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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI7434DP-T1-GE3

Name: SI7434DP-T1-GE3
Brand: Vishay Siliconix
SKU: SI7434DP-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI7434DP-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® SO-8

Datasheet:: SI7434DP-T1-GE3.pdf

Description:: MOSFET N-CH 250V 2.3A PPAK SO-8

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Product details

Overview

SI7434DP-T1-GE3 from Vishay Siliconix is an N-channel 250 V (D-S) TrenchFET® power MOSFET optimized for PWM switching in primary-side high-voltage DC-DC conversion. It delivers R_DS(on) = 0.129 Ω (typ.) at V_GS = 10 V, 3.8 A continuous drain current, and 34 nC total gate charge - enabling efficient operation in telecom power supplies and miniature power modules.

For engineers reviewing the SI7434DP-T1-GE3 datasheet, SI7434DP-T1-GE3 pinout, SI7434DP-T1-GE3 application, or SI7434DP-T1-GE3 equivalent, key selection criteria include its 250 V V_DS, PowerPAK® SO-8 leadless package thermal performance, avalanche-rated ruggedness, and PWM-optimized gate charge profile for hard-switched topologies.

Technical Context

This MOSFET employs Vishay's trench-gate process to achieve low R_DS(on) with controlled Q_g/Q_gd ratio (34 nC / 10.5 nC), supporting fast turn-on and reduced switching losses in fixed-frequency flyback and forward converters. Its 1.5 °C/W junction-to-case thermal resistance enables direct heat transfer via the exposed drain pad.

The device is fully characterized for repetitive avalanche energy (E_AS = 8.4 mJ) and operates across –55 °C to +150 °C junction temperature. Gate threshold voltage (V_GS(th) = 2–4 V) ensures reliable enhancement-mode turn-on with standard 10 V gate drivers while maintaining low leakage (I_DSS ≤ 1 μA at 250 V).

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	250 V - Supports primary-side switching in 48 V input telecom systems with ≥2× safety margin against transients.
R_DS(on) max @ 10 V	0.155 Ω - Limits conduction loss to ≤2.2 W at 3.8 A, critical for thermally constrained power modules.
Q_g typ.	34 nC - Enables <25 ns turn-on delay with 6 Ω gate resistor, suitable for 300–500 kHz PWM operation.
I_D continuous	3.8 A @ T_J = 150 °C - Sustains full load in compact FR4 layouts with 1" × 1" copper area per Vishay test conditions.
R_thJC max	1.8 °C/W - Allows direct thermal coupling to PCB copper; 2.7 W dissipation raises die only ~5 °C above board temp.
E_AS	8.4 mJ - Withstands single-pulse inductive kickback up to 13 A without failure, enhancing system reliability.
V_GS(th)	2–4 V - Ensures unambiguous turn-on with 5 V logic-level drivers while avoiding spurious conduction near 0 V.

Pinout & Package

SI7434DP-T1-GE3 uses the PowerPAK® SO-8 single-channel leadless package (5.15 mm × 6.15 mm footprint), with exposed drain pad on bottom for thermal conduction and identical pinout to standard SO-8 - enabling drop-in replacement on legacy layouts.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4	Source (S)	Four parallel source terminals reduce source inductance and improve current sharing in high-di/dt switching.
5, 6, 7, 8	Drain (D)	Exposed copper drain pad occupies entire bottom surface; requires full-solder coverage for optimal thermal path.
Gate (G)	Control input	Single terminal (Pin 1 top view) with 0.6–1.8 Ω gate resistance; designed for direct drive from PWM controllers.

Key Features

Feature	Design Value
PWM-optimized TrenchFET®	Q_gd/Q_g = 31 % - Minimizes Miller plateau duration, reducing overlap loss in hard-switched topologies.
100 % R_g tested	Gate resistance 0.6–1.8 Ω - Ensures consistent switching speed and eliminates need for external gate resistors in many designs.
Avalanche rated	E_AS = 8.4 mJ - Guarantees robustness against inductive energy during overcurrent or startup faults.
PowerPAK® SO-8 package	R_thJC = 1.5 °C/W - Delivers DPAK-level thermal performance in SO-8 footprint, enabling higher power density.
Lead (Pb)-free & halogen-free	Complies with RoHS 2011/65/EU and JEDEC J-STD-020 reflow profile - supports automated assembly without exemptions.

Applications

Telecom AC-DC Front-End	Distributed Power Architecture (DPA)
Use Scenario: Primary-side switch in 48 V input offline flyback converter delivering 12 V/5 A to remote radio units. IC Role / Device Role / Timing Role: High-voltage N-channel switching element operating at 250 kHz with 50 % duty cycle. Use Value: 0.129 Ω R_DS(on) limits conduction loss to 1.85 W, while 34 nC Q_g enables clean 20 ns rise time under 6 Ω gate drive.	Use Scenario: Isolated DC-DC module converting 24 V bus to 3.3 V for FPGA core supply in base station backplane. IC Role / Device Role / Timing Role: Primary-side synchronous rectifier driver in forward topology with active clamp. Use Value: Avalanche rating (8.4 mJ) absorbs clamp capacitor discharge energy, eliminating need for snubber networks.
Miniature Power Module	Industrial Programmable Logic Controller (PLC) Power Supply
Use Scenario: Compact 10 W isolated module for IoT sensor node powering, mounted on 1" × 1" FR4 with minimal copper. IC Role / Device Role / Timing Role: Main switching transistor in self-oscillating flyback with integrated controller. Use Value: PowerPAK® SO-8's 1.5 °C/W R_thJC keeps junction temp ≤115 °C at full load - 35 °C cooler than standard SO-8 equivalent.	Use Scenario: Auxiliary 5 V/2 A supply in DIN-rail mounted PLC, subjected to 85 °C ambient and 10 g vibration. IC Role / Device Role / Timing Role: Primary-side switch in regulated forward converter with overvoltage protection. Use Value: V_GS(th) = 2–4 V ensures stable turn-on despite gate drive droop across long PCB traces; 100 % R_g test guarantees timing consistency.

Telecom AC-DC Front-End

Distributed Power Architecture (DPA)

Use Scenario: Primary-side switch in 48 V input offline flyback converter delivering 12 V/5 A to remote radio units.

IC Role / Device Role / Timing Role: High-voltage N-channel switching element operating at 250 kHz with 50 % duty cycle.

Use Value: 0.129 Ω R_DS(on) limits conduction loss to 1.85 W, while 34 nC Q_g enables clean 20 ns rise time under 6 Ω gate drive.

Use Scenario: Isolated DC-DC module converting 24 V bus to 3.3 V for FPGA core supply in base station backplane.

IC Role / Device Role / Timing Role: Primary-side synchronous rectifier driver in forward topology with active clamp.

Use Value: Avalanche rating (8.4 mJ) absorbs clamp capacitor discharge energy, eliminating need for snubber networks.

Miniature Power Module

Industrial Programmable Logic Controller (PLC) Power Supply

Use Scenario: Compact 10 W isolated module for IoT sensor node powering, mounted on 1" × 1" FR4 with minimal copper.

IC Role / Device Role / Timing Role: Main switching transistor in self-oscillating flyback with integrated controller.

Use Value: PowerPAK® SO-8's 1.5 °C/W R_thJC keeps junction temp ≤115 °C at full load - 35 °C cooler than standard SO-8 equivalent.

Use Scenario: Auxiliary 5 V/2 A supply in DIN-rail mounted PLC, subjected to 85 °C ambient and 10 g vibration.

IC Role / Device Role / Timing Role: Primary-side switch in regulated forward converter with overvoltage protection.

Use Value: V_GS(th) = 2–4 V ensures stable turn-on despite gate drive droop across long PCB traces; 100 % R_g test guarantees timing consistency.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel high-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si7436DP-T1-GE3	Same PowerPAK® SO-8 package, but 300 V V_DS and 0.22 Ω R_DS(on) @ 10 V.	Better for 300 V bus systems; higher R_DS(on) increases conduction loss by ~40 % at 3.8 A.	Select when system transient voltage exceeds 250 V; avoid if efficiency at 48 V input is critical.
IRF640NPBF	TO-220 package, 200 V V_DS, 0.18 Ω R_DS(on), no avalanche rating, 67 nC Q_g.	Requires heatsink; unsuitable for surface-mount miniaturized designs; slower switching due to higher Q_g.	Only consider for through-hole prototyping or legacy repair; not a drop-in replacement for SI7434DP-T1-GE3.

Compared with Si7436DP-T1-GE3, SI7434DP-T1-GE3 offers lower conduction loss and tighter V_GS(th) tolerance for 250 V systems, while IRF640NPBF lacks the thermal efficiency and ruggedness needed for modern compact power modules.

Availability

SI7434DP-T1-GE3 is available at Aetrix Electronics and suitable for telecom power supplies, distributed power architectures, and miniature power modules requiring stable component supply, RoHS-compliant packaging, and proven avalanche ruggedness.

Supply support for SI7434DP-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.

The SI7434DP-T1-GE3 belongs to Vishay's TrenchFET® PowerPAK® SO-8 family, engineered specifically for high-density, high-efficiency primary-side switching in telecom and industrial power conversion where thermal management and avalanche robustness are critical.

FAQ

What is the maximum continuous drain current for SI7434DP-T1-GE3 at 70 °C ambient?

The SI7434DP-T1-GE3 supports 1.8 A continuous drain current at T_A = 70 °C under steady-state conditions, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the PowerPAK® SO-8 package on standard FR4; using enhanced copper spreading can increase this value by up to 65 %.

Does SI7434DP-T1-GE3 require a heatsink in typical applications?

No, SI7434DP-T1-GE3 does not require an external heatsink when mounted on a 1" × 1" FR4 board with adequate copper area, thanks to its 1.5 °C/W R_thJC and exposed drain pad. Vishay's characterization shows junction temperature remains ≤115 °C at 3.8 A and 25 °C ambient - well within the 150 °C limit.

Is SI7434DP-T1-GE3 suitable for use with 5 V gate drive?

Yes, SI7434DP-T1-GE3 has a gate threshold voltage range of 2–4 V and delivers R_DS(on) = 0.162 Ω at V_GS = 6 V, making it compatible with 5 V logic-level gate drivers. However, full 10 V drive reduces R_DS(on) by 5.5 % and improves switching speed - recommended for highest efficiency.

How does the PowerPAK® SO-8 package of SI7434DP-T1-GE3 compare thermally to standard SO-8?

The PowerPAK® SO-8 package of SI7434DP-T1-GE3 achieves R_thJC = 1.5 °C/W versus >16 °C/W for standard SO-8, resulting in ~40 °C lower junction temperature at identical power dissipation. This is enabled by the exposed copper drain pad and elimination of leadframe thermal bottlenecks.

Can SI7434DP-T1-GE3 replace a standard SO-8 MOSFET on existing PCBs?

Yes, SI7434DP-T1-GE3 uses the same 5.15 mm × 6.15 mm footprint and pinout as standard SO-8, allowing direct replacement without layout changes. The only design consideration is ensuring full solder coverage on the bottom-side drain pad to realize its thermal advantage.

SI7434DP-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: PowerPAK® SO-8

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 250 V

Current - Continuous Drain (Id) @ 25°C:: 2.3A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 6V, 10V

Rds On (Max) @ Id, Vgs:: 155mOhm @ 3.8A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 50 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: 1.9W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® SO-8

SI7434DP-T1-GE3 FAQ

1.How can I place an order for SI7434DP-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI7434DP-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI7434DP-T1-GE3 reliable?

The price and inventory of SI7434DP-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI7434DP-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SI7434DP-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI7434DP-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI7434DP-T1-GE3?

SI7434DP-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI7434DP-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI7434DP-T1-GE3?

For technical support, including SI7434DP-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI7434DP-T1-GE3 requirements.

6.How does Aetrix verify that SI7434DP-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SI7434DP-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI7434DP-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SI7434DP-T1-GE3?

All SI7434DP-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI7434DP-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI7434DP-T1-GE3 part is unused and in its original packaging.

Return procedure for SI7434DP-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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