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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIA408DJ-T1-GE3

Name: SIA408DJ-T1-GE3
Brand: Vishay Siliconix
SKU: SIA408DJ-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIA408DJ-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® SC-70-6

Datasheet:: SIA408DJ-T1-GE3.pdf

Description:: MOSFET N-CH 30V 4.5A PPAK SC70-6

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Product details

Overview

SIA408DJ-T1-GE3 from Vishay Siliconix is an N-channel 30 V (D-S) TrenchFET® Power MOSFET in a thermally enhanced PowerPAK® SC-70-6L package, delivering R_DS(on) = 0.036 Ω at V_GS = 10 V, 4.5 A continuous drain current, and 7 nC typical gate charge - optimized for portable load switching and DC/DC converter high-side or low-side operation.

For engineers reviewing the SIA408DJ-T1-GE3 datasheet, SIA408DJ-T1-GE3 pinout, SIA408DJ-T1-GE3 application, or SIA408DJ-T1-GE3 equivalent, key selection criteria include its 30 V V_DS, low 0.036 Ω on-resistance at 10 V drive, 6-pin leadless PowerPAK SC-70 footprint, and RoHS/halogen-free compliance for space-constrained battery-powered systems.

Technical Context

This MOSFET uses trench-gate silicon technology to achieve low R_DS(on) with fast switching dynamics: t_d(on) = 10–15 ns and t_f = 10–15 ns at V_GEN = 10 V, supported by C_iss = 830 pF and Q_g = 7–11 nC (V_GS = 4.5 V). Its body diode exhibits V_SD = 0.8–1.2 V at I_S = 6.2 A and t_rr = 20–40 ns.

Thermal design is enabled by R_thJC = 5.5 °C/W (max) and R_thJA = 37 °C/W (max) on FR4; the PowerPAK SC-70 package features exposed copper drain pads on the bottom side for direct thermal coupling, with no solder fillet required at the singulated edge per Vishay specification.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - maximum blocking voltage for 24 V rail and USB PD applications
R_DS(on) @ V_GS = 10 V	0.036 Ω - enables <160 mW conduction loss at 4.5 A in portable power switches
I_D (continuous)	4.5 A at T_C = 25 °C - supports compact DC/DC output stages without external heatsink
Q_g (typ.)	7 nC @ V_GS = 4.5 V - reduces gate drive power and enables efficient 1–2 MHz switching
V_GS(th)	0.6–1.6 V - ensures turn-on with 1.8 V/3.3 V logic-level microcontrollers
R_thJA (max)	37 °C/W - defines thermal derating on standard 1" × 1" FR4; limits ambient max to ~80 °C at full I_D
Package	PowerPAK® SC-70-6L - 2.05 mm × 2.05 mm footprint, leadless, bottom-side thermal pad

Pinout & Package

PowerPAK® SC-70-6L is a 6-terminal, leadless surface-mount package with three drain terminals (pins 1, 2, 3), one gate (pin 4), and two source terminals (pins 5, 6), designed for low-inductance, high-current routing and bottom-side thermal conduction.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3	Drain (D)	Parallel-connected high-current path to V_IN/switch node; electrically and thermally tied to exposed copper bottom pad
4	Gate (G)	Control input requiring <7 nC charge; sensitive to ESD; routed away from noisy power traces
5, 6	Source (S)	Return path for load current; dual pins reduce resistance and inductance in high-dI/dt paths

Key Features

Feature	Design Value
TrenchFET® silicon process	Delivers 0.036 Ω R_DS(on) at 10 V in 2.05 mm × 2.05 mm footprint - 30% lower on-resistance than planar equivalents
PowerPAK® SC-70-6L package	Exposes drain copper on bottom side for direct PCB thermal transfer - eliminates need for via arrays under device
Logic-level gate threshold	V_GS(th) = 0.6–1.6 V enables direct drive from 1.8 V/3.3 V MCUs without level-shifting circuitry
Halogen-free & RoHS-compliant	Meets IEC 61249-2-21 and Directive 2002/95/EC - qualified for consumer, medical, and industrial end-equipment

Applications

Battery-Powered Load Switch	Step-Down DC/DC Converter
Use Scenario: Enabling/disabling power to Bluetooth modules or sensors in wearables during sleep mode. IC Role / Device Role / Timing Role: Low-side or high-side load switch controlling V_BAT delivery with minimal quiescent current. Use Value: 1 µA I_DSS and 0.036 Ω R_DS(on) limit standby loss to <10 µW and active loss to <730 mW at 4.5 A.	Use Scenario: High-efficiency synchronous rectifier in 3.3 V or 5 V buck converters for FPGA core supplies. IC Role / Device Role / Timing Role: Low-side synchronous FET operating at 1–2 MHz with fast 10–15 ns turn-off delay. Use Value: 7 nC Q_g and 830 pF C_iss enable low gate drive loss and stable control loop response.
USB-C Power Delivery Switch	Portable LED Driver Control
Use Scenario: Input protection and hot-swap control for 20 V USB-C PD power paths in portable monitors. IC Role / Device Role / Timing Role: High-side switch with 30 V V_DS margin and fast 20–30 ns t_d(off) for fault isolation. Use Value: 30 V rating provides 2× safety margin over 20 V PD profiles; 0.039 Ω R_DS(on) at 4.5 V ensures <800 mW loss at 4.5 A.	Use Scenario: PWM dimming control of high-brightness white LEDs in handheld projectors. IC Role / Device Role / Timing Role: Low-side LED current switch driven by MCU PWM with <15 ns rise/fall time. Use Value: Fast switching minimizes PWM dead-time distortion; 0.8–1.2 V V_SD ensures predictable current sink behavior during off-state.

Battery-Powered Load Switch

Step-Down DC/DC Converter

Use Scenario: Enabling/disabling power to Bluetooth modules or sensors in wearables during sleep mode.

IC Role / Device Role / Timing Role: Low-side or high-side load switch controlling V_BAT delivery with minimal quiescent current.

Use Value: 1 µA I_DSS and 0.036 Ω R_DS(on) limit standby loss to <10 µW and active loss to <730 mW at 4.5 A.

Use Scenario: High-efficiency synchronous rectifier in 3.3 V or 5 V buck converters for FPGA core supplies.

IC Role / Device Role / Timing Role: Low-side synchronous FET operating at 1–2 MHz with fast 10–15 ns turn-off delay.

Use Value: 7 nC Q_g and 830 pF C_iss enable low gate drive loss and stable control loop response.

USB-C Power Delivery Switch

Portable LED Driver Control

Use Scenario: Input protection and hot-swap control for 20 V USB-C PD power paths in portable monitors.

IC Role / Device Role / Timing Role: High-side switch with 30 V V_DS margin and fast 20–30 ns t_d(off) for fault isolation.

Use Value: 30 V rating provides 2× safety margin over 20 V PD profiles; 0.039 Ω R_DS(on) at 4.5 V ensures <800 mW loss at 4.5 A.

Use Scenario: PWM dimming control of high-brightness white LEDs in handheld projectors.

IC Role / Device Role / Timing Role: Low-side LED current switch driven by MCU PWM with <15 ns rise/fall time.

Use Value: Fast switching minimizes PWM dead-time distortion; 0.8–1.2 V V_SD ensures predictable current sink behavior during off-state.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN3025LSD-13	30 V, 0.025 Ω @ 10 V, SO-8 package (5×6 mm), higher R_thJA = 62 °C/W	Requires larger PCB area; better for higher-power, lower-frequency use cases	Select when >4.5 A current or >1 W dissipation demands larger thermal mass and layout flexibility
SI2308DS-T1-GE3	30 V, 0.042 Ω @ 4.5 V, SOT-23-3 package (same footprint but 3-pin, single drain/source)	Limited to ≤3.5 A continuous; no dual-source/dual-drain optimization	Select only for ultra-low-cost, low-current (<3 A) load switches where gate charge and thermal performance are secondary

Compared with DMN3025LSD-13 and SI2308DS-T1-GE3, the SIA408DJ-T1-GE3 uniquely balances ultra-compact size, 4.5 A capability, and 7 nC gate charge in a thermally optimized 6-pin leadless package - making it optimal for high-density, battery-operated DC/DC and load-switch designs where board space and efficiency are co-constrained.

Availability

SIA408DJ-T1-GE3 is available at Aetrix Electronics and suitable for battery-powered load switching, portable DC/DC converters, and USB-C power path management requiring stable component supply and long-term production continuity.

Supply support for SIA408DJ-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on high reliability and thermal performance.

The SIA408DJ-T1-GE3 belongs to Vishay's TrenchFET® PowerPAK® SC-70 family, engineered specifically for space-constrained, high-efficiency portable power management where low R_DS(on), fast switching, and minimal footprint are critical.

FAQ

What is the maximum continuous drain current rating for SIA408DJ-T1-GE3 at 70 °C case temperature?

The SIA408DJ-T1-GE3 supports 4.5 A continuous drain current at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This rating is limited by package thermal resistance (R_thJC = 5.5 °C/W typ.) and junction temperature cap of 150 °C. Derating curves confirm no reduction below 4.5 A until T_C exceeds 70 °C - making SIA408DJ-T1-GE3 suitable for thermally demanding portable applications without forced cooling.

Does SIA408DJ-T1-GE3 require a gate resistor for reliable 1 MHz switching in a DC/DC converter?

Yes - while the SIA408DJ-T1-GE3 has low Q_g (7 nC @ 4.5 V), a 1–5 Ω gate resistor is recommended to damp ringing and control dV/dt during 1 MHz operation. The device's R_g = 0.6–6 Ω (typ./max) and fast t_r/t_f (10–15 ns) make it susceptible to oscillation without proper gate drive impedance matching. Using a 2.2 Ω resistor with a 3.3 V MCU driver ensures stable turn-on/turn-off timing and EMI control in SIA408DJ-T1-GE3-based buck regulators.

Can SIA408DJ-T1-GE3 be used in high-side configuration with 5 V gate drive?

Yes - the SIA408DJ-T1-GE3 is rated for V_GS = ±12 V and exhibits R_DS(on) = 0.039 Ω at V_GS = 4.5 V, confirming robust enhancement-mode operation at 5 V drive. In high-side configurations, ensure gate drive voltage is referenced to the source (not ground), and verify that the bootstrap or isolated gate driver can sustain ≥5 V above the switched node during conduction. The SIA408DJ-T1-GE3's 1.6 V max V_GS(th) guarantees full enhancement under these conditions.

What is the thermal resistance from junction to ambient (R_thJA) for SIA408DJ-T1-GE3 on a standard FR4 PCB?

The SIA408DJ-T1-GE3 has R_thJA = 29 °C/W (typ.) and 37 °C/W (max) when mounted on a 1" × 1" FR4 board per Vishay test condition (Note b). This value assumes no additional copper pour or thermal vias. With 1 oz. copper and 4 thermal vias under the exposed drain pad, R_thJA improves to ~22–25 °C/W. Always use the 37 °C/W max value for worst-case junction temperature calculation: T_J = T_A + P_D × 37.

Is SIA408DJ-T1-GE3 pin-compatible with other PowerPAK SC-70-6L MOSFETs like SiA445DJ?

No - although both SIA408DJ-T1-GE3 and SiA445DJ use the PowerPAK SC-70-6L package, their pinouts differ: SIA408DJ-T1-GE3 assigns pins 1–3 to Drain, pin 4 to Gate, and pins 5–6 to Source; SiA445DJ uses pins 1–2 for Drain, pin 3 for Gate, and pins 4–6 for Source. PCB layout must be verified against each device's specific marking diagram and datasheet. Interchanging them without redesign will cause functional failure or damage.

SIA408DJ-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: PowerPAK® SC-70-6

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 4.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 2.5V, 10V

Rds On (Max) @ Id, Vgs:: 36mOhm @ 5.3A, 10V

Vgs(th) (Max) @ Id:: 1.6V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 24 nC @ 10 V

Vgs (Max):: ±12V

Input Capacitance (Ciss) (Max) @ Vds:: 830 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 3.4W (Ta), 17.9W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® SC-70-6

SIA408DJ-T1-GE3 FAQ

1.How can I place an order for SIA408DJ-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIA408DJ-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIA408DJ-T1-GE3 reliable?

The price and inventory of SIA408DJ-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIA408DJ-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SIA408DJ-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIA408DJ-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIA408DJ-T1-GE3?

SIA408DJ-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIA408DJ-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIA408DJ-T1-GE3?

For technical support, including SIA408DJ-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIA408DJ-T1-GE3 requirements.

6.How does Aetrix verify that SIA408DJ-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SIA408DJ-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIA408DJ-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SIA408DJ-T1-GE3?

All SIA408DJ-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIA408DJ-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIA408DJ-T1-GE3 part is unused and in its original packaging.

Return procedure for SIA408DJ-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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