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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIA406DJ-T1-GE3

Name: SIA406DJ-T1-GE3
Brand: Vishay Siliconix
SKU: SIA406DJ-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIA406DJ-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® SC-70-6

Datasheet:: SIA406DJ-T1-GE3.pdf

Description:: MOSFET N-CH 12V 4.5A PPAK SC70-6

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Product details

Overview

SIA406DJ-T1-GE3 from Vishay Siliconix is an N-channel 12-V drain-source TrenchFET® power MOSFET in a thermally enhanced PowerPAK® SC-70-6L package, delivering 4.5 A continuous drain current at 150 °C junction temperature, 0.0198 Ω R_DS(on) at V_GS = 4.5 V, and 13.7 nC total gate charge - optimized for high-efficiency load switching in space-constrained portable devices.

For engineers reviewing the SIA406DJ-T1-GE3 datasheet, SIA406DJ-T1-GE3 pinout, SIA406DJ-T1-GE3 application, or SIA406DJ-T1-GE3 equivalent, key selection criteria include its low 1.8-V logic-level gate drive capability, 100 % R_g tested gate resistance, halogen-free and RoHS-compliant construction, and thermal performance validated under JEDEC-standard mounting conditions.

Technical Context

This device uses trench-gate silicon technology to achieve low on-resistance with fast switching dynamics: typical C_iss = 1380 pF, C_oss = 345 pF, and Crss = 155 pF at V_DS = 6 V, enabling efficient operation in DC/DC converter topologies up to several MHz. Its gate threshold voltage (V_GS(th)) is specified from 0.4 V to 1.0 V at 250 µA, supporting robust turn-on with 2.5-V and 1.8-V microcontroller outputs.

The PowerPAK SC-70-6L package features exposed copper drain pads on the bottom side for low thermal resistance (R_thJC = 5.3 °C/W typ), while maintaining a compact 2.05 mm × 2.05 mm footprint. Absolute maximum ratings include ±8 V gate-source voltage, 12 V drain-source breakdown, and 20 A pulsed drain current - all validated per JEDEC JESD47 stress testing protocols.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	12 V - supports input rails up to 12 V without avalanche stress in load switch or synchronous rectifier roles
R_DS(on)	0.0198 Ω at V_GS = 4.5 V - enables <100 mW conduction loss at 4.5 A, critical for battery runtime in portable systems
I_D (cont)	4.5 A at T_J = 150 °C - package-limited current rating suitable for sustained operation in thermally constrained PCB layouts
Q_g	13.7 nC at V_GS = 4.5 V - determines gate driver power requirement and switching transition time in high-frequency converters
V_GS(th)	0.4–1.0 V - ensures reliable enhancement-mode turn-on with 1.8-V and 2.5-V logic families without level shifting
R_thJA	28–36 °C/W - defines thermal derating curve for ambient-limited operation on standard FR4 boards
C_iss	1380 pF - impacts gate drive loop stability and EMI generation in hard-switched applications

Pinout & Package

Package: PowerPAK® SC-70-6L - leadless, surface-mount, thermally enhanced 2.05 mm × 2.05 mm footprint with exposed drain pad on bottom side for direct thermal coupling to PCB copper.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control terminal; accepts logic-level drive; 100 % R_g tested for consistent switching timing
2 (S)	Source	Reference node for gate drive and current return path; tied to system ground or low-side switch node
3 (D)	Drain	Main current output; connected to exposed copper pad on package underside for thermal and electrical conduction
4 (D)	Drain	Parallel drain connection to Pin 3; reduces package inductance and improves current sharing in high-di/dt paths
5 (D)	Drain	Third parallel drain connection; enhances thermal dissipation via multiple PCB thermal vias
6 (S)	Source	Second source terminal; provides low-inductance return path and improves layout symmetry for high-frequency stability

Key Features

Feature	Design Value
TrenchFET® silicon process	Delivers ultra-low R_DS(on) at 1.8–4.5 V gate drive, enabling direct interface with modern low-voltage MCUs
PowerPAK SC-70-6L package	Reduces board area by >50 % vs. SO-8 while lowering R_thJA by 40 % compared to standard SC-70 variants
100 % R_g tested	Ensures gate resistance ≤2.5 Ω across production lot, minimizing variation in turn-on/turn-off timing
Halogen-free & RoHS compliant	Fulfills IEC 61249-2-21 and Directive 2002/95/EC requirements for environmentally regulated end equipment
Body diode t_rr = 22–33 ns	Supports synchronous rectification in buck converters with minimal reverse recovery loss and EMI

Applications

Portable Load Switching	DC/DC Converter Synchronous Rectifier
Use Scenario: Powering USB peripherals, SD card slots, or backlight LEDs in smartphones and tablets using battery-supplied 3.3 V or 5 V rails. IC Role / Device Role: Low-side load switch controlling power delivery with minimal voltage drop and fast enable/disable response. Use Value: Achieves <50 mV dropout at 4.5 A due to 0.0198 Ω R_DS(on), preserving battery voltage headroom and extending runtime.	Use Scenario: Replacing Schottky diodes in 3–12 V input buck converters operating at 500 kHz–2 MHz switching frequencies. IC Role / Device Role: Synchronous rectifier in secondary-side power path, driven by controller's complementary gate signal. Use Value: Reduces conduction loss by >60 % vs. 0.3-V Schottky, improving efficiency by 1.2–2.5 % at 2–4 A output current.
Low-Voltage Logic-Level Switching	Hot-Swap Protection Circuit
Use Scenario: Enabling/disabling power to FPGA I/O banks or sensor interfaces controlled by 1.8-V or 2.5-V GPIO pins. IC Role / Device Role: Gate-driven N-channel switch with sub-1-V threshold ensuring full enhancement at logic-level gate voltages. Use Value: Eliminates need for external level shifters or P-channel high-side switches, simplifying BOM and layout.	Use Scenario: Inrush current limiting during hot-plug insertion of modules into industrial backplanes or docking stations. IC Role / Device Role: Controlled ramp-up switch with gate slew-rate management to limit dI/dt during power-up. Use Value: With 13.7 nC Q_g and 0.5–2.5 Ω R_g, enables precise gate timing control to hold inrush below 5 A peak.

Portable Load Switching

DC/DC Converter Synchronous Rectifier

Use Scenario: Powering USB peripherals, SD card slots, or backlight LEDs in smartphones and tablets using battery-supplied 3.3 V or 5 V rails.

IC Role / Device Role: Low-side load switch controlling power delivery with minimal voltage drop and fast enable/disable response.

Use Value: Achieves <50 mV dropout at 4.5 A due to 0.0198 Ω R_DS(on), preserving battery voltage headroom and extending runtime.

Use Scenario: Replacing Schottky diodes in 3–12 V input buck converters operating at 500 kHz–2 MHz switching frequencies.

IC Role / Device Role: Synchronous rectifier in secondary-side power path, driven by controller's complementary gate signal.

Use Value: Reduces conduction loss by >60 % vs. 0.3-V Schottky, improving efficiency by 1.2–2.5 % at 2–4 A output current.

Low-Voltage Logic-Level Switching

Hot-Swap Protection Circuit

Use Scenario: Enabling/disabling power to FPGA I/O banks or sensor interfaces controlled by 1.8-V or 2.5-V GPIO pins.

IC Role / Device Role: Gate-driven N-channel switch with sub-1-V threshold ensuring full enhancement at logic-level gate voltages.

Use Value: Eliminates need for external level shifters or P-channel high-side switches, simplifying BOM and layout.

Use Scenario: Inrush current limiting during hot-plug insertion of modules into industrial backplanes or docking stations.

IC Role / Device Role: Controlled ramp-up switch with gate slew-rate management to limit dI/dt during power-up.

Use Value: With 13.7 nC Q_g and 0.5–2.5 Ω R_g, enables precise gate timing control to hold inrush below 5 A peak.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiA403DJ-T1-GE3	Higher R_DS(on) = 0.027 Ω at V_GS = 4.5 V; same package and pinout	Lower current handling (3.5 A) limits use in >3 A load switch or converter rectifier roles	Select when lower cost is prioritized over conduction loss and thermal margin is sufficient
DMN2004LKQ-7	Different package (SOT-23-6); R_DS(on) = 0.022 Ω at V_GS = 4.5 V; higher Q_g = 17.5 nC	Larger footprint and higher gate charge increase layout area and driver loading vs. SIA406DJ-T1-GE3	Choose only if SOT-23-6 is already standardized in design and thermal constraints allow higher R_thJA

Compared with SiA403DJ-T1-GE3 and DMN2004LKQ-7, the SIA406DJ-T1-GE3 offers the lowest R_DS(on) in the PowerPAK SC-70-6L form factor, enabling highest efficiency in thermally dense portable designs where board area and junction temperature rise are critical constraints.

Availability

SIA406DJ-T1-GE3 is available at Aetrix Electronics and suitable for portable load switching, DC/DC converter synchronous rectification, and low-voltage logic-level switching applications requiring stable component supply, long-term lifecycle support, and halogen-free compliance.

Supply support for SIA406DJ-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on high-reliability, high-efficiency, and miniaturized solutions.

The PowerPAK SC-70 family was developed to deliver high-current capability in ultra-small footprints for battery-powered and space-constrained electronics, targeting portable computing, wearables, and power management IC co-location.

FAQ

What is the maximum continuous drain current rating for SIA406DJ-T1-GE3 at 70 °C case temperature?

The SIA406DJ-T1-GE3 supports 4.5 A continuous drain current at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This rating is package-limited and remains unchanged from the 25 °C rating due to thermal design of the PowerPAK SC-70-6L's exposed drain pad, which maintains effective heat transfer even at elevated case temperatures. The SIA406DJ-T1-GE3 must be mounted on a PCB with adequate copper area and thermal vias to sustain this current reliably.

Does SIA406DJ-T1-GE3 support 1.8-V gate drive for full enhancement?

Yes, the SIA406DJ-T1-GE3 is fully characterized for 1.8-V gate drive: R_DS(on) = 0.0264 Ω at V_GS = 1.8 V and I_D = 3 A, with guaranteed V_GS(th) down to 0.4 V. This enables direct interface with 1.8-V microcontrollers and FPGAs without level-shifting circuitry. The SIA406DJ-T1-GE3 achieves >90 % of its rated current capability at 1.8 V, making it suitable for ultra-low-voltage portable power architectures.

What is the thermal resistance from junction to ambient for SIA406DJ-T1-GE3 on a standard FR4 board?

The SIA406DJ-T1-GE3 has a typical junction-to-ambient thermal resistance (R_thJA) of 28 °C/W and a maximum of 36 °C/W when mounted on a 1" × 1" FR4 board, per the datasheet test condition. This value assumes standard soldering per JEDEC J-STD-020 and includes contributions from package conduction, PCB copper spreading, and natural convection. The SIA406DJ-T1-GE3 benefits significantly from additional thermal vias under the exposed drain pad to approach the lower end of this range.

Is SIA406DJ-T1-GE3 suitable for synchronous rectification in a 1-MHz buck converter?

Yes, the SIA406DJ-T1-GE3 is suitable for synchronous rectification at 1 MHz due to its low gate charge (13.7 nC at V_GS = 4.5 V), fast switching times (t_d(on) = 10 ns, t_f = 14 ns), and low output capacitance (C_oss = 345 pF). These parameters minimize switching losses and ensure clean transitions in high-frequency topologies. The SIA406DJ-T1-GE3 body diode t_rr of 22–33 ns further supports zero-voltage switching behavior in well-designed controllers.

How does the PowerPAK SC-70-6L package of SIA406DJ-T1-GE3 differ from standard SC-70 packages?

The PowerPAK SC-70-6L package used by SIA406DJ-T1-GE3 differs from standard SC-70 by incorporating three drain terminals (Pins 3, 4, 5) and dual source terminals (Pins 2 and 6), plus an exposed copper drain pad on the bottom side. This configuration reduces package inductance, lowers R_thJC to 5.3 °C/W, and increases current-handling capacity to 4.5 A - whereas standard SC-70 packages typically support ≤2 A and lack thermal enhancement. The SIA406DJ-T1-GE3 leverages this structure for superior power density and thermal performance.

SIA406DJ-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: PowerPAK® SC-70-6

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 12 V

Current - Continuous Drain (Id) @ 25°C:: 4.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 1.8V, 4.5V

Rds On (Max) @ Id, Vgs:: 19.8mOhm @ 10.8A, 4.5V

Vgs(th) (Max) @ Id:: 1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 23 nC @ 5 V

Vgs (Max):: ±8V

Input Capacitance (Ciss) (Max) @ Vds:: 1380 pF @ 6 V

FET Feature:: -

Power Dissipation (Max):: 3.5W (Ta), 19W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® SC-70-6

SIA406DJ-T1-GE3 FAQ

1.How can I place an order for SIA406DJ-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIA406DJ-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIA406DJ-T1-GE3 reliable?

The price and inventory of SIA406DJ-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIA406DJ-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SIA406DJ-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIA406DJ-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIA406DJ-T1-GE3?

SIA406DJ-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIA406DJ-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIA406DJ-T1-GE3?

For technical support, including SIA406DJ-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIA406DJ-T1-GE3 requirements.

6.How does Aetrix verify that SIA406DJ-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SIA406DJ-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIA406DJ-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SIA406DJ-T1-GE3?

All SIA406DJ-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIA406DJ-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIA406DJ-T1-GE3 part is unused and in its original packaging.

Return procedure for SIA406DJ-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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