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Vishay Siliconix SI7405BDN-T1-GE3
- Part No.:
- SI7405BDN-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® 1212-8
- Datasheet:
-
SI7405BDN-T1-GE3.pdf
- Description:
- MOSFET P-CH 12V 16A PPAK1212-8
- Quantity:
- Payment:
- Shipping:
Inventory:3,970
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Product details
Overview
SI7405BDN-T1-GE3 from Vishay Siliconix is a P-channel enhancement-mode TrenchFET® power MOSFET in PowerPAK 1212-8 package, rated for -12 V VDS, 0.013 Ω RDS(on) at -4.5 V VGS, and -16 A continuous drain current (package-limited). It serves as a high-efficiency load switch in portable device power management circuits.
For engineers reviewing the SI7405BDN-T1-GE3 datasheet, SI7405BDN-T1-GE3 pinout, SI7405BDN-T1-GE3 application, or SI7405BDN-T1-GE3 equivalent, key selection criteria include its low gate threshold (-1.0 V typ.), ultra-low RDS(on) at 1.8 V drive, halogen-free and lead-free compliance, and thermal performance enabled by exposed-drain PowerPAK packaging.
Technical Context
This MOSFET uses trench-gate silicon technology to achieve high channel density and low on-resistance with minimal gate charge (46 nC typ. at -4.5 V). Its negative VGS(th) (-0.4 to -1.0 V) enables direct logic-level control from 1.8 V/2.5 V/3.3 V microcontrollers without level shifting.
The PowerPAK 1212-8 package integrates an exposed drain pad for low thermal resistance (RthJC = 2.9 °C/W typ.) and supports high-current switching with minimal board area. Body diode recovery (trr = 50–75 ns, Qrr = 30–45 nC) is optimized for synchronous rectification and reverse polarity protection.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -12 V - Maximum blocking voltage for low-voltage battery-side load switching |
| RDS(on) @ VGS = -4.5 V | 0.013 Ω - Enables <15 mW conduction loss at 13.5 A, critical for portable thermal budget |
| ID (continuous) | -16 A - Package-limited current capacity; usable up to 13.5 A at TC = 25 °C |
| Qg (total gate charge) | 46 nC @ -4.5 V - Low drive energy requirement for fast turn-on in battery-powered systems |
| VGS(th) | -0.4 to -1.0 V - Ensures full enhancement with 1.8 V GPIO, eliminating need for external bias |
| RthJC | 2.9 °C/W (typ.) - Direct thermal path from junction to PCB enables >2× power handling vs. TSSOP-8 |
| Body diode VSD | -0.8 to -1.2 V @ -10 A - Low forward drop supports efficient reverse-polarity protection |
Pinout & Package
PowerPAK 1212-8 is a leadless, surface-mount package with exposed drain pad on bottom side. Dimensions: 3.30 mm × 3.30 mm × 1.05 mm. Drain terminals are electrically common and thermally coupled to the PCB copper for enhanced heat dissipation.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 | Drain (D) | Common high-current output node; electrically and thermally connected to exposed bottom pad |
| 5 | Source (S) | Return path for load current; tied to system ground or battery negative in high-side switch configs |
| 6 | Gate (G) | Control input; requires <100 nA leakage current and drives 46 nC total charge |
| 7, 8 | Drain (D) | Redundant drain connections; must be soldered to same PCB copper pour as pins 1–4 for thermal integrity |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® technology | Delivers 0.013 Ω RDS(on) in 3.3 mm² footprint-enables compact, high-current load switches |
| Logic-level gate drive | VGS(th) down to -0.4 V ensures reliable turn-on with 1.8 V microcontroller outputs |
| Halogen-free & Pb-free | Meets IPC/JEDEC J-STD-609A Class 1 and RoHS Directive 2011/65/EU requirements |
| Optimized body diode | trr = 50–75 ns and Qrr = 30–45 nC support efficient reverse-current handling in USB-C PD and battery protection |
| PowerPAK 1212-8 thermal design | RthJC = 2.9 °C/W allows >3× higher power density than TSSOP-8 while reducing board area by 40 % |
Applications
| USB-C Port Protection | Smartphone Battery Disconnect |
|---|---|
Use Scenario: Prevents reverse current flow and overvoltage damage when connecting untrusted USB-C accessories. IC Role / Device Role / Timing Role: High-side P-channel MOSFET configured as reverse-polarity and overvoltage protection switch. Use Value: 0.013 Ω RDS(on) limits voltage drop to <17 mV at 1.3 A, preserving bus voltage margin; fast body diode recovery avoids shoot-through during hot-plug events. |
Use Scenario: Isolates main Li-ion battery from system during fault conditions or deep sleep mode. IC Role / Device Role / Timing Role: Load switch controlled by PMIC or baseband processor GPIO to enable/disable battery path. Use Value: -1.0 V VGS(th) ensures full turn-on with 1.8 V logic; 46 nC Qg enables <1 µs switching with 50 Ω driver, minimizing transition losses. |
| Wireless Earbud Charging Case | Portable Medical Sensor Power Gating |
Use Scenario: Controls power delivery from case battery to earbuds during charging and usage cycles. IC Role / Device Role / Timing Role: Low-RDS(on) P-channel switch placed between case battery and earbud charging circuitry. Use Value: 0.017 Ω RDS(on) @ -2.5 V VGS maintains >95 % efficiency at 500 mA load, extending case runtime; PowerPAK thermal performance prevents derating at 50 °C ambient. |
Use Scenario: Powers down ECG/SpO₂ sensor subsystems between measurements to conserve battery life. IC Role / Device Role / Timing Role: Precision load switch enabling/disabling analog front-end and ADC supply rails. Use Value: <1 µA IDSS at -12 V ensures zero standby leakage; -0.4 V VGS(th) guarantees clean turn-off with 0 V GPIO, preventing phantom current draw. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel load switch applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si7401DN-T1-GE3 | Same PowerPAK 1212-8 package; -20 V VDS, 0.022 Ω RDS(on) @ -4.5 V, higher VGS(th) (-0.5 to -1.5 V) | Better suited for 3.3 V–5 V rail switching where higher VDS margin is needed; slightly higher conduction loss at 1.8 V drive | Select when system requires >12 V blocking or operates with 3.3 V control signals and higher current derating is acceptable. |
| DMN2020LFG-7 | Diodes Inc. 20 V P-channel in PowerDI 3333; 0.020 Ω RDS(on) @ -4.5 V; 3.3 mm × 3.3 mm footprint but no exposed drain pad | Higher RthJA (50 °C/W vs. 28 °C/W) limits power handling; not halogen-free per J-STD-609A Class 1 | Choose only if halogen-free compliance is not required and thermal headroom exceeds 1.5 W at 70 °C ambient. |
Compared with SI7405BDN-T1-GE3, Si7401DN-T1-GE3 trades lower RDS(on) for higher voltage rating and tighter VGS(th) distribution, while DMN2020LFG-7 sacrifices thermal performance and environmental compliance for second-source availability in non-critical industrial designs.
Availability
SI7405BDN-T1-GE3 is available at Aetrix Electronics and suitable for portable electronics, battery management systems, and USB-C accessory protection requiring stable component supply, halogen-free compliance, and high-current density in minimal PCB area.
Supply support for SI7405BDN-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.
The Si7405BDN belongs to Vishay's TrenchFET® PowerPAK family, engineered specifically for space-constrained, high-efficiency load switching in battery-powered consumer and medical devices.
FAQ
What is the maximum continuous drain current rating for SI7405BDN-T1-GE3 at 70 °C case temperature?
The SI7405BDN-T1-GE3 supports -16 A continuous drain current at TC = 70 °C, limited by package thermal capability rather than silicon. This rating assumes proper PCB copper layout per Vishay Application Note AN822, including ≥0.3 in² spreading copper on the drain pad. Derating begins above 70 °C case temperature per the published power derating curve.
Does SI7405BDN-T1-GE3 require a gate resistor for stable operation in load-switch applications?
SI7405BDN-T1-GE3 does not require a gate resistor for basic on/off switching, but a 10–100 Ω series resistor is recommended to dampen ringing caused by gate-drain capacitance (Crss = 860 pF) and PCB trace inductance. This improves EMI and prevents false turn-on during fast transients. The resistor value should be selected based on desired turn-on time (td(on) = 22–35 ns) and driver strength.
Can SI7405BDN-T1-GE3 be used in a high-side switch configuration with 1.8 V GPIO control?
Yes, SI7405BDN-T1-GE3 is fully compatible with 1.8 V GPIO control in high-side configurations. Its VGS(th) range of -0.4 V to -1.0 V ensures guaranteed turn-on at VGS = -1.8 V, delivering 0.024 Ω RDS(on) at -1.8 V drive. No level shifter or charge pump is needed, simplifying design and reducing bill-of-materials cost.
What is the thermal resistance from junction to ambient (RthJA) for SI7405BDN-T1-GE3 under standard test conditions?
Under JEDEC-standard conditions (1" × 1" FR4 board, 2 oz copper), SI7405BDN-T1-GE3 has RthJA = 28 °C/W (typ.) and 35 °C/W (max.). This value drops significantly with increased PCB copper area-e.g., to ~15 °C/W with 1 in² of 2 oz copper on inner layers. The exposed drain pad enables direct thermal coupling to the PCB, making RthJA highly layout-dependent.
Is SI7405BDN-T1-GE3 suitable for reverse polarity protection in automotive accessory circuits?
SI7405BDN-T1-GE3 is not recommended for automotive accessory circuits due to its -12 V VDS rating, which provides insufficient margin against load-dump transients (up to +40 V) and cold-crank conditions. It is qualified for commercial/industrial temperature range (-55 to +150 °C), but lacks AEC-Q101 qualification and transient voltage suppression capability required for automotive use. Use -40 V or higher rated P-channel MOSFETs instead.
SI7405BDN-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- PowerPAK® 1212-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 12 V
- Current - Continuous Drain (Id) @ 25°C:
- 16A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 13mOhm @ 13.5A, 4.5V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 115 nC @ 8 V
- Vgs (Max):
- ±8V
- Input Capacitance (Ciss) (Max) @ Vds:
- 3500 pF @ 6 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3.6W (Ta), 33W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® 1212-8
SI7405BDN-T1-GE3 FAQ
1.How can I place an order for SI7405BDN-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI7405BDN-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI7405BDN-T1-GE3 reliable?
The price and inventory of SI7405BDN-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI7405BDN-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SI7405BDN-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI7405BDN-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI7405BDN-T1-GE3?
SI7405BDN-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI7405BDN-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI7405BDN-T1-GE3?
For technical support, including SI7405BDN-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI7405BDN-T1-GE3 requirements.
6.How does Aetrix verify that SI7405BDN-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SI7405BDN-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI7405BDN-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SI7405BDN-T1-GE3?
All SI7405BDN-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI7405BDN-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI7405BDN-T1-GE3 part is unused and in its original packaging.
Return procedure for SI7405BDN-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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