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Vishay Siliconix SI7742DP-T1-GE3
- Part No.:
- SI7742DP-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SI7742DP-T1-GE3.pdf
- Description:
- MOSFET N-CH 30V 60A PPAK SO-8
- Quantity:
- Payment:
- Shipping:
Inventory:9,789
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Product details
Overview
SI7742DP-T1-GE3 from Vishay Siliconix is an N-channel 30 V (D-S) Power MOSFET with integrated Schottky diode in a leadless PowerPAK® SO-8 package. It delivers 60 A continuous drain current at TC = 25 °C, RDS(on) = 3.5 mΩ at VGS = 10 V, and 4.5 mΩ at VGS = 4.5 V, enabling high-efficiency low-side switching in server VRM and POL DC/DC converters.
For engineers reviewing the SI7742DP-T1-GE3 datasheet, SI7742DP-T1-GE3 pinout, SI7742DP-T1-GE3 application, or SI7742DP-T1-GE3 equivalent, key selection criteria include its monolithic SkyFET® trench architecture, 100 % UIS-tested ruggedness, junction-to-case thermal resistance of 1.0 °C/W, and compatibility with standard SO-8 land patterns for drop-in replacement in high-current power stages.
Technical Context
This device integrates a trench-gate N-channel MOSFET and a co-packaged Schottky diode in a single PowerPAK® SO-8 footprint. Its monolithic SkyFET® construction enables simultaneous optimization of RDS(on), Qg (34 nC at VGS = 4.5 V), and body diode recovery (trr = 31 ns, Qrr = 20.5 nC).
The PowerPAK® SO-8 package exposes the drain pad on the bottom surface for direct thermal conduction to the PCB, achieving RthJC = 1.0 °C/W (typical) - matching DPAK performance while retaining SO-8 pinout and layout compatibility. It supports reflow soldering up to 260 °C peak and is rated for operation from –55 °C to +150 °C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - Maximum blocking voltage for low-voltage synchronous rectification and POL output stages. |
| RDS(on) | 3.5 mΩ @ VGS = 10 V - Enables <1 W conduction loss at 60 A, critical for high-current server VRMs. |
| ID (continuous) | 60 A @ TC = 25 °C - Package-limited current rating suitable for multi-phase CPU/GPU power delivery. |
| Qg | 34 nC @ VGS = 4.5 V - Low gate charge reduces drive loss and enables efficient operation with 5 V gate drivers. |
| VSD | 0.45–0.6 V @ IS = 3 A - Low forward voltage Schottky diode minimizes reverse-recovery losses in freewheeling paths. |
| trr | 31 ns (typ.) - Fast body diode recovery reduces shoot-through risk and EMI in hard-switched topologies. |
| RthJC | 1.0 °C/W (typ.) - Enables high-power dissipation with minimal junction temperature rise when mounted on copper-filled pads. |
Pinout & Package
SI7742DP-T1-GE3 uses the leadless PowerPAK® SO-8 package (6.15 mm × 5.15 mm), featuring exposed drain terminals on the bottom and standard SO-8 pinout on the top side. The package is RoHS-compliant, halogen-free, and optimized for high thermal conductivity via direct PCB copper contact.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 | Drain (D) | Four parallel drain terminals connected to the exposed bottom pad - primary thermal and current path to PCB ground plane. |
| 5 | Gate (G) | Control input for MOSFET channel; requires <10 V drive for full enhancement; Rg = 0.2–1.8 Ω (typ./max). |
| 6, 7, 8 | Source (S) | Three-source terminals tied to internal source metallization; forms return path for load current and Schottky cathode. |
Key Features
| Feature | Design Value |
|---|---|
| SkyFET® Monolithic Integration | Co-optimized trench MOSFET + Schottky diode in one die - eliminates parasitic inductance and ensures matched thermal behavior. |
| 100 % UIS Tested | Guarantees avalanche ruggedness up to IAS = 50 A and EAS = 125 mJ - essential for reliability in transient-heavy POL applications. |
| PowerPAK® SO-8 Footprint | Direct SO-8 land pattern compatibility - no PCB redesign needed when upgrading from legacy SO-8 MOSFETs. |
| Low RthJC (1.0 °C/W) | Enables >80 W power dissipation with <100 °C junction rise over case - supports compact, high-density power modules. |
| Halogen-Free & RoHS | Complies with IEC 61249-2-21 and Directive 2002/95/EC - meets environmental requirements for enterprise and telecom equipment. |
Applications
| Server VRM Output Stage | High-Current POL Converter |
|---|---|
Use Scenario: Final-stage synchronous rectification in multi-phase 12 V → 0.8 V CPU/GPU VRMs. IC Role / Device Role / Timing Role: Low-side switch with integrated Schottky freewheeling path - handles 60 A continuous current per phase. Use Value: 3.5 mΩ RDS(on) and 31 ns trr reduce conduction and switching losses, improving efficiency by ≥1.2 % at 200 A total load. |
Use Scenario: Point-of-load regulation for ASIC/FPGA core supplies in networking switches and storage controllers. IC Role / Device Role / Timing Role: High-current, low-VDS switching element operating at 300–600 kHz with 4.5 V gate drive. Use Value: 34 nC Qg at 4.5 V enables fast turn-on with standard gate drivers, minimizing dead-time losses and improving light-load efficiency. |
| DC/DC Buck Converter Low-Side | High-Density Power Module |
Use Scenario: Low-side switch in isolated/non-isolated buck converters delivering 40–80 A to AI accelerator cards. IC Role / Device Role / Timing Role: Main current-handling transistor with integrated Schottky diode for reduced external component count. Use Value: Integrated Schottky eliminates need for discrete diode, saving 2.5 mm² board area and reducing BOM cost by $0.18/unit. |
Use Scenario: Embedded power stage in modular 48 V → 12 V intermediate bus converters for data center racks. IC Role / Device Role / Timing Role: Thermally optimized MOSFET enabling >95 % efficiency at 50 A with minimal heatsinking. Use Value: 1.0 °C/W RthJC allows junction temperature to track PCB temperature within ±2 °C - simplifies thermal modeling and derating. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 30 V MOSFET with integrated Schottky diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SiR872DP-T1-GE3 | RDS(on) = 2.8 mΩ @ 10 V (lower), Qg = 42 nC @ 4.5 V (higher), same PowerPAK® SO-8 package. | Better conduction loss but higher gate drive demand; suited for fixed 10 V gate drive systems. | Prefer SiR872DP-T1-GE3 if gate driver supports 10 V and lowest RDS(on) is prioritized over Qg. |
| IRF67221TRPbF | RDS(on) = 3.8 mΩ @ 10 V, Qg = 29 nC @ 4.5 V, PQFN 5×6 mm package (non-SO-8 compatible). | Lower Qg improves switching efficiency but requires PCB redesign due to different footprint and thermal pad layout. | Choose IRF67221TRPbF only when optimizing for gate drive loss and layout flexibility outweighs SO-8 compatibility needs. |
Compared with SiR872DP-T1-GE3 and IRF67221TRPbF, SI7742DP-T1-GE3 offers the best balance of ultra-low RDS(on), moderate Qg, and drop-in SO-8 compatibility - making it ideal for incremental upgrades in existing VRM designs without layout changes.
Availability
SI7742DP-T1-GE3 is available at Aetrix Electronics and suitable for server VRM, high-current POL, and industrial DC/DC converter applications requiring stable component supply, long-term lifecycle support, and consistent parametric performance across production batches.
Supply support for SI7742DP-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for power management and signal conditioning.
The SI7742DP-T1-GE3 belongs to Vishay's SkyFET® PowerPAK® SO-8 family, engineered specifically for high-efficiency, high-current DC/DC conversion in data center, telecom, and computing infrastructure where thermal density and reliability are critical.
FAQ
What is the maximum continuous drain current rating for SI7742DP-T1-GE3?
The SI7742DP-T1-GE3 is rated for 60 A continuous drain current at TC = 25 °C, limited by package thermal capability. At TC = 70 °C, the rating remains 60 A; at TA = 25 °C (free air), it drops to 29 A due to ambient thermal constraints. This reflects its design for PCB-mounted, heatsink-assisted operation rather than free-air use.
Does SI7742DP-T1-GE3 require a heatsink in typical server VRM applications?
No dedicated heatsink is required for SI7742DP-T1-GE3 in standard server VRM layouts. Its PowerPAK® SO-8 package achieves RthJC = 1.0 °C/W (typ.), allowing effective heat transfer directly to the PCB copper. With ≥1 in² of 2-oz copper under the drain pad, junction temperature stays below 105 °C at 60 A, eliminating need for external heatsinks.
Is SI7742DP-T1-GE3 pin-compatible with standard SO-8 MOSFETs?
Yes - SI7742DP-T1-GE3 uses the exact same pinout and footprint as industry-standard SO-8 packages. Pin 1–4 are drains, pin 5 is gate, and pins 6–8 are sources. It mounts directly onto existing SO-8 land patterns without modification, though optimal thermal performance requires extended drain copper area per Vishay Application Note AN821.
What is the significance of the "-GE3" suffix in SI7742DP-T1-GE3?
The "-GE3" suffix denotes Vishay's lead (Pb)-free and halogen-free construction, compliant with RoHS Directive 2002/95/EC and IEC 61249-2-21. It confirms that SI7742DP-T1-GE3 uses matte tin plating and green molding compound, with no brominated flame retardants or PVC - meeting environmental requirements for enterprise and telecom equipment.
Can SI7742DP-T1-GE3 be used in synchronous rectification topologies?
Yes - SI7742DP-T1-GE3 is explicitly designed for synchronous rectification, especially as a low-side switch. Its integrated Schottky diode provides fast, low-loss freewheeling, and its 31 ns body diode reverse recovery time minimizes cross-conduction losses. Combined with 3.5 mΩ RDS(on), it enables >95 % efficiency in 12 V → 1 V buck converters at 50 A.
SI7742DP-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- SkyFET®, TrenchFET®
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 3.5mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id:
- 2.7V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 115 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 5300 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 5.4W (Ta), 83W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8
SI7742DP-T1-GE3 FAQ
1.How can I place an order for SI7742DP-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI7742DP-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI7742DP-T1-GE3 reliable?
The price and inventory of SI7742DP-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI7742DP-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SI7742DP-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI7742DP-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI7742DP-T1-GE3?
SI7742DP-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI7742DP-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI7742DP-T1-GE3?
For technical support, including SI7742DP-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI7742DP-T1-GE3 requirements.
6.How does Aetrix verify that SI7742DP-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SI7742DP-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI7742DP-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SI7742DP-T1-GE3?
All SI7742DP-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI7742DP-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI7742DP-T1-GE3 part is unused and in its original packaging.
Return procedure for SI7742DP-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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