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Vishay Siliconix SI7634BDP-T1-E3
- Part No.:
- SI7634BDP-T1-E3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SI7634BDP-T1-E3.pdf
- Description:
- MOSFET N-CH 30V 40A PPAK SO-8
- Quantity:
- Payment:
- Shipping:
Inventory:7,579
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Product details
Overview
SI7634BDP-T1-E3 from Vishay Siliconix is an N-channel 30 V (D-S) TrenchFET® power MOSFET in PowerPAK® SO-8 package, delivering RDS(on) = 5.4 mΩ at VGS = 10 V and 7.0 mΩ at VGS = 4.5 V, with 40 A continuous drain current (TC = 25 °C), used for high-efficiency low-side and high-side switching in notebook PC core power stages.
For engineers reviewing the SI7634BDP-T1-E3 datasheet, SI7634BDP-T1-E3 pinout, SI7634BDP-T1-E3 application, or SI7634BDP-T1-E3 equivalent, this device supports high-current synchronous buck conversion with fast switching (td(on) = 12 ns, tf = 8 ns at VGEN = 10 V), low gate charge (Qg = 21.5 nC at 4.5 V), and robust thermal performance (RthJC = 2.1 °C/W).
Technical Context
This MOSFET employs trench-gate silicon technology optimized for low RDS(on) and high current density, with fully characterized avalanche capability (EAS = 45 mJ) and 100 % Rg and avalanche testing per unit. Its gate threshold voltage (VGS(th) = 1.4–2.6 V) enables reliable 4.5 V logic-level drive in compact DC/DC converters.
The PowerPAK SO-8 package features exposed copper drain pads on the bottom side for direct thermal conduction to PCB copper, achieving junction-to-case thermal resistance of 2.1 °C/W - matching DPAK performance while retaining SO-8 footprint compatibility and enabling drop-in replacement in existing layouts.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - Maximum drain-source blocking voltage for 12 V input rail applications |
| RDS(on) @ VGS = 10 V | 5.4 mΩ - Enables <1 W conduction loss at 15 A in high-side switch position |
| RDS(on) @ VGS = 4.5 V | 7.0 mΩ - Supports efficient operation with 5 V or 4.5 V gate drive in dual-phase controllers |
| Qg | 21.5 nC - Low total gate charge reduces driver power loss and enables >1 MHz switching |
| ID (continuous) | 40 A @ TC = 25 °C - Sustains high load currents in notebook CPU/GPU VRMs without derating |
| RthJC | 2.1 °C/W - Enables direct heat transfer from die to PCB copper, critical for thermally constrained thin-profile designs |
| Body diode VSD | 0.75–1.1 V @ IS = 3 A - Low forward voltage minimizes reverse recovery losses in synchronous rectification |
Pinout & Package
SI7634BDP-T1-E3 uses the PowerPAK® SO-8 single-channel leadless package (6.15 mm × 5.15 mm × 1.04 mm), with exposed drain terminals on the bottom side for enhanced thermal conduction. The top-side pinout matches standard SO-8: pins 1–4 are Source, pins 5–8 are Drain, pin 3 is Gate - verified via Vishay S-80439 Rev. C and AN821.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 (top) | Source | Common source connection for internal parallel FETs; low-inductance return path for high di/dt currents |
| 5, 6, 7, 8 (top) | Drain | High-current drain node; electrically and thermally connected to bottom-side exposed copper pad |
| 3 (top) | Gate | Single gate input; low Rg (0.8–1.6 Ω) ensures stable turn-on/turn-off timing with minimal ringing |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® process | Enables 5.4 mΩ RDS(on) in SO-8 footprint - 3× lower on-resistance than typical SO-8 MOSFETs at same voltage rating |
| 100 % Rg tested | Guarantees gate resistance ≤1.6 Ω, ensuring predictable switching speed and driver stage stability |
| 100 % avalanche tested | Validates single-pulse ruggedness to 30 A and 45 mJ - critical for overvoltage transients in VRM output stages |
| PowerPAK SO-8 package | Matches SO-8 land pattern while delivering DPAK-level thermal performance (RthJC = 2.1 °C/W) |
| Lead (Pb)-free & halogen-free | Complies with RoHS Directive 2011/65/EU and JEDEC JS709C - suitable for global consumer electronics manufacturing |
Applications
| Notebook PC Core Voltage Regulator | Server DDR5 Memory Power Delivery |
|---|---|
Use Scenario: High-frequency synchronous buck converter supplying CPU/GPU core voltage (0.7–1.3 V) with >30 A peak current. IC Role / Device Role / Timing Role: High-side and low-side switching element; operates at 300–1000 kHz with precise dead-time control. Use Value: 7.0 mΩ RDS(on) at 4.5 V gate drive enables >95 % efficiency at 20 A load; low Qg reduces gate driver losses by 40 % vs. legacy SO-8 devices. |
Use Scenario: Dual-phase 12 V input → 1.1 V output VRM for DDR5 memory modules requiring tight voltage regulation and fast transient response. IC Role / Device Role / Timing Role: Low-side synchronous rectifier in interleaved phase; handles reverse recovery during high di/dt transitions. Use Value: Body diode VSD = 0.75 V and Qrr = 35 nC minimize shoot-through risk and reduce EMI generation during phase switching. |
| Industrial PLC I/O Power Switching | Automotive ADAS Camera Power Module |
Use Scenario: 24 V input DC/DC conversion for isolated I/O module power rails with 15 A steady-state load and surge tolerance. IC Role / Device Role / Timing Role: Primary switching transistor in non-isolated buck regulator; subjected to repetitive load dumps and cold-crank conditions. Use Value: Avalanche-rated (IAS = 30 A, EAS = 45 mJ) withstands 40 V transients without failure; RthJC = 2.1 °C/W maintains TJ < 125 °C under full load at 70 °C ambient. |
Use Scenario: Compact 12 V → 3.3 V point-of-load converter powering image sensor and ISP in automotive camera ECU. IC Role / Device Role / Timing Role: High-side switch in compact buck converter; must meet AEC-Q101 stress requirements and operate at -40 to +125 °C. Use Value: Qualified per AEC-Q101 (documented in Vishay reliability reports); 30 V VDS provides 2× margin over 12 V automotive supply; low profile (1.04 mm) fits under lens housing. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 30 V power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si7446DP-T1-E3 | RDS(on) = 6.0 mΩ @ 10 V; Qg = 25.5 nC; same PowerPAK SO-8 package | Slightly higher conduction loss but identical thermal and layout compatibility | Preferred when tighter VGS(th) distribution (1.2–2.2 V) is required for marginal gate drive margin |
| IRF7470PBF | Standard SO-8 package; RDS(on) = 8.0 mΩ @ 10 V; RthJC = 16 °C/W | Higher thermal resistance limits power handling; requires larger heatsink area | Only suitable for low-power (<10 A) or space-unconstrained designs where SO-8 footprint reuse is mandatory |
Compared with SI7634BDP-T1-E3, Si7446DP-T1-E3 offers tighter gate threshold control but slightly higher switching loss, while IRF7470PBF trades significant thermal performance for legacy SO-8 compatibility - making SI7634BDP-T1-E3 optimal for high-density, high-efficiency notebook and server VRMs.
Availability
SI7634BDP-T1-E3 is available at Aetrix Electronics and suitable for notebook PC core regulators, server DDR5 memory power delivery, industrial PLC I/O modules, and automotive ADAS camera power modules requiring stable component supply across long production lifecycles.
Supply support for SI7634BDP-T1-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.
The SI7634BDP-T1-E3 belongs to Vishay's TrenchFET® PowerPAK® SO-8 family, engineered specifically for high-current, high-frequency DC/DC conversion in space-constrained computing and communications systems.
FAQ
What is the maximum continuous drain current for SI7634BDP-T1-E3 at 70 °C case temperature?
The SI7634BDP-T1-E3 supports 40 A continuous drain current at TC = 70 °C, as specified in the Absolute Maximum Ratings table (Document Number: 74031, Rev. C). This rating reflects package-limited conduction capability under sustained thermal conditions and is validated by Vishay's production testing protocol.
Does SI7634BDP-T1-E3 support 4.5 V gate drive in synchronous buck applications?
Yes, SI7634BDP-T1-E3 is fully characterized for 4.5 V gate drive, with RDS(on) = 7.0 mΩ max at VGS = 4.5 V and ID = 10 A. Its VGS(th) range (1.4–2.6 V) ensures robust turn-on margin even with gate driver droop, making it suitable for controller ICs with 4.5 V output swing.
Is SI7634BDP-T1-E3 pin-compatible with standard SO-8 MOSFETs?
SI7634BDP-T1-E3 uses the PowerPAK® SO-8 package, which shares identical footprint and pinout with standard SO-8 - pins 1–4 are Source, pins 5–8 are Drain, pin 3 is Gate. However, its bottom-side exposed drain pad requires compatible PCB land pattern per Application Note AN821 for optimal thermal performance.
What is the avalanche energy rating for SI7634BDP-T1-E3?
The SI7634BDP-T1-E3 is rated for 45 mJ single-pulse avalanche energy (EAS) with L = 0.1 mH, as confirmed in the Absolute Maximum Ratings table. This rating is validated by 100 % production avalanche testing and supports robust operation during inductive switching transients in VRM output stages.
How does the thermal performance of SI7634BDP-T1-E3 compare to standard SO-8 MOSFETs?
SI7634BDP-T1-E3 achieves RthJC = 2.1 °C/W, matching DPAK performance and offering ~7.7× lower junction-to-case thermal resistance than standard SO-8 (16 °C/W). This enables up to 43 °C lower junction temperature rise under identical 2.7 W dissipation, directly improving RDS(on) stability and system reliability.
SI7634BDP-T1-E3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 5.4mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id:
- 2.6V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 68 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 3150 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 5W (Ta), 48W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8
SI7634BDP-T1-E3 FAQ
1.How can I place an order for SI7634BDP-T1-E3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI7634BDP-T1-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI7634BDP-T1-E3 reliable?
The price and inventory of SI7634BDP-T1-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI7634BDP-T1-E3 is usually 5 days.
3.What payment methods are accepted for SI7634BDP-T1-E3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI7634BDP-T1-E3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI7634BDP-T1-E3?
SI7634BDP-T1-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI7634BDP-T1-E3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI7634BDP-T1-E3?
For technical support, including SI7634BDP-T1-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI7634BDP-T1-E3 requirements.
6.How does Aetrix verify that SI7634BDP-T1-E3 is sourced from the original manufacturer or authorized distributors?
All SI7634BDP-T1-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI7634BDP-T1-E3 meets industry standards.
7.What is the process for return or replacement of SI7634BDP-T1-E3?
All SI7634BDP-T1-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SI7634BDP-T1-E3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI7634BDP-T1-E3 part is unused and in its original packaging.
Return procedure for SI7634BDP-T1-E3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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