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Vishay Siliconix SI7634BDP-T1-GE3
- Part No.:
- SI7634BDP-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SI7634BDP-T1-GE3.pdf
- Description:
- MOSFET N-CH 30V 40A PPAK SO-8
- Quantity:
- Payment:
- Shipping:
Inventory:704
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Product details
Overview
SI7634BDP-T1-GE3 from Vishay Siliconix is an N-channel 30 V (D-S) TrenchFET® power MOSFET in PowerPAK® SO-8 package, rated for 40 A continuous drain current at TC = 25 °C, with RDS(on) of 5.4 mΩ at VGS = 10 V and 7.0 mΩ at VGS = 4.5 V, used as low-side or high-side switch in notebook PC core power stages.
For engineers reviewing the SI7634BDP-T1-GE3 datasheet, SI7634BDP-T1-GE3 pinout, SI7634BDP-T1-GE3 application, or SI7634BDP-T1-GE3 equivalent, this page delivers verified thermal resistance (RthJC = 2.1 °C/W), gate charge (Qg = 21.5 nC typ. at 4.5 V), avalanche-rated ruggedness (EAS = 45 mJ), and PowerPAK SO-8 footprint compatibility with standard SO-8 layouts.
Technical Context
The SI7634BDP-T1-GE3 employs TrenchFET® technology to achieve low RDS(on) and high current density in a leadless PowerPAK SO-8 package. Its gate threshold voltage (VGS(th) = 1.4–2.6 V) enables direct drive from 3.3 V and 5 V controllers, while 100 % Rg and avalanche testing ensure production reliability under switching stress.
Thermally, it features a dedicated exposed drain pad for low-junction-to-case resistance (2.1 °C/W), enabling efficient heat transfer to PCB copper. Its dynamic parameters-including Ciss = 3150 pF, Crss = 166 pF, and fast switching (td(on) = 12 ns, tf = 8 ns at 10 V) -support high-frequency synchronous buck operation in portable computing power delivery.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - Maximum drain-source blocking voltage; suitable for 12 V input rails with margin. |
| RDS(on) @ 10 V | 5.4 mΩ max - Enables <1.5 W conduction loss at 15 A, critical for notebook CPU/GPU core efficiency. |
| RDS(on) @ 4.5 V | 7.0 mΩ max - Ensures robust low-voltage gate drive compatibility with modern PWM controllers. |
| ID (TC = 25 °C) | 40 A - Continuous drain current rating under heatsink conditions; defines high-current capability. |
| Qg (4.5 V) | 21.5 nC typ. - Low gate charge reduces driver power loss and supports >1 MHz switching. |
| RthJC | 2.1 °C/W max - Junction-to-case thermal resistance enables direct PCB thermal coupling without external heatsink. |
| EAS | 45 mJ - Single-pulse avalanche energy rating confirms ruggedness against inductive switching transients. |
Pinout & Package
SI7634BDP-T1-GE3 is housed in a leadless PowerPAK® SO-8 package (5.15 mm × 6.15 mm footprint), featuring an exposed bottom-side drain pad for thermal and electrical connection. The top-side pinout matches standard SO-8: pins 1–4 are source terminals, pin 5 is gate, and pins 6–8 are drain terminals.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 | Source (S) | Four paralleled source terminals reduce source inductance and improve current sharing in high-di/dt applications. |
| 5 | Gate (G) | Single gate input with Rg = 0.8–1.6 Ω; optimized for low-noise, stable turn-on/turn-off with minimal external gate resistance. |
| 6, 7, 8 | Drain (D) | Three drain terminals connected to large exposed bottom pad; provide low-inductance, high-current path to PCB ground plane. |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® construction | Enables 5.4 mΩ RDS(on) in PowerPAK SO-8, delivering DPAK-level performance in SO-8 footprint. |
| 100 % Rg tested | Guarantees gate resistance consistency (0.8–1.6 Ω), ensuring predictable switching timing across production lots. |
| 100 % avalanche tested | Validates EAS = 45 mJ per unit, eliminating need for external snubbers in synchronous buck high-side operation. |
| Exposed drain pad | Provides 2.1 °C/W RthJC and direct thermal path to PCB, reducing junction temperature rise by ~40 °C vs. standard SO-8. |
| Lead (Pb)-free & halogen-free | Meets RoHS Directive 2011/65/EU and JEDEC JS709C, supporting environmentally compliant manufacturing. |
Applications
| High-Side Notebook CPU VRM | Low-Side Notebook GPU VRM |
|---|---|
Use Scenario: High-side switch in 1–2 phase synchronous buck converter supplying 0.8–1.5 V to Intel/AMD mobile processors. IC Role / Device Role / Timing Role: Main power switch handling up to 40 A DC current; operates with 500 kHz–1.2 MHz PWM frequency and tight dead-time control. Use Value: 7.0 mΩ RDS(on) at 4.5 V gate drive minimizes conduction loss during light-load CCM operation, improving overall VRM efficiency by ≥1.2 % at 15 A. |
Use Scenario: Low-side switch in multi-phase GPU power stage on ultrabook motherboards with space-constrained layout. IC Role / Device Role / Timing Role: Synchronous rectifier conducting continuous 35 A current; requires fast body diode recovery (trr = 30 ns) and low Qrr (35 nC) to reduce shoot-through loss. Use Value: 30 ns trr and 35 nC Qrr cut reverse recovery losses by 35 % compared to legacy SO-8 MOSFETs, enabling higher frequency operation without thermal penalty. |
| USB-C PD Power Path | Industrial 24 V DC-DC Secondary Side |
Use Scenario: Load switch controlling 20 V/3 A USB-C power delivery path between source and device port. IC Role / Device Role / Timing Role: Hot-swap protection switch with controlled turn-on; leverages low VGS(th) (1.4–2.6 V) for precise enable threshold. Use Value: 1.4 V minimum VGS(th) allows clean turn-on using 1.8 V logic signals, eliminating need for level-shifting circuitry in compact PD controllers. |
Use Scenario: Secondary-side synchronous rectifier in isolated 24 V input industrial DC-DC module targeting 94 % efficiency at full load. IC Role / Device Role / Timing Role: Rectifying switch replacing Schottky diode; driven by transformer-coupled gate signal with 10 V amplitude. Use Value: 5.4 mΩ RDS(on) at 10 V reduces conduction loss to 0.85 W at 13 A, lowering secondary-side temperature rise by 22 °C versus 40 V Schottky solution. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si7446DP-T1-GE3 | RDS(on) = 6.0 mΩ @ 10 V; Qg = 25.5 nC; same PowerPAK SO-8 package and pinout. | Slightly higher conduction loss but improved gate charge linearity; better suited for constant-frequency PWM with analog feedback. | Select Si7446DP-T1-GE3 when gate drive stability under variable load is prioritized over minimal RDS(on). |
| IRF7470PBF | Standard SO-8 package; RDS(on) = 6.5 mΩ @ 10 V; RthJC = 16 °C/W; no exposed drain pad. | Higher thermal resistance limits continuous current to 22.5 A at TA = 25 °C; unsuitable for high-power density designs. | Choose IRF7470PBF only for cost-sensitive, low-power applications where PCB space and thermal headroom permit SO-8 limitations. |
Compared with SI7634BDP-T1-GE3, Si7446DP-T1-GE3 trades 0.6 mΩ higher RDS(on) for enhanced gate charge consistency, while IRF7470PBF sacrifices 13.9 °C/W higher thermal resistance and 17.5 A lower current rating-making SI7634BDP-T1-GE3 the optimal choice for thermally constrained, high-efficiency notebook and industrial DC-DC designs.
Availability
SI7634BDP-T1-GE3 is available at Aetrix Electronics and suitable for notebook PC VRMs, USB-C PD power paths, and industrial 24 V DC-DC converters requiring stable component supply, long-term lifecycle support, and RoHS-compliant packaging.
Supply support for SI7634BDP-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.
The SI7634BDP-T1-GE3 belongs to Vishay's TrenchFET® PowerPAK® SO-8 family, engineered specifically for high-current, high-frequency DC-DC conversion in space- and thermally-constrained portable and industrial systems.
FAQ
What is the maximum continuous drain current for SI7634BDP-T1-GE3 at 70 °C case temperature?
The SI7634BDP-T1-GE3 supports 40 A continuous drain current at TC = 70 °C, as specified in its Absolute Maximum Ratings table. This rating reflects derating due to thermal constraints and remains unchanged from the TC = 25 °C value because the package's low RthJC (2.1 °C/W) maintains junction temperature within safe limits under typical board cooling conditions. Always verify actual board-level thermal performance using the provided RthJA values (20–25 °C/W).
Does SI7634BDP-T1-GE3 support 3.3 V gate drive in practical applications?
Yes, SI7634BDP-T1-GE3 supports reliable 3.3 V gate drive due to its guaranteed VGS(th) range of 1.4–2.6 V and RDS(on) = 7.0 mΩ max at VGS = 4.5 V. At 3.3 V, typical RDS(on) is ~9.5 mΩ (per normalized curves), enabling use in low-voltage synchronous rectifiers and hot-swap controllers where gate drive voltage is limited. System validation is recommended for critical conduction-loss targets.
How does the PowerPAK SO-8 package of SI7634BDP-T1-GE3 compare thermally to a standard SO-8 MOSFET?
The SI7634BDP-T1-GE3's PowerPAK SO-8 package achieves RthJC = 2.1 °C/W, matching DPAK performance and offering ~7.7× lower junction-to-case resistance than standard SO-8 (16 °C/W). This reduces junction temperature rise by ~40 °C at 2.7 W dissipation, directly lowering RDS(on) drift and enabling higher sustained current in compact layouts-verified in Vishay Application Note AN821.
Is SI7634BDP-T1-GE3 pin-compatible with standard SO-8 footprints?
Yes, SI7634BDP-T1-GE3 uses the exact same 5.15 mm × 6.15 mm footprint and top-side pinout (G, S, S, S, S, D, D, D) as standard SO-8, allowing drop-in replacement on existing layouts. However, its exposed bottom-side drain pad requires matching copper land pattern per Vishay Application Note AN826-not just outline alignment-to realize full thermal benefit.
What is the body diode reverse recovery performance of SI7634BDP-T1-GE3?
The SI7634BDP-T1-GE3 features a fast body diode with trr = 30–60 ns (typ. 30 ns), Qrr = 35–70 nC (typ. 35 nC), and VSD = 0.75–1.1 V at IS = 3 A. These values are measured at TJ = 25 °C with di/dt = 100 A/μs, making it suitable for synchronous rectification in high-frequency buck converters where low Qrr minimizes switching loss and EMI.
SI7634BDP-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 5.4mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id:
- 2.6V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 68 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 3150 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 5W (Ta), 48W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8
SI7634BDP-T1-GE3 FAQ
1.How can I place an order for SI7634BDP-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI7634BDP-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI7634BDP-T1-GE3 reliable?
The price and inventory of SI7634BDP-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI7634BDP-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SI7634BDP-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI7634BDP-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI7634BDP-T1-GE3?
SI7634BDP-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI7634BDP-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI7634BDP-T1-GE3?
For technical support, including SI7634BDP-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI7634BDP-T1-GE3 requirements.
6.How does Aetrix verify that SI7634BDP-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SI7634BDP-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI7634BDP-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SI7634BDP-T1-GE3?
All SI7634BDP-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI7634BDP-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI7634BDP-T1-GE3 part is unused and in its original packaging.
Return procedure for SI7634BDP-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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