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Vishay Siliconix SI7674DP-T1-GE3
- Part No.:
- SI7674DP-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SI7674DP-T1-GE3.pdf
- Description:
- MOSFET N-CH 30V 40A PPAK SO-8
- Quantity:
- Payment:
- Shipping:
Inventory:2,670
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Product details
Overview
SI7674DP-T1-GE3 from Vishay Siliconix is a lead-free and halogen-free N-channel 30 V MOSFET in PowerPAK SO-8 package, delivering 40 A continuous drain current at TC = 25 °C, RDS(on) = 3.3 mΩ at VGS = 10 V, and Qg = 37 nC (typ.), optimized for high-efficiency DC/DC core power stages in notebook computers.
For engineers reviewing the SI7674DP-T1-GE3 datasheet, SI7674DP-T1-GE3 pinout, SI7674DP-T1-GE3 application, or SI7674DP-T1-GE3 equivalent, key selection criteria include low gate charge for fast switching, tight RDS(on) tolerance at 4.5 V drive, avalanche ruggedness, thermal resistance (RthJC = 1.0 °C/W typ.), and halogen-free compliance per IEC 61249-2-21.
Technical Context
This MOSFET uses trench MOSFET technology with optimized cell layout to minimize Qgd and reduce switching losses in synchronous buck converters. Its gate threshold voltage (VGS(th) = 1.0–3.0 V) supports both 5 V and 3.3 V gate drive, and its body diode exhibits trr = 47–70 ns with Qrr = 50–80 nC for controlled reverse recovery in high-frequency operation.
The PowerPAK SO-8 package features exposed copper drain pads on the bottom surface for low-inductance, high-current routing and enhanced thermal conduction to PCB copper. Absolute maximum ratings include VDS = 30 V, VGS = ±20 V, and single-pulse avalanche energy EAS = 80 mJ - validated per JEDEC JESD24-1.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - Maximum drain-source blocking voltage for 12 V input rail applications with margin. |
| RDS(on) | 3.3 mΩ @ VGS = 10 V - Enables <1 W conduction loss at 40 A, critical for high-current CPU VRMs. |
| Qg | 37 nC (typ.) - Low total gate charge reduces driver power and enables >1 MHz switching without excessive gate drive loss. |
| ID (cont) | 40 A @ TC = 25 °C - Sustains full load current when mounted on 1" × 1" FR4 with adequate copper area. |
| RthJC | 1.0 °C/W (typ.) - Enables efficient heat transfer from junction to heatsink or PCB thermal plane. |
| EAS | 80 mJ - Confirmed avalanche energy rating ensures robustness against inductive switching transients in DC/DC converters. |
Pinout & Package
PowerPAK SO-8 (leadless, bottom-exposed drain) package with 6.15 mm × 5.15 mm footprint and 0.95 mm height. Exposed drain terminals on bottom provide low thermal resistance and high-current capability.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G | Gate | Control terminal accepting 0–10 V logic-level drive; Rg = 0.95–1.5 Ω limits ringing and simplifies gate driver design. |
| S | Source | Reference node for gate drive and current sensing; tied to power ground in high-side or low-side configurations. |
| D (pins 1, 2, 3, 4, 7, 8) | Drain | High-current output path; all eight terminals are internally connected to the same drain metallization, enabling parallel routing and low-inductance layout. |
Key Features
| Feature | Design Value |
|---|---|
| Extremely low Qgd | 6.8 nC - Reduces Miller-induced switching delay and dv/dt-induced false turn-on in hard-switched topologies. |
| 100 % Rg tested | Ensures consistent gate drive timing across production lots, critical for multi-phase current balancing. |
| 100 % avalanche tested | Guarantees minimum 80 mJ single-pulse energy handling without degradation, supporting reliable overcurrent protection. |
| Halogen-free construction | Complies with IEC 61249-2-21 and RoHS 2002/95/EC - required for consumer electronics and notebook OEMs. |
Applications
| Core DC/DC Converter | Notebook CPU Voltage Regulator |
|---|---|
Use Scenario: High-frequency synchronous buck converter supplying core voltage to Intel/AMD mobile processors. IC Role / Device Role / Timing Role: Low-side switch in dual-MOSFET power stage, operating at 300–1000 kHz with 40 A peak current. Use Value: 3.3 mΩ RDS(on) minimizes conduction loss under heavy load; 37 nC Qg enables efficient high-frequency switching with minimal gate driver loss. | Use Scenario: Notebook motherboard VRM delivering dynamically scaled voltage (0.6–1.5 V) to CPU under varying workload. IC Role / Device Role / Timing Role: Primary power FET in multiphase buck regulator, thermally coupled to copper pour for passive cooling. Use Value: RthJC = 1.0 °C/W allows direct thermal coupling to PCB; avalanche rating protects against load dump and phase imbalance faults. |
| GPU Power Delivery | High-Density Point-of-Load Module |
Use Scenario: Discrete FET in compact GPU VRM on gaming laptop PCB with space-constrained layout. IC Role / Device Role / Timing Role: High-current, low-RDS(on) switch paired with Si7673DP for complementary high-side operation. Use Value: PowerPAK SO-8 footprint fits dense layouts; halogen-free and Pb-free compliance meets global environmental requirements. | Use Scenario: Embedded PoL module powering FPGA or ASIC in industrial edge computing device. IC Role / Device Role / Timing Role: Final-stage power switch in isolated or non-isolated buck converter operating at 500 kHz with tight thermal budget. Use Value: 40 A continuous rating at TC = 25 °C supports high transient current demands; 100 % capacitance testing ensures stable Ciss/Coss for predictable loop response. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRLHS6242TRPBF | RDS(on) = 3.1 mΩ @ 10 V, Qg = 32 nC, but rated only to 25 V VDS; smaller 3.3 × 3.3 mm PQFN package. | Limited to ≤20 V input rails; unsuitable for 24 V tolerant designs or systems requiring 30 V blocking margin. | Select when board space is constrained and input voltage stays below 20 V; verify avalanche capability not required. |
| DMN3026LSD-13 | RDS(on) = 3.5 mΩ @ 10 V, Qg = 45 nC, SO-8 package, but no 100 % avalanche test documentation; RoHS-compliant only (not halogen-free). | Higher gate charge increases driver loss at >500 kHz; lacks halogen-free certification for strict environmental compliance programs. | Acceptable where halogen-free is not mandated and switching frequency remains ≤300 kHz. |
Compared with IRLHS6242TRPBF and DMN3026LSD-13, the SI7674DP-T1-GE3 provides superior 30 V blocking margin, verified 80 mJ avalanche energy, and certified halogen-free construction - making it the preferred choice for notebook core power where reliability, efficiency, and regulatory compliance are jointly critical.
Availability
SI7674DP-T1-GE3 is available at Aetrix Electronics and suitable for notebook DC/DC converters, CPU voltage regulators, and GPU power delivery systems requiring stable component supply, long-term lifecycle support, and halogen-free compliance.
Supply support for SI7674DP-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on performance, reliability, and manufacturability.
The Si7674DP product line targets high-efficiency, high-current DC/DC power conversion in portable computing and embedded systems, emphasizing low RDS(on), low Qg, and robust package thermal performance.
FAQ
What is the maximum continuous drain current rating for SI7674DP-T1-GE3 at 70 °C case temperature?
The SI7674DP-T1-GE3 supports 32 A continuous drain current at TC = 70 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the PowerPAK SO-8 package under sustained high-power operation and must be validated with actual PCB layout and copper area.
Does SI7674DP-T1-GE3 support 4.5 V gate drive in practical applications?
Yes, the SI7674DP-T1-GE3 is fully characterized at VGS = 4.5 V, delivering RDS(on) = 4.6 mΩ (max) and supporting 40 A pulsed current. Its VGS(th) range of 1.0–3.0 V ensures reliable turn-on with standard 3.3 V or 5 V logic drivers without level shifting.
Is SI7674DP-T1-GE3 qualified for automotive applications?
No, the SI7674DP-T1-GE3 is not AEC-Q101 qualified and is intended for commercial and industrial applications including notebooks and computing equipment. It does not meet automotive temperature range, qualification testing, or traceability requirements.
What is the thermal resistance from junction to ambient for SI7674DP-T1-GE3 on a standard 1" × 1" FR4 board?
On a 1" × 1" FR4 board, the SI7674DP-T1-GE3 has RthJA = 18 °C/W (typ.) and 23 °C/W (max), as measured per JEDEC JESD51-3. Actual performance depends on PCB copper thickness, layer count, and thermal via density beneath the exposed drain pad.
How is avalanche ruggedness verified for SI7674DP-T1-GE3?
The SI7674DP-T1-GE3 undergoes 100 % single-pulse avalanche testing per JEDEC JESD24-1, guaranteeing minimum EAS = 80 mJ at IAS = 40 A and L = 0.1 mH. This validation ensures safe operation during inductive switching events in DC/DC converters without parameter shift or failure.
SI7674DP-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 3.3mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id:
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 90 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 5910 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 5.4W (Ta), 83W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8
SI7674DP-T1-GE3 FAQ
1.How can I place an order for SI7674DP-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI7674DP-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI7674DP-T1-GE3 reliable?
The price and inventory of SI7674DP-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI7674DP-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SI7674DP-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI7674DP-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI7674DP-T1-GE3?
SI7674DP-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI7674DP-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI7674DP-T1-GE3?
For technical support, including SI7674DP-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI7674DP-T1-GE3 requirements.
6.How does Aetrix verify that SI7674DP-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SI7674DP-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI7674DP-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SI7674DP-T1-GE3?
All SI7674DP-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI7674DP-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI7674DP-T1-GE3 part is unused and in its original packaging.
Return procedure for SI7674DP-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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