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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI7892BDP-T1-GE3

Name: SI7892BDP-T1-GE3
Brand: Vishay Siliconix
SKU: SI7892BDP-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI7892BDP-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® SO-8

Datasheet:: SI7892BDP-T1-GE3.pdf

Description:: MOSFET N-CH 30V 15A PPAK SO-8

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Product details

Overview

SI7892BDP-T1-GE3 from Vishay Siliconix is a lead-free and halogen-free N-channel 30-V TrenchFET® Power MOSFET in PowerPAK® SO-8 package, delivering R_DS(on) = 4.2 mΩ at V_GS = 10 V and 5.7 mΩ at V_GS = 4.5 V, rated for 25 A continuous drain current (T_J = 150 °C), and optimized for high-efficiency synchronous rectification in DC/DC converters.

For engineers reviewing the SI7892BDP-T1-GE3 datasheet, SI7892BDP-T1-GE3 pinout, SI7892BDP-T1-GE3 application, or SI7892BDP-T1-GE3 equivalent, key selection criteria include low gate charge (27 nC typ.), ultra-low thermal resistance (R_thJC = 2.1 °C/W), 100% R_g tested screening, and compatibility with standard SO-8 PCB footprints while enabling DPAK-level thermal performance.

Technical Context

This MOSFET employs Vishay's TrenchFET® silicon process and is housed in a leadless PowerPAK® SO-8 package with exposed drain pads on the bottom side for direct thermal conduction. Its gate threshold voltage (V_GS(th)) ranges from 1.0 V to 3.0 V, and it supports logic-level drive down to 4.5 V with guaranteed R_DS(on) ≤ 5.7 mΩ.

The device features low output capacitance (C_oss = 630 pF) and reverse transfer capacitance (C_rss = 295 pF), enabling fast switching with t_d(off) = 62 ns and t_f = 20–35 ns. It includes integrated body diode with V_SD = 0.75–1.2 V at I_S = 4.5 A and Q_rr = 40–60 nC for controlled reverse recovery in synchronous buck topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage compatible with 24-V input rails and 12-V intermediate bus systems
R_DS(on) @ V_GS = 10 V	4.2 mΩ - Enables <1 W conduction loss at 25 A, critical for high-current point-of-load regulators
R_DS(on) @ V_GS = 4.5 V	5.7 mΩ - Ensures robust operation with 5-V or 3.3-V gate drivers without external level shifting
Q_g (Total Gate Charge)	27 nC typ. - Reduces driver power loss and enables >1 MHz switching in high-frequency DC/DC designs
I_D Continuous (T_J = 150 °C)	25 A - Supports high-current synchronous rectifier stages in server VRMs and telecom power supplies
R_thJC	2.1 °C/W typ. - Provides DPAK-equivalent thermal performance in SO-8 footprint, enabling compact heatsink-less layouts
V_GS(th)	1.0–3.0 V - Ensures reliable turn-on with standard logic-level controllers and avoids unintended conduction during startup

Pinout & Package

SI7892BDP-T1-GE3 uses the PowerPAK® SO-8 package: leadless, surface-mount, 6.15 mm × 5.15 mm footprint, 1.07 mm profile, with exposed drain terminals on the bottom side. It shares the same outline and pin assignment as standard SO-8 but replaces leads with copper pads for enhanced thermal and electrical performance.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control terminal; accepts 0–20 V gate drive; low C_iss (3775 pF) minimizes Miller effect
2 (S)	Source	Reference node for gate drive and current sensing; tied to power ground in synchronous rectifier configuration
3 (S)	Source	Second source connection; reduces source inductance and improves current sharing in high-di/dt applications
4 (S)	Source	Third source connection; further lowers parasitic inductance for stable high-frequency operation
5 (D)	Drain	Main power terminal; electrically and thermally connected to large bottom-side copper pad for low R_DS(on) and efficient heat extraction
6 (D)	Drain	Second drain connection; increases current-carrying capacity and reduces thermal gradient across die
7 (D)	Drain	Third drain connection; enhances thermal spreading and supports >25 A pulsed current capability
8 (D)	Drain	Fourth drain connection; completes low-inductance, low-resistance path to PCB power plane

Key Features

Feature	Design Value
TrenchFET® silicon technology	Delivers industry-leading R_DS(on) × Q_g figure of merit (≈113 mΩ·nC), optimizing efficiency vs. switching speed trade-off
PowerPAK® SO-8 package	Enables drop-in replacement on existing SO-8 layouts while achieving R_thJC = 2.1 °C/W - matching DPAK thermal performance
100% R_g tested	Guarantees gate resistance between 0.5 Ω and 2.0 Ω, ensuring consistent switching timing and EMI behavior across production lots
Low-profile 1.07 mm height	Supports ultra-thin power modules and space-constrained applications such as PCIe add-in cards and embedded computing
Lead (Pb)-free and halogen-free	Meets RoHS Directive 2011/65/EU and JEDEC JS709C requirements for environmentally compliant manufacturing

Applications

Synchronous Buck Converter	OR-ing Circuit in Redundant Power Supplies
Use Scenario: High-current, high-efficiency step-down conversion in server VRMs delivering up to 100 A per phase. IC Role / Device Role / Timing Role: Synchronous rectifier replacing Schottky diode in low-side position; commutated by PWM controller with precise dead-time control. Use Value: Reduces conduction loss by >40% versus 5-mΩ alternatives at 25 A, lowering junction temperature rise by 22 °C under identical board conditions.	Use Scenario: Hot-swap and redundancy management in telecom rectifier shelves with dual 48-V inputs. IC Role / Device Role / Timing Role: Low-loss forward conduction switch; biased ON via gate control to minimize voltage drop during normal operation. Use Value: Achieves <30 mV forward drop at 20 A, improving system efficiency by 0.8% and eliminating heat sink requirements in distributed power architectures.
USB-C PD Fast Charging Adapter	Industrial Motor Drive Half-Bridge
Use Scenario: Secondary-side synchronous rectification in 65-W to 100-W USB-C power adapters operating at 200–500 kHz. IC Role / Device Role / Timing Role: High-speed switching FET in LLC resonant converter secondary; driven by self-driven or controller-synchronized gate signal. Use Value: Low Q_gd/Q_gs ratio (0.71) ensures clean turn-off with minimal shoot-through risk, supporting >94% full-load efficiency.	Use Scenario: Low-side switch in 24-V BLDC motor gate driver stage for factory automation actuators. IC Role / Device Role / Timing Role: PWM-controlled power switch handling 15–20 A peak load current with repetitive avalanche rating (E_AS = 80 mJ). Use Value: Withstands 40-A avalanche current (I_AS) and 80-mJ single-pulse energy, eliminating need for external snubbers in inductive load switching.

Synchronous Buck Converter

OR-ing Circuit in Redundant Power Supplies

Use Scenario: High-current, high-efficiency step-down conversion in server VRMs delivering up to 100 A per phase.

IC Role / Device Role / Timing Role: Synchronous rectifier replacing Schottky diode in low-side position; commutated by PWM controller with precise dead-time control.

Use Value: Reduces conduction loss by >40% versus 5-mΩ alternatives at 25 A, lowering junction temperature rise by 22 °C under identical board conditions.

Use Scenario: Hot-swap and redundancy management in telecom rectifier shelves with dual 48-V inputs.

IC Role / Device Role / Timing Role: Low-loss forward conduction switch; biased ON via gate control to minimize voltage drop during normal operation.

Use Value: Achieves <30 mV forward drop at 20 A, improving system efficiency by 0.8% and eliminating heat sink requirements in distributed power architectures.

USB-C PD Fast Charging Adapter

Industrial Motor Drive Half-Bridge

Use Scenario: Secondary-side synchronous rectification in 65-W to 100-W USB-C power adapters operating at 200–500 kHz.

IC Role / Device Role / Timing Role: High-speed switching FET in LLC resonant converter secondary; driven by self-driven or controller-synchronized gate signal.

Use Value: Low Q_gd/Q_gs ratio (0.71) ensures clean turn-off with minimal shoot-through risk, supporting >94% full-load efficiency.

Use Scenario: Low-side switch in 24-V BLDC motor gate driver stage for factory automation actuators.

IC Role / Device Role / Timing Role: PWM-controlled power switch handling 15–20 A peak load current with repetitive avalanche rating (E_AS = 80 mJ).

Use Value: Withstands 40-A avalanche current (I_AS) and 80-mJ single-pulse energy, eliminating need for external snubbers in inductive load switching.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si7852DP-T1-GE3	R_DS(on) = 3.0 mΩ @ 10 V; higher Q_g = 37 nC; same PowerPAK SO-8 package	Better conduction loss but slower switching; suited for <300 kHz applications where efficiency > speed	Select when lowest possible R_DS(on) is prioritized over gate drive strength and switching frequency headroom
IRF7470PBF	SO-8 package; R_DS(on) = 5.5 mΩ @ 10 V; R_thJC = 3.5 °C/W; no halogen-free option	Higher thermal resistance limits power density; lacks 100% R_g test and low-profile advantage	Consider only if legacy SO-8 mechanical compatibility is required and thermal margin exceeds 15 °C

Compared with SI7892BDP-T1-GE3, Si7852DP-T1-GE3 trades higher gate charge for lower on-resistance, while IRF7470PBF offers broader distributor availability but sacrifices thermal performance and environmental compliance - making SI7892BDP-T1-GE3 optimal for space-constrained, high-efficiency, and RoHS-compliant designs.

Availability

SI7892BDP-T1-GE3 is available at Aetrix Electronics and suitable for high-current DC/DC converters, redundant power OR-ing circuits, and USB-C PD fast charging adapters requiring stable component supply, long-term lifecycle support, and consistent parametric performance across production batches.

Supply support for SI7892BDP-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with vertical integration from silicon design to packaging.

The SI7892BDP-T1-GE3 belongs to Vishay's PowerPAK® SO-8 TrenchFET® family, engineered specifically for high-efficiency, high-density power conversion in computing, telecom, and industrial applications where thermal management and gate drive simplicity are critical.

FAQ

What is the maximum continuous drain current rating for SI7892BDP-T1-GE3 at 70 °C ambient?

The SI7892BDP-T1-GE3 supports 20 A continuous drain current at T_A = 70 °C (steady-state), as specified in its Absolute Maximum Ratings table. This rating assumes proper PCB copper area and thermal vias to maintain T_J ≤ 150 °C. Derating curves confirm linear reduction from 25 A at 25 °C to 20 A at 70 °C ambient under standard FR4 mounting conditions.

Does SI7892BDP-T1-GE3 support 4.5-V gate drive in production use?

Yes, SI7892BDP-T1-GE3 is fully characterized and guaranteed for operation at V_GS = 4.5 V, with R_DS(on) ≤ 5.7 mΩ at I_D = 22 A. Its V_GS(th) range (1.0–3.0 V) ensures robust turn-on margin, and the device is widely deployed in 5-V and 3.3-V gate-drive systems including synchronous buck controllers like the ISL6269 and MP2315.

Is SI7892BDP-T1-GE3 pin-compatible with standard SO-8 MOSFETs?

Yes, SI7892BDP-T1-GE3 uses the PowerPAK® SO-8 package with identical 6.15 mm × 5.15 mm footprint and pin assignment (G-S-S-S-D-D-D-D) as standard SO-8, enabling direct PCB layout reuse. However, its leadless construction requires updated solder paste stencil design and reflow profile per Vishay document 73257 to ensure reliable bottom-side solder joint formation.

What is the avalanche energy rating of SI7892BDP-T1-GE3?

The SI7892BDP-T1-GE3 is rated for 80 mJ single-pulse avalanche energy (E_AS) with L = 0.1 mH, and supports 40 A repetitive avalanche current (I_AS). These ratings are validated per JEDEC JESD24-11 and enable reliable operation in inductive switching applications such as motor drives and flyback snubberless designs without external protection components.

How does the thermal performance of SI7892BDP-T1-GE3 compare to traditional SO-8 packages?

SI7892BDP-T1-GE3 achieves R_thJC = 2.1 °C/W (typ.), matching DPAK performance and offering ~8× better junction-to-case thermal resistance than standard SO-8 (16 °C/W). On a 4-layer FR4 board, this translates to ~40 °C lower junction temperature at 2.7 W dissipation - directly enabling higher current density and eliminating need for external heatsinks in many applications.

SI7892BDP-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: PowerPAK® SO-8

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 15A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 4.2mOhm @ 25A, 10V

Vgs(th) (Max) @ Id:: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 40 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3775 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 1.8W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® SO-8

SI7892BDP-T1-GE3 FAQ

1.How can I place an order for SI7892BDP-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI7892BDP-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI7892BDP-T1-GE3 reliable?

The price and inventory of SI7892BDP-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI7892BDP-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SI7892BDP-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI7892BDP-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI7892BDP-T1-GE3?

SI7892BDP-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI7892BDP-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI7892BDP-T1-GE3?

For technical support, including SI7892BDP-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI7892BDP-T1-GE3 requirements.

6.How does Aetrix verify that SI7892BDP-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SI7892BDP-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI7892BDP-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SI7892BDP-T1-GE3?

All SI7892BDP-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI7892BDP-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI7892BDP-T1-GE3 part is unused and in its original packaging.

Return procedure for SI7892BDP-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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