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Vishay Siliconix SI7421DN-T1-GE3
- Part No.:
- SI7421DN-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® 1212-8
- Datasheet:
-
SI7421DN-T1-GE3.pdf
- Description:
- MOSFET P-CH 30V 6.4A PPAK 1212-8
- Quantity:
- Payment:
- Shipping:
Inventory:1,493
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Product details
Overview
SI7421DN-T1-GE3 from Vishay Siliconix is a P-channel enhancement-mode MOSFET designed for high-efficiency load switching in battery-powered systems, featuring -30 V VDS, 0.025 Ω RDS(on) at VGS = -10 V, and -9.8 A continuous drain current at TA = 25 °C. It operates as a low-side or high-side power switch in portable electronics battery protection circuits.
For engineers reviewing the SI7421DN-T1-GE3 datasheet, SI7421DN-T1-GE3 pinout, SI7421DN-T1-GE3 application, or SI7421DN-T1-GE3 equivalent, key selection criteria include its PowerPAK® 1212-8 package thermal performance (RthJC = 2.9 °C/W), halogen-free compliance per IEC 61249-2-21, and verified -4.5 V gate drive capability delivering 0.043 Ω RDS(on).
Technical Context
This device uses TrenchFET® technology to achieve low on-resistance and fast switching with Qg = 26.2 nC (typ.) and tf = 42 ns (typ.). Its gate threshold voltage range of -1 V to -3 V ensures reliable turn-on with standard logic-level negative gate drive.
The integrated body diode exhibits VSD = -0.8 V (typ.) at IS = -3.0 A and supports synchronous rectification in buck converters. Thermal design leverages the exposed-drain PowerPAK 1212-8 footprint (3.30 mm × 3.30 mm) with direct board conduction path and 1.07 mm profile.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -30 V - Maximum blocking voltage for battery disconnect and reverse-polarity protection |
| RDS(on) | 0.025 Ω @ VGS = -10 V - Enables <100 mW conduction loss at 9.8 A, critical for thermal management |
| ID (cont) | -9.8 A @ TA = 25 °C - Supports high-current battery switching without forced cooling |
| Qg | 26.2 nC (typ.) - Low gate charge enables efficient PWM control up to 1 MHz |
| RthJC | 2.9 °C/W (typ.) - Direct die-to-PCB thermal path reduces junction temperature rise by >40 °C vs. TSSOP-8 |
| VGS(th) | -1 to -3 V - Ensures full enhancement with common -4.5 V or -5 V gate drivers |
| VSD | -0.8 V (typ.) @ IS = -3.0 A - Low forward drop minimizes power loss during body-diode conduction |
Pinout & Package
SI7421DN-T1-GE3 is housed in the leadless PowerPAK® 1212-8 package (3.30 mm × 3.30 mm × 1.07 mm), featuring an exposed drain pad on the bottom side for optimal thermal transfer to the PCB. The top-side terminals are arranged in an 8-pin configuration with source, gate, and drain connections distributed across the perimeter.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 | Source (S) | Four parallel source terminals reduce source inductance and improve current sharing in high-frequency switching |
| 5 | Gate (G) | Single gate input with 6.5 Ω gate resistance - limits dV/dt-induced shoot-through in bridge configurations |
| 6, 7, 8, Bottom Pad | Drain (D) | Eight-terminal drain connection including large bottom-exposed copper pad - provides ultra-low RthJC and high-current capacity |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® process technology | Delivers industry-leading RDS(on) × area efficiency for compact battery-switch designs |
| PowerPAK® 1212-8 package | Reduces PCB footprint by >40 % vs. TSSOP-8 while improving thermal resistance 20× over same-size alternatives |
| Halogen-free construction | Meets IEC 61249-2-21 requirements without compromising moisture sensitivity or solderability |
| Low 1.07 mm profile | Enables use in ultra-thin portable devices where height clearance is constrained to <1.2 mm |
| Enhanced gate oxide reliability | Guaranteed ±20 V VGS rating supports robust operation under transient gate-drive conditions |
Applications
| Battery Protection Circuit | USB-C Power Delivery Switch |
|---|---|
Use Scenario: Reverse-current blocking and over-discharge cutoff in single-cell Li-ion battery packs for wearables and medical monitors. IC Role / Device Role / Timing Role: High-side P-channel MOSFET switch controlled by battery management IC to isolate cell during fault conditions. Use Value: 0.025 Ω RDS(on) limits voltage drop to <250 mV at 10 A, preserving usable battery capacity and enabling accurate voltage monitoring. | Use Scenario: VBUS path switching in USB-C receptacles supporting 3 A/20 V PD profiles with automatic dead-time control. IC Role / Device Role / Timing Role: Load switch implementing hot-swap and inrush current limiting via external gate driver timing. Use Value: Fast 42 ns fall time and 26.2 nC Qg allow clean 100 kHz–1 MHz switching with minimal EMI in space-constrained USB-C modules. |
| Smartphone Power Management | Industrial IoT Sensor Node |
Use Scenario: System power rail isolation between application processor and peripheral subsystems during deep-sleep mode. IC Role / Device Role / Timing Role: Low-quiescent-current P-channel switch enabling <1 µA off-state leakage (IDSS ≤ 1 µA). Use Value: -1 µA IDSS at VDS = -30 V and -5 µA at 85 °C ensures multi-week battery runtime in always-on sensor wake-up applications. | Use Scenario: Remote battery-powered environmental sensor node requiring field-replaceable power path with extended temperature operation. IC Role / Device Role / Timing Role: Main battery disconnect switch rated for -55 °C to +150 °C junction temperature range. Use Value: Stable RDS(on) performance across -55 °C to +125 °C ambient enables reliable operation in unheated outdoor enclosures. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel MOSFET switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SI7420DN-T1-GE3 | Same PowerPAK 1212-8 package but N-channel; requires high-side driver or level-shifting circuitry | Used where lower RDS(on) is prioritized and gate drive complexity is acceptable | Select only if system already implements bootstrap or charge-pump gate drive for N-channel topology |
| DMN3020LSD-13 | 30 V P-channel in SO-8; RDS(on) = 0.028 Ω @ -10 V; RthJA = 65 °C/W (vs. 28 °C/W for SI7421DN-T1-GE3) | Suitable for cost-sensitive industrial controls where PCB area and thermal headroom are less constrained | Choose when legacy SO-8 layout compatibility is required and thermal derating can accommodate higher RthJA |
Compared with SI7421DN-T1-GE3, SI7420DN-T1-GE3 demands additional gate-drive circuitry but offers marginally lower RDS(on), while DMN3020LSD-13 trades 2.3× higher junction-to-ambient thermal resistance for broader distributor availability and SO-8 rework familiarity.
Availability
SI7421DN-T1-GE3 is available at Aetrix Electronics and suitable for battery protection, USB-C power delivery, and portable medical device applications requiring stable component supply, halogen-free compliance, and high thermal efficiency in space-constrained layouts.
Supply support for SI7421DN-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.
The Si7421DN product line belongs to Vishay's TrenchFET® PowerPAK® family, engineered specifically for high-current, low-voltage battery-switching applications demanding minimal PCB area and superior thermal performance.
FAQ
What is the maximum continuous drain current rating for SI7421DN-T1-GE3 at 85 °C ambient temperature?
The SI7421DN-T1-GE3 supports -7.0 A continuous drain current at TA = 85 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the PowerPAK 1212-8 package under natural convection; actual current capability increases with PCB copper area and airflow. The SI7421DN-T1-GE3 datasheet confirms this value under "Continuous Drain Current (TJ = 150 °C)" with footnote (a) referencing surface-mounted 1" × 1" FR4 board conditions.
Does SI7421DN-T1-GE3 support logic-level gate drive at -4.5 V?
Yes, SI7421DN-T1-GE3 is fully characterized for -4.5 V gate drive, delivering 0.043 Ω RDS(on) at ID = -7.4 A. Its VGS(th) range of -1 V to -3 V ensures strong enhancement at -4.5 V, eliminating need for gate-driver ICs in most portable applications. The SI7421DN-T1-GE3 product summary explicitly lists this parameter alongside the -10 V condition.
What is the thermal resistance from junction to case (RthJC) for SI7421DN-T1-GE3, and how is it measured?
The SI7421DN-T1-GE3 has a typical RthJC of 2.9 °C/W and maximum of 3.8 °C/W, measured from junction to the exposed drain pad (case) under steady-state conditions with the device mounted on an infinite heat sink. This value is documented in the Thermal Resistance Ratings table of the official Vishay datasheet (Document Number: 72416). The low RthJC results directly from the PowerPAK 1212-8's exposed-copper drain construction.
Can SI7421DN-T1-GE3 be used in synchronous rectification topologies?
Yes, SI7421DN-T1-GE3 supports synchronous rectification via its body diode, which exhibits VSD = -0.8 V (typ.) at IS = -3.0 A and reverse recovery time trr = 30 ns (typ.). These parameters enable efficient operation in buck converter low-side switches where the MOSFET replaces a Schottky diode. The SI7421DN-T1-GE3 datasheet specifies both values in the "Diode Forward Voltage" and "Dynamic" sections.
Is SI7421DN-T1-GE3 compatible with lead-free reflow soldering processes?
Yes, SI7421DN-T1-GE3 is qualified for lead-free reflow per JEDEC J-STD-020, with peak temperature of 240 °C for 20–40 seconds. The "Ordering Information" section explicitly identifies SI7421DN-T1-GE3 as "Lead (Pb)-free and Halogen-free", and Vishay's solder profile document (www.vishay.com/doc?73257) validates this thermal cycle. No special pre-bake or handling is required beyond standard MSL-1 precautions.
SI7421DN-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- PowerPAK® 1212-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 6.4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 25mOhm @ 9.8A, 10V
- Vgs(th) (Max) @ Id:
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 40 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- 1.5W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® 1212-8
SI7421DN-T1-GE3 FAQ
1.How can I place an order for SI7421DN-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI7421DN-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI7421DN-T1-GE3 reliable?
The price and inventory of SI7421DN-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI7421DN-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SI7421DN-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI7421DN-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI7421DN-T1-GE3?
SI7421DN-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI7421DN-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI7421DN-T1-GE3?
For technical support, including SI7421DN-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI7421DN-T1-GE3 requirements.
6.How does Aetrix verify that SI7421DN-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SI7421DN-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI7421DN-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SI7421DN-T1-GE3?
All SI7421DN-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI7421DN-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI7421DN-T1-GE3 part is unused and in its original packaging.
Return procedure for SI7421DN-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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