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Vishay Siliconix SIA413ADJ-T1-GE3
- Part No.:
- SIA413ADJ-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SC-70-6
- Datasheet:
-
SIA413ADJ-T1-GE3.pdf
- Description:
- MOSFET P-CH 12V 12A PPAK SC70-6
- Quantity:
- Payment:
- Shipping:
Inventory:2,900
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Product details
Overview
SIA413ADJ-T1-GE3 from Vishay Siliconix is a P-channel enhancement-mode MOSFET designed for high-efficiency load switching in space-constrained portable electronics. It features -12 V drain-source rating, 0.024 Ω typical RDS(on) at VGS = -4.5 V, -12 A continuous drain current (TC = 25 °C), and thermally enhanced PowerPAK® SC-70-6L package - enabling compact battery protection and power-path control in smartphones and wearables.
For engineers reviewing the SIA413ADJ-T1-GE3 datasheet, SIA413ADJ-T1-GE3 pinout, SIA413ADJ-T1-GE3 application, or SIA413ADJ-T1-GE3 equivalent, key selection criteria include low gate charge (23 nC at VGS = -4.5 V), robust body diode performance (trr = 40 ns), and thermal resistance (RthJA = 28 °C/W typ.) for reliable operation under pulsed load conditions.
Technical Context
This device operates as a single P-channel switch with gate threshold voltage of -0.4 V to -1.0 V and exhibits strong transconductance (gfs = 30 S typ.), supporting fast turn-on/turn-off transitions. Its trench-based structure delivers low on-resistance while maintaining stable performance across -55 °C to +150 °C junction temperature range.
The PowerPAK SC-70-6L package integrates dual-drain terminals (Pins 2, 4) and dual-source terminals (Pins 1, 7), enabling optimized current distribution and reduced PCB trace resistance. Thermal design leverages bottom-side copper exposure for direct heatsinking, with RthJC = 5.3 °C/W (typ.) to the drain pad.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -12 V - Maximum reverse-blocking capability for 3.3 V–5 V logic-controlled battery switches |
| RDS(on) @ VGS = -4.5 V | 0.024 Ω (typ.) - Enables <100 mW conduction loss at 2 A load current |
| Qg | 23 nC (typ.) - Supports efficient PWM switching up to ~1 MHz with low gate drive power |
| ID (continuous) | -12 A @ TC = 25 °C - Sustains full-rated current when mounted on thermally adequate PCB copper |
| trr | 40 ns (typ.) - Minimizes body diode recovery losses during synchronous rectification or reverse-current blocking |
| RthJA | 28 °C/W (typ.) - Allows ~3.5 W dissipation at 25 °C ambient without forced airflow |
| VGS(th) | -0.4 V to -1.0 V - Ensures reliable turn-on with standard 1.8 V or 2.5 V logic-level gate drivers |
Pinout & Package
Package: PowerPAK® SC-70-6L - 2.05 mm × 2.05 mm leadless surface-mount package with exposed drain paddle for thermal and electrical performance. Bottom-side copper termination enables low-inductance, high-current routing.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 7 | Source (S) | Common source connection; dual pins reduce bond-wire resistance and improve current sharing |
| 2, 4 | Drain (D) | Primary current path to load; dual pins connect directly to exposed drain paddle for minimal thermal impedance |
| 3 | Gate (G) | Control input; requires no external pull-down due to negative VGS(th); sensitive to ESD (±8 V max) |
| 6 | Source (S) | Secondary source terminal - electrically tied to Pins 1 and 7 internally; used for Kelvin sensing or layout symmetry |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® technology | Enables ultra-low RDS(on) in sub-2 mm² footprint, reducing board area by >40% vs. SO-8 equivalents |
| PowerPAK SC-70-6L package | Thermally optimized layout with dual-drain/dual-source terminals lowers effective RDS(on) and improves power cycling reliability |
| Low Qg/Qgd ratio | Qgd = 6.5 nC / Qg = 23 nC → ~28% - enhances switching efficiency and reduces Miller-induced shoot-through risk |
| Body diode trr & Qrr | trr = 40 ns, Qrr = 20 nC - supports efficient reverse-current handling in load-switch and OR-ing applications |
| Lead (Pb)-free & halogen-free | Complies with RoHS Directive 2011/65/EU and JEDEC JS709E - suitable for consumer and medical portable devices |
Applications
| Smartphone Battery Protection | Wireless Earbud Power Management |
|---|---|
|
Use Scenario: Isolating main Li-ion battery from system during charging, fault, or shutdown. IC Role / Device Role / Timing Role: High-side load switch controlling power path between battery and PMIC. Use Value: Low RDS(on) minimizes voltage drop (<30 mV @ 1.2 A), preserving battery runtime; fast turn-off prevents fault propagation. |
Use Scenario: Enabling/disabling charging circuitry and audio subsystems in ultra-compact earbuds. IC Role / Device Role / Timing Role: P-channel switch managing power domains to meet strict size and leakage budgets. Use Value: Sub-1 μA IDSS at VDS = -12 V ensures <10 nA standby leakage per switch, extending shelf life. |
| USB-C Port Power Delivery Switching | Portable Medical Sensor Power Gating |
|
Use Scenario: Controlling VBUS path in USB-C receptacles to support reversible plug insertion and fault isolation. IC Role / Device Role / Timing Role: Bidirectional load switch with integrated body diode for VBUS clamping and reverse-current blocking. Use Value: Body diode VSD = -0.8 V (typ.) limits forward drop during hot-plug events; trr < 60 ns avoids cross-conduction in PD negotiation. |
Use Scenario: Power-gating analog front-end sensors (ECG, SpO₂) between measurements to meet FDA-required low-power idle states. IC Role / Device Role / Timing Role: Precision on/off control of sensor supply rail with minimal quiescent current impact. Use Value: Gate threshold centered at -0.7 V allows clean switching with 1.8 V GPIO; low Ciss = 1800 pF avoids signal coupling into sensitive analog nodes. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel load switch applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SiA445DJ-T1-GE3 | -20 V VDS, higher RDS(on) (0.042 Ω @ -4.5 V), same PowerPAK SC-70-6L package | Better overvoltage margin for 12 V systems; trade-off is 45% higher conduction loss at 2 A | Select when system must tolerate transient spikes beyond ±12 V or require extended lifetime under elevated stress |
| DMN2053LFG-7 | -20 V VDS, 0.035 Ω RDS(on) @ -4.5 V, X2-DFN1006-3 package (smaller, 1.0 mm × 0.6 mm) | Smaller footprint but lower current rating (-4.5 A) and higher RthJA (125 °C/W) | Prefer for ultra-miniature designs where peak current ≤ 3 A and thermal budget permits higher junction rise |
Compared with SiA445DJ-T1-GE3 and DMN2053LFG-7, the SIA413ADJ-T1-GE3 delivers optimal balance of low on-resistance, proven thermal performance in production-grade portable layouts, and compatibility with standard 0.65 mm pitch SC-70 reflow profiles - making it the preferred choice for 5–12 A battery-switch applications where board area and efficiency are co-constrained.
Availability
SIA413ADJ-T1-GE3 is available at Aetrix Electronics and suitable for smartphone battery protection, wireless earbud power management, and USB-C port power delivery requiring stable component supply, long-term lifecycle assurance, and full traceability.
Supply support for SIA413ADJ-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on efficiency, miniaturization, and reliability.
The SIA413ADJ-T1-GE3 belongs to Vishay's TrenchFET® PowerPAK® SC-70 family, engineered specifically for space- and power-sensitive load-switching in portable consumer electronics where thermal density and gate-drive simplicity are critical.
FAQ
What is the maximum continuous drain current rating for SIA413ADJ-T1-GE3 at 70 °C case temperature?
The SIA413ADJ-T1-GE3 supports -12 A continuous drain current at TC = 70 °C, as specified in the Absolute Maximum Ratings table. This rating assumes proper PCB copper area and thermal vias to maintain case temperature - not ambient temperature - and reflects the device's ability to sustain full load under moderate thermal conditions without derating.
Does SIA413ADJ-T1-GE3 require a gate driver IC for 1.8 V microcontroller GPIO control?
No, the SIA413ADJ-T1-GE3 does not require an external gate driver when driven by 1.8 V GPIO. Its gate threshold voltage range (-0.4 V to -1.0 V) ensures full enhancement at VGS = -1.8 V, delivering RDS(on) ≤ 0.044 Ω. However, slew rate control via a small series gate resistor (e.g., 10 Ω) is recommended to limit dI/dt and suppress ringing.
How does the PowerPAK SC-70-6L package of SIA413ADJ-T1-GE3 improve thermal performance versus standard SC-70?
The SIA413ADJ-T1-GE3 uses the enhanced PowerPAK SC-70-6L variant - not standard SC-70 - featuring an exposed drain paddle and dual-drain/dual-source terminals. This achieves RthJC = 5.3 °C/W (typ.), nearly 3× better than conventional SC-70 packages, enabling higher power density and longer operational life in thermally constrained portable PCBs.
Can SIA413ADJ-T1-GE3 be used in bidirectional current applications such as USB-C OR-ing?
Yes, the SIA413ADJ-T1-GE3 supports bidirectional current flow due to its intrinsic body diode and symmetrical P-channel structure. In USB-C OR-ing, it blocks reverse current when off (VGS = 0 V) and conducts forward current with VSD = -0.8 V (typ.) when biased - provided external logic manages gate control to prevent shoot-through during state transitions.
What is the total gate charge (Qg) of SIA413ADJ-T1-GE3 at VGS = -4.5 V, and how does it affect switching loss?
The SIA413ADJ-T1-GE3 has Qg = 23 nC (typ.) at VGS = -4.5 V. At 1 MHz PWM frequency and 4.5 V gate drive, this results in average gate drive power of ~104 μW - negligible compared to conduction losses. The low Qg enables fast switching (td(on) = 20 ns) while minimizing overlap loss in hard-switched topologies.
SIA413ADJ-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- PowerPAK® SC-70-6
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 12 V
- Current - Continuous Drain (Id) @ 25°C:
- 12A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 1.5V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 29mOhm @ 6.7A, 4.5V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 57 nC @ 8 V
- Vgs (Max):
- ±8V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1800 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 19W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SC-70-6 Single
SIA413ADJ-T1-GE3 FAQ
1.How can I place an order for SIA413ADJ-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIA413ADJ-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIA413ADJ-T1-GE3 reliable?
The price and inventory of SIA413ADJ-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIA413ADJ-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SIA413ADJ-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIA413ADJ-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIA413ADJ-T1-GE3?
SIA413ADJ-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIA413ADJ-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIA413ADJ-T1-GE3?
For technical support, including SIA413ADJ-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIA413ADJ-T1-GE3 requirements.
6.How does Aetrix verify that SIA413ADJ-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SIA413ADJ-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIA413ADJ-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SIA413ADJ-T1-GE3?
All SIA413ADJ-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIA413ADJ-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIA413ADJ-T1-GE3 part is unused and in its original packaging.
Return procedure for SIA413ADJ-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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