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Vishay Siliconix SI7411DN-T1-GE3
- Part No.:
- SI7411DN-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® 1212-8
- Datasheet:
-
SI7411DN-T1-GE3.pdf
- Description:
- MOSFET P-CH 20V 7.5A PPAK1212-8
- Quantity:
- Payment:
- Shipping:
Inventory:9,141
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Product details
Overview
SI7411DN-T1-GE3 from Vishay Siliconix is a P-channel enhancement-mode TrenchFET® MOSFET rated for -20 V drain-source voltage, with RDS(on) = 0.019 Ω at VGS = -4.5 V and continuous drain current of -11.4 A at TA = 25 °C. It is housed in the low-profile PowerPAK® 1212-8 package and designed for high-efficiency load switching in space-constrained DC/DC and power management circuits.
For engineers reviewing the SI7411DN-T1-GE3 datasheet, SI7411DN-T1-GE3 pinout, SI7411DN-T1-GE3 application, or SI7411DN-T1-GE3 equivalent, key selection criteria include its 1.8 V gate threshold compatibility, halogen-free and lead-free construction per IEC 61249-2-21, thermal resistance (RthJC = 2.9 °C/W), and verified performance under pulsed and steady-state load conditions.
Technical Context
This MOSFET operates as a single P-channel switch with gate-driven enhancement-mode behavior, requiring negative gate-to-source bias for conduction. Its TrenchFET® structure delivers low RDS(on) across VGS = -1.8 V to -4.5 V, enabling efficient operation in low-voltage logic-controlled power rails.
The PowerPAK 1212-8 package integrates four drain terminals and three source terminals in a 3.3 mm × 3.3 mm footprint with 1.07 mm height, supporting high-current density while maintaining low junction-to-case thermal resistance (2.9 °C/W typical) and optimized solder joint reliability on FR4 PCBs.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -20 V - Maximum blocking voltage for low-side or high-side load switch configurations |
| RDS(on) @ VGS = -4.5 V | 0.019 Ω - Enables <19 mW conduction loss at 11.4 A, critical for thermally constrained designs |
| ID (continuous, TA = 25 °C) | -11.4 A - Supports robust load switching without external heatsinking in ambient-cooled layouts |
| VGS(th) | -0.4 to -1.0 V - Ensures reliable turn-on with 1.8 V logic-level gate drivers |
| RthJC | 2.9 °C/W (typ.) - Allows direct thermal path from die to PCB copper, improving power handling |
| Qg | 27–41 nC - Determines gate drive energy and switching speed in PWM applications |
| VSD @ IS = -3.0 A | -0.8 to -1.2 V - Defines forward voltage drop and power loss during body diode conduction |
Pinout & Package
Package: PowerPAK® 1212-8, surface-mount, leadless, 3.30 mm × 3.30 mm × 1.07 mm profile, with exposed drain paddle on bottom side.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| S1–S3 | Source | Three parallel source terminals reduce source inductance and improve current sharing in high-dI/dt switching |
| G | Gate | Single gate input compatible with standard CMOS/TTL logic-level drivers; low Ciss supports fast switching |
| D1–D4 | Drain | Four paralleled drain terminals maximize current capacity and minimize package resistance in high-power paths |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® technology | Delivers ultra-low RDS(on) at 1.8 V gate drive, enabling direct interface with low-voltage microcontrollers |
| PowerPAK® 1212-8 package | Provides 3× lower RthJC vs. SO-8, allowing higher power density without thermal derating penalties |
| Halogen-free & Pb-free | Complies with IEC 61249-2-21 and RoHS Directive 2011/65/EU for environmentally regulated end equipment |
| Low-profile 1.07 mm height | Enables use in ultra-thin portable electronics and stacked PCB assemblies where Z-height is constrained |
Applications
| Battery Protection Circuit | USB Port Power Switch |
|---|---|
Use Scenario: Reverse-current blocking and overcurrent shutdown in Li-ion battery packs. IC Role / Device Role / Timing Role: P-channel MOSFET used as back-to-back switch in protection IC-controlled discharge path. Use Value: Low RDS(on) minimizes voltage drop and heat generation during high-current discharge cycles. | Use Scenario: Hot-swap enable/disable of USB 2.0/3.0 downstream ports in host controllers. IC Role / Device Role / Timing Role: Load switch controlling VBUS delivery with controlled slew rate and fault reporting. Use Value: Fast turn-on/off timing (td(on) = 23 ns, tf = 70 ns) prevents inrush surges and ensures clean port enumeration. |
| DC/DC Converter Synchronous Rectifier | Industrial PLC I/O Module |
Use Scenario: Secondary-side synchronous rectification in isolated flyback or forward converters. IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diode to improve efficiency at light loads. Use Value: Body diode VSD ≤ -1.2 V and low Qg support high-frequency (>500 kHz) operation with minimal reverse recovery loss. | Use Scenario: Field-side power switching for 24 V DC digital outputs in programmable logic controllers. IC Role / Device Role / Timing Role: High-reliability load switch isolating field devices from controller logic under fault conditions. Use Value: -20 V VDS rating and -30 A pulsed current capability withstand inductive kickback from solenoid loads. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel load switch applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SI7410DN-T1-GE3 | RDS(on) = 0.022 Ω @ -4.5 V; slightly higher on-resistance and lower ID (-10.5 A) | Same package and pinout; suitable where marginally relaxed conduction loss is acceptable | Select when cost sensitivity outweighs 15% higher I2R loss at full load |
| DMG2305UVT-7 | RDS(on) = 0.045 Ω @ -4.5 V; smaller PowerDI™ 123 package (2.1 × 2.4 mm); higher RthJA (125 °C/W) | Lower current rating (-4.2 A); better suited for compact, low-power IoT nodes than industrial loads | Choose for ultra-small footprint where thermal budget allows higher RDS(on) |
Compared with SI7411DN-T1-GE3, SI7410DN-T1-GE3 offers identical form factor but trades 15% higher conduction loss for marginal cost reduction, while DMG2305UVT-7 sacrifices current capacity and thermal performance for 40% smaller board area-making SI7411DN-T1-GE3 optimal for mid-power industrial load switching where efficiency and thermal headroom are prioritized.
Availability
SI7411DN-T1-GE3 is available at Aetrix Electronics and suitable for battery management systems, USB power delivery modules, and industrial I/O controllers requiring stable component supply, halogen-free compliance, and high-reliability power switching.
Supply support for SI7411DN-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, optoelectronics, and passive components with emphasis on power efficiency and reliability.
The Si7411DN belongs to Vishay's TrenchFET® PowerPAK® family, engineered specifically for high-current, low-voltage load switching in portable, automotive, and industrial power systems where compact size and thermal performance are critical.
FAQ
What is the maximum continuous drain current rating for SI7411DN-T1-GE3 at 85 °C ambient temperature?
The SI7411DN-T1-GE3 supports -8.2 A continuous drain current at TA = 85 °C with proper PCB copper area for heat dissipation. This rating is derived from its 1.5 W maximum power dissipation at 85 °C and 0.019 Ω RDS(on), and assumes mounting on a 1" × 1" FR4 board per Vishay's thermal test condition. Derating curves in the datasheet confirm this value is valid for steady-state operation without forced airflow.
Does SI7411DN-T1-GE3 support 1.8 V logic-level gate drive?
Yes, SI7411DN-T1-GE3 is explicitly rated for 1.8 V gate drive, with RDS(on) = 0.034 Ω at VGS = -1.8 V and ID = -2.9 A. Its gate threshold voltage range of -0.4 V to -1.0 V ensures strong enhancement-mode turn-on even with marginal gate drive margins, making it compatible with 1.8 V microcontroller GPIOs without level-shifting circuitry.
What is the thermal resistance from junction to case (RthJC) for SI7411DN-T1-GE3?
The SI7411DN-T1-GE3 has a typical junction-to-case thermal resistance of 2.9 °C/W and a maximum of 3.8 °C/W under steady-state conditions. This low value is enabled by the PowerPAK® 1212-8 package's exposed drain paddle, which provides a direct thermal path to the PCB copper pour, significantly improving power handling versus traditional SO-8 packages.
Is SI7411DN-T1-GE3 halogen-free and RoHS-compliant?
Yes, SI7411DN-T1-GE3 is both halogen-free per IEC 61249-2-21 and RoHS-compliant (2011/65/EU). The "-GE3" suffix explicitly denotes lead-free and halogen-free construction, verified in Vishay's official documentation (Document Number: 72399, Rev. E). No brominated flame retardants or chlorine-based materials are used in its molding compound or terminations.
Can SI7411DN-T1-GE3 be used in synchronous rectification applications?
Yes, SI7411DN-T1-GE3 is suitable for synchronous rectification in DC/DC converters, particularly in secondary-side flyback or forward topologies. Its low RDS(on), fast switching times (tf = 70 ns), and body diode forward voltage of -0.8 to -1.2 V at -3.0 A enable high-efficiency replacement of Schottky diodes, especially at switching frequencies up to 1 MHz where its Qg = 27–41 nC remains manageable.
SI7411DN-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- PowerPAK® 1212-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 7.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 19mOhm @ 11.4A, 4.5V
- Vgs(th) (Max) @ Id:
- 1V @ 300µA
- Gate Charge (Qg) (Max) @ Vgs:
- 41 nC @ 4.5 V
- Vgs (Max):
- ±8V
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- 1.5W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® 1212-8
SI7411DN-T1-GE3 FAQ
1.How can I place an order for SI7411DN-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI7411DN-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI7411DN-T1-GE3 reliable?
The price and inventory of SI7411DN-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI7411DN-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SI7411DN-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI7411DN-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI7411DN-T1-GE3?
SI7411DN-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI7411DN-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI7411DN-T1-GE3?
For technical support, including SI7411DN-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI7411DN-T1-GE3 requirements.
6.How does Aetrix verify that SI7411DN-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SI7411DN-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI7411DN-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SI7411DN-T1-GE3?
All SI7411DN-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI7411DN-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI7411DN-T1-GE3 part is unused and in its original packaging.
Return procedure for SI7411DN-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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