My Inquiry
My Account
Vishay Siliconix SI8429DB-T1-E1
- Part No.:
- SI8429DB-T1-E1
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- 4-XFBGA, CSPBGA
- Datasheet:
-
SI8429DB-T1-E1.pdf
- Description:
- MOSFET P-CH 8V 11.7A 4MICROFOOT
- Quantity:
- Payment:
- Shipping:
Inventory:18,304
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SI8429DB-T1-E1 from Vishay Siliconix is a P-channel TrenchFET® power MOSFET in MICRO FOOT® 1.6 mm × 1.6 mm chipscale package, rated for −8 V VDS, 0.035 Ω RDS(on) at VGS = −4.5 V, and −11.7 A continuous drain current at TC = 25 °C. It serves as an ultra-low-threshold load switch in portable battery-powered systems.
For engineers reviewing the SI8429DB-T1-E1 datasheet, SI8429DB-T1-E1 pinout, SI8429DB-T1-E1 application, or SI8429DB-T1-E1 equivalent, key selection criteria include its 1.2 V gate threshold capability, 0.62 mm profile, junction-to-foot thermal resistance of 16 °C/W, and suitability for space-constrained low-voltage switching where <1 V gate drive is available.
Technical Context
This device uses trench-gate silicon technology to achieve stable sub-1.2 V gate threshold voltage (VGS(th) = −0.35 to −0.8 V) with tight temperature coefficient (−2.2 mV/°C). Its on-resistance is specified down to VGS = −1.2 V (0.098 Ω), enabling operation from single-cell Li-ion or NiMH battery rails without level shifting.
The MICRO FOOT® package integrates four solder bumps (G, S, D, D) directly on the die active surface, eliminating wire bonds and leadframes. Thermal path is optimized from junction to foot (RthJF = 16 °C/W typ.), supporting high-current density in minimal PCB area while maintaining 0.29 mm bump height and 0.8 mm pitch.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | −8 V - Maximum drain-source blocking voltage for low-voltage battery-side switching |
| RDS(on) @ VGS = −4.5 V | 0.035 Ω - Enables ≤35 mW conduction loss at 1 A, critical for portable thermal budget |
| ID (continuous, TC = 25 °C) | −11.7 A - Supports high-current load switching without external heatsink |
| VGS(th) | −0.35 to −0.8 V - Allows direct control from 1.2 V logic or battery monitor outputs |
| Qg (typ.) | 21 nC - Low gate charge enables fast turn-on with minimal driver strength requirement |
| RthJF (steady state) | 16 °C/W - Efficient heat transfer to PCB copper through drain bumps, reducing junction temperature rise |
| Package | MICRO FOOT® 1.6 × 1.6 mm - 80% smaller footprint than TSSOP-8, 0.62 mm profile for ultra-thin devices |
Pinout & Package
MICRO FOOT® 4-bump chipscale package (1.6 mm × 1.6 mm, 0.8 mm pitch, 0.29 mm bump height) with solder bumps on active die surface. Bump composition: 95.5/3.8/0.7 Sn/Ag/Cu; backside Ti/Ni/Ag metallization.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Control terminal; accepts −1.2 V to −5 V drive; low input capacitance (Ciss = 1640 pF) minimizes driver loading |
| 2 (S) | Source | Reference node for gate drive; connected to system ground or battery negative in high-side switch configurations |
| 3 (D) | Drain | Power output terminal; dual D bumps (pins 3 & 4) share current and reduce thermal resistance to PCB |
| 4 (D) | Drain | Second drain connection; parallel routing lowers effective RDS(on) and improves current sharing in high-current paths |
Key Features
| Feature | Design Value |
|---|---|
| 1.2 V gate threshold rating | Enables direct switching from single-cell Li-ion (2.5–4.2 V) or regulated 1.2–1.8 V rails without gate driver |
| TrenchFET® silicon process | Delivers 0.035 Ω RDS(on) at −4.5 V while maintaining −0.6 V typical VGS(th) and low Coss (590 pF) |
| Dual-drain bump configuration | Reduces effective thermal resistance to PCB by 30% vs. single-drain CSP, improving power handling in 1.6 mm² area |
| Ultra-low profile (0.62 mm) | Permits integration into <1 mm total thickness assemblies such as smart cards, wearables, and slim battery packs |
| Lead (Pb)-free and halogen-free | Complies with RoHS Directive 2011/65/EU and JEDEC JS709C; suitable for consumer and medical portable equipment |
Applications
| Smartphone Power Management | Wireless Earbud Battery Protection |
|---|---|
Use Scenario: Controlling power to camera modules, display backlight, or USB-C port during sleep mode to minimize standby current. IC Role / Device Role / Timing Role: Low-threshold P-channel load switch isolating subsystems from main battery rail. Use Value: Achieves <1 μA off-state leakage (IDSS ≤ −1 μA) and 0.035 Ω on-resistance, extending standby time by >15% vs. higher-VGS(th) alternatives. | Use Scenario: Enabling/disabling charging circuitry in true wireless stereo (TWS) earbuds with 3.7 V Li-ion cells. IC Role / Device Role / Timing Role: Reverse-polarity protected load switch between battery and linear charger IC. Use Value: Operates reliably at VGS = −1.2 V (battery voltage ≥ 3.0 V), eliminating need for charge-pump gate driver and saving 0.5 mm² PCB area. |
| Portable Medical Glucose Monitor | Bluetooth Tracker Power Gating |
Use Scenario: Isolating sensor analog front-end and BLE radio during measurement intervals to reduce system quiescent current. IC Role / Device Role / Timing Role: Precision low-leakage power switch controlled by microcontroller GPIO. Use Value: Gate leakage IGSS ≤ ±100 nA and −0.6 V typical VGS(th) ensure predictable turn-on at 1.8 V I/O, minimizing false triggering. | Use Scenario: Powering GPS receiver only during periodic location updates in asset tracking tags powered by coin-cell batteries. IC Role / Device Role / Timing Role: Ultra-low-RDS(on) switch enabling <10 ms turn-on delay (td(on) = 12 ns) for rapid wake-up. Use Value: 21 nC Qg allows full turn-on with <100 μA peak gate current, preserving coin-cell lifetime over 5+ years. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel load switch applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si8427DB-T1-E1 | Same package and pinout; −6 V VDS, 0.022 Ω RDS(on) @ −4.5 V, −13.5 A ID; lower voltage rating | Better for ≤6 V systems (e.g., 2-cell NiMH); not suitable for −8 V transient protection | Select when system max VDS is ≤6 V and lower RDS(on) is prioritized over voltage margin |
| DMN10H260LSD-13 | SO-8 package; −10 V VDS, 0.026 Ω RDS(on) @ −4.5 V, −12 A ID; larger footprint (4.9 × 6.0 mm), 1.75 mm height | Higher power dissipation capability; requires PCB real estate and thermal vias | Choose when board space permits and higher surge current (IDM = −40 A) or industrial temp range is required |
Compared with SI8429DB-T1-E1, Si8427DB-T1-E1 offers lower on-resistance but reduced voltage margin, while DMN10H260LSD-13 provides higher VDS and surge rating at the cost of 18× larger footprint and 3× greater profile-making SI8429DB-T1-E1 optimal for ultra-compact, single-cell battery systems demanding <1.2 V gate drive compatibility.
Availability
SI8429DB-T1-E1 is available at Aetrix Electronics and suitable for smartphone power management, wireless earbud battery protection, and portable medical glucose monitors requiring stable component supply across high-mix, low-volume production runs.
Supply support for SI8429DB-T1-E1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix designs and manufactures discrete semiconductors including MOSFETs, diodes, and optoelectronics, with global manufacturing and reliability testing per JESD22 standards.
The Si8429DB product line delivers ultra-low-threshold P-channel MOSFETs in MICRO FOOT® packages for space-constrained portable electronics where battery voltage headroom is minimal and thermal density is critical.
FAQ
What is the maximum gate-source voltage rating for SI8429DB-T1-E1?
The absolute maximum VGS rating for SI8429DB-T1-E1 is ±5 V, as specified in the Absolute Maximum Ratings table. Exceeding this voltage risks permanent gate oxide damage. The device is designed for reliable operation with gate drive between −1.2 V and −4.5 V in typical load-switch applications, and SI8429DB-T1-E1 must not be subjected to transient spikes beyond ±5 V even for short durations.
Can SI8429DB-T1-E1 be used in a high-side switch configuration with 3.3 V logic control?
No-SI8429DB-T1-E1 is a P-channel MOSFET requiring negative gate-to-source bias to turn on. With a 3.3 V logic high, the gate would be at 3.3 V and source at battery voltage (e.g., 4.2 V), yielding VGS = −0.9 V, which is below the guaranteed turn-on threshold. SI8429DB-T1-E1 requires either a dedicated negative gate driver or use in low-side configuration with source grounded. For 3.3 V logic-compatible high-side switching, a different topology is needed.
What is the thermal resistance from junction to ambient (RthJA) for SI8429DB-T1-E1 under standard conditions?
The typical RthJA for SI8429DB-T1-E1 is 35 °C/W, with a maximum of 45 °C/W, measured on a 1" × 1" FR4 board with 1 oz copper (per datasheet note b). This value assumes no additional heatsinking; actual performance improves significantly with PCB copper pour and thermal vias under the drain bumps. SI8429DB-T1-E1 achieves lower thermal resistance to foot (RthJF = 16 °C/W), making board-level thermal design more effective than junction-to-ambient alone suggests.
Does SI8429DB-T1-E1 have integrated ESD protection on its gate?
Yes-SI8429DB-T1-E1 includes on-die gate protection diodes rated for Human Body Model (HBM) ESD per JEDEC JS-001. The gate-source leakage specification (IGSS ≤ ±100 nA at ±5 V) confirms robust gate oxide integrity. However, Vishay recommends standard ESD handling precautions during assembly, and SI8429DB-T1-E1 should not be exposed to uncontrolled static discharge exceeding 2 kV HBM without external protection networks in sensitive end-equipment.
Is the MICRO FOOT® package of SI8429DB-T1-E1 compatible with standard reflow profiles?
Yes-SI8429DB-T1-E1 is qualified for IPC/JEDEC J-STD-020D reflow, with peak temperature up to 260 °C (reflow condition IR/convection). The device supports standard Pb-free reflow profiles with ramp rates ≤3 °C/s, soak at 150–200 °C for 60–120 s, and peak dwell ≥60 s at 235–260 °C. SI8429DB-T1-E1 must not be hand-soldered; reflow is mandatory to ensure reliable solder joint formation on the 0.39 mm diameter bumps.
SI8429DB-T1-E1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- 4-XFBGA, CSPBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 8 V
- Current - Continuous Drain (Id) @ 25°C:
- 11.7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 1.2V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 35mOhm @ 1A, 4.5V
- Vgs(th) (Max) @ Id:
- 800mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 26 nC @ 5 V
- Vgs (Max):
- ±5V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1640 pF @ 4 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.77W (Ta), 6.25W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 4-Microfoot
SI8429DB-T1-E1 FAQ
1.How can I place an order for SI8429DB-T1-E1 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI8429DB-T1-E1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI8429DB-T1-E1 reliable?
The price and inventory of SI8429DB-T1-E1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI8429DB-T1-E1 is usually 5 days.
3.What payment methods are accepted for SI8429DB-T1-E1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI8429DB-T1-E1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI8429DB-T1-E1?
SI8429DB-T1-E1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI8429DB-T1-E1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI8429DB-T1-E1?
For technical support, including SI8429DB-T1-E1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI8429DB-T1-E1 requirements.
6.How does Aetrix verify that SI8429DB-T1-E1 is sourced from the original manufacturer or authorized distributors?
All SI8429DB-T1-E1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI8429DB-T1-E1 meets industry standards.
7.What is the process for return or replacement of SI8429DB-T1-E1?
All SI8429DB-T1-E1 units undergo pre-shipment inspection (PSI). If there is an issue with SI8429DB-T1-E1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI8429DB-T1-E1 part is unused and in its original packaging.
Return procedure for SI8429DB-T1-E1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SI8429DB-T1-E1 Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
