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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI7455DP-T1-GE3

Name: SI7455DP-T1-GE3
Brand: Vishay Siliconix
SKU: SI7455DP-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI7455DP-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® SO-8

Datasheet:: SI7455DP-T1-GE3.pdf

Description:: MOSFET P-CH 80V 28A PPAK SO-8

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Product details

Overview

SI7455DP-T1-GE3 from Vishay Siliconix is a P-channel enhancement-mode TrenchFET® power MOSFET rated for -80 V drain-source voltage, 0.025 Ω R_DS(on) at V_GS = -10 V, and -28 A continuous drain current (package-limited, T_C = 25 °C). It operates in high-side switching configurations for DC-DC converters and load switches in industrial power supplies.

For engineers reviewing the SI7455DP-T1-GE3 datasheet, SI7455DP-T1-GE3 pinout, SI7455DP-T1-GE3 application, or SI7455DP-T1-GE3 equivalent, key selection criteria include verified R_DS(on) at -6 V gate drive, body diode recovery performance (t_rr = 60–90 ns), thermal resistance (R_thJC = 1.2 °C/W), and PowerPAK SO-8 leadless package compatibility with automated reflow.

Technical Context

This MOSFET employs trench-gate silicon technology to achieve low on-resistance and fast switching with controlled Q_g (65 nC typical at V_GS = -6 V) and low Crss (220 pF). Its negative threshold voltage (-2 to -4 V) ensures reliable turn-on with standard logic-level gate drivers in high-side configurations.

The device integrates a robust intrinsic body diode with V_SD = -0.8 to -1.2 V at -8.4 A and Q_rr = 150–235 nC, supporting synchronous rectification and flyback energy recovery in buck and half-bridge topologies without external diode addition.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-80 V - Supports input rails up to 60 V DC with 20 V margin for transients in industrial power systems.
R_DS(on)	0.025 Ω @ V_GS = -10 V - Delivers ≤ 2.8 W conduction loss at -10.5 A, enabling compact thermal design.
I_D (continuous)	-28 A @ T_C = 25 °C - Package-limited rating; usable up to -8.4 A at T_A = 70 °C on standard FR4 board.
Q_g	65 nC @ V_GS = -6 V - Enables efficient gate driving with low-power controllers in 100–500 kHz SMPS.
t_rr	60–90 ns - Limits switching losses and EMI during body diode commutation in hard-switched topologies.
R_thJC	1.2 °C/W - Allows direct heatsinking to metal chassis or PCB copper for >50 W dissipation with minimal ΔT.

Pinout & Package

SI7455DP-T1-GE3 uses the PowerPAK SO-8 - a leadless surface-mount package measuring 6.15 mm × 5.15 mm with exposed drain pads on the bottom for enhanced thermal transfer. The package has no leads; soldering relies on edge terminations and bottom-side copper contact.

Pin/Terminal	Circuit Role	Design Meaning
S (pins 1, 2, 3)	Source	Common return path for load current; tied to system ground or negative rail in high-side switch configuration.
G (pin 4)	Gate	Control terminal requiring negative V_GS for turn-on; driven by isolated or charge-pump gate driver.
D (pins 5–8)	Drain	Main power output node; electrically and thermally connected to large PCB copper area via bottom-side exposed pad.

Key Features

Feature	Design Value
TrenchFET® architecture	Enables 0.025 Ω R_DS(on) at -10 V while maintaining rugged avalanche capability (E_AS = 101 mJ).
Halogen-free construction	Complies with IEC 61249-2-21; eliminates brominated flame retardants without compromising package integrity.
Low Q_gd/Q_gs ratio	Q_gd = 29 nC, Q_gs = 22 nC - Improves switching controllability and reduces Miller-induced shoot-through risk.
Enhanced body diode softness	t_a/t_b = 45 ns / 15 ns - Reduces voltage overshoot and EMI during reverse recovery in inductive loads.

Applications

Industrial DC-DC Converters	High-Side Load Switches
Use Scenario: 48 V input to 12 V/24 V isolated or non-isolated buck converter in programmable logic controller (PLC) power modules. IC Role / Device Role / Timing Role: High-side synchronous rectifier or main switch in primary-side active clamp or secondary-side synchronous rectification stage. Use Value: 0.025 Ω R_DS(on) minimizes conduction loss at full load; 65 nC Q_g enables efficient 300 kHz operation with low gate drive power.	Use Scenario: Hot-swap and inrush control for 24–48 V backplane distribution in industrial automation I/O modules. IC Role / Device Role / Timing Role: High-side power switch with integrated body diode for bidirectional current blocking and controlled turn-on slew rate. Use Value: Verified t_rr = 60–90 ns and Q_rr = 150–235 nC prevent voltage spikes during load disconnect; R_thJC = 1.2 °C/W supports derating to -8.4 A at 70 °C ambient.
Motor Drive Half-Bridges	Telecom Power Supplies
Use Scenario: Low-side or high-side switch in 24–48 V brushed DC motor H-bridge drivers for factory robotics actuators. IC Role / Device Role / Timing Role: P-channel high-side switch paired with N-channel low-side device; body diode handles freewheeling current during PWM off-time. Use Value: V_SD = -0.8 to -1.2 V at -8.4 A ensures low forward drop during freewheeling; avalanche rating (IAS = -45 A) withstands inductive kickback.	Use Scenario: Primary-side OR-ing FET or hold-up switch in 48 V telecom rectifier modules meeting NEBS Level 3 requirements. IC Role / Device Role / Timing Role: High-reliability power path controller with halogen-free packaging and 150 °C max junction temperature rating. Use Value: Lead (Pb)-free and halogen-free construction meets RoHS and IPC-J-STD-020 reflow compliance; 101 mJ E_AS supports surge immunity testing.

Industrial DC-DC Converters

High-Side Load Switches

Use Scenario: 48 V input to 12 V/24 V isolated or non-isolated buck converter in programmable logic controller (PLC) power modules.

IC Role / Device Role / Timing Role: High-side synchronous rectifier or main switch in primary-side active clamp or secondary-side synchronous rectification stage.

Use Value: 0.025 Ω R_DS(on) minimizes conduction loss at full load; 65 nC Q_g enables efficient 300 kHz operation with low gate drive power.

Use Scenario: Hot-swap and inrush control for 24–48 V backplane distribution in industrial automation I/O modules.

IC Role / Device Role / Timing Role: High-side power switch with integrated body diode for bidirectional current blocking and controlled turn-on slew rate.

Use Value: Verified t_rr = 60–90 ns and Q_rr = 150–235 nC prevent voltage spikes during load disconnect; R_thJC = 1.2 °C/W supports derating to -8.4 A at 70 °C ambient.

Motor Drive Half-Bridges

Telecom Power Supplies

Use Scenario: Low-side or high-side switch in 24–48 V brushed DC motor H-bridge drivers for factory robotics actuators.

IC Role / Device Role / Timing Role: P-channel high-side switch paired with N-channel low-side device; body diode handles freewheeling current during PWM off-time.

Use Value: V_SD = -0.8 to -1.2 V at -8.4 A ensures low forward drop during freewheeling; avalanche rating (IAS = -45 A) withstands inductive kickback.

Use Scenario: Primary-side OR-ing FET or hold-up switch in 48 V telecom rectifier modules meeting NEBS Level 3 requirements.

IC Role / Device Role / Timing Role: High-reliability power path controller with halogen-free packaging and 150 °C max junction temperature rating.

Use Value: Lead (Pb)-free and halogen-free construction meets RoHS and IPC-J-STD-020 reflow compliance; 101 mJ E_AS supports surge immunity testing.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF9540NPBF	R_DS(on) = 0.2 Ω @ -10 V; slower switching (Q_g = 120 nC); TO-220 package.	Higher conduction loss limits use to <5 A loads; through-hole mounting requires manual assembly or wave soldering.	Select when legacy TO-220 footprint or higher avalanche energy (E_AS = 490 mJ) is prioritized over efficiency and density.
DMG2305UVT-7	R_DS(on) = 0.045 Ω @ -4.5 V; smaller SOT-23 package; lower I_D = -4.2 A.	Not suitable for >5 A continuous loads; lacks thermal mass for sustained power dissipation.	Choose for space-constrained low-current bias rails where gate drive voltage is limited to -4.5 V.

Compared with IRF9540NPBF and DMG2305UVT-7, SI7455DP-T1-GE3 delivers 5× lower R_DS(on) than the former and 6× higher current rating than the latter, while its PowerPAK SO-8 package enables automated assembly and superior thermal performance in mid-power industrial designs.

Availability

SI7455DP-T1-GE3 is available at Aetrix Electronics and suitable for industrial DC-DC converters, high-side load switches, and motor drive half-bridges requiring stable component supply, long-term lifecycle support, and halogen-free compliance.

Supply support for SI7455DP-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, optoelectronics, and passive components with emphasis on power efficiency and reliability.

The Si7455DP product line targets high-efficiency, high-density power conversion in industrial and telecom infrastructure, delivering optimized trench-based P-channel MOSFETs for high-side switching where gate drive simplicity and thermal performance are critical.

FAQ

What is the maximum continuous drain current for SI7455DP-T1-GE3 at 70 °C case temperature?

The SI7455DP-T1-GE3 supports -28 A continuous drain current at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This rating is package-limited and assumes proper PCB copper area and thermal interface to maintain junction temperature below 150 °C. Derating applies above 70 °C case temperature per the current derating curve.

Does SI7455DP-T1-GE3 require a negative gate drive voltage to operate?

Yes, SI7455DP-T1-GE3 is a P-channel MOSFET with a gate-source threshold voltage of -2 to -4 V. To fully enhance the channel and achieve R_DS(on) = 0.025 Ω, a V_GS of -10 V is required. Gate drive circuitry must provide a negative voltage relative to the source, typically using a charge pump or isolated driver.

Can SI7455DP-T1-GE3 be used in synchronous rectification applications?

Yes, SI7455DP-T1-GE3 is suitable for synchronous rectification due to its low R_DS(on), fast body diode recovery (t_rr = 60–90 ns), and low Q_rr (150–235 nC). Its V_SD of -0.8 to -1.2 V at -8.4 A reduces forward conduction loss compared to Schottky diodes in 12–24 V output stages.

What is the thermal resistance from junction to case (R_thJC) for SI7455DP-T1-GE3?

The SI7455DP-T1-GE3 has a typical junction-to-case thermal resistance of 1.2 °C/W, with a maximum of 1.5 °C/W. This value is measured from the silicon die to the exposed drain pad on the bottom of the PowerPAK SO-8 package and is critical for heatsink design in high-power applications.

Is SI7455DP-T1-GE3 compatible with lead-free reflow soldering processes?

Yes, SI7455DP-T1-GE3 is qualified for lead-free reflow soldering with a peak temperature of 260 °C, per the manufacturer's solder profile (www.vishay.com/ppg?73257). The PowerPAK SO-8 package is leadless, and the exposed copper terminations are designed for standard Pb-free SAC305 alloy profiles.

SI7455DP-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: PowerPAK® SO-8

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 80 V

Current - Continuous Drain (Id) @ 25°C:: 28A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 6V, 10V

Rds On (Max) @ Id, Vgs:: 25mOhm @ 10.5A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 155 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 5160 pF @ 40 V

FET Feature:: -

Power Dissipation (Max):: 5.2W (Ta), 83.3W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® SO-8

SI7455DP-T1-GE3 FAQ

1.How can I place an order for SI7455DP-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI7455DP-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI7455DP-T1-GE3 reliable?

The price and inventory of SI7455DP-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI7455DP-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SI7455DP-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI7455DP-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI7455DP-T1-GE3?

SI7455DP-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI7455DP-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI7455DP-T1-GE3?

For technical support, including SI7455DP-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI7455DP-T1-GE3 requirements.

6.How does Aetrix verify that SI7455DP-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SI7455DP-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI7455DP-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SI7455DP-T1-GE3?

All SI7455DP-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI7455DP-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI7455DP-T1-GE3 part is unused and in its original packaging.

Return procedure for SI7455DP-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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