My Inquiry
My Account
Vishay Siliconix SI7848DP-T1-E3
- Part No.:
- SI7848DP-T1-E3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SI7848DP-T1-E3.pdf
- Description:
- MOSFET N-CH 40V 10.4A PPAK SO-8
- Quantity:
- Payment:
- Shipping:
Inventory:9,130
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SI7848DP-T1-E3 from Vishay Siliconix is an N-channel 40-V (D-S) TrenchFET® Power MOSFET in a PowerPAK® SO-8 package, featuring rDS(on) = 0.009 Ω at VGS = 10 V, ID = 17 A continuous, and optimized for PWM-driven synchronous buck converters and synchronous rectification. It delivers low thermal resistance and fast switching performance in DC/DC power stages.
For engineers reviewing the SI7848DP-T1-E3 datasheet, SI7848DP-T1-E3 pinout, SI7848DP-T1-E3 application, or SI7848DP-T1-E3 equivalent, key selection criteria include its 40-V VDS rating, 0.009 Ω on-resistance at 10 V gate drive, 1.07-mm low-profile PowerPAK SO-8 footprint, 18.5–28 nC total gate charge, and suitability for high-efficiency, space-constrained power conversion designs.
Technical Context
This MOSFET employs trench-gate silicon technology to achieve low rDS(on) and high transconductance (gfs = 50 S), enabling efficient conduction and rapid voltage-controlled switching in high-frequency DC/DC topologies. Its gate threshold voltage (VGS(th) = 1.0–3.0 V) supports standard logic-level and 5-V gate drivers.
The device integrates a body diode with VSD = 0.75–1.1 V at IS = 2.8 A and exhibits trr = 30–60 ns, making it suitable for synchronous rectification where reverse recovery behavior directly impacts efficiency and EMI.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 40 V - Maximum drain-source blocking voltage for 12 V and 24 V input DC/DC systems |
| rDS(on) | 0.009 Ω @ VGS = 10 V, ID = 14 A - Enables <1 W conduction loss at 15 A output current |
| ID (continuous) | 17 A @ TA = 25 °C - Supports high-current power stage designs on standard FR4 PCBs |
| Qg | 18.5–28 nC - Determines gate driver strength requirement and switching loss trade-off |
| RthJA | 55 °C/W (steady state) - Defines thermal derating above ambient; requires heatsinking above ~4 W dissipation |
| VGS(th) | 1.0–3.0 V - Ensures reliable turn-on with 3.3 V or 5 V microcontroller GPIO or dedicated gate drivers |
| trr | 30–60 ns - Critical for minimizing shoot-through risk and EMI in synchronous rectifier operation |
Pinout & Package
Package: PowerPAK® SO-8 (leadless, 6.15 mm × 5.15 mm, 1.07 mm height), bottom-terminal configuration with exposed drain pads for enhanced thermal performance.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 | Source (S) | Common source connection; electrically tied internally; used for return path and thermal sinking |
| 5, 6, 7, 8 | Drain (D) | Power output node; connected to internal die backside; primary thermal path to PCB copper |
| Gate (G) | Control terminal | Single-pin gate input (Pin 4 in standard SO-8 mapping); drives channel conduction via VGS |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® technology | Enables ultra-low rDS(on) and high cell density in compact PowerPAK SO-8 footprint |
| PWM-optimized switching | Low Qgd/Qg ratio and 10–40 ns transition times reduce switching losses in 300 kHz–1 MHz converters |
| 100 % Rg tested | Guarantees gate resistance between 0.1–1.1 Ω, improving gate drive predictability and layout robustness |
| Low-profile PowerPAK® | 1.07-mm height enables use in ultra-thin power modules and stacked PCB assemblies |
Applications
| Synchronous Buck Converter | Synchronous Rectifier |
|---|---|
Use Scenario: High-efficiency step-down regulator for FPGA core voltage (e.g., 12 V → 0.85 V @ 20 A). IC Role / Device Role / Timing Role: High-side or low-side switch controlled by PWM controller; operates in hard-switched mode at 500 kHz. Use Value: 0.009 Ω rDS(on) reduces I²R loss to ~2.5 W at 17 A, enabling >92 % efficiency without forced airflow. | Use Scenario: Secondary-side rectification in isolated 48 V → 12 V telecom DC/DC brick. IC Role / Device Role / Timing Role: Synchronously gated replacement for Schottky diode; driven by transformer-coupled or controller-synchronized signal. Use Value: Body diode trr ≤ 60 ns and low VSD minimize reverse recovery loss and voltage overshoot during commutation. |
| Point-of-Load Regulator | Motor Drive Half-Bridge |
Use Scenario: Compact 5 V → 3.3 V regulator on server motherboard delivering up to 15 A to memory subsystems. IC Role / Device Role / Timing Role: Low-side switch in integrated POL module; thermally coupled to copper plane via exposed drain terminals. Use Value: RthJC = 1.8–2.2 °C/W allows direct thermal transfer to inner-layer ground planes, limiting ΔT to <35 °C at 10 W dissipation. | Use Scenario: 24 V BLDC motor control in industrial actuator with 10 A peak phase current. IC Role / Device Role / Timing Role: Low-side switch in half-bridge leg; switched at ≤ 20 kHz with dead-time control. Use Value: Avalanche-rated IAS = 30 A ensures ruggedness against inductive kickback during fault conditions. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF7842PBF | rDS(on) = 0.0075 Ω @ 10 V (lower), but RthJA = 62 °C/W (higher); same PowerSO-8 package | Better conduction loss, slightly worse thermal performance on 1"×1" board | Prefer IRF7842PBF when gate drive is ≥10 V and board area allows marginally higher junction temperature |
| Si7850DP-T1-E3 | 40 V VDS, rDS(on) = 0.0065 Ω @ 10 V, but ID = 20 A; identical PowerPAK SO-8 footprint and pinout | Higher current rating and lower on-resistance; drop-in upgrade path with no layout change | Choose Si7850DP-T1-E3 for new designs requiring headroom beyond 17 A or <0.007 Ω conduction loss |
Compared with IRF7842PBF and Si7850DP-T1-E3, the SI7848DP-T1-E3 offers balanced conduction and switching performance in a proven low-profile package, making it optimal for cost-sensitive, thermally constrained 15–17 A DC/DC applications where 0.009 Ω rDS(on) meets efficiency targets without over-specifying.
Availability
SI7848DP-T1-E3 is available at Aetrix Electronics and suitable for synchronous buck converters, point-of-load regulators, and motor drive half-bridges requiring stable component supply, RoHS-compliant lead-free assembly, and consistent PowerPAK SO-8 sourcing.
Supply support for SI7848DP-T1-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on high-reliability, high-efficiency, and thermally optimized packaging.
The SI7848DP-T1-E3 belongs to Vishay's TrenchFET® PowerPAK® SO-8 family, engineered specifically for high-density, high-frequency DC/DC conversion in computing, telecom, and industrial power supplies.
FAQ
What is the maximum continuous drain current for SI7848DP-T1-E3 at 70 °C ambient?
The SI7848DP-T1-E3 supports 13.7 A continuous drain current at TA = 70 °C under standard surface-mount conditions on a 1" × 1" FR4 board. This rating reflects thermal derating due to increased RthJA at elevated ambient temperatures and must be validated against actual PCB layout and copper area in the final design. The SI7848DP-T1-E3 datasheet specifies this value in its Absolute Maximum Ratings table.
Is SI7848DP-T1-E3 suitable for 3.3 V gate drive applications?
Yes, the SI7848DP-T1-E3 has a gate threshold voltage range of 1.0–3.0 V, enabling turn-on with 3.3 V logic. However, its rDS(on) rises to 0.012 Ω at VGS = 4.5 V and ID = 12 A, so full 10 V drive is recommended for minimum conduction loss. The SI7848DP-T1-E3 remains functional but less efficient at 3.3 V gate bias.
Does SI7848DP-T1-E3 have avalanche capability, and what is its rated current?
Yes, the SI7848DP-T1-E3 is rated for unclamped inductive switching with IAS = 30 A (L = 0.1 mH). This avalanche rating ensures robustness against transient voltage spikes in motor drive and converter applications where energy stored in parasitic inductance must be safely absorbed. The SI7848DP-T1-E3 specification sheet confirms this in the Absolute Maximum Ratings section.
What is the thermal resistance from junction to case (RthJC) for SI7848DP-T1-E3?
The SI7848DP-T1-E3 has a maximum junction-to-case (drain) thermal resistance of 2.2 °C/W under steady-state conditions. This low RthJC enables efficient heat transfer from the silicon die to the PCB copper through the exposed drain terminals, supporting high-power operation when mounted on thermally enhanced layouts. The SI7848DP-T1-E3 datasheet lists this value in the Thermal Resistance Ratings table.
Can SI7848DP-T1-E3 replace Si7850DP-T1-E3 in an existing design?
No - while both share the PowerPAK SO-8 package and pinout, the SI7848DP-T1-E3 has higher rDS(on) (0.009 Ω vs. 0.0065 Ω) and lower ID rating (17 A vs. 20 A). Substituting SI7848DP-T1-E3 for Si7850DP-T1-E3 may cause thermal or efficiency degradation under full load. The SI7848DP-T1-E3 is not a drop-in replacement unless derated per its published specifications.
SI7848DP-T1-E3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 40 V
- Current - Continuous Drain (Id) @ 25°C:
- 10.4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 9mOhm @ 14A, 10V
- Vgs(th) (Max) @ Id:
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 28 nC @ 5 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- 1.83W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8
SI7848DP-T1-E3 FAQ
1.How can I place an order for SI7848DP-T1-E3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI7848DP-T1-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI7848DP-T1-E3 reliable?
The price and inventory of SI7848DP-T1-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI7848DP-T1-E3 is usually 5 days.
3.What payment methods are accepted for SI7848DP-T1-E3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI7848DP-T1-E3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI7848DP-T1-E3?
SI7848DP-T1-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI7848DP-T1-E3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI7848DP-T1-E3?
For technical support, including SI7848DP-T1-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI7848DP-T1-E3 requirements.
6.How does Aetrix verify that SI7848DP-T1-E3 is sourced from the original manufacturer or authorized distributors?
All SI7848DP-T1-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI7848DP-T1-E3 meets industry standards.
7.What is the process for return or replacement of SI7848DP-T1-E3?
All SI7848DP-T1-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SI7848DP-T1-E3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI7848DP-T1-E3 part is unused and in its original packaging.
Return procedure for SI7848DP-T1-E3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SI7848DP-T1-E3 Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
