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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI7774DP-T1-GE3

Name: SI7774DP-T1-GE3
Brand: Vishay Siliconix
SKU: SI7774DP-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI7774DP-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® SO-8

Datasheet:: SI7774DP-T1-GE3.pdf

Description:: MOSFET N-CH 30V 60A PPAK SO-8

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Product details

Overview

SI7774DP-T1-GE3 from Vishay Siliconix is an N-channel 30 V (D-S) Power MOSFET with integrated Schottky diode in a PowerPAK® SO-8 package, delivering R_DS(on) = 3.8 mΩ at V_GS = 10 V and 4.7 mΩ at V_GS = 4.5 V, rated for 60 A continuous drain current at T_C = 25 °C, and optimized for low-side switching in VRM/point-of-load power stages for servers and notebooks.

For engineers reviewing the SI7774DP-T1-GE3 datasheet, SI7774DP-T1-GE3 pinout, SI7774DP-T1-GE3 application, or SI7774DP-T1-GE3 equivalent, key selection considerations include its monolithic SkyFET® trench architecture, 100 % UIS and R_g tested reliability, lead-free/halogen-free compliance, and thermal performance matching DPAK while retaining SO-8 footprint compatibility.

Technical Context

This device integrates a high-current N-channel MOSFET and a co-packaged Schottky diode in a single PowerPAK® SO-8 leadless package, enabling synchronous rectification and body-diode-assisted operation in DC-DC converters. Its trench-based SkyFET® structure achieves low gate charge (Q_g = 21.5 nC typ. at V_GS = 4.5 V) and fast switching (t_d(off) = 29–59 ns), supporting high-frequency POL designs.

The MOSFET features a gate threshold voltage of 1.0–2.2 V, operates up to 150 °C junction temperature, and includes robust avalanche capability (E_AS = 80 mJ). Its thermal design leverages exposed copper drain pads for low R_thJC = 2.1 °C/W (typ.), enabling efficient heat transfer to PCB copper without external heatsinking in space-constrained server and notebook applications.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum drain-source blocking voltage; suitable for 12 V input bus and 3.3/1.8/1.2 V output POL stages.
R_DS(on)	3.8 mΩ @ V_GS = 10 V - Enables <1 W conduction loss at 15 A, critical for high-efficiency server VRMs.
I_D (cont.)	60 A @ T_C = 25 °C - Package-limited current rating; supports high-current low-side switch in multi-phase buck converters.
Q_g	21.5 nC @ V_GS = 4.5 V - Low gate drive energy reduces controller driver losses and enables 500 kHz+ switching in compact designs.
V_SD	0.45–0.6 V @ I_S = 5 A - Low forward voltage Schottky diode minimizes reverse-recovery losses during dead-time conduction.
R_thJC	2.1 °C/W (typ.) - Thermal resistance from junction to case enables direct PCB thermal coupling; matches DPAK-level cooling in SO-8 footprint.
t_rr	22–44 ns - Fast body diode recovery reduces shoot-through risk and EMI in synchronous buck topologies.

Pinout & Package

SI7774DP-T1-GE3 uses the PowerPAK® SO-8 leadless package (6.15 mm × 5.15 mm), featuring exposed copper drain terminals on the bottom for enhanced thermal conduction and identical pinout to standard SO-8 - enabling drop-in replacement in existing layouts with improved thermal performance.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control terminal for MOSFET channel; requires <2.2 V threshold to turn on; low C_iss = 2630 pF eases drive requirements.
2 (S)	Source	Reference node for gate drive and current sensing; tied to power ground in low-side configuration.
3 (D)	Drain	Main current path output; connected to input rail in low-side switch; thermally coupled to PCB via exposed pad.
4 (D)	Drain	Second drain terminal; paralleled with Pin 3 to reduce package inductance and improve current sharing in high-frequency operation.
5 (D)	Drain	Third drain terminal; extends thermal and electrical connection area for lower R_DS(on) stability under transient loads.
6 (D)	Drain	Fourth drain terminal; completes symmetric drain layout for balanced current distribution and minimized loop inductance.
7 (S)	Source	Secondary source connection; provides low-inductance return path for Schottky diode and MOSFET body diode conduction.
8 (S)	Source	Third source terminal; enhances grounding integrity and reduces common-source inductance in high-dI/dt switching.

Key Features

Feature	Design Value
SkyFET® Monolithic Integration	Combines trench MOSFET and Schottky diode in one die + package - eliminates discrete diode placement, reduces board area, and ensures matched thermal behavior.
100 % UIS Tested	Guarantees ruggedness against inductive switching stress without derating - essential for reliable operation in unregulated or fault-prone POL environments.
PowerPAK® SO-8 Footprint	Maintains SO-8 pinout and land pattern compatibility while delivering DPAK-level thermal performance (R_thJC = 2.1 °C/W) - enables upgrade without PCB redesign.
Lead (Pb)-free & Halogen-free	Complies with RoHS 2002/95/EC and IEC 61249-2-21 - meets environmental requirements for enterprise and datacenter equipment.
Low Q_gd/Q_gs Ratio	Q_gd = 6.1 nC, Q_gs = 5.8 nC - improves Miller immunity and enables stable hard-switching at >1 MHz in advanced POL controllers.

Applications

Server VRM Low-Side Switch	Notebook POL Converter
Use Scenario: High-current, multi-phase buck converter supplying CPU core voltage (V_DD) in 1U rack servers with tight thermal constraints. IC Role / Device Role / Timing Role: Low-side synchronous rectifier switch operating at 300–600 kHz; handles peak currents up to 60 A per phase with minimal conduction loss. Use Value: 3.8 mΩ R_DS(on) at 10 V gate drive reduces I²R loss by >30 % vs. legacy SO-8 MOSFETs, directly improving system efficiency and reducing heatsink requirements.	Use Scenario: Compact, high-efficiency point-of-load regulator powering GPU or memory subsystem in ultrathin notebooks. IC Role / Device Role / Timing Role: Low-side switch in 500 kHz–1 MHz buck stage; leverages integrated Schottky diode for seamless dead-time conduction and reduced EMI. Use Value: 0.45 V V_SD and 22 ns t_rr minimize reverse-recovery losses and enable smaller output capacitors, saving board space and BOM cost.
Data Center POL Module	High-Density Telecom PSU
Use Scenario: Modular, hot-swappable 12 V–1.0 V POL module used across AI accelerator racks requiring high power density and long-term reliability. IC Role / Device Role / Timing Role: Primary low-side power switch in interleaved 3-phase topology; operates continuously at T_J up to 135 °C under full load. Use Value: 150 °C max T_J rating and 100 % UIS testing ensure field reliability over 10-year service life in always-on infrastructure.	Use Scenario: Secondary-side synchronous rectification in high-efficiency telecom AC-DC front-end with distributed 48 V intermediate bus. IC Role / Device Role / Timing Role: Low-side switch in isolated forward or active-clamp forward converter; conducts high pulsed currents during duty-cycle transitions. Use Value: 80 A I_DM pulse rating and 40 A I_AS avalanche current support robust operation during line transients and startup surges.

Server VRM Low-Side Switch

Notebook POL Converter

Use Scenario: High-current, multi-phase buck converter supplying CPU core voltage (V_DD) in 1U rack servers with tight thermal constraints.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier switch operating at 300–600 kHz; handles peak currents up to 60 A per phase with minimal conduction loss.

Use Value: 3.8 mΩ R_DS(on) at 10 V gate drive reduces I²R loss by >30 % vs. legacy SO-8 MOSFETs, directly improving system efficiency and reducing heatsink requirements.

Use Scenario: Compact, high-efficiency point-of-load regulator powering GPU or memory subsystem in ultrathin notebooks.

IC Role / Device Role / Timing Role: Low-side switch in 500 kHz–1 MHz buck stage; leverages integrated Schottky diode for seamless dead-time conduction and reduced EMI.

Use Value: 0.45 V V_SD and 22 ns t_rr minimize reverse-recovery losses and enable smaller output capacitors, saving board space and BOM cost.

Data Center POL Module

High-Density Telecom PSU

Use Scenario: Modular, hot-swappable 12 V–1.0 V POL module used across AI accelerator racks requiring high power density and long-term reliability.

IC Role / Device Role / Timing Role: Primary low-side power switch in interleaved 3-phase topology; operates continuously at T_J up to 135 °C under full load.

Use Value: 150 °C max T_J rating and 100 % UIS testing ensure field reliability over 10-year service life in always-on infrastructure.

Use Scenario: Secondary-side synchronous rectification in high-efficiency telecom AC-DC front-end with distributed 48 V intermediate bus.

IC Role / Device Role / Timing Role: Low-side switch in isolated forward or active-clamp forward converter; conducts high pulsed currents during duty-cycle transitions.

Use Value: 80 A I_DM pulse rating and 40 A I_AS avalanche current support robust operation during line transients and startup surges.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 30 V MOSFET with Schottky diode applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si7446DP-T1-GE3	R_DS(on) = 4.5 mΩ @ 10 V; Q_g = 24.5 nC; same PowerPAK SO-8 package and pinout.	Slightly higher conduction loss and gate drive requirement; otherwise identical thermal and layout compatibility.	Select when marginally higher R_DS(on) is acceptable for cost optimization or second-source assurance.
Si7772DP-T1-GE3	R_DS(on) = 3.3 mΩ @ 10 V; Q_g = 23.5 nC; same package, but higher current capability (65 A).	Lower on-resistance improves efficiency at high load; slightly higher gate charge increases driver loss at very high frequency.	Prefer for next-gen server VRMs targeting >95 % efficiency at full load, where thermal headroom allows tighter R_DS(on) trade-off.

Compared with Si7446DP-T1-GE3, SI7774DP-T1-GE3 offers 0.7 mΩ lower R_DS(on) for better full-load efficiency; compared with Si7772DP-T1-GE3, it trades 0.5 mΩ higher R_DS(on) for 2 nC lower Q_g, favoring high-frequency, medium-load operation in thermally constrained notebooks.

Availability

SI7774DP-T1-GE3 is available at Aetrix Electronics and suitable for server VRM, notebook POL, and telecom power supply designs requiring stable component supply, long-lifecycle support, and consistent parametric performance across production batches.

Supply support for SI7774DP-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency, reliability, and miniaturization.

The SI7774DP-T1-GE3 belongs to Vishay's SkyFET® PowerPAK® SO-8 family, engineered specifically for high-current, high-frequency point-of-load conversion in space- and thermally-constrained computing and communications infrastructure.

FAQ

What is the maximum continuous drain current rating for SI7774DP-T1-GE3 at 70 °C case temperature?

The SI7774DP-T1-GE3 is rated for 60 A continuous drain current at T_C = 70 °C, as specified in its Absolute Maximum Ratings table. This rating is package-limited and assumes proper PCB thermal design with adequate copper area on the drain pads. Derating applies above 70 °C case temperature per the current derating curve in the datasheet.

Does SI7774DP-T1-GE3 support 4.5 V logic-level gate drive in practical applications?

Yes, SI7774DP-T1-GE3 is fully characterized for 4.5 V gate drive, with R_DS(on) = 4.7 mΩ (max) at I_D = 10 A and V_GS = 4.5 V. Its V_GS(th) range of 1.0–2.2 V ensures reliable turn-on with standard 4.5 V PWM controllers, making it suitable for 5 V and 3.3 V logic-compatible systems without level-shifting.

How does the integrated Schottky diode in SI7774DP-T1-GE3 improve performance versus a discrete MOSFET + diode solution?

The monolithically integrated Schottky diode in SI7774DP-T1-GE3 provides matched thermal tracking, reduced parasitic inductance, and guaranteed V_SD = 0.45–0.6 V at 5 A. This eliminates layout-dependent reverse-recovery spikes and enables faster, cleaner dead-time conduction - improving efficiency by up to 1.2 % and reducing EMI filter complexity compared to discrete solutions.

Is SI7774DP-T1-GE3 pin-compatible with standard SO-8 MOSFETs?

Yes, SI7774DP-T1-GE3 uses the PowerPAK® SO-8 package with identical pinout, footprint, and land pattern compatibility to standard SO-8 devices. Its leadless construction places drain, source, and gate terminals in the same positions (1=G, 2=S, 3–6=D, 7–8=S), enabling direct replacement without PCB modification.

What thermal performance advantage does SI7774DP-T1-GE3 offer over traditional SO-8 MOSFETs?

SI7774DP-T1-GE3 delivers R_thJC = 2.1 °C/W (typ.), matching DPAK performance while retaining SO-8 footprint. In contrast, standard SO-8 packages exhibit ~16 °C/W R_thJC. This 7.6× improvement reduces junction-to-board temperature rise by ~40 °C at 2.7 W dissipation - preserving R_DS(on) stability and enabling higher current density in thermally constrained designs.

SI7774DP-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: SkyFET®, TrenchFET®

Package/Case:: PowerPAK® SO-8

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 60A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 3.8mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:: 2.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 66 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2630 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 5W (Ta), 48W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® SO-8

SI7774DP-T1-GE3 FAQ

1.How can I place an order for SI7774DP-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI7774DP-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI7774DP-T1-GE3 reliable?

The price and inventory of SI7774DP-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI7774DP-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SI7774DP-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI7774DP-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI7774DP-T1-GE3?

SI7774DP-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI7774DP-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI7774DP-T1-GE3?

For technical support, including SI7774DP-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI7774DP-T1-GE3 requirements.

6.How does Aetrix verify that SI7774DP-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SI7774DP-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI7774DP-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SI7774DP-T1-GE3?

All SI7774DP-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI7774DP-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI7774DP-T1-GE3 part is unused and in its original packaging.

Return procedure for SI7774DP-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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