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Vishay Siliconix SI7668ADP-T1-E3
- Part No.:
- SI7668ADP-T1-E3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SI7668ADP-T1-E3.pdf
- Description:
- MOSFET N-CH 30V 40A PPAK SO-8
- Quantity:
- Payment:
- Shipping:
Inventory:9,093
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Product details
Overview
SI7668ADP-T1-E3 from Vishay Siliconix is an N-channel 30-V TrenchFET® Power MOSFET in PowerPAK® SO-8 package, rated for 40 A continuous drain current at TC = 25 °C, with RDS(on) of 3.0 mΩ at VGS = 10 V and 3.4 mΩ at VGS = 4.5 V, used as a low-side switch in notebook VRM modules and telecom DC/DC converters.
For engineers reviewing the SI7668ADP-T1-E3 datasheet, SI7668ADP-T1-E3 pinout, SI7668ADP-T1-E3 application, or SI7668ADP-T1-E3 equivalent, this page delivers verified electrical specs, thermal performance data, package footprint compatibility with standard SO-8 layouts, and real-world substitution guidance for high-current synchronous buck designs.
Technical Context
The SI7668ADP-T1-E3 employs trench-gate silicon technology optimized for low RDS(on) and fast switching in high-efficiency DC/DC conversion. Its gate charge profile (Qg = 52 nC typ. at VGS = 4.5 V) supports operation with standard PWM controllers, while its 1.0 °C/W junction-to-case thermal resistance enables direct thermal coupling to PCB copper.
Designed for low-side synchronous rectification, it features a robust body diode (trr = 46 ns typ., Qrr = 51 nC) and operates within -55 °C to +150 °C junction temperature range. The PowerPAK® SO-8 package maintains identical pinout and footprint to standard SO-8 but replaces leads with exposed drain pads for enhanced thermal conduction.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - Maximum blocking voltage compatible with 24 V input rails and 12 V intermediate bus systems. |
| RDS(on) | 3.0 mΩ @ VGS = 10 V - Enables <1 W conduction loss at 20 A, critical for high-current VRM output stages. |
| ID (TC = 25 °C) | 40 A - Continuous current rating achievable with minimal heatsinking on 1" × 1" FR4 board. |
| Qg | 52 nC @ VGS = 4.5 V - Low gate charge reduces driver power demand and switching losses in 300–1000 kHz applications. |
| RthJC | 1.0 °C/W - Junction-to-case thermal resistance allows direct thermal path to PCB copper, matching DPAK-level cooling. |
| VGS(th) | 0.6–1.8 V - Gate threshold ensures reliable turn-on with 3.3 V or 5 V logic-level drivers without level shifting. |
| Body Diode trr | 46 ns typ. - Fast reverse recovery minimizes shoot-through risk and EMI in synchronous buck topologies. |
Pinout & Package
PowerPAK® SO-8 is a leadless surface-mount package with identical footprint and pinout to standard SO-8, featuring exposed drain terminals on the bottom for low thermal resistance. Dimensions: 6.15 mm × 5.15 mm × 1.04 mm (L × W × H).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 | Drain (D) | Four parallel drain terminals forming one low-inductance, high-current path to PCB copper pour. |
| 5 | Gate (G) | Single gate input with 0.5–1.5 Ω gate resistance; compatible with standard MOSFET drivers without external gate resistor. |
| 6, 7, 8 | Source (S) | Three-source terminals tied internally to substrate; provides low-impedance return path for high di/dt currents. |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® architecture | Enables 3.0 mΩ RDS(on) in SO-8 footprint-2× lower than typical SO-8 MOSFETs at same voltage rating. |
| 100 % Rg tested | Guarantees gate resistance ≤1.5 Ω, ensuring predictable rise/fall times and driver compatibility. |
| Halogen-free construction | Meets IEC 61249-2-21, supporting RoHS-compliant and environmentally regulated end equipment. |
| Exposed drain pad | Provides direct thermal interface to PCB; achieves RthJC = 1.0 °C/W-equivalent to DPAK performance. |
| Lead (Pb)-free termination | SnAgCu solder finish compliant with JEDEC J-STD-020 reflow profiles up to 260 °C peak. |
Applications
| Server VRM Output Stage | Notebook CPU Core Supply |
|---|---|
Use Scenario: High-current, high-frequency synchronous buck converter delivering 1–2 V @ 40+ A to server CPUs. IC Role / Device Role: Low-side power switch handling continuous 40 A conduction with minimal conduction loss. Use Value: 3.0 mΩ RDS(on) limits I²R loss to ≤1.6 W at 40 A, reducing thermal load and enabling compact 2-phase designs. |
Use Scenario: Compact dual-phase VRM powering mobile Intel/AMD processors in ultrabooks. IC Role / Device Role: Low-side FET operating at 500–1000 kHz with 4.5 V gate drive from integrated controller. Use Value: 52 nC Qg at 4.5 V enables efficient switching with low-driver power consumption and reduced gate-drive losses. |
| Fixed Telecom DC/DC Module | Industrial PLC Power Distribution |
Use Scenario: 48 V input to 12 V/24 V isolated DC/DC converter in telecom shelf power supplies. IC Role / Device Role: Secondary-side synchronous rectifier in forward or active-clamp topology. Use Value: 46 ns body diode trr and 51 nC Qrr minimize reverse recovery losses and improve efficiency >94% at full load. |
Use Scenario: High-reliability 24 V distribution switch controlling motor drives or I/O modules in factory automation. IC Role / Device Role: Low-side load switch with overcurrent protection and thermal shutdown coordination. Use Value: -55 °C to +150 °C operating range and 125 mJ single-pulse avalanche energy support harsh industrial environments. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 30-V MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si7850DP-T1-GE3 | RDS(on) = 2.7 mΩ @ 10 V, Qg = 62 nC, PowerPAK® SO-8, halogen-free and Pb-free. | Higher gate charge increases driver loss; better suited for lower-frequency (<500 kHz) high-current apps where lowest RDS(on) dominates. | Choose Si7850DP-T1-GE3 when absolute minimum conduction loss is prioritized over switching speed. |
| IRF7470PBF | RDS(on) = 3.2 mΩ @ 10 V, Qg = 45 nC, standard SO-8 package, RthJC = 16 °C/W. | Higher thermal resistance requires larger heatsink or derating; not suitable for same PCB thermal design. | Choose IRF7470PBF only if legacy SO-8 layout must be retained and thermal margin is available. |
Compared with SI7668ADP-T1-E3, Si7850DP-T1-GE3 offers lower RDS(on) but higher Qg, increasing switching loss; IRF7470PBF matches footprint but lacks PowerPAK's thermal advantage, requiring 16× higher thermal resistance management for equivalent power dissipation.
Availability
SI7668ADP-T1-E3 is available at Aetrix Electronics and suitable for notebook VRM modules, telecom DC/DC converters, and industrial PLC power distribution requiring stable component supply across multi-year production cycles.
Supply support for SI7668ADP-T1-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for power management and signal conditioning.
The SI7668ADP-T1-E3 belongs to Vishay's TrenchFET® Power MOSFET family, engineered for high-current, high-efficiency DC/DC conversion in space-constrained computing and telecom infrastructure.
FAQ
What is the maximum continuous drain current for SI7668ADP-T1-E3 at 70 °C case temperature?
The SI7668ADP-T1-E3 supports 32 A continuous drain current at TC = 70 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits under steady-state conditions on a 1" × 1" FR4 board, and aligns with the 65 °C/W junction-to-ambient thermal resistance under those test conditions. SI7668ADP-T1-E3 maintains safe operation up to TJ = 150 °C.
Does SI7668ADP-T1-E3 require a heatsink in typical VRM applications?
No external heatsink is required for SI7668ADP-T1-E3 in standard VRM applications when mounted on adequate PCB copper. Its PowerPAK® SO-8 package delivers RthJC = 1.0 °C/W, allowing heat to transfer directly to internal or external copper planes. With ≥1 in² of 2-oz copper connected to the drain pad, SI7668ADP-T1-E3 sustains 40 A at TC = 25 °C without additional cooling.
Is SI7668ADP-T1-E3 pin-compatible with standard SO-8 MOSFETs?
Yes, SI7668ADP-T1-E3 uses the PowerPAK® SO-8 package with identical pinout, footprint, and land pattern compatibility to standard SO-8 devices. Pin 1–4 are drains, pin 5 is gate, and pins 6–8 are sources-matching SO-8 conventions. However, the exposed drain pad requires no lead-forming and relies on bottom-side soldering per JEDEC J-STD-020.
What is the gate threshold voltage range for SI7668ADP-T1-E3?
The gate threshold voltage (VGS(th)) for SI7668ADP-T1-E3 is specified from 0.6 V to 1.8 V at ID = 250 µA, with a typical value of 1.4 V at ID = 5 mA. This wide range ensures reliable turn-on with 3.3 V logic-level drivers and compatibility with 5 V gate drive, while maintaining noise immunity in noisy power environments. SI7668ADP-T1-E3 remains fully enhanced above 2.5 V VGS.
Can SI7668ADP-T1-E3 be used in synchronous rectification for isolated DC/DC converters?
Yes, SI7668ADP-T1-E3 is qualified for synchronous rectification in isolated DC/DC topologies such as forward and active-clamp converters. Its fast body diode (trr = 46 ns typ., Qrr = 51 nC) and low RDS(on) reduce conduction and recovery losses. SI7668ADP-T1-E3 supports gate drive voltages down to 4.5 V, enabling use with standard synchronous rectifier controllers like UCC24612 or NCP4306.
SI7668ADP-T1-E3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 3mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id:
- 1.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 170 nC @ 10 V
- Vgs (Max):
- ±12V
- Input Capacitance (Ciss) (Max) @ Vds:
- 8820 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 5.4W (Ta), 83W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8
SI7668ADP-T1-E3 FAQ
1.How can I place an order for SI7668ADP-T1-E3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI7668ADP-T1-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI7668ADP-T1-E3 reliable?
The price and inventory of SI7668ADP-T1-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI7668ADP-T1-E3 is usually 5 days.
3.What payment methods are accepted for SI7668ADP-T1-E3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI7668ADP-T1-E3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI7668ADP-T1-E3?
SI7668ADP-T1-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI7668ADP-T1-E3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI7668ADP-T1-E3?
For technical support, including SI7668ADP-T1-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI7668ADP-T1-E3 requirements.
6.How does Aetrix verify that SI7668ADP-T1-E3 is sourced from the original manufacturer or authorized distributors?
All SI7668ADP-T1-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI7668ADP-T1-E3 meets industry standards.
7.What is the process for return or replacement of SI7668ADP-T1-E3?
All SI7668ADP-T1-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SI7668ADP-T1-E3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI7668ADP-T1-E3 part is unused and in its original packaging.
Return procedure for SI7668ADP-T1-E3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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