My Inquiry
My Account
Vishay Siliconix SI7790DP-T1-GE3
- Part No.:
- SI7790DP-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SI7790DP-T1-GE3.pdf
- Description:
- MOSFET N-CH 40V 50A PPAK SO-8
- Quantity:
- Payment:
- Shipping:
Inventory:2,387
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SI7790DP-T1-GE3 from Vishay Siliconix is an N-channel 40-V TrenchFET® Power MOSFET in PowerPAK SO-8 package, delivering 50 A continuous drain current at TC = 25 °C, RDS(on) of 4.5 mΩ at VGS = 10 V, and 6 mΩ at VGS = 4.5 V, optimized for high-efficiency DC/DC converter primary-side switching.
For engineers reviewing the SI7790DP-T1-GE3 datasheet, SI7790DP-T1-GE3 pinout, SI7790DP-T1-GE3 application, or SI7790DP-T1-GE3 equivalent, key selection criteria include its low RDS(on), 29 nC total gate charge at 4.5 V drive, 1.2 °C/W junction-to-case thermal resistance, and compatibility with standard SO-8 PCB footprints while offering DPAK-level thermal performance.
Technical Context
This MOSFET employs trench-gate silicon technology to achieve low on-resistance and fast switching with controlled Qg/Qgd ratio. Its gate threshold voltage (1.2–2.5 V) enables robust 4.5 V logic-level drive, and it features 100 % Rg and UIS testing for production reliability.
The device integrates a source-drain body diode with 0.72–1.1 V forward voltage at 3 A and 31–50 ns reverse recovery time, supporting synchronous rectification and freewheeling in buck and half-bridge topologies without external diode supplementation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS (Max) | 40 V - Supports input rails up to 36 V nominal in industrial and telecom DC/DC converters. |
| RDS(on) @ 10 V | 4.5 mΩ - Enables <1.5 W conduction loss at 15 A, critical for high-current POL stages. |
| RDS(on) @ 4.5 V | 6.0 mΩ - Ensures full enhancement with 5 V or 4.5 V gate drivers, eliminating level-shifting needs. |
| Qg (Typ) | 29 nC @ 4.5 V - Reduces gate drive power and switching losses in high-frequency (>500 kHz) operation. |
| ID (Cont) @ TC=25°C | 50 A - Package-limited current rating suitable for high-power density board-mounted converters. |
| RthJC | 1.2 °C/W - Enables direct thermal coupling to copper planes, achieving DPAK-equivalent cooling in SO-8 footprint. |
| VGS(th) | 1.2–2.5 V - Provides noise-immune turn-on margin with typical 1.8 V threshold, minimizing shoot-through risk. |
Pinout & Package
PowerPAK SO-8 is a leadless surface-mount package with exposed drain paddle on bottom, identical 5.15 mm × 6.15 mm footprint and pinout to standard SO-8, enabling drop-in replacement without PCB redesign. The package uses copper substrate for low-inductance, high-current routing and enhanced thermal dissipation via bottom-side solder joint.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 | Source | Common source connection for internal parallel die; low-inductance return path for high di/dt currents. |
| 5, 6, 7, 8 | Drain | Exposed copper drain paddle (pins 5–8 + bottom pad); primary heat transfer path to PCB copper. |
| 3 | Gate | Single gate terminal (pin 3 only); isolated control node with 0.2–2.0 Ω gate resistance for EMI-controlled turn-on/off. |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® Technology | Enables 4.5 mΩ RDS(on) in SO-8 footprint-2× lower than conventional SO-8 MOSFETs at same voltage rating. |
| 100 % Rg Tested | Guarantees gate resistance ≤2.0 Ω, ensuring predictable turn-on delay and consistent switching timing across production lots. |
| 100 % UIS Tested | Validates ruggedness against unclamped inductive switching events up to 80 mJ avalanche energy, critical for hard-switched converters. |
| Halogen-free & Pb-free | Meets RoHS Directive 2011/65/EU and JEDEC J-STD-020 moisture sensitivity level 1 (MSL1), enabling no-bake assembly. |
| PowerPAK SO-8 Footprint | Direct replacement for SO-8 MOSFETs; eliminates layout changes while improving thermal resistance by 85 % vs. standard SO-8. |
Applications
| Server VRM | Industrial DC/DC Converter |
|---|---|
Use Scenario: Primary-side high-side switch in 48 V–12 V buck converter for CPU core power delivery. IC Role / Device Role / Timing Role: High-current, high-frequency (600–1000 kHz) synchronous rectifier switch with tight duty-cycle control. Use Value: 4.5 mΩ RDS(on) reduces conduction loss by >35 % vs. legacy SO-8 alternatives, enabling 95 %+ efficiency at 100 A output. | Use Scenario: Input-side switch in isolated 24 V–5 V flyback or active clamp forward converter for PLC I/O modules. IC Role / Device Role / Timing Role: Main power switch handling repetitive 40 V, 20 A pulses with 50 ns turn-off delay. Use Value: 1.2 °C/W RthJC allows direct mounting to 2 oz copper plane, limiting junction rise to <15 °C above board temp at 3 W dissipation. |
| Telecom Rectifier | Automotive ADAS Power Supply |
Use Scenario: OR-ing FET in redundant 54 V telecom rectifier module with hot-swap capability. IC Role / Device Role / Timing Role: Low-VF, low-RDS(on) pass element controlling current flow direction and fault isolation. Use Value: Body diode VSD = 0.72 V at 3 A and trr = 31 ns minimize reverse recovery loss during load dump transients. | Use Scenario: High-side switch in 12 V–3.3 V buck converter powering radar sensor SoC in automotive ADAS domain controller. IC Role / Device Role / Timing Role: AEC-Q101 stress-qualified power switch operating continuously at TJ = 125 °C ambient. Use Value: RDS(on) drift <15 % from 25 °C to 125 °C ensures stable current sharing and thermal runaway immunity in compact enclosures. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 40-V power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si7850DP-T1-GE3 | RDS(on) = 3.3 mΩ @ 10 V; higher Qg (42 nC @ 4.5 V); same PowerPAK SO-8 package. | Better conduction loss but higher gate drive demand; suited for <300 kHz fixed-frequency designs. | Choose Si7850DP-T1-GE3 when lowest possible RDS(on) outweighs gate drive complexity and cost. |
| IRF7470PBF | Standard SO-8 package; RDS(on) = 5.5 mΩ @ 10 V; RthJA = 62 °C/W (vs. 24 °C/W for SI7790DP-T1-GE3). | Limited thermal headroom; requires larger heatsink or derating below 30 A continuous. | Choose IRF7470PBF only if legacy SO-8 layout reuse is mandatory and power density is secondary. |
Compared with SI7790DP-T1-GE3, Si7850DP-T1-GE3 offers lower conduction loss but demands more gate drive energy, while IRF7470PBF sacrifices thermal performance and current capability to retain legacy packaging-making SI7790DP-T1-GE3 the optimal balance of efficiency, thermal management, and design flexibility for new 40 V power stages.
Availability
SI7790DP-T1-GE3 is available at Aetrix Electronics and suitable for server VRMs, industrial DC/DC converters, and telecom rectifiers requiring stable component supply, high-reliability MOSFETs with halogen-free compliance and MSL1 handling.
Supply support for SI7790DP-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.
The Si7790DP product line delivers trench-based 40 V N-channel MOSFETs in PowerPAK SO-8 for high-current, high-frequency DC/DC conversion in space-constrained infrastructure and computing applications.
FAQ
What is the maximum continuous drain current rating for SI7790DP-T1-GE3 at 70 °C case temperature?
The SI7790DP-T1-GE3 supports 50 A continuous drain current at TC = 70 °C per Vishay's Absolute Maximum Ratings table. This rating is package-limited and applies under steady-state conditions with proper PCB thermal management using the exposed drain paddle.
Does SI7790DP-T1-GE3 require a gate resistor for reliable operation in a 500 kHz buck converter?
Yes, SI7790DP-T1-GE3 benefits from an external gate resistor (typically 1–5 Ω) to control dV/dt and reduce EMI. Its intrinsic gate resistance is 0.2–2.0 Ω, but adding series resistance dampens ringing caused by PCB trace inductance and improves switching waveform stability at 500 kHz.
Is SI7790DP-T1-GE3 qualified for automotive applications per AEC-Q101?
No, SI7790DP-T1-GE3 is not AEC-Q101 qualified. It is rated for industrial temperature range (–55 °C to +150 °C) and intended for computing, telecom, and industrial power supplies-not automotive safety-critical systems. For AEC-Q101, consider Vishay's SQ-series equivalents.
Can SI7790DP-T1-GE3 be mounted on a standard SO-8 land pattern without thermal penalty?
SI7790DP-T1-GE3 can be mounted on a standard SO-8 land pattern, but thermal performance degrades: RthJA increases from 24 °C/W (optimized layout) to ~65 °C/W. Full thermal benefit requires extended drain copper area per Vishay Application Note AN821 and recommended pad patterns in AN826.
What is the body diode forward voltage of SI7790DP-T1-GE3 at 3 A and 25 °C?
The body diode forward voltage (VSD) of SI7790DP-T1-GE3 is specified as 0.72 V (typical) to 1.1 V (max) at IS = 3 A and TJ = 25 °C. This low VSD supports efficient freewheeling in non-synchronous topologies and reduces reverse recovery losses during commutation.
SI7790DP-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 40 V
- Current - Continuous Drain (Id) @ 25°C:
- 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 4.5mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 95 nC @ 10 V
- Vgs (Max):
- ±25V
- Input Capacitance (Ciss) (Max) @ Vds:
- 4200 pF @ 20 V
- FET Feature:
- -
- Power Dissipation (Max):
- 5.2W (Ta), 69W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8
SI7790DP-T1-GE3 FAQ
1.How can I place an order for SI7790DP-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI7790DP-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI7790DP-T1-GE3 reliable?
The price and inventory of SI7790DP-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI7790DP-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SI7790DP-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI7790DP-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI7790DP-T1-GE3?
SI7790DP-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI7790DP-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI7790DP-T1-GE3?
For technical support, including SI7790DP-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI7790DP-T1-GE3 requirements.
6.How does Aetrix verify that SI7790DP-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SI7790DP-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI7790DP-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SI7790DP-T1-GE3?
All SI7790DP-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI7790DP-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI7790DP-T1-GE3 part is unused and in its original packaging.
Return procedure for SI7790DP-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SI7790DP-T1-GE3 Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
