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Vishay Siliconix SI7390DP-T1-GE3
- Part No.:
- SI7390DP-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SI7390DP-T1-GE3.pdf
- Description:
- MOSFET N-CH 30V 9A PPAK SO-8
- Quantity:
- Payment:
- Shipping:
Inventory:7,206
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Product details
Overview
SI7390DP-T1-GE3 from Vishay Siliconix is an N-channel 30 V (D-S) TrenchFET® power MOSFET in PowerPAK® SO-8 package, featuring RDS(on) = 9.5 mΩ at VGS = 10 V, Qg = 10 nC typ., and 15 A continuous drain current - optimized for high-side DC/DC conversion in notebook and server power stages.
For engineers reviewing the SI7390DP-T1-GE3 datasheet, SI7390DP-T1-GE3 pinout, SI7390DP-T1-GE3 application, or SI7390DP-T1-GE3 equivalent, key selection criteria include low gate charge for fast switching, ultra-low RDS(on) at 4.5 V for 5 V gate drive compatibility, and PowerPAK SO-8's 1.07 mm profile with exposed drain thermal pad for enhanced board-level heat dissipation.
Technical Context
This MOSFET employs trench-gate silicon technology to achieve extremely low Qgd (2.1 nC typ.) and RDS(on) of 13.5 mΩ at VGS = 4.5 V, enabling efficient operation in synchronous buck converters with 5 V gate drivers. Its 30 V VDS rating supports 24 V input rails with margin.
The PowerPAK SO-8 package delivers RthJC = 2.1 °C/W (typ.) and matches standard SO-8 footprint while exposing the drain pad on the bottom surface - enabling direct thermal coupling to PCB copper without requiring through-hole vias or heatsinks.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - Supports 24 V nominal input rails with 25 % voltage margin for transient spikes. |
| RDS(on) @ 10 V | 9.5 mΩ max - Enables <1.5 W conduction loss at 15 A, critical for high-current point-of-load stages. |
| RDS(on) @ 4.5 V | 13.5 mΩ max - Ensures full enhancement with 5 V logic-level gate drive, eliminating need for level shifters. |
| Qg | 10 nC typ. - Reduces switching energy loss and enables >1 MHz operation in high-frequency DC/DC converters. |
| Qgd | 2.1 nC typ. - Minimizes Miller-induced switching delay and improves dv/dt immunity in hard-switched topologies. |
| ID (continuous) | 15 A @ TA = 25 °C - Rated for sustained current in compact 1" × 1" FR4 layouts with standard reflow profiles. |
| RthJA (steady state) | 53 °C/W - Validated on 1" × 1" FR4 board; enables junction temperature control below 125 °C at 2.5 W dissipation. |
Pinout & Package
SI7390DP-T1-GE3 is housed in a leadless PowerPAK® SO-8 package (5.15 mm × 6.15 mm × 1.07 mm), with exposed drain terminals on the bottom surface for thermal conduction and standard SO-8 pin-compatible layout.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 | Source (S) | Four parallel source connections reduce source inductance and improve current sharing in high-di/dt switching. |
| 5, 6, 7, 8 | Drain (D) | Exposed copper drain pad on bottom surface provides primary thermal path to PCB; no plating required. |
| G (pin 3 side, top view) | Gate (G) | Single gate terminal located adjacent to source pins - minimizes gate loop inductance for stable high-speed switching. |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® silicon process | Delivers 30 % lower RDS(on) vs. planar MOSFETs of same die size, enabling higher current density in SO-8 footprint. |
| PowerPAK® SO-8 package | Matches standard SO-8 land pattern but replaces leads with exposed drain pad - reduces RthJA by 50 % vs. legacy SO-8. |
| 100 % Rg tested | Ensures gate resistance between 0.2–1.4 Ω - guarantees consistent turn-on timing and eliminates batch-to-batch timing skew. |
| Low Qgd/Qg ratio | 0.21 (2.1/10) - suppresses Miller plateau duration, improving controllability during hard commutation events. |
| 100 % avalanche rated | Rated for repetitive unclamped inductive switching (UIS) - supports robust operation in non-synchronous flyback or boost converters. |
Applications
| High-Side Synchronous Buck Converter | Point-of-Load (POL) Regulator |
|---|---|
|
Use Scenario: Primary high-side switch in 12 V → 1.2 V, 15 A VRM for CPU core supply in enterprise servers. IC Role / Device Role / Timing Role: High-side power switch operating at 500 kHz with 5 V gate drive from integrated controller. Use Value: 9.5 mΩ RDS(on) limits conduction loss to 2.1 W; low Qg enables clean 10 ns rise time without gate driver oversizing. |
Use Scenario: Compact 5 V → 3.3 V, 10 A POL module on industrial PLC I/O card with space-constrained layout. IC Role / Device Role / Timing Role: Main switching FET in monolithic buck converter IC supporting 4.5 V minimum input. Use Value: 13.5 mΩ RDS(on) at 4.5 V ensures full enhancement without external gate bias; 1.07 mm height fits under 1.2 mm connector stack-up. |
| Notebook System Power Rail | Workstation GPU Voltage Regulator |
|
Use Scenario: High-efficiency 19 V → 5 V intermediate bus converter in ultrabook mainboard with thermal budget ≤ 40 °C rise. IC Role / Device Role / Timing Role: High-side FET in dual-phase interleaved buck stage driven by PWM controller with 10 V gate output. Use Value: PowerPAK SO-8's 2.1 °C/W RthJC allows >85 % efficiency at full load while maintaining TJ < 110 °C on 2-layer FR4. |
Use Scenario: 12 V → 0.8 V, 40 A multiphase VR for discrete GPU on high-performance workstation motherboard. IC Role / Device Role / Timing Role: One phase of four parallel high-side switches synchronized to 1 MHz switching frequency. Use Value: Low Qgd (2.1 nC) minimizes shoot-through risk during phase interleaving; 15 A rating supports per-phase current derating to 10 A. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 30 V power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si7850DP-T1-GE3 | RDS(on) = 6.5 mΩ @ 10 V; Qg = 14.5 nC; same PowerPAK SO-8 package | Higher conduction efficiency but slower switching due to +45 % Qg; better suited for <300 kHz applications | Select when minimizing I²R loss dominates over switching loss - e.g., high-duty-cycle POLs with limited thermal headroom. |
| IRF7470PBF | RDS(on) = 11.5 mΩ @ 10 V; Qg = 12 nC; standard SO-8 package (no exposed drain) | Higher RthJA (70 °C/W vs. 53 °C/W); requires larger PCB copper area to match thermal performance | Choose only if legacy SO-8 footprint reuse is mandatory and thermal margin ≥ 25 °C is available at full load. |
Compared with Si7850DP-T1-GE3, SI7390DP-T1-GE3 trades 3 mΩ higher RDS(on) for 4.5 nC lower Qg, favoring high-frequency designs; versus IRF7470PBF, it delivers 33 % lower thermal resistance without changing board layout - directly improving reliability in thermally dense server modules.
Availability
SI7390DP-T1-GE3 is available at Aetrix Electronics and suitable for notebook power supplies, server VRMs, and industrial POL regulators requiring stable component supply, Pb-free/halogen-free compliance, and long-term production continuity.
Supply support for SI7390DP-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.
The SI7390DP-T1-GE3 belongs to Vishay's PowerPAK® SO-8 TrenchFET® family, engineered specifically for high-current, high-frequency DC/DC conversion where thermal density and gate drive simplicity are critical constraints.
FAQ
What is the maximum continuous drain current rating for SI7390DP-T1-GE3 at 70 °C ambient?
The SI7390DP-T1-GE3 supports 7 A continuous drain current at TA = 70 °C, as specified in its Absolute Maximum Ratings table. This derating accounts for thermal limitations on standard 1" × 1" FR4 boards without additional copper spreading. At board temperatures above 70 °C, further current reduction is required to maintain TJ ≤ 150 °C - SI7390DP-T1-GE3's thermal design enables this via its 2.1 °C/W RthJC.
Does SI7390DP-T1-GE3 require special reflow soldering conditions compared to standard SO-8 packages?
SI7390DP-T1-GE3 uses standard Pb-free reflow profiles per JEDEC J-STD-020, with peak temperature of 255 °C for 30 s - identical to qualified SO-8 components. However, because the PowerPAK SO-8 has an exposed copper drain pad, solder fillet formation at the pad edge is not guaranteed or required; full bottom-side interconnection is achieved via the entire pad surface, not perimeter wetting. Manual soldering with iron is not recommended.
Can SI7390DP-T1-GE3 be used as a direct replacement for a standard SO-8 MOSFET on existing PCBs?
Yes - SI7390DP-T1-GE3 shares identical footprint, pinout, and land pattern compatibility with standard SO-8 devices, allowing drop-in replacement without layout changes. Its exposed drain pad contacts the same copper area as SO-8 leads, delivering immediate thermal improvement (up to 10 °C/W lower RthJA) on legacy boards. No trace routing modifications are needed, though avoiding traces under the body is advised.
What is the gate threshold voltage range for SI7390DP-T1-GE3, and how does it affect 5 V gate drive?
The SI7390DP-T1-GE3 has a gate threshold voltage (VGS(th)) range of 0.8 V to 3.0 V at TJ = 25 °C. With 5 V gate drive, the device fully enhances well within specification - confirmed by its RDS(on) = 13.5 mΩ max at VGS = 4.5 V and ID = 13 A. This ensures robust turn-on margin across temperature and process variation, eliminating need for gate boosting in 5 V systems.
Is SI7390DP-T1-GE3 suitable for reverse polarity protection circuits?
No - SI7390DP-T1-GE3 is a single N-channel MOSFET with no integrated body diode optimization for reverse blocking. Its intrinsic body diode has VSD = 0.7–1.1 V and is rated for 4.1 A forward current only; it lacks the low VF and high surge capability required for reliable reverse polarity protection. For that function, dedicated P-channel or ideal diode controllers paired with appropriate FETs are recommended instead of SI7390DP-T1-GE3.
SI7390DP-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 9A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 9.5mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id:
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 15 nC @ 4.5 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- 1.8W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8
SI7390DP-T1-GE3 FAQ
1.How can I place an order for SI7390DP-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI7390DP-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI7390DP-T1-GE3 reliable?
The price and inventory of SI7390DP-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI7390DP-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SI7390DP-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI7390DP-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI7390DP-T1-GE3?
SI7390DP-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI7390DP-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI7390DP-T1-GE3?
For technical support, including SI7390DP-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI7390DP-T1-GE3 requirements.
6.How does Aetrix verify that SI7390DP-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SI7390DP-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI7390DP-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SI7390DP-T1-GE3?
All SI7390DP-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI7390DP-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI7390DP-T1-GE3 part is unused and in its original packaging.
Return procedure for SI7390DP-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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