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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI7414DN-T1-GE3

Name: SI7414DN-T1-GE3
Brand: Vishay Siliconix
SKU: SI7414DN-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI7414DN-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® 1212-8

Datasheet:: SI7414DN-T1-GE3.pdf

Description:: MOSFET N-CH 60V 5.6A PPAK1212-8

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Product details

Overview

SI7414DN-T1-GE3 from Vishay Siliconix is an N-channel 60-V TrenchFET® Power MOSFET in PowerPAK 1212-8 package, with R_DS(on) = 0.025 Ω at V_GS = 10 V and 8.7 A continuous drain current (T_J = 150 °C), optimized for PWM switching in primary-side DC-DC converters.

For engineers reviewing the SI7414DN-T1-GE3 datasheet, SI7414DN-T1-GE3 pinout, SI7414DN-T1-GE3 application, or SI7414DN-T1-GE3 equivalent, key selection criteria include its halogen-free Pb-free construction, low 2.4 °C/W junction-to-case thermal resistance, and gate charge profile (Q_g = 16–25 nC) enabling high-frequency synchronous rectification and motor drive control.

Technical Context

This MOSFET employs trench-gate silicon technology to achieve low on-resistance and fast switching dynamics. Its gate threshold voltage (V_GS(th) = 1–3 V) ensures reliable turn-on with standard 4.5 V logic-level drivers, while the integrated body diode supports bidirectional current flow in half-bridge configurations.

The PowerPAK 1212-8 package features an exposed drain pad on the bottom surface, delivering ultra-low thermal impedance (R_thJC = 1.9–2.4 °C/W) and enabling efficient heat transfer directly to the PCB ground plane-critical for space-constrained power stages operating at >500 kHz.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - Supports input rails up to 48 V nominal systems with 20 % transient margin.
R_DS(on) @ 10 V	0.025 Ω - Delivers ≤2.1 W conduction loss at 9 A, reducing thermal load in compact converters.
I_D (continuous)	8.7 A @ T_J = 150 °C - Sustains full rated current in thermally constrained layouts with minimal heatsinking.
Q_g	16–25 nC - Enables efficient 1–2 MHz PWM operation with moderate gate driver strength (e.g., TC4427).
R_thJC	1.9–2.4 °C/W - Allows direct thermal coupling to PCB copper, limiting junction rise to <5 °C above board temperature at 2 W dissipation.
V_GS(th)	1–3 V - Ensures robust turn-on with 3.3 V or 5 V microcontroller GPIO without level-shifting.
Package	PowerPAK 1212-8 - 3.3 mm × 3.3 mm footprint, 1.05 mm height, leadless with exposed drain pad.

Pinout & Package

PowerPAK 1212-8 is a leadless surface-mount package with an exposed drain pad on the bottom face. The top-side terminals are arranged in an 8-pin configuration (4 drain, 1 gate, 3 source) optimized for low-inductance, high-current routing.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4 (D)	Drain	Four parallel drain terminals tied to internal die drain metallization and bottom-side exposed pad - must be connected to large copper pour for thermal and current handling.
5 (G)	Gate	Single gate input terminal - requires low-impedance trace to minimize ringing; gate resistor selection affects dV/dt and EMI.
6, 7, 8 (S)	Source	Three parallel source terminals - connect to local power ground plane to reduce source inductance and improve switching stability.

Key Features

Feature	Design Value
TrenchFET® architecture	Enables 0.025 Ω R_DS(on) in 3.3 mm × 3.3 mm footprint - reduces conduction loss by >35 % vs. comparable SO-8 MOSFETs.
PWM-optimized gate charge	Q_gd/Q_gs ratio of ~1.6 - balances switching speed and voltage overshoot during hard-switching transitions.
Halogen-free & Pb-free	Complies with IEC 61249-2-21 and RoHS - suitable for consumer, industrial, and automotive applications requiring green compliance.
Low R_thJC	1.9 °C/W typical - enables >2× higher power density than TSSOP-8 equivalents without external heatsinks.
Body diode reverse recovery	t_rr = 45–90 ns - supports synchronous rectification in buck/forward topologies with minimal shoot-through risk.

Applications

Primary Side Switch	Synchronous Rectifier
Use Scenario: High-efficiency isolated DC-DC converter (e.g., 48 V input → 12 V output) using flyback or forward topology. IC Role / Device Role / Timing Role: Primary-side power switch controlling energy transfer via transformer; driven by PWM controller (e.g., UC384x) at 100–500 kHz. Use Value: Low R_DS(on) and Q_g minimize switching and conduction losses, achieving >92 % efficiency at full load without forced air cooling.	Use Scenario: Secondary-side rectification in 12 V/24 V telecom or server power supplies. IC Role / Device Role / Timing Role: Synchronous rectifier replacing Schottky diode; driven by gate driver synchronized to primary switch timing. Use Value: 0.75–1.2 V V_SD and fast t_rr reduce forward drop and reverse recovery loss, improving efficiency by 3–5 % over 40 V Schottky alternatives.
Motor Drive Half-Bridge	Industrial DC Power Switch
Use Scenario: 24 V BLDC motor control in HVAC blowers or power tools with 3-phase inverter stage. IC Role / Device Role / Timing Role: Low-side switch in half-bridge leg; commutated at 10–20 kHz with dead-time control. Use Value: Robust 30 A pulsed drain rating and low gate charge enable crisp edge transitions, minimizing shoot-through and torque ripple.	Use Scenario: Remote ON/OFF control of 24–48 V industrial loads (e.g., solenoids, PLC outputs) with overcurrent protection. IC Role / Device Role / Timing Role: High-side or low-side load switch; controlled by microcontroller GPIO with optional current-sense feedback. Use Value: 60 V V_DS rating provides margin against inductive kickback; 150 °C T_J(max) ensures reliability in sealed enclosures.

Primary Side Switch

Synchronous Rectifier

Use Scenario: High-efficiency isolated DC-DC converter (e.g., 48 V input → 12 V output) using flyback or forward topology.

IC Role / Device Role / Timing Role: Primary-side power switch controlling energy transfer via transformer; driven by PWM controller (e.g., UC384x) at 100–500 kHz.

Use Value: Low R_DS(on) and Q_g minimize switching and conduction losses, achieving >92 % efficiency at full load without forced air cooling.

Use Scenario: Secondary-side rectification in 12 V/24 V telecom or server power supplies.

IC Role / Device Role / Timing Role: Synchronous rectifier replacing Schottky diode; driven by gate driver synchronized to primary switch timing.

Use Value: 0.75–1.2 V V_SD and fast t_rr reduce forward drop and reverse recovery loss, improving efficiency by 3–5 % over 40 V Schottky alternatives.

Motor Drive Half-Bridge

Industrial DC Power Switch

Use Scenario: 24 V BLDC motor control in HVAC blowers or power tools with 3-phase inverter stage.

IC Role / Device Role / Timing Role: Low-side switch in half-bridge leg; commutated at 10–20 kHz with dead-time control.

Use Value: Robust 30 A pulsed drain rating and low gate charge enable crisp edge transitions, minimizing shoot-through and torque ripple.

Use Scenario: Remote ON/OFF control of 24–48 V industrial loads (e.g., solenoids, PLC outputs) with overcurrent protection.

IC Role / Device Role / Timing Role: High-side or low-side load switch; controlled by microcontroller GPIO with optional current-sense feedback.

Use Value: 60 V V_DS rating provides margin against inductive kickback; 150 °C T_J(max) ensures reliability in sealed enclosures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 60-V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si7413DN-T1-GE3	Same PowerPAK 1212-8 package, but 0.032 Ω R_DS(on) @ 10 V and 7.5 A I_D - higher conduction loss, lower cost.	Suitable for lower-power (<15 W) flyback or linear regulators where thermal headroom exists.	Select when budget constraints outweigh efficiency targets and peak current stays below 7 A.
IRF7470PbF	SO-8 package, 0.022 Ω R_DS(on), 10.5 A I_D, but R_thJA = 62 °C/W - larger footprint, worse thermal performance.	Better for legacy SO-8 designs needing minor BOM updates; not recommended for new compact layouts.	Choose only if board rework is prohibitive and thermal derating to 5 A is acceptable.

Compared with SI7414DN-T1-GE3, Si7413DN-T1-GE3 trades 28 % higher R_DS(on) for cost reduction, while IRF7470PbF offers marginally lower on-resistance but sacrifices 26× higher junction-to-ambient thermal resistance - making SI7414DN-T1-GE3 optimal for thermally dense, high-frequency power stages.

Availability

SI7414DN-T1-GE3 is available at Aetrix Electronics and suitable for primary-side switching, synchronous rectification, motor drives, industrial DC power switching, and high-density DC-DC conversion requiring stable component supply and halogen-free compliance.

Supply support for SI7414DN-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.

The Si74xxDN family targets high-frequency, space-constrained power conversion-designed specifically for PWM-optimized switching in DC-DC converters, motor controllers, and industrial power supplies where thermal density and green compliance are critical.

FAQ

What is the maximum continuous drain current rating for SI7414DN-T1-GE3 at 70 °C ambient?

The SI7414DN-T1-GE3 supports 7.0 A continuous drain current at T_A = 70 °C with proper PCB copper area (1" × 1" FR4). This rating assumes steady-state thermal equilibrium and accounts for reduced power dissipation due to ambient temperature rise - verified per Absolute Maximum Ratings table in Vishay document 71738.

Does SI7414DN-T1-GE3 require a heatsink in typical applications?

No, SI7414DN-T1-GE3 does not require an external heatsink when mounted on ≥0.3 in² of 2-oz copper on the drain pad. Its PowerPAK 1212-8 package achieves R_thJA = 26–33 °C/W (10 s) and 65–81 °C/W (steady state), enabling full 8.7 A operation at T_A = 25 °C with only PCB copper as the thermal path - confirmed in Vishay AN822.

Is SI7414DN-T1-GE3 suitable for 3.3 V logic-level gate drive?

Yes, SI7414DN-T1-GE3 has a gate threshold voltage range of 1–3 V and delivers R_DS(on) = 0.036 Ω at V_GS = 4.5 V, making it fully compatible with 3.3 V microcontrollers driving through a 10 Ω series resistor. Gate charge (Q_g = 16–25 nC) remains manageable without active level-shifting.

What is the avalanche energy rating of SI7414DN-T1-GE3?

The SI7414DN-T1-GE3 is rated for 18 mJ single-pulse avalanche energy (E_AS) with L = 0.1 mH, tested per JEDEC JESD24-1. This capability supports robustness against inductive switching transients in motor drive and relay-driving applications - specified in Absolute Maximum Ratings section of document 71738.

How does the PowerPAK 1212-8 package of SI7414DN-T1-GE3 compare thermally to SO-8?

The PowerPAK 1212-8 package of SI7414DN-T1-GE3 delivers R_thJC = 1.9–2.4 °C/W - over 10× better than typical SO-8 (20 °C/W) and 20× better than TSSOP-8 (52 °C/W). This allows SI7414DN-T1-GE3 to maintain junction temperatures within 5 °C of PCB temperature at 2 W dissipation, versus >40 °C rise for SO-8 equivalents - data validated in Vishay AN822.

SI7414DN-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: PowerPAK® 1212-8

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 5.6A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 25mOhm @ 8.7A, 10V

Vgs(th) (Max) @ Id:: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 25 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: 1.5W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® 1212-8

SI7414DN-T1-GE3 FAQ

1.How can I place an order for SI7414DN-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI7414DN-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI7414DN-T1-GE3 reliable?

The price and inventory of SI7414DN-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI7414DN-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SI7414DN-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI7414DN-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI7414DN-T1-GE3?

SI7414DN-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI7414DN-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI7414DN-T1-GE3?

For technical support, including SI7414DN-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI7414DN-T1-GE3 requirements.

6.How does Aetrix verify that SI7414DN-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SI7414DN-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI7414DN-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SI7414DN-T1-GE3?

All SI7414DN-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI7414DN-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI7414DN-T1-GE3 part is unused and in its original packaging.

Return procedure for SI7414DN-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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