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Vishay Siliconix SI7454CDP-T1-GE3
- Part No.:
- SI7454CDP-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SI7454CDP-T1-GE3.pdf
- Description:
- MOSFET N-CH 100V 22A PPAK SO-8
- Quantity:
- Payment:
- Shipping:
Inventory:8,712
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Product details
Overview
SI7454CDP-T1-GE3 from Vishay Siliconix is an N-channel 100 V (D-S) TrenchFET® Power MOSFET in PowerPAK® SO-8 package, with RDS(on) = 0.0305 Ω at VGS = 10 V, 22 A continuous drain current at TC = 25 °C, and 9.5 nC total gate charge - designed for high-efficiency DC/DC primary-side switching in telecom/server 48 V power supplies.
For engineers reviewing the SI7454CDP-T1-GE3 datasheet, SI7454CDP-T1-GE3 pinout, SI7454CDP-T1-GE3 application, or SI7454CDP-T1-GE3 equivalent, key selection criteria include its 100 V VDS, low RDS(on) at 4.5 V–10 V drive, 100 % UIS and Rg tested qualification, and PowerPAK® SO-8 thermal performance (RthJC = 3.3 °C/W).
Technical Context
This MOSFET employs Vishay's TrenchFET® process to achieve low on-resistance and fast switching with controlled Qg (9.5–19.5 nC) and low Ciss (580 pF), enabling efficient operation in hard-switched and resonant topologies. Its 100 % UIS-tested ruggedness supports reliable primary-side switching under transient overloads.
The device features a body diode with trr = 31–62 ns and Qrr = 28–56 nC, optimized for synchronous rectification and half/full-bridge configurations where reverse recovery behavior impacts efficiency and EMI. Gate threshold voltage (1.2–2.8 V) ensures stable enhancement-mode operation across temperature.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 100 V - supports primary-side switching in 48 V input DC/DC converters with sufficient margin against voltage spikes. |
| RDS(on) | 0.0305 Ω @ VGS = 10 V - enables <2.5 W conduction loss at 9 A, critical for high-current telecom power stages. |
| ID (continuous) | 22 A @ TC = 25 °C - delivers high current density in compact PowerPAK® SO-8 footprint without external heatsink. |
| Qg | 9.5 nC @ VGS = 4.5 V - reduces gate drive power and enables efficient operation with standard PWM controllers. |
| tr/tf | 12–24 ns / 10–20 ns - supports >500 kHz switching frequencies while limiting switching losses and EMI generation. |
| RthJC | 3.3 °C/W (typ.) - allows direct thermal coupling to PCB copper or heatsink, essential for industrial ambient temperature derating. |
| VGS(th) | 1.2–2.8 V - ensures robust turn-on with 3.3 V or 5 V logic-level gate drivers, avoiding partial enhancement in noisy environments. |
Pinout & Package
SI7454CDP-T1-GE3 is housed in a leadless PowerPAK® SO-8 package (6.15 mm × 5.15 mm), with exposed drain pads on the bottom for enhanced thermal conduction. The package is RoHS-compliant, halogen-free, and rated for peak soldering temperature of 260 °C.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 | Source (S) | Common source connection for internal parallel die; low-inductance return path for high di/dt switching. |
| 5, 6, 7, 8 | Drain (D) | Exposed copper drain pad (bottom side); primary thermal and current path to PCB ground plane or heatsink. |
| G (Pin 3 of standard SO-8 outline, but not present as discrete pin) | Gate (G) | Single gate terminal located at Pin 1 position; requires controlled trace routing to minimize ringing and EMI. |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® technology | Delivers industry-leading RDS(on) × Qg figure-of-merit for reduced conduction + switching losses in high-frequency SMPS. |
| 100 % UIS tested | Guarantees avalanche energy handling up to 11.2 mJ, eliminating need for external snubbers in flyback or LLC primary switches. |
| 100 % Rg tested | Ensures consistent gate resistance (0.8–7.6 Ω), critical for predictable turn-on/turn-off timing and paralleling reliability. |
| Halogen-free & RoHS compliant | Meets IEC 61249-2-21 and Directive 2002/95/EC - required for telecom infrastructure and industrial equipment sold in EU/APAC markets. |
| PowerPAK® SO-8 thermal design | Bottom-exposed drain enables <3.3 °C/W junction-to-case resistance, supporting higher power density than standard SO-8. |
Applications
| Telecom 48 V DC/DC Converter | Industrial Motor Drive Half-Bridge |
|---|---|
|
Use Scenario: Primary-side switch in isolated 48 V input, 12 V output forward converter for base station power modules. IC Role / Device Role / Timing Role: High-side N-channel MOSFET operating at 250–500 kHz with synchronous rectification on secondary side. Use Value: Low Qg (9.5 nC) and RDS(on) (0.0305 Ω) reduce gate drive loss and conduction loss, improving full-load efficiency by ≥1.2 % vs. legacy 40 mΩ parts. |
Use Scenario: Low-side switch in 24–48 V industrial BLDC motor driver half-bridge stage controlling 5–10 A phase current. IC Role / Device Role / Timing Role: Fast-switching N-channel power switch with body diode conducting freewheeling current during dead time. Use Value: Body diode trr = 31 ns and Qrr = 28 nC minimize voltage overshoot and cross-conduction risk, reducing need for external Schottky clamps. |
| Server PSU Full-Bridge Topology | Industrial PLC Power Supply Input Stage |
|
Use Scenario: Upper and lower quadrant switch in 48 V input full-bridge DC/DC stage delivering 3.3 V/50 A to server motherboard VRMs. IC Role / Device Role / Timing Role: Symmetrically driven N-channel MOSFETs requiring matched RDS(on), Qg, and thermal impedance. Use Value: Tight RDS(on) distribution (0.0305 Ω typ., 0.033 Ω max @ 7.5 V) and 100 % Rg test ensure balanced current sharing and thermal stress across paralleled devices. |
Use Scenario: Input protection and soft-start switch in 24 V industrial PLC power supply handling surge transients per IEC 61000-4-5. IC Role / Device Role / Timing Role: Robust primary-side switch absorbing repetitive 100 V/15 A surge events via controlled avalanche operation. Use Value: 100 % UIS tested to 15 A single-pulse avalanche current and 11.2 mJ energy ensures no degradation after 100,000+ surge cycles. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 100 V power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF540NPBF | RDS(on) = 0.044 Ω @ 10 V; Qg = 71 nC; TO-220 package; no UIS rating. | Higher conduction loss and gate drive power; unsuitable for high-frequency or avalanche-prone designs. | Choose only for cost-sensitive, low-frequency (<100 kHz), non-UIS-critical linear or switching applications. |
| STP110N10F7 | RDS(on) = 0.011 Ω @ 10 V; Qg = 45 nC; TO-220FP package; 100 % UIS tested. | Lower RDS(on) but larger footprint and higher Qg; thermal resistance limited by plastic package. | Prefer when ultra-low on-resistance is mandatory and board space/thermal interface permits TO-220FP mounting. |
Compared with IRF540NPBF and STP110N10F7, SI7454CDP-T1-GE3 offers optimal balance of low RDS(on), moderate Qg, small PowerPAK® SO-8 footprint, and guaranteed UIS ruggedness - making it uniquely suited for space-constrained, high-reliability 48 V telecom and industrial DC/DC primary switches.
Availability
SI7454CDP-T1-GE3 is available at Aetrix Electronics and suitable for telecom infrastructure power supplies, industrial motor drives, and server PSU designs requiring stable component supply, long-term lifecycle support, and halogen-free compliance.
Supply support for SI7454CDP-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.
The Si7454CDP product line targets high-density, high-efficiency power conversion in telecom, server, and industrial applications - leveraging TrenchFET® technology and PowerPAK® packaging for superior thermal and electrical performance.
FAQ
What is the maximum continuous drain current for SI7454CDP-T1-GE3 at 70 °C case temperature?
The maximum continuous drain current for SI7454CDP-T1-GE3 is 17.6 A at TC = 70 °C, as specified in the Absolute Maximum Ratings table. This value reflects thermal derating due to reduced heat dissipation capability at elevated case temperatures and must be applied in thermal design calculations for SI7454CDP-T1-GE3.
Does SI7454CDP-T1-GE3 support 4.5 V gate drive in practical applications?
Yes, SI7454CDP-T1-GE3 is fully characterized at VGS = 4.5 V, with RDS(on) = 0.043 Ω (max) and ID = 18.5 A. Its VGS(th) range (1.2–2.8 V) ensures strong enhancement-mode turn-on with 4.5 V logic-level drivers, making SI7454CDP-T1-GE3 suitable for controller ICs without dedicated gate boosters.
Is SI7454CDP-T1-GE3 qualified for lead-free reflow soldering?
Yes, SI7454CDP-T1-GE3 is rated for peak reflow temperature of 260 °C per JEDEC J-STD-020, and its PowerPAK® SO-8 package is explicitly qualified for lead-free assembly. The "-GE3" suffix confirms lead (Pb)-free and halogen-free compliance per IEC 61249-2-21 and RoHS Directive 2002/95/EC.
What is the typical body diode forward voltage of SI7454CDP-T1-GE3 at 4 A?
The typical body diode forward voltage (VSD) of SI7454CDP-T1-GE3 is 0.78 V at IS = 4 A and TJ = 25 °C, with a maximum of 1.2 V. This low VSD minimizes conduction loss during freewheeling in half-bridge and synchronous rectifier applications using SI7454CDP-T1-GE3.
How does the thermal resistance of SI7454CDP-T1-GE3 compare between junction-to-case and junction-to-ambient?
SI7454CDP-T1-GE3 has a typical junction-to-case (drain) thermal resistance (RthJC) of 3.3 °C/W, versus a maximum junction-to-ambient (RthJA) of 30 °C/W on a 1" × 1" FR4 board. This 9× difference confirms that effective heatsinking via the exposed drain pad is essential - SI7454CDP-T1-GE3 performance depends critically on PCB copper area and thermal vias.
SI7454CDP-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 22A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 30.5mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id:
- 2.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 19.5 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 580 pF @ 50 V
- FET Feature:
- -
- Power Dissipation (Max):
- 4.1W (Ta), 29.7W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8
SI7454CDP-T1-GE3 FAQ
1.How can I place an order for SI7454CDP-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI7454CDP-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI7454CDP-T1-GE3 reliable?
The price and inventory of SI7454CDP-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI7454CDP-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SI7454CDP-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI7454CDP-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI7454CDP-T1-GE3?
SI7454CDP-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI7454CDP-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI7454CDP-T1-GE3?
For technical support, including SI7454CDP-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI7454CDP-T1-GE3 requirements.
6.How does Aetrix verify that SI7454CDP-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SI7454CDP-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI7454CDP-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SI7454CDP-T1-GE3?
All SI7454CDP-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI7454CDP-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI7454CDP-T1-GE3 part is unused and in its original packaging.
Return procedure for SI7454CDP-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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