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NXP Semiconductors SI9410DY,518
- Part No.:
- SI9410DY,518
- Manufacturer:
- NXP Semiconductors
- Category:
- FETs, MOSFETs
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
SI9410DY,518.pdf
- Description:
- MOSFET N-CH 30V SOT96-1
- Quantity:
- Payment:
- Shipping:
Inventory:2,987
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Product details
Overview
SI9410DY,518 from NXP Semiconductors (formerly Philips Semiconductors) is an N-channel TrenchMOS™ logic-level power MOSFET in SO8 (SOT96-1) package, rated for 30 V VDS, 7 A continuous drain current at 25 °C, and 19 mΩ RDS(on) at VGS = 10 V. It serves as a low-loss, fast-switching power switch in high-efficiency DC-DC converters and battery-powered motor control circuits.
For engineers reviewing the SI9410DY,518 datasheet, SI9410DY,518 pinout, SI9410DY,518 application, or SI9410DY,518 equivalent, key selection criteria include its logic-level gate drive compatibility (VGS(th) = 1 V typ), low RDS(on) at 4.5 V (25 mΩ), thermal resistance of 50 K/W (junction-to-ambient, PCB-mounted), and SO8 footprint suitability for compact portable power designs.
Technical Context
This MOSFET uses TrenchMOS™ technology to achieve enhanced channel density and reduced on-resistance without requiring elevated gate drive voltage. Its gate threshold voltage (1 V typ) enables direct interfacing with 3.3 V and 5 V microcontrollers, while its 20.8 A peak drain current supports transient load demands in motor startup and battery discharge pulses.
The device integrates a source-drain body diode with 0.85 V forward voltage at 2 A and 30 ns reverse recovery time, supporting synchronous rectification and freewheeling in buck converters and H-bridge topologies. Its SO8 package provides four parallel drain pins and dual-source pins to minimize conduction losses and improve thermal spreading.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V maximum - supports 24 V nominal bus systems with margin for transients and ripple. |
| RDS(on) @ VGS = 4.5 V | 25 mΩ max - enables efficient switching at logic-level gate drive voltages common in portable systems. |
| ID (continuous) | 7 A at Tamb = 25 °C - delivers sufficient current for small DC motors and Li-ion battery discharge paths. |
| Qg(tot) | 14.6 nC typical - balances switching speed and gate driver loading for 100–500 kHz PWM operation. |
| Tj max | 150 °C - defines safe operating junction temperature under sustained power dissipation. |
| Rth(j-a) | 50 K/W - indicates thermal performance on standard PCB layout, guiding heatsinking requirements. |
| VGS(th) | 1 V min - ensures reliable turn-on with low-voltage controllers and reduces risk of partial conduction. |
Pinout & Package
SI9410DY,518 is housed in an SO8 plastic small outline package (SOT96-1), 4.8 mm × 6.2 mm × 1.75 mm, with gull-wing leads and 1.27 mm pitch. The package features four parallel drain terminals for low-inductance, high-current routing and dual-source connections for symmetrical current sharing.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | No connection | Unused internal pad; must remain unconnected to avoid parasitic coupling or latch-up risk. |
| 2, 3 | Source (S) | Parallel source terminals - reduce effective source inductance and improve current sharing in high-di/dt applications. |
| 4 | Gate (G) | Control input - requires <15 V absolute max rating; low input capacitance (Ciss ≈ 1000 pF) eases driver design. |
| 5–8 | Drain (D) | Four parallel drain terminals - lower total package resistance and enhance thermal conduction to PCB copper pour. |
Key Features
| Feature | Design Value |
|---|---|
| Logic-level gate drive | Turns on fully with 4.5 V gate voltage - eliminates need for level-shifting circuitry in 3.3 V/5 V MCU-based designs. |
| Low RDS(on) at 4.5 V | 25 mΩ max - minimizes conduction loss in battery-powered equipment where efficiency directly impacts runtime. |
| Fast switching | 11 ns fall time and 5 ns turn-on delay - supports high-frequency PWM (>300 kHz) for compact magnetics in DC-DC converters. |
| Integrated body diode | 30 ns trr, 0.85 V VSD - enables reliable freewheeling in half-bridge and buck topologies without external diode. |
| SO8 thermal performance | 50 K/W Rth(j-a) - allows up to 2.5 W power dissipation on standard FR-4 PCB with minimum copper area. |
Applications
| DC-DC Converters | DC Motor Control |
|---|---|
|
Use Scenario: Synchronous rectifier in 5 V–12 V buck converter for notebook PC core voltage regulation. IC Role / Device Role / Timing Role: Low-side synchronous switch replacing Schottky diode to reduce conduction loss and improve efficiency above 85%. Use Value: 25 mΩ RDS(on) at 4.5 V gate drive cuts conduction loss by >40% vs. discrete diode solution, extending battery life. |
Use Scenario: H-bridge low-side switch driving 12 V brushed DC motor in portable medical pump. IC Role / Device Role / Timing Role: Power switch controlling motor direction and speed via PWM, with integrated body diode enabling bidirectional freewheeling. Use Value: 30 ns reverse recovery time prevents shoot-through during polarity reversal, ensuring robust commutation. |
| Lithium-ion Battery Protection | Notebook PC Power Management |
|
Use Scenario: Charge/discharge path switch in single-cell Li-ion protection IC module. IC Role / Device Role / Timing Role: Main power FET isolating battery from load during overcurrent or overtemperature fault conditions. Use Value: 1 V gate threshold ensures compatibility with protection IC's 3.3 V output, enabling fast, low-power cutoff response. |
Use Scenario: System power rail switch enabling dynamic power domain isolation in ultrabook platform. IC Role / Device Role / Timing Role: Load switch managing power to USB-C PD controller or display interface subsystem. Use Value: SO8 package with four drain pins supports 7 A continuous current while maintaining <1.5 mm board height for thin-profile designs. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRLML6344TRPBF | RDS(on) = 32 mΩ @ 4.5 V; SOT-23 package; 3.7 A ID rating | Lower current capacity and higher on-resistance - suitable only for sub-3 A loads with space-constrained layouts. | Choose when board area is critical and load current remains below 3.5 A; verify thermal derating on 2-layer PCB. |
| DMN3025LSD-13 | RDS(on) = 23 mΩ @ 4.5 V; SO8 package; 8.5 A ID; dual N-channel | Includes matched second FET for complementary switching - adds functionality but increases cost and complexity for single-switch use. | Prefer when designing dual-switch topologies (e.g., half-bridge) or needing tighter RDS(on) matching across channels. |
Compared with IRLML6344TRPBF and DMN3025LSD-13, SI9410DY,518 offers optimal balance of 7 A current capability, 25 mΩ on-resistance at 4.5 V, and proven SO8 thermal performance - making it ideal for mid-power portable applications where reliability and manufacturability outweigh ultra-miniaturization or multi-FET integration needs.
Availability
SI9410DY,518 is available at Aetrix Electronics and suitable for DC-DC converters, DC motor control, and lithium-ion battery applications requiring stable component supply, long-term lifecycle support, and traceable sourcing for industrial and consumer OEM programs.
Supply support for SI9410DY,518 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors, formerly Philips Semiconductors, is a global leader in high-performance analog and power semiconductor solutions, with deep expertise in automotive, industrial, and portable power management technologies.
The SI9410DY,518 belongs to NXP's legacy TrenchMOS™ logic-level power MOSFET product line, engineered specifically for energy-efficient, space-constrained DC power conversion and motor drive applications in portable and battery-operated systems.
FAQ
What is the maximum gate-source voltage rating for SI9410DY,518?
The SI9410DY,518 has a maximum gate-source voltage (VGS) rating of ±20 V, per its Absolute Maximum Ratings table. Exceeding this limit risks permanent gate oxide damage. For reliable operation, keep VGS within −12 V to +15 V during normal switching, and ensure transient spikes (e.g., from inductive kickback) remain within the ±20 V boundary. The SI9410DY,518 is designed for logic-level drive, so typical gate drive voltages range from 3.3 V to 10 V.
Can SI9410DY,518 be used as a high-side switch?
No, SI9410DY,518 is not suitable for high-side switching without additional gate drive circuitry. As an N-channel MOSFET, it requires the gate voltage to be higher than the source voltage to conduct - which is impractical in high-side configurations without a charge pump or bootstrap circuit. The SI9410DY,518 is optimized for low-side switching, such as synchronous rectification or ground-referenced motor control. For high-side use, a P-channel device or dedicated high-side driver IC would be required alongside SI9410DY,518.
What is the thermal resistance (Rth(j-a)) of SI9410DY,518 under standard PCB mounting?
The SI9410DY,518 has a junction-to-ambient thermal resistance (Rth(j-a)) of 50 K/W when mounted on a standard printed-circuit board with minimum footprint and pulsed conditions (tp ≤10 s), as specified in Table 5 of its datasheet. This value assumes no added heatsink and reflects typical performance on 2-layer FR-4 with limited copper pour. To achieve this rating, ensure at least 1 cm² of 2-oz copper connected to drain pins (pins 5–8) and maintain adequate airflow or board-level thermal management for continuous operation near 2.5 W dissipation.
Does SI9410DY,518 have avalanche capability?
The SI9410DY,518 datasheet does not specify rated unclamped inductive switching (UIS) or avalanche energy (EAS) parameters. Its Absolute Maximum Ratings define only DC and pulsed drain current limits (ID and IDM) and VDS - with no mention of repetitive or single-pulse avalanche tolerance. Therefore, SI9410DY,518 should not be relied upon for avalanche-rated operation. Designers must implement external clamping (e.g., TVS diodes or RCD snubbers) to limit VDS overshoot during inductive switching events.
How does the body diode performance of SI9410DY,518 compare to discrete Schottky diodes?
The SI9410DY,518 integrates a silicon body diode with VSD = 0.85 V (typ) at 2 A and trr = 30 ns (typ), which is slower and has higher forward voltage than most Schottky diodes (typically 0.3–0.5 V, <10 ns trr). However, its diode is co-packaged and thermally coupled to the MOSFET die, simplifying layout and reducing parasitic inductance. In synchronous rectification, the SI9410DY,518's body diode conducts only during dead-time intervals - its performance is acceptable when complemented by active gate control, unlike standalone Schottky solutions that require separate placement and routing.
SI9410DY,518 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- TrenchMOS™
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 7A (Tj)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 30mOhm @ 7A, 10V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 50 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- 2.5W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO
SI9410DY,518 FAQ
1.How can I place an order for SI9410DY,518 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI9410DY,518 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI9410DY,518 reliable?
The price and inventory of SI9410DY,518 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI9410DY,518 is usually 5 days.
3.What payment methods are accepted for SI9410DY,518?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI9410DY,518 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI9410DY,518?
SI9410DY,518 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI9410DY,518 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI9410DY,518?
For technical support, including SI9410DY,518 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI9410DY,518 requirements.
6.How does Aetrix verify that SI9410DY,518 is sourced from the original manufacturer or authorized distributors?
All SI9410DY,518 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI9410DY,518 meets industry standards.
7.What is the process for return or replacement of SI9410DY,518?
All SI9410DY,518 units undergo pre-shipment inspection (PSI). If there is an issue with SI9410DY,518, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI9410DY,518 part is unused and in its original packaging.
Return procedure for SI9410DY,518:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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