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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI7621DN-T1-GE3

Name: SI7621DN-T1-GE3
Brand: Vishay Siliconix
SKU: SI7621DN-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI7621DN-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® 1212-8

Datasheet:: SI7621DN-T1-GE3.pdf

Description:: MOSFET P-CH 20V 4A PPAK1212-8

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Product details

Overview

SI7621DN-T1-GE3 from Vishay Siliconix is a P-channel enhancement-mode TrenchFET® Power MOSFET in PowerPAK® 1212-8 package, rated for -20 V V_DS, 0.090 Ω R_DS(on) at -4.5 V V_GS, and -4 A continuous drain current (T_C = 25 °C). It serves as a low-voltage load switch in space-constrained consumer and computing applications.

For engineers reviewing the SI7621DN-T1-GE3 datasheet, SI7621DN-T1-GE3 pinout, SI7621DN-T1-GE3 application, or SI7621DN-T1-GE3 equivalent, key selection criteria include its 1.07 mm profile, -2.5 V logic-level gate drive compatibility, 3.8 nC total gate charge, and halogen-free/RoHS-compliant construction.

Technical Context

This MOSFET uses trench-gate silicon technology to achieve low on-resistance with fast switching performance. Its -2.5 V threshold voltage enables direct interface with 2.5 V and 3.3 V logic controllers without level shifting.

The PowerPAK 1212-8 package delivers 8 °C/W typical junction-to-case thermal resistance and supports high-density PCB layouts. Body diode recovery time is 18–30 ns with 10–15 nC reverse recovery charge under specified test conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-20 V - Maximum blocking voltage for low-side or high-side load switching up to 20 V rail
R_DS(on)	0.090 Ω @ V_GS = -4.5 V - Enables <100 mW conduction loss at 3.9 A DC load current
I_D (cont)	-4 A @ T_C = 25 °C - Package-limited current rating suitable for compact board-mounted power switches
Q_g	3.9–5.9 nC @ V_GS = -4.5 V - Low gate charge reduces driver power demand and switching transition time
T_J Range	-55 to +150 °C - Supports operation in extended industrial temperature environments
R_thJC	8 °C/W (typ) - Enables efficient heat transfer to PCB copper when mounted on thermally enhanced pads

Pinout & Package

PowerPAK® 1212-8 is a leadless surface-mount package measuring 3.3 mm × 3.3 mm × 1.07 mm, with exposed drain pad on bottom for thermal and electrical connection.

Pin/Terminal	Circuit Role	Design Meaning
S (pins 1,2,3,4)	Source	Common return path for load current; electrically tied to four corner terminals for low-inductance routing
G (pin 5)	Gate	Control input requiring -4.5 V for full enhancement; 1.6–16 Ω gate resistance affects turn-on/turn-off speed
D (pins 6,7,8)	Drain	Main current-carrying terminal; connected to large internal copper paddle for thermal dissipation and low R_DS(on)

Key Features

Feature	Design Value
TrenchFET® architecture	Delivers 0.090 Ω R_DS(on) at -4.5 V V_GS in 3.3 mm × 3.3 mm footprint-enabling higher current density than planar MOSFETs
Logic-level gate drive	V_GS(th) = -0.7 to -2.0 V ensures reliable turn-on with standard 2.5 V/3.3 V microcontroller GPIO outputs
Low-profile PowerPAK® 1212-8	1.07 mm height allows use in ultra-thin devices such as portable SSDs and slim HDD modules
100% R_g tested	Guarantees gate resistance between 1.6 Ω and 16 Ω-critical for predictable switching timing in synchronous designs

Applications

HDD Power Management	USB Peripheral Load Switch
Use Scenario: Controlling 5 V or 3.3 V power rails to hard disk drive motor drivers and interface circuitry during sleep/wake transitions. IC Role / Device Role: High-side P-channel load switch enabling zero-current standby mode and inrush current limiting. Use Value: 0.090 Ω R_DS(on) minimizes voltage drop and self-heating during sustained 3–4 A HDD spin-up loads.	Use Scenario: Enabling/disabling VBUS power to USB 2.0 peripherals (e.g., hubs, card readers) under host controller command. IC Role / Device Role: Logic-controlled power switch with fast turn-off to meet USB suspend timing requirements. Use Value: 3.9 nC Q_g and 12 ns t_d(off) support sub-10 µs disable response, satisfying USB 2.0 suspend latency specs.
SSD Module Power Gating	Industrial Sensor Node Power Control
Use Scenario: Isolating NAND flash and controller power domains in M.2 or U.2 SSD modules to reduce leakage during idle states. IC Role / Device Role: Compact, low-R_DS(on) P-channel switch placed between system rail and SSD VCC supply. Use Value: 1.07 mm profile fits within tight M.2 keying constraints while maintaining 3.1 W P_D at T_A = 25 °C.	Use Scenario: Managing power to wireless transceivers and analog front-ends in battery-powered IIoT sensor nodes with duty-cycled operation. IC Role / Device Role: Low-quiescent-current load switch activated by MCU GPIO to extend battery life. Use Value: -1 µA I_DSS at -20 V and -100 nA I_GSS ensure negligible off-state leakage over multi-year deployments.

HDD Power Management

USB Peripheral Load Switch

Use Scenario: Controlling 5 V or 3.3 V power rails to hard disk drive motor drivers and interface circuitry during sleep/wake transitions.

IC Role / Device Role: High-side P-channel load switch enabling zero-current standby mode and inrush current limiting.

Use Value: 0.090 Ω R_DS(on) minimizes voltage drop and self-heating during sustained 3–4 A HDD spin-up loads.

Use Scenario: Enabling/disabling VBUS power to USB 2.0 peripherals (e.g., hubs, card readers) under host controller command.

IC Role / Device Role: Logic-controlled power switch with fast turn-off to meet USB suspend timing requirements.

Use Value: 3.9 nC Q_g and 12 ns t_d(off) support sub-10 µs disable response, satisfying USB 2.0 suspend latency specs.

SSD Module Power Gating

Industrial Sensor Node Power Control

Use Scenario: Isolating NAND flash and controller power domains in M.2 or U.2 SSD modules to reduce leakage during idle states.

IC Role / Device Role: Compact, low-R_DS(on) P-channel switch placed between system rail and SSD VCC supply.

Use Value: 1.07 mm profile fits within tight M.2 keying constraints while maintaining 3.1 W P_D at T_A = 25 °C.

Use Scenario: Managing power to wireless transceivers and analog front-ends in battery-powered IIoT sensor nodes with duty-cycled operation.

IC Role / Device Role: Low-quiescent-current load switch activated by MCU GPIO to extend battery life.

Use Value: -1 µA I_DSS at -20 V and -100 nA I_GSS ensure negligible off-state leakage over multi-year deployments.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel load switch applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si7620DN-T1-GE3	N-channel counterpart with same package and R_DS(on) (0.090 Ω @ V_GS = +4.5 V), requires high-side driver or bootstrap circuitry	Suitable only where N-channel topology is preferred and gate drive voltage exceeds source potential	Select Si7620DN-T1-GE3 only if system already implements high-side gate driving infrastructure
DMN2020LSD-13	P-channel, -20 V, 0.110 Ω R_DS(on) @ -4.5 V, SO-8 package (4.9 mm × 6.0 mm), higher thermal resistance (R_thJA = 62 °C/W)	Requires larger PCB area and delivers lower current density due to larger footprint and higher on-resistance	Choose DMN2020LSD-13 only when SO-8 compatibility or legacy layout reuse is mandatory

Compared with Si7620DN-T1-GE3 and DMN2020LSD-13, SI7621DN-T1-GE3 provides optimal balance of low-profile packaging, logic-level drive, and thermal efficiency for new compact designs-without requiring external gate drivers or sacrificing board space.

Availability

SI7621DN-T1-GE3 is available at Aetrix Electronics and suitable for HDD power management, USB peripheral load switching, and SSD module power gating requiring stable component supply, RoHS/halogen-free compliance, and consistent thermal performance across production batches.

Supply support for SI7621DN-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.

The Si7621DN belongs to Vishay's TrenchFET® Power MOSFET family, engineered specifically for low-voltage, high-density load switching in computing, storage, and portable electronics where minimal footprint and logic-level compatibility are critical.

FAQ

What is the maximum continuous drain current for SI7621DN-T1-GE3 at 70 °C case temperature?

The SI7621DN-T1-GE3 supports -4 A continuous drain current at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This rating reflects package thermal limits-not silicon capability-and assumes proper PCB copper area for heat spreading. Derating curves confirm linear reduction to -2 A at T_C = 125 °C. The SI7621DN-T1-GE3 must be mounted on ≥1" × 1" FR4 with adequate thermal vias to sustain this current.

Does SI7621DN-T1-GE3 require a gate resistor for safe operation?

While not strictly required, a series gate resistor (typically 10–100 Ω) is recommended with SI7621DN-T1-GE3 to control dV/dt and prevent ringing during switching. The device's 1.6–16 Ω intrinsic R_g (100% tested) interacts with driver impedance and PCB trace inductance; external resistance ensures predictable turn-on/turn-off timing and EMI control. SI7621DN-T1-GE3 gate drive energy remains low (≤6.2 nC), minimizing driver stress even without added resistance.

Can SI7621DN-T1-GE3 be used in high-side switching configurations?

Yes, SI7621DN-T1-GE3 is inherently suited for high-side P-channel switching due to its -20 V V_DS rating and negative V_GS(th). When placed between supply rail and load, it turns on with V_GS ≈ 0 V and turns off with V_GS = -V_CC. No level shifter is needed for 3.3 V or 5 V systems. SI7621DN-T1-GE3 achieves full enhancement at -4.5 V, making it compatible with standard logic outputs driving the gate through a pull-up resistor.

What is the body diode forward voltage of SI7621DN-T1-GE3 at -1.5 A?

The body diode forward voltage (V_SD) of SI7621DN-T1-GE3 is -0.8 V to -1.2 V at I_S = -1.5 A and V_GS = 0 V, per the "Drain-Source Body Diode Characteristics" section. This voltage drop is temperature-dependent, decreasing slightly as junction temperature rises. The SI7621DN-T1-GE3 body diode exhibits 18–30 ns reverse recovery time (t_rr) and 10–15 nC Q_rr, confirming suitability for non-synchronous buck or flyback freewheeling paths.

Is SI7621DN-T1-GE3 compatible with lead-free reflow profiles?

Yes, SI7621DN-T1-GE3 is qualified for lead-free reflow with peak solder temperature up to 260 °C, as stated in the "Soldering Recommendations" section. The PowerPAK 1212-8 package complies with JEDEC J-STD-020 moisture sensitivity level 1 (MSL1), meaning it may be stored indefinitely at ≤30 °C/85% RH without baking. SI7621DN-T1-GE3 is explicitly marked "Lead (Pb)-free and Halogen-free" in its ordering information.

SI7621DN-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: PowerPAK® 1212-8

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 4A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 2.5V, 4.5V

Rds On (Max) @ Id, Vgs:: 90mOhm @ 3.9A, 4.5V

Vgs(th) (Max) @ Id:: 2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 6.2 nC @ 5 V

Vgs (Max):: ±12V

Input Capacitance (Ciss) (Max) @ Vds:: 300 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 3.1W (Ta), 12.5W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® 1212-8

SI7621DN-T1-GE3 FAQ

1.How can I place an order for SI7621DN-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI7621DN-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI7621DN-T1-GE3 reliable?

The price and inventory of SI7621DN-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI7621DN-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SI7621DN-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI7621DN-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI7621DN-T1-GE3?

SI7621DN-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI7621DN-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI7621DN-T1-GE3?

For technical support, including SI7621DN-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI7621DN-T1-GE3 requirements.

6.How does Aetrix verify that SI7621DN-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SI7621DN-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI7621DN-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SI7621DN-T1-GE3?

All SI7621DN-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI7621DN-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI7621DN-T1-GE3 part is unused and in its original packaging.

Return procedure for SI7621DN-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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