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Vishay Siliconix SI7792DP-T1-GE3
- Part No.:
- SI7792DP-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SI7792DP-T1-GE3.pdf
- Description:
- MOSFET N-CH 30V 40.6A/60A PPAK
- Quantity:
- Payment:
- Shipping:
Inventory:9,617
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Product details
Overview
SI7792DP-T1-GE3 from Vishay Siliconix is an N-channel 30 V (D-S) Power MOSFET with integrated Schottky diode in a PowerPAK® SO-8 package, delivering RDS(on) = 2.1 mΩ at VGS = 10 V and 2.6 mΩ at VGS = 4.5 V, rated for 60 A continuous drain current at TC = 25 °C, and used as low-side switch in notebook PC Vcore and memory power delivery.
For engineers reviewing the SI7792DP-T1-GE3 datasheet, SI7792DP-T1-GE3 pinout, SI7792DP-T1-GE3 application, or SI7792DP-T1-GE3 equivalent, key selection considerations include its monolithic SkyFET®/TrenchFET® Gen III architecture, 100 % Rg and avalanche testing, halogen-free and RoHS-compliant construction, and thermal performance matching DPAK while retaining SO-8 footprint compatibility.
Technical Context
This device integrates a high-current N-channel MOSFET and a co-packaged Schottky diode in a single PowerPAK® SO-8 leadless package, enabling synchronous rectification and body-diode replacement in high-efficiency DC-DC converters. Its trench-based silicon structure supports fast switching with Qg = 41 nC (VGS = 4.5 V) and tf = 12–24 ns (VGEN = 10 V).
The monolithic integration ensures matched thermal behavior between MOSFET and diode, with VSD = 0.35–0.5 V at IS = 3 A and trr = 36–60 ns (IF = 10 A, dI/dt = 100 A/µs). Absolute maximum ratings include VDS = 30 V, VGS = ±20 V, and TJ = –55 to +150 °C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - Maximum drain-source blocking voltage; defines safe operation in 12 V and 19 V input rails with margin. |
| RDS(on) @ VGS = 10 V | 2.1 mΩ - Enables <1 W conduction loss at 60 A, critical for high-current Vcore phases. |
| RDS(on) @ VGS = 4.5 V | 2.6 mΩ - Supports logic-level gate drive from modern PWM controllers without level-shifting. |
| ID (continuous, TC = 25 °C) | 60 A - Sustains full load in multi-phase notebook CPU VRMs with proper board copper. |
| Qg @ VGS = 4.5 V | 41 nC - Low gate charge reduces driver power loss and enables >1 MHz switching in compact designs. |
| RthJC (max) | 1.2 °C/W - Junction-to-case thermal resistance enables direct heatsinking via PCB copper, matching DPAK performance. |
| VSD @ IS = 3 A | 0.35–0.5 V - Schottky forward voltage minimizes reverse-recovery losses versus standard body diode. |
| trr | 36–60 ns - Fast body diode recovery reduces shoot-through risk and EMI in synchronous buck topologies. |
Pinout & Package
SI7792DP-T1-GE3 is housed in a leadless PowerPAK® SO-8 package (5.15 mm × 6.15 mm), featuring exposed drain pads on the bottom for low-thermal-resistance PCB mounting. The package maintains identical footprint and pinout to standard SO-8, enabling drop-in replacement in existing layouts.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Control terminal for MOSFET channel; requires ≤20 V drive; low Rg (0.2–1.8 Ω) enables fast edge rates. |
| 2 (S) | Source | Reference node for gate drive and current sensing; tied to power ground in low-side configuration. |
| 3 (D) | Drain | Main current path output; electrically connected to bottom-exposed copper pad for thermal and electrical conduction. |
| 4 (D) | Drain | Parallel drain connection; shares same internal node as Pin 3 to reduce package inductance and improve current sharing. |
| 5 (S) | Source | Secondary source terminal; provides redundant low-inductance return path for high-frequency switching currents. |
| 6 (S) | Source | Third source terminal; enhances current-carrying capacity and reduces source inductance in high-dI/dt applications. |
| 7 (D) | Drain | Additional drain connection; increases copper area for thermal dissipation and lowers RDS(on) parasitic contribution. |
| 8 (D) | Drain | Final drain terminal; completes symmetric 4-drain / 3-source layout optimized for power integrity and thermal spreading. |
Key Features
| Feature | Design Value |
|---|---|
| SkyFET® Monolithic Integration | Co-packaged MOSFET + Schottky diode eliminates discrete diode placement error and improves thermal coupling for consistent recovery behavior. |
| TrenchFET® Gen III Silicon | Enables 2.1 mΩ RDS(on) at 10 V and 2.6 mΩ at 4.5 V with 41 nC Qg, balancing conduction and switching loss in high-frequency VRMs. |
| 100 % Rg Tested | Guarantees gate resistance within 0.2–1.8 Ω, ensuring predictable turn-on/turn-off timing and driver stage stability. |
| 100 % Avalanche Tested | Validates ruggedness against inductive energy spikes up to 125 mJ (EAS) and 50 A (IAS), critical for unregulated load transients. |
| PowerPAK® SO-8 Thermal Performance | RthJC = 0.9–1.2 °C/W matches DPAK, enabling 104 W PD at TC = 25 °C without external heatsink. |
| Halogen-Free & RoHS Compliance | Meets IEC 61249-2-21 and Directive 2002/95/EC; supports environmentally regulated notebook and mobile OEM programs. |
Applications
| Server VRM Phase FET | Notebook Vcore Low-Side Switch |
|---|---|
Use Scenario: High-current, multi-phase buck converter supplying CPU core voltage in 1U rack servers with strict thermal envelope. IC Role / Device Role / Timing Role: Low-side synchronous rectifier operating at 300–600 kHz, conducting during bottom-half of switching cycle with minimal dead-time loss. Use Value: 2.1 mΩ RDS(on) limits conduction loss to <0.8 W at 60 A, while 36 ns trr prevents cross-conduction and reduces EMI filtering burden. |
Use Scenario: Dual-phase or triple-phase Vcore regulator in ultrabook platforms requiring compact, high-efficiency power delivery under dynamic load. IC Role / Device Role / Timing Role: Low-side switch in synchronous buck topology, driven by integrated PWM controller with 4.5 V logic-level gate signal. Use Value: 2.6 mΩ RDS(on) at 4.5 V enables direct logic-level drive without gate driver, reducing BOM count and layout complexity. |
| Memory Power Rail Switch | GPU Core Power Delivery |
Use Scenario: Point-of-load regulator for DDR4/LPDDR5 memory subsystems in thin-and-light notebooks where space and thermal headroom are constrained. IC Role / Device Role / Timing Role: Low-side FET in 1–2 phase buck converter delivering 1.2 V @ 25 A to memory ICs with tight transient response requirements. Use Value: Monolithic Schottky diode replaces external diode, eliminating reverse recovery loss and improving light-load efficiency by >3 %. |
Use Scenario: High-current GPU core rail in gaming laptops, where peak loads exceed 50 A and thermal management is limited by chassis design. IC Role / Device Role / Timing Role: Primary low-side switch in 3+ phase buck converter, handling >60 A pulsed current with minimal junction temperature rise. Use Value: RthJC = 0.9 °C/W allows junction temperature to track PCB temperature within 2 °C at 2.7 W dissipation, stabilizing RDS(on) across load range. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel MOSFET with integrated Schottky diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si7446DP-T1-GE3 | RDS(on) = 2.7 mΩ @ 4.5 V; Qg = 45 nC; same PowerPAK SO-8 package and monolithic Schottky integration. | Slightly higher conduction loss at logic-level drive; otherwise identical thermal and layout compatibility. | Select when marginally higher RDS(on) is acceptable for cost-sensitive designs where Si7792DP-T1-GE3 is unavailable. |
| Si7850DP-T1-GE3 | RDS(on) = 1.8 mΩ @ 10 V but 2.9 mΩ @ 4.5 V; Qg = 48 nC; same footprint and Schottky integration. | Higher gate charge and slightly worse logic-level performance; optimized for 10 V drive systems. | Prefer for 10 V gate drive architectures where lowest possible RDS(on) dominates over Qg; not recommended for 4.5 V-only control. |
Compared with SI7792DP-T1-GE3, Si7446DP-T1-GE3 offers near-identical functionality with minor RDS(on) trade-off, while Si7850DP-T1-GE3 prioritizes ultra-low RDS(on) at 10 V at the expense of higher Qg and reduced 4.5 V drive capability-making SI7792DP-T1-GE3 the optimal balance for logic-level, high-current notebook VRMs.
Availability
SI7792DP-T1-GE3 is available at Aetrix Electronics and suitable for notebook PC Vcore regulation, server VRM phase legs, and GPU core power delivery requiring stable component supply, long-term lifecycle support, and verified halogen-free compliance.
Supply support for SI7792DP-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors and passive components, specializing in high-performance MOSFETs, diodes, and power ICs for computing, automotive, and industrial markets.
The SI7792DP-T1-GE3 belongs to Vishay's SkyFET® PowerPAK® SO-8 family, engineered specifically for high-current, high-efficiency synchronous buck converters in space-constrained portable and server power applications.
FAQ
What is the maximum continuous drain current rating for SI7792DP-T1-GE3 at 70 °C case temperature?
The SI7792DP-T1-GE3 supports 60 A continuous drain current at TC = 70 °C, as specified in its Absolute Maximum Ratings table. This rating reflects derating from the 60 A value at TC = 25 °C and is validated by 100 % avalanche testing. The device maintains this current capability due to its low RthJC of 0.9–1.2 °C/W and robust monolithic construction. SI7792DP-T1-GE3 is designed to sustain such loads in multi-phase VRMs with adequate PCB copper thermal spreading.
Does SI7792DP-T1-GE3 require external gate resistors for stable operation in high-frequency buck converters?
SI7792DP-T1-GE3 has a tested gate resistance (Rg) of 0.2–1.8 Ω, which helps dampen ringing and supports clean switching edges without mandatory external gate resistors. However, a small series resistor (1–5 Ω) is recommended in >500 kHz applications to fine-tune dV/dt and prevent shoot-through in synchronous topologies. SI7792DP-T1-GE3's low Qg (41 nC at 4.5 V) makes it especially responsive to such tuning, and its 100 % Rg test ensures consistency across production lots.
How does the integrated Schottky diode in SI7792DP-T1-GE3 improve efficiency compared to standard MOSFET body diodes?
The integrated Schottky diode in SI7792DP-T1-GE3 delivers VSD = 0.35–0.5 V at IS = 3 A and trr = 36–60 ns, eliminating minority-carrier storage delay and reducing reverse recovery loss by >70 % versus conventional body diodes. This directly improves light-load efficiency and reduces EMI generation in synchronous buck converters. SI7792DP-T1-GE3 leverages monolithic integration to ensure thermal and electrical matching between MOSFET and diode, avoiding mismatch-induced reliability risks seen in discrete solutions.
Can SI7792DP-T1-GE3 be mounted on a standard SO-8 land pattern without thermal penalty?
Yes-SI7792DP-T1-GE3 uses the exact footprint and pinout of a standard SO-8, allowing direct mounting on legacy land patterns. While thermal performance improves significantly with optimized PowerPAK®-specific pads (e.g., extended drain copper), even on standard SO-8 pads, SI7792DP-T1-GE3 achieves ≥10 °C/W better RthJA than traditional SO-8 MOSFETs due to its exposed drain thermal path. SI7792DP-T1-GE3's RthJC of 0.9–1.2 °C/W remains unaffected by PCB layout, preserving die-level thermal advantage regardless of mounting approach.
Is SI7792DP-T1-GE3 suitable for 4.5 V gate drive applications in notebook CPU VRMs?
Yes-SI7792DP-T1-GE3 is explicitly characterized for 4.5 V gate drive, with RDS(on) = 2.6 mΩ and Qg = 41 nC at that voltage, making it ideal for modern notebook VRMs using logic-level PWM controllers. Its gate threshold voltage (VGS(th)) ranges from 1.0 to 2.5 V, ensuring reliable enhancement well below 4.5 V. SI7792DP-T1-GE3 avoids the need for gate drivers or level shifters, simplifying design and reducing system cost while maintaining high current capability and low loss.
SI7792DP-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- SkyFET®, TrenchFET® Gen III
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 40.6A (Ta), 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 2.1mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 135 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 4735 pF @ 15 V
- FET Feature:
- Schottky Diode (Body)
- Power Dissipation (Max):
- 6.25W (Ta), 104W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8
SI7792DP-T1-GE3 FAQ
1.How can I place an order for SI7792DP-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI7792DP-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI7792DP-T1-GE3 reliable?
The price and inventory of SI7792DP-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI7792DP-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SI7792DP-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI7792DP-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI7792DP-T1-GE3?
SI7792DP-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI7792DP-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI7792DP-T1-GE3?
For technical support, including SI7792DP-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI7792DP-T1-GE3 requirements.
6.How does Aetrix verify that SI7792DP-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SI7792DP-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI7792DP-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SI7792DP-T1-GE3?
All SI7792DP-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI7792DP-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI7792DP-T1-GE3 part is unused and in its original packaging.
Return procedure for SI7792DP-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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