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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI7392DP-T1-GE3

Name: SI7392DP-T1-GE3
Brand: Vishay Siliconix
SKU: SI7392DP-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI7392DP-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® SO-8

Datasheet:: SI7392DP-T1-GE3.pdf

Description:: MOSFET N-CH 30V 9A PPAK SO-8

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Product details

Overview

SI7392DP-T1-GE3 from Vishay Siliconix is an N-channel TrenchFET® power MOSFET in PowerPAK® SO-8 package, rated for 30 V V_DS, 15 A continuous drain current at T_J = 150 °C, and R_DS(on) = 9.75 mΩ at V_GS = 10 V. It delivers low switching losses via extremely low Q_gd (2.6 nC) and supports high-side DC/DC conversion in notebook and server power stages.

For engineers reviewing the SI7392DP-T1-GE3 datasheet, SI7392DP-T1-GE3 pinout, SI7392DP-T1-GE3 application, or SI7392DP-T1-GE3 equivalent, key selection criteria include its 1.07 mm low-profile PowerPAK SO-8 thermal performance (R_thJC = 4.5 °C/W max), 100 % UIS testing, halogen-free compliance per IEC 61249-2-21, and validated operation under pulsed drain currents up to ±50 A.

Technical Context

This MOSFET employs trench-gate silicon technology optimized for fast switching and reduced gate charge. Its dynamic parameters-Q_g = 15 nC typ., Q_gd = 2.6 nC, and t_f = 17 ns max-enable efficient operation in synchronous buck converters operating above 300 kHz.

The device integrates a body diode with V_SD = 1.1 V max at I_S = 4.1 A and exhibits tight V_GS(th) distribution (1.0–3.0 V), supporting robust gate drive margin in 4.5 V–10 V logic-level systems. Thermal design is facilitated by R_thJA = 70 °C/W max (steady-state) and R_thJC = 4.5 °C/W max.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage compatible with 24 V input rail systems and 12 V intermediate bus architectures
R_DS(on) @ V_GS = 10 V	9.75 mΩ - Enables ≤1.5 W conduction loss at 15 A, critical for thermally constrained notebook VRMs
R_DS(on) @ V_GS = 4.5 V	13.75 mΩ - Ensures usable on-resistance with standard 5 V logic drivers in space-constrained server POLs
Q_gd	2.6 nC - Minimizes Miller-induced switching delay and dv/dt-induced shoot-through risk in high-frequency sync-buck stages
I_D (continuous, T_J = 150 °C)	15 A - Supports high-current CPU/GPU core rails without forced airflow in thin-client platforms
R_thJC	4.5 °C/W max - Allows direct thermal coupling to PCB copper pour or heatsink for junction temperature control below 125 °C
E_AS	45 mJ - Withstands single-pulse inductive energy events common in hot-swap and load-dump conditions

Pinout & Package

SI7392DP-T1-GE3 uses the leadless PowerPAK® SO-8 package (6.15 mm × 5.15 mm, 1.07 mm height), with exposed drain pads on the bottom side for enhanced thermal conduction. The top-side marking includes "7392" and date code; soldering requires peak reflow at 260 °C per JEDEC J-STD-020.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control terminal accepting 0–20 V gate-source bias; low R_g (2.7 Ω max) enables fast turn-on with minimal external gate resistor
2 (S)	Source	Reference node for gate drive and current sensing; tied to power ground in high-side configuration
3 (S)	Source	Second source connection reducing source inductance and improving current sharing in parallel layouts
4 (S)	Source	Third source connection providing low-inductance return path for high di/dt switching currents
5 (D)	Drain	Main power output node; internally connected to bottom-side copper pad for thermal and electrical conduction
6 (D)	Drain	Second drain connection enhancing current capacity and reducing package resistance
7 (D)	Drain	Third drain connection distributing high pulsed current (±50 A) across multiple paths
8 (D)	Drain	Fourth drain connection minimizing voltage drop during transient load steps in multi-phase VRMs

Key Features

Feature	Design Value
Extremely low Q_gd	2.6 nC - Reduces Miller plateau duration and improves controllability during hard-switching transitions
TrenchFET® architecture	Enables <10 mΩ R_DS(on) at 30 V while maintaining >30 V breakdown margin and low gate charge
100 % UIS tested	Guarantees ruggedness against unclamped inductive switching stress without derating in real-world POL designs
Halogen-free construction	Complies with IEC 61249-2-21 and RoHS Directive 2002/95/EC for environmentally regulated end equipment
Low thermal resistance package	R_thJC = 4.5 °C/W max - Enables direct thermal interface to heatsink or internal PCB copper, reducing system thermal footprint

Applications

Notebook CPU Core VRM	Server Point-of-Load Converter
Use Scenario: High-efficiency, space-constrained voltage regulation for Intel Core i7/i9 processors in ultrathin notebooks. IC Role / Device Role / Timing Role: High-side synchronous rectifier in 300–600 kHz multiphase buck converter, switching 15 A peak per phase. Use Value: 9.75 mΩ R_DS(on) at 10 V and 2.6 nC Q_gd reduce both conduction and switching losses, enabling >92 % efficiency at 1.0 V/15 A output.	Use Scenario: Single-phase 12 V-to-0.85 V conversion for ASIC/FPGA power domains in 1U rack servers. IC Role / Device Role / Timing Role: High-side switch in 500 kHz buck stage driving up to 13 A continuous load with 4.5 V gate drive. Use Value: 13.75 mΩ R_DS(on) at 4.5 V ensures stable operation with standard logic-level drivers, eliminating need for gate boosters.
Industrial PLC Power Module	Telecom Baseband Processor Supply
Use Scenario: Compact 24 V input DC/DC module powering ARM-based controllers in DIN-rail mounted PLCs. IC Role / Device Role / Timing Role: Primary high-side switch in isolated flyback or non-isolated buck topology delivering 5 V/8 A output. Use Value: 45 mJ E_AS rating withstands inductive kickback from solenoid loads, improving field reliability without snubbers.	Use Scenario: Low-noise, high-transient-response supply for 5G baseband SoCs requiring sub-100 ns load-step response. IC Role / Device Role / Timing Role: High-side switch in dual-phase interleaved buck regulator operating at 1 MHz with 15 A total output. Use Value: 1.07 mm profile and 6.15 mm × 5.15 mm footprint allow dense layout adjacent to SoC BGA, minimizing loop inductance.

Notebook CPU Core VRM

Server Point-of-Load Converter

Use Scenario: High-efficiency, space-constrained voltage regulation for Intel Core i7/i9 processors in ultrathin notebooks.

IC Role / Device Role / Timing Role: High-side synchronous rectifier in 300–600 kHz multiphase buck converter, switching 15 A peak per phase.

Use Value: 9.75 mΩ R_DS(on) at 10 V and 2.6 nC Q_gd reduce both conduction and switching losses, enabling >92 % efficiency at 1.0 V/15 A output.

Use Scenario: Single-phase 12 V-to-0.85 V conversion for ASIC/FPGA power domains in 1U rack servers.

IC Role / Device Role / Timing Role: High-side switch in 500 kHz buck stage driving up to 13 A continuous load with 4.5 V gate drive.

Use Value: 13.75 mΩ R_DS(on) at 4.5 V ensures stable operation with standard logic-level drivers, eliminating need for gate boosters.

Industrial PLC Power Module

Telecom Baseband Processor Supply

Use Scenario: Compact 24 V input DC/DC module powering ARM-based controllers in DIN-rail mounted PLCs.

IC Role / Device Role / Timing Role: Primary high-side switch in isolated flyback or non-isolated buck topology delivering 5 V/8 A output.

Use Value: 45 mJ E_AS rating withstands inductive kickback from solenoid loads, improving field reliability without snubbers.

Use Scenario: Low-noise, high-transient-response supply for 5G baseband SoCs requiring sub-100 ns load-step response.

IC Role / Device Role / Timing Role: High-side switch in dual-phase interleaved buck regulator operating at 1 MHz with 15 A total output.

Use Value: 1.07 mm profile and 6.15 mm × 5.15 mm footprint allow dense layout adjacent to SoC BGA, minimizing loop inductance.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLML6344TRPBF	R_DS(on) = 12.5 mΩ @ 4.5 V; Q_gd = 3.2 nC; SOT-23 package (1.5 A max I_D)	Lower current rating limits use to ≤3 A loads; unsuitable for 15 A VRMs	Select only for low-power auxiliary rails where footprint and cost outweigh current capability
DMN3025LSD-13	R_DS(on) = 9.5 mΩ @ 10 V; Q_gd = 3.0 nC; PowerDI 3333 package (R_thJC = 5.0 °C/W)	Higher thermal resistance and larger 3.3 mm × 3.3 mm footprint reduces power density vs. PowerPAK SO-8	Prefer when board-level rework tolerance is prioritized over thermal performance and size

Compared with IRLML6344TRPBF and DMN3025LSD-13, SI7392DP-T1-GE3 provides superior current handling (15 A), lower Q_gd, and best-in-class thermal resistance in a compact 6.15 mm × 5.15 mm footprint-making it optimal for high-density, high-efficiency notebook and server VRMs where thermal headroom and switching speed are critical.

Availability

SI7392DP-T1-GE3 is available at Aetrix Electronics and suitable for notebook CPU core VRMs, server point-of-load converters, and industrial PLC power modules requiring stable component supply, halogen-free compliance, and proven UIS ruggedness.

Supply support for SI7392DP-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, optoelectronics, and passive components with emphasis on power efficiency and reliability.

The Si7392DP product line targets high-frequency, high-current DC/DC conversion in portable and datacenter computing, engineered for low Q_gd, ultra-low R_DS(on), and robust avalanche performance in thermally demanding environments.

FAQ

What is the maximum continuous drain current rating for SI7392DP-T1-GE3 at 70 °C ambient temperature?

The SI7392DP-T1-GE3 supports 12 A continuous drain current at T_A = 70 °C, as specified in its Absolute Maximum Ratings table. This value accounts for thermal derating due to ambient temperature rise and assumes proper PCB copper area per Vishay's recommended layout. The device maintains full functionality within this limit without exceeding its 150 °C maximum junction temperature.

Does SI7392DP-T1-GE3 require a gate driver IC for operation at 500 kHz switching frequency?

SI7392DP-T1-GE3 can operate at 500 kHz with a standard 5 V logic-level gate driver due to its low Q_g (15 nC typ.) and Q_gd (2.6 nC). A driver capable of sourcing/sinking ≥2 A peak current minimizes switching transition times; no dedicated high-speed gate driver IC is mandatory, though one improves efficiency in high-current multi-phase designs.

Is SI7392DP-T1-GE3 suitable for high-side synchronous rectification in a buck converter?

Yes, SI7392DP-T1-GE3 is explicitly designed for high-side DC/DC conversion, as confirmed in its Applications section. Its 30 V V_DS, low R_DS(on), and fast switching characteristics (t_f = 17 ns max) make it well-suited for high-side synchronous rectification in buck converters powering CPUs and FPGAs.

What is the gate threshold voltage range for SI7392DP-T1-GE3, and how does it affect 4.5 V gate drive compatibility?

The SI7392DP-T1-GE3 has a V_GS(th) range of 1.0 V to 3.0 V, ensuring reliable turn-on with 4.5 V gate drive. At this voltage, it achieves R_DS(on) = 13.75 mΩ, confirming strong enhancement-mode behavior and sufficient overdrive margin to avoid linear-region operation during transients.

How does the PowerPAK SO-8 package of SI7392DP-T1-GE3 improve thermal performance compared to standard SO-8?

The PowerPAK SO-8 package of SI7392DP-T1-GE3 features an exposed copper drain pad on the bottom side, reducing R_thJC to 4.5 °C/W max-nearly half that of standard SO-8 packages. This allows direct thermal transfer to PCB copper or heatsinks, lowering junction temperature by up to 25 °C under identical 15 A load conditions.

SI7392DP-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: PowerPAK® SO-8

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 9A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 9.75mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 15 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: 1.8W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® SO-8

SI7392DP-T1-GE3 FAQ

1.How can I place an order for SI7392DP-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI7392DP-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI7392DP-T1-GE3 reliable?

The price and inventory of SI7392DP-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI7392DP-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SI7392DP-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI7392DP-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI7392DP-T1-GE3?

SI7392DP-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI7392DP-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI7392DP-T1-GE3?

For technical support, including SI7392DP-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI7392DP-T1-GE3 requirements.

6.How does Aetrix verify that SI7392DP-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SI7392DP-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI7392DP-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SI7392DP-T1-GE3?

All SI7392DP-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI7392DP-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI7392DP-T1-GE3 part is unused and in its original packaging.

Return procedure for SI7392DP-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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