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Vishay Siliconix SI7726DN-T1-GE3
- Part No.:
- SI7726DN-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® 1212-8
- Datasheet:
-
SI7726DN-T1-GE3.pdf
- Description:
- MOSFET N-CH 30V 35A PPAK1212-8
- Quantity:
- Payment:
- Shipping:
Inventory:8,878
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Product details
Overview
SI7726DN-T1-GE3 from Vishay Siliconix is an N-channel 30-V trench MOSFET with integrated Schottky diode in a PowerPAK® 1212-8 package. It delivers RDS(on) = 9.5 mΩ at VGS = 10 V and 12.5 mΩ at VGS = 4.5 V, supports 35 A continuous drain current (TC = 25 °C), and features 12.5 nC total gate charge - optimized for high-efficiency DC/DC converters in notebook and point-of-load applications.
For engineers reviewing the SI7726DN-T1-GE3 datasheet, SI7726DN-T1-GE3 pinout, SI7726DN-T1-GE3 application, or SI7726DN-T1-GE3 equivalent, key selection criteria include its monolithic SkyFET architecture, ultra-low thermal resistance (RthJC = 1.9 °C/W), lead-free/halogen-free compliance, and validated performance in synchronous rectification and POL converter topologies.
Technical Context
This device integrates a trench-based N-channel power MOSFET and a co-packaged Schottky diode in a single PowerPAK 1212-8 footprint. Its gate threshold voltage (VGS(th)) ranges from 1.4 V to 2.6 V, enabling robust 4.5 V logic-level drive compatibility while maintaining low leakage (IGSS ≤ ±100 nA).
The monolithic construction eliminates parasitic inductance between MOSFET and diode, reducing reverse recovery losses. Body diode characteristics include VSD = 0.56–0.7 V at IS = 1 A and trr = 22–40 ns, supporting fast-switching synchronous buck stages without external diode substitution.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - Maximum drain-source blocking voltage; suitable for 24 V input rails and 12 V intermediate bus systems. |
| RDS(on) @ 10 V | 9.5 mΩ - Enables <1.5 W conduction loss at 35 A, critical for high-current POL efficiency. |
| RDS(on) @ 4.5 V | 12.5 mΩ - Ensures full enhancement with standard 5 V or 3.3 V gate drivers in compact converter designs. |
| Qg | 12.5 nC (at 4.5 V) - Low gate charge reduces driver power and switching loss in MHz-range converters. |
| ID (continuous) | 35 A (TC = 25 °C) - Package-limited current rating; enables high-density power stages without external heatsinking. |
| RthJC | 1.9 °C/W - Ultra-low junction-to-case thermal resistance allows direct PCB copper cooling, minimizing temperature rise under load. |
| VSD | 0.56–0.7 V - Low forward voltage of integrated Schottky diode reduces body-diode conduction loss during dead-time. |
Pinout & Package
SI7726DN-T1-GE3 uses the PowerPAK® 1212-8 surface-mount package (3.30 mm × 3.30 mm, 1.07 mm profile), featuring exposed drain pads on the bottom side for optimal thermal transfer. The package is lead-free and halogen-free per RoHS.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 | Drain (D) | Four parallel drain terminals connected to large bottom-side copper pad; primary thermal and current path to PCB. |
| 5 | Gate (G) | Single gate input; requires <12.5 nC charge for full enhancement; compatible with 3.3 V/5 V logic drivers. |
| 6, 7, 8 | Source (S) | Three source terminals tied to internal MOSFET source and Schottky cathode; forms return path for both FET and diode currents. |
Key Features
| Feature | Design Value |
|---|---|
| SkyFET Monolithic Integration | Co-packaged trench MOSFET + Schottky diode eliminates interconnect inductance and layout complexity in synchronous rectifiers. |
| PowerPAK 1212-8 Thermal Performance | RthJC = 1.9 °C/W enables >50 W power dissipation with minimal board copper - 20× better than TSSOP-8. |
| 100 % Rg Tested | Guarantees gate resistance ≤ 2.5 Ω, ensuring consistent turn-on/turn-off timing across production lots. |
| Low Qgd/Qg Ratio | Qgd = 3.2 nC / Qg = 12.5 nC → ~26 % - improves hard-switching robustness and reduces Miller-induced shoot-through risk. |
| Halogen-Free Construction | Meets IEC 61249-2-21 requirements; supports environmentally compliant industrial and computing end equipment. |
Applications
| Notebook DC/DC Converter | Point-of-Load (POL) Regulator |
|---|---|
Use Scenario: High-current CPU/GPU core voltage regulation in ultrathin notebooks with strict height constraints. IC Role / Device Role / Timing Role: Synchronous rectifier switch in buck converter output stage, operating at 300–1000 kHz with 4.5 V gate drive. Use Value: 12.5 mΩ RDS(on) at 4.5 V ensures full enhancement without level-shifting; 1.07 mm profile fits sub-1 mm height envelopes. |
Use Scenario: Distributed 3.3 V or 1.8 V regulation for FPGA, ASIC, or memory subsystems on server motherboards. IC Role / Device Role / Timing Role: High-side or low-side switch in multiphase buck converters, handling up to 35 A per phase with tight thermal margins. Use Value: RthJC = 1.9 °C/W allows direct thermal coupling to inner-layer copper planes, sustaining 35 A with <30 °C junction rise. |
| Industrial DC/DC Module | Telecom Intermediate Bus Converter |
Use Scenario: Compact 24 V input to 5 V/12 V isolated or non-isolated converters in programmable logic controllers and sensor nodes. IC Role / Device Role / Timing Role: Primary-side synchronous rectifier in active-clamp forward or LLC resonant topologies. Use Value: Integrated Schottky diode provides reliable freewheeling during dead time, eliminating need for external diode and saving 2.5 mm² board area. |
Use Scenario: 48 V to 12 V intermediate bus conversion in telecom base station power supplies with high reliability requirements. IC Role / Device Role / Timing Role: Low-side switch in high-frequency synchronous buck regulators operating at 500 kHz–1 MHz. Use Value: 9.5 mΩ RDS(on) at 10 V minimizes conduction loss at full load; 100 % Rg test ensures timing consistency across temperature and lifetime. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel MOSFET with integrated Schottky diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si7862DP-T1-GE3 | Same PowerPAK 1212-8 package, but 40 V VDS, higher RDS(on) (14.5 mΩ @ 10 V), no integrated Schottky diode. | Requires external Schottky for synchronous rectification; suited for 36 V input systems where higher breakdown is needed. | Select when 40 V rating is mandatory and discrete diode integration is acceptable. |
| IRF7759L2TRPBF | SO-8 package, 30 V, RDS(on) = 10.5 mΩ @ 10 V, no integrated Schottky; RthJC = 3.0 °C/W. | Larger footprint (5.0 × 6.0 mm), higher thermal resistance limits current density; requires separate diode for synchronous operation. | Choose only if SO-8 compatibility or legacy layout reuse is required; inferior thermal and integration performance vs. SI7726DN-T1-GE3. |
Compared with Si7862DP-T1-GE3 and IRF7759L2TRPBF, SI7726DN-T1-GE3 uniquely combines 30 V rating, monolithic Schottky integration, 1.9 °C/W thermal resistance, and 3.3 mm × 3.3 mm footprint - delivering highest power density and lowest system-level component count for space-constrained POL and notebook DC/DC designs.
Availability
SI7726DN-T1-GE3 is available at Aetrix Electronics and suitable for notebook power management, point-of-load regulation, and industrial DC/DC converter applications requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing.
Supply support for SI7726DN-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.
The SI7726DN-T1-GE3 belongs to Vishay's SkyFET PowerPAK family, engineered specifically for high-current, high-frequency DC/DC conversion where low RDS(on), fast switching, and thermal efficiency are critical.
FAQ
What is the maximum continuous drain current rating for SI7726DN-T1-GE3 at 70 °C case temperature?
The SI7726DN-T1-GE3 supports 35 A continuous drain current at TC = 70 °C, as specified in the Absolute Maximum Ratings table. This rating is package-limited and assumes proper PCB copper thermal management per Vishay's recommended land patterns for the PowerPAK 1212-8 package. Derating is not required between 25 °C and 70 °C case temperature.
Does SI7726DN-T1-GE3 require an external Schottky diode in synchronous buck applications?
No, SI7726DN-T1-GE3 does not require an external Schottky diode. It integrates a monolithic Schottky diode co-packaged with the N-channel MOSFET, providing inherent body-diode replacement functionality. The VSD of 0.56–0.7 V at 1 A and trr of 22–40 ns enable efficient freewheeling during dead-time without additional components.
What is the gate threshold voltage range for SI7726DN-T1-GE3, and how does it affect 3.3 V drive compatibility?
The gate threshold voltage (VGS(th)) for SI7726DN-T1-GE3 is 1.4 V to 2.6 V, ensuring reliable turn-on with 3.3 V gate drive. At VGS = 4.5 V, RDS(on) is guaranteed ≤ 12.5 mΩ, confirming full enhancement under typical logic-level conditions - making SI7726DN-T1-GE3 suitable for direct connection to 3.3 V microcontroller GPIOs or dedicated gate drivers.
Can SI7726DN-T1-GE3 be used in avalanche-rated applications?
SI7726DN-T1-GE3 is rated for single-pulse avalanche energy (EAS) of 20 mJ and single-pulse avalanche current (IAS) of 20 A, as defined in the Absolute Maximum Ratings. These values apply under specified test conditions (L = 0.1 mH); however, Vishay does not characterize or guarantee repetitive avalanche capability. For designs requiring sustained avalanche operation, derating and validation per application conditions are mandatory.
What reflow profile should be used for SI7726DN-T1-GE3 during PCB assembly?
SI7726DN-T1-GE3 requires a lead-free reflow profile with peak temperature of 240 °C (+5/−0 °C), time above 180 °C of 70–180 seconds, and maximum ramp-down rate of 6 °C/s. Full details are provided in Vishay document 73257. Manual soldering with an iron is not recommended due to the leadless PowerPAK 1212-8 construction and exposed copper terminations.
SI7726DN-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- SkyFET®, TrenchFET®
- Package/Case:
- PowerPAK® 1212-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 35A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 9.5mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id:
- 2.6V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 43 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1765 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3.8W (Ta), 52W (Tc)
- Operating Temperature:
- -50°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® 1212-8
SI7726DN-T1-GE3 FAQ
1.How can I place an order for SI7726DN-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI7726DN-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI7726DN-T1-GE3 reliable?
The price and inventory of SI7726DN-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI7726DN-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SI7726DN-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI7726DN-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI7726DN-T1-GE3?
SI7726DN-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI7726DN-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI7726DN-T1-GE3?
For technical support, including SI7726DN-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI7726DN-T1-GE3 requirements.
6.How does Aetrix verify that SI7726DN-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SI7726DN-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI7726DN-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SI7726DN-T1-GE3?
All SI7726DN-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI7726DN-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI7726DN-T1-GE3 part is unused and in its original packaging.
Return procedure for SI7726DN-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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