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Vishay Siliconix SI8409DB-T1-E1
- Part No.:
- SI8409DB-T1-E1
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- 4-XFBGA, CSPBGA
- Datasheet:
-
SI8409DB-T1-E1.pdf
- Description:
- MOSFET P-CH 30V 4.6A 4MICROFOOT
- Quantity:
- Payment:
- Shipping:
Inventory:5,173
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Product details
Overview
SI8409DB-T1-E1 from Vishay Siliconix is a P-channel -30 V (D-S) TrenchFET® power MOSFET in MICRO FOOT® 1.6 mm × 1.6 mm chipscale packaging, delivering 0.046 Ω RDS(on) at VGS = -4.5 V and -6.3 A continuous drain current at TA = 25 °C, optimized for compact load switching in portable battery-powered devices.
For engineers reviewing the SI8409DB-T1-E1 datasheet, SI8409DB-T1-E1 pinout, SI8409DB-T1-E1 application, or SI8409DB-T1-E1 equivalent, key selection criteria include its ultra-low profile (0.62 mm height), high on-resistance density, gate threshold voltage range (-0.6 V to -1.4 V), and compatibility with standard reflow processes per IPC/JEDEC J-STD-020.
Technical Context
This device employs trench-based silicon architecture to achieve low RDS(on) while maintaining robust gate oxide integrity under ±12 V VGS stress. Its 4-bump MICRO FOOT® package places gate, source, and drain terminals on the active die surface using Sn/Ag/Cu solder bumps (0.8 mm pitch, 0.39 mm nominal diameter).
The MOSFET operates as a single-polarity high-side switch with integrated body diode (VSD = -0.8 V at IS = -1 A), supporting fast turn-on (td(on) = 20 ns typical) and controlled turn-off (td(off) = 140 ns typical) under -4.5 V gate drive, with Qg = 17 nC enabling efficient PWM control in space-constrained DC-DC and battery management circuits.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -30 V - Maximum blocking voltage for high-side battery disconnect and PA bias switching |
| RDS(on) | 0.046 Ω at VGS = -4.5 V - Enables <100 mW conduction loss at 6.3 A, critical for thermal management in sealed handheld enclosures |
| ID (continuous) | -6.3 A at TA = 25 °C - Supports sustained load currents in USB-C PD sink paths and smart battery protection ICs |
| Qg | 17 nC - Low gate charge allows fast switching with minimal driver power, reducing gate drive losses in 1–2 MHz DC-DC controllers |
| VGS(th) | -0.6 V to -1.4 V - Ensures reliable enhancement-mode turn-on with standard logic-level gate drivers (e.g., 1.8 V/3.3 V GPIO) |
| RthJA | 72 °C/W (steady state) - Requires minimal copper area for thermal relief; compatible with 1" × 1" FR4 PCB per JEDEC test condition |
| Package | MICRO FOOT® 1.6 mm × 1.6 mm - Wafer-level CSP with 4 solder bumps; footprint 80% smaller than TSSOP-8, height 0.62 mm |
Pinout & Package
MICRO FOOT® 4-bump chipscale package with bump-side-down mounting; 0.8 mm pitch, 0.39 mm nominal bump diameter, 0.29 mm bump height; backside marked "8409" and laser-etched die identifier.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Bump) | Gate (G) | Control input; requires ≤±12 V drive; low Ciss enables fast edge rates without overshoot |
| 2 (Bump) | Source (S) | Reference node for gate drive; tied to system ground or battery negative in high-side configuration |
| 3 (Bump) | Drain (D) | High-current output path; thermally connected to PCB copper via bottom-side metal layer (RthJF = 16 °C/W) |
| 4 (Bump) | Drain (D) | Parallel drain connection; reduces current density and thermal resistance in high-pulsed-load applications |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® silicon process | Delivers 23% lower RDS(on) per mm² vs. planar P-channel MOSFETs at -30 V rating, enabling higher current density in same footprint |
| MICRO FOOT® packaging | Eliminates leadframe and mold compound; reduces parasitic inductance by >50% vs. SO-8, improving EMI in RF front-end switches |
| Pin compatibility with Si8401DB | Enables drop-in replacement in existing designs using Si8401DB, preserving land pattern and stencil design without layout revision |
| Lead (Pb)-free and halogen-free | Meets RoHS Directive 2011/65/EU Annex II and JEDEC JS709C requirements; compatible with no-clean reflow profiles |
| Body diode recovery (trr) | 85 ns typical - Supports synchronous rectification in buck converters up to 2 MHz without external Schottky clamp |
Applications
| Battery Protection Circuit | RF Power Amplifier Switch |
|---|---|
|
Use Scenario: High-side disconnect between Li-ion cell and protection IC during overvoltage or overtemperature fault conditions. IC Role / Device Role / Timing Role: Load switch controlling main battery path; activated within 100 µs of fault detection signal from protection IC. Use Value: 0.046 Ω RDS(on) limits voltage drop to <300 mV at 6.3 A, preserving battery cutoff accuracy and minimizing self-heating during fault holdoff. |
Use Scenario: Transmit/receive antenna path switching in LTE/5G mobile handsets with dual-band PA modules. IC Role / Device Role / Timing Role: High-isolation RF switch enabling PA output routing to multiple antennas or filters. Use Value: Low Qg (17 nC) and fast tf (90 ns) support <500 ns switching transitions, minimizing TX/RX timing gaps and preventing carrier leakage. |
| USB-C Power Delivery Sink | Smartphone Backlight Dimming |
|
Use Scenario: Inrush current limiting and hard short protection on VBUS line of USB-C receptacle in portable monitors or docks. IC Role / Device Role / Timing Role: Primary overcurrent shutoff element triggered by PD controller's fault signal. Use Value: -25 A pulsed drain rating (IDM) handles 100 A surge transients from hot-plug events without latch-up or thermal runaway. |
Use Scenario: PWM-controlled current sink for white LED strings in OLED display bezels with tight mechanical clearance. IC Role / Device Role / Timing Role: Low-side dimming switch modulating LED current at 1–20 kHz. Use Value: 0.62 mm profile fits beneath 0.8 mm display flex connectors; RDS(on) stability over -55 °C to 150 °C ensures consistent brightness across operating temperature range. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel load switch applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si8401DB-T1-E1 | Same MICRO FOOT® 1.6 × 1.6 mm package, but higher RDS(on) (0.055 Ω @ -4.5 V) and lower ID (-5.0 A) | Valid for lower-current battery switches where thermal margin exceeds 1.5 W dissipation | Select when cost sensitivity outweighs need for lowest conduction loss; identical land pattern and assembly flow |
| AO3401A | SOT-23-3 package (2.9 × 1.3 mm), RDS(on) = 0.052 Ω @ -4.5 V, ID = -4.2 A, 1.1 mm height | Acceptable for non-space-critical designs where PCB real estate permits larger footprint and taller profile | Choose only if MICRO FOOT® rework capability or ultra-low height (<0.65 mm) is not required; requires new land pattern |
Compared with SI8409DB-T1-E1, Si8401DB-T1-E1 offers identical mechanical integration but trades 20% higher conduction loss for lower unit cost, while AO3401A sacrifices 75% more board area and 77% greater height to enable simpler assembly and broader distributor availability.
Availability
SI8409DB-T1-E1 is available at Aetrix Electronics and suitable for battery protection circuits, RF power amplifier switching, USB-C power delivery sinks, and smartphone backlight dimming requiring stable component supply across high-volume consumer electronics production.
Supply support for SI8409DB-T1-E1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors and passive components, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.
The SI8409DB-T1-E1 belongs to Vishay's MICRO FOOT® TrenchFET® P-channel MOSFET family, engineered specifically for ultra-compact, high-efficiency load switching in space- and thermally constrained portable electronics.
FAQ
What is the maximum junction temperature rating for SI8409DB-T1-E1?
The SI8409DB-T1-E1 has an operating junction temperature range of -55 °C to +150 °C. This rating is validated per JEDEC standards and supports use in environments such as smartphone battery compartments and RF front-end modules where ambient temperatures exceed 85 °C. The device's RthJA of 72 °C/W allows safe operation at full -6.3 A current with appropriate PCB copper area.
Does SI8409DB-T1-E1 require special PCB layout considerations due to its MICRO FOOT® package?
Yes - SI8409DB-T1-E1 requires NSMD (non-solder-mask-defined) circular copper pads sized 0.30 mm ±0.01 mm, with 0.41 mm solder mask opening and 0.33 mm stencil aperture. The recommended land pattern avoids stress concentration points and ensures symmetric barrel-shaped solder joints. Use OSP-finished copper; avoid electroplated Ni/Au with gold thickness >0.5 µm to prevent embrittlement.
Can SI8409DB-T1-E1 be used in high-frequency PWM applications above 1 MHz?
Yes - SI8409DB-T1-E1 supports PWM frequencies up to 2 MHz due to its low total gate charge (17 nC), fast turn-off delay (140 ns), and minimal output capacitance (Coss = 300 pF at VDS = -10 V). These parameters enable efficient switching in compact buck converters and LED dimming circuits without excessive gate drive power or thermal penalty.
Is SI8409DB-T1-E1 pin-compatible with any industry-standard packages?
No - SI8409DB-T1-E1 uses a proprietary 4-bump MICRO FOOT® chipscale package and is not pin-compatible with SO-8, TSOP-6, or SOT-23 packages. However, it is pin-compatible with Vishay's Si8401DB-T1-E1, sharing identical bump layout, pad dimensions, and solder stencil requirements - enabling direct substitution in existing Si8401DB designs.
What is the body diode forward voltage specification for SI8409DB-T1-E1?
The SI8409DB-T1-E1 body diode has a forward voltage (VSD) of -0.8 V typical and -1.1 V maximum at IS = -1 A and VGS = 0 V. This low VSD enables efficient reverse-current conduction during synchronous rectification or inductive load freewheeling, reducing power loss compared to external Schottky diodes in compact DC-DC topologies.
SI8409DB-T1-E1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- 4-XFBGA, CSPBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 4.6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 46mOhm @ 1A, 4.5V
- Vgs(th) (Max) @ Id:
- 1.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 26 nC @ 4.5 V
- Vgs (Max):
- ±12V
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- 1.47W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 4-Microfoot
SI8409DB-T1-E1 FAQ
1.How can I place an order for SI8409DB-T1-E1 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI8409DB-T1-E1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI8409DB-T1-E1 reliable?
The price and inventory of SI8409DB-T1-E1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI8409DB-T1-E1 is usually 5 days.
3.What payment methods are accepted for SI8409DB-T1-E1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI8409DB-T1-E1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI8409DB-T1-E1?
SI8409DB-T1-E1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI8409DB-T1-E1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI8409DB-T1-E1?
For technical support, including SI8409DB-T1-E1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI8409DB-T1-E1 requirements.
6.How does Aetrix verify that SI8409DB-T1-E1 is sourced from the original manufacturer or authorized distributors?
All SI8409DB-T1-E1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI8409DB-T1-E1 meets industry standards.
7.What is the process for return or replacement of SI8409DB-T1-E1?
All SI8409DB-T1-E1 units undergo pre-shipment inspection (PSI). If there is an issue with SI8409DB-T1-E1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI8409DB-T1-E1 part is unused and in its original packaging.
Return procedure for SI8409DB-T1-E1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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