using 1 A gate drivers, supporting tight dead-time control.	Use Scenario: Board-mounted POL module supplying configurable I/O or core voltage to Xilinx/Intel FPGAs. IC Role / Device Role / Timing Role: Final-stage low-side MOSFET in 300 kHz fixed-frequency buck regulator with dynamic load steps. Use Value: Fast body diode recovery (t_rr ≤ 70 ns) suppresses voltage spikes during load transients, improving output regulation stability.

Notebook VRM Low-Side Switch

Server CPU Voltage Regulator

Use Scenario: High-current, high-frequency buck converter supplying core voltage to mobile Intel/AMD processors.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier operating at 500–1000 kHz with 40 A peak load current.

Use Value: 3.0 mΩ R_DS(on) cuts conduction loss by 35% vs. legacy 4.5 mΩ MOSFETs, reducing thermal stress on motherboard layers.

Use Scenario: Multiphase VRM delivering up to 200 A to dual-socket Xeon platforms with tight thermal envelopes.

IC Role / Device Role / Timing Role: Parallel low-side switch in 3+ phase topology, driven by dedicated gate controller.

Use Value: 1.0 °C/W R_thJC enables direct thermal coupling to internal copper planes, eliminating need for external heatsinks.

Workstation GPU Power Stage

Point-of-Load Converter for FPGA

Use Scenario: Compact 12 V input → 0.8–1.2 V output converter powering discrete graphics processing units.

IC Role / Device Role / Timing Role: Low-side switch in interleaved two-phase design with <100 ns dead-time requirements.

Use Value: 46 nC Q_g at 4.5 V ensures full turn-on within 50 ns using 1 A gate drivers, supporting tight dead-time control.

Use Scenario: Board-mounted POL module supplying configurable I/O or core voltage to Xilinx/Intel FPGAs.

IC Role / Device Role / Timing Role: Final-stage low-side MOSFET in 300 kHz fixed-frequency buck regulator with dynamic load steps.

Use Value: Fast body diode recovery (t_rr ≤ 70 ns) suppresses voltage spikes during load transients, improving output regulation stability.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLHS6342TRPBF	R_DS(on) = 3.2 mΩ @ 4.5 V; Q_g = 37 nC; PowerPAIR® 3.3 × 3.3 mm package	Smaller footprint but higher R_thJA (40 °C/W); limited to ≤25 A continuous in same board area	Preferred for ultra-compact POL where board area is constrained more than thermal budget
DMTH3004LPSQ-13	R_DS(on) = 2.8 mΩ @ 10 V; Q_g = 52 nC; PowerSO-8 package with gull-wing leads	Leaded package eases rework but adds 0.5 nH parasitic inductance; R_thJC = 1.3 °C/W	Chosen when manual rework capability or legacy assembly infrastructure is required

Compared with IRLHS6342TRPBF and DMTH3004LPSQ-13, SI7356ADP-T1-E3 offers the lowest R_thJC and best balance of gate charge and on-resistance for thermally demanding, high-current low-side switching - making it optimal for server and workstation VRMs where thermal headroom is critical.

Availability

SI7356ADP-T1-E3 is available at Aetrix Electronics and suitable for notebook VRMs, server CPU voltage regulators, and workstation GPU power stages requiring stable component supply, long-term lifecycle support, and RoHS-compliant manufacturing.

Supply support for SI7356ADP-T1-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, optoelectronics, and passive components with emphasis on power efficiency and reliability.

The Si7356ADP product line targets high-performance power conversion in computing and communications infrastructure, engineered specifically for low-R_DS(on), low-Q_g, and thermally optimized packaging in synchronous buck topologies.

FAQ

What is the maximum continuous drain current rating for SI7356ADP-T1-E3 at 70 °C case temperature?

The SI7356ADP-T1-E3 supports 32 A continuous drain current at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits under steady-state conduction, and assumes proper PCB copper area and thermal vias beneath the exposed drain pad. The SI7356ADP-T1-E3 must be mounted on FR4 with ≥1" × 1" 2-oz copper for this rating to be valid.

Does SI7356ADP-T1-E3 have a halogen-free version, and how does it differ?

Yes - the halogen-free variant is SI7356ADP-T1-GE3, explicitly listed in the Ordering Information section. It shares identical electrical specifications, package, and pinout with SI7356ADP-T1-E3, differing only in material composition to meet IEC 61249-2-21 requirements. No performance or layout changes are needed when substituting SI7356ADP-T1-GE3 for SI7356ADP-T1-E3.

Can SI7356ADP-T1-E3 be used in high-frequency switching applications above 1 MHz?

The SI7356ADP-T1-E3 is characterized up to 1 MHz in typical applications, with 46 nC gate charge at 4.5 V enabling efficient operation at 500–800 kHz. While usable above 1 MHz, switching losses increase significantly beyond that range due to Q_gd/Q_gs ratio and C_oss behavior. For >1 MHz designs, the SI7356ADP-T1-E3 should be evaluated with measured waveforms and thermal validation - its datasheet does not guarantee performance beyond 1 MHz.

What is the recommended soldering profile for SI7356ADP-T1-E3?

The SI7356ADP-T1-E3 requires a peak reflow temperature of 260 °C per the Soldering Recommendations section. As a leadless PowerPAK® SO-8, it follows IPC/JEDEC J-STD-020D guidelines. Manual soldering with an iron is not recommended. Reflow profiles must avoid thermal shock; see Vishay document 73257 for full details. The SI7356ADP-T1-E3 end-of-lead copper exposure does not require solder fillet formation for reliability.

Is SI7356ADP-T1-E3 suitable for automotive applications?

No - the SI7356ADP-T1-E3 is not qualified to AEC-Q101 or automotive-grade reliability standards. Its datasheet specifies operation from –55 °C to +150 °C, but qualification data, failure-in-time (FIT) rates, and stress test reports for automotive use are not provided. For automotive low-side switching, Vishay recommends AEC-Q101-qualified alternatives such as SQJQ412E or SI7862DP-T1-GE3 instead of SI7356ADP-T1-E3.

SI7356ADP-T1-E3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: PowerPAK® SO-8

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 40A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 3mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 145 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 6215 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 5.4W (Ta), 83W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® SO-8

SI7356ADP-T1-E3 FAQ

1.How can I place an order for SI7356ADP-T1-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI7356ADP-T1-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI7356ADP-T1-E3 reliable?

The price and inventory of SI7356ADP-T1-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI7356ADP-T1-E3 is usually 5 days.

3.What payment methods are accepted for SI7356ADP-T1-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI7356ADP-T1-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI7356ADP-T1-E3?

SI7356ADP-T1-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI7356ADP-T1-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI7356ADP-T1-E3?

For technical support, including SI7356ADP-T1-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI7356ADP-T1-E3 requirements.

6.How does Aetrix verify that SI7356ADP-T1-E3 is sourced from the original manufacturer or authorized distributors?

All SI7356ADP-T1-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI7356ADP-T1-E3 meets industry standards.

7.What is the process for return or replacement of SI7356ADP-T1-E3?

All SI7356ADP-T1-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SI7356ADP-T1-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI7356ADP-T1-E3 part is unused and in its original packaging.

Return procedure for SI7356ADP-T1-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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