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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIA430DJ-T1-GE3

Name: SIA430DJ-T1-GE3
Brand: Vishay Siliconix
SKU: SIA430DJ-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIA430DJ-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® SC-70-6

Datasheet:: SIA430DJ-T1-GE3.pdf

Description:: MOSFET N-CH 20V 12A PPAK SC70-6

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Product details

Overview

SIA430DJ-T1-GE3 from Vishay Siliconix is an N-channel 20 V (D-S) TrenchFET® Power MOSFET in a thermally enhanced PowerPAK® SC-70 package, delivering R_DS(on) = 0.0135 Ω at V_GS = 10 V and 7 A, 0.0185 Ω at V_GS = 4.5 V and 5 A, with 5.3 nC total gate charge - optimized for high-efficiency load switching in space-constrained DC/DC and battery-powered systems.

For engineers reviewing the SIA430DJ-T1-GE3 datasheet, SIA430DJ-T1-GE3 pinout, SIA430DJ-T1-GE3 application, or SIA430DJ-T1-GE3 equivalent, this device offers verified thermal performance (R_thJA = 28 °C/W typ.), robust body diode recovery (t_rr = 18–30 ns), and Pb-free/halogen-free compliance per ordering code GE3 - critical for portable power management and USB-C PD load control designs.

Technical Context

This MOSFET employs trench-gate silicon technology to achieve low on-resistance and fast switching with minimal gate charge. Its PowerPAK SC-70-6L package integrates exposed-drain thermal pads and a 6-pin single-die layout enabling efficient heat transfer from drain to PCB copper.

The device supports logic-level drive (V_GS(th) = 1–3 V) and operates reliably across -55 °C to +150 °C junction temperature. Its body diode exhibits V_SD = 0.8–1.2 V at I_S = 5 A and Q_rr = 7–15 nC, making it suitable for synchronous rectification and bidirectional current paths where reverse recovery behavior impacts efficiency.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	20 V - Maximum drain-source blocking voltage; defines safe operating range in 5 V–12 V rail switching applications.
R_DS(on) @ V_GS = 10 V	0.0135 Ω - Enables ≤1.3 W conduction loss at 10 A continuous drain current under heatsinked conditions.
R_DS(on) @ V_GS = 4.5 V	0.0185 Ω - Ensures stable on-state performance with 3.3 V or 5 V logic-level gate drivers without level shifting.
Q_g (total)	5.3 nC - Low gate charge reduces driver power demand and switching losses in high-frequency (>1 MHz) DC/DC converters.
I_D (continuous, T_C = 25 °C)	12 A - Supports high-current load switching when mounted on ≥1" × 1" FR4 with adequate copper area.
R_thJA (t ≤ 5 s)	28 °C/W (typ.) - Confirmed thermal resistance enables accurate transient power derating in pulsed-load scenarios.
t_rr (body diode)	18–30 ns - Fast reverse recovery minimizes shoot-through risk and improves efficiency in synchronous buck or OR-ing configurations.

Pinout & Package

PowerPAK® SC-70-6L-Single package: 2.05 mm × 2.05 mm footprint, leadless, thermally enhanced with exposed drain pads on bottom side. Compatible with standard reflow profiles (peak 260 °C); manual soldering not recommended.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4 (Drain)	Drain (D)	Four parallel drain terminals connected internally; provide low-inductance, high-current path and primary thermal conduction to PCB.
5 (Gate)	Gate (G)	Control terminal; accepts logic-level input; requires <5.3 nC charge for full enhancement; sensitive to ESD (±20 V rating).
6 (Source)	Source (S)	Reference node for gate drive and current return; connects to system ground or low-side switch node; forms body diode anode.

Key Features

Feature	Design Value
TrenchFET® silicon process	Delivers industry-leading R_DS(on) × area ratio for ultra-compact 20 V switching in SC-70 footprint.
Thermally enhanced PowerPAK SC-70	Exposes drain metal on bottom surface to enable direct thermal coupling to PCB copper, reducing R_thJA by >30% vs. standard SC-70.
Low gate charge (Q_g = 5.3 nC)	Reduces gate driver power loss and allows use of low-cost microcontroller GPIOs or integrated PMIC drivers without external buffers.
Logic-level V_GS(th) (1–3 V)	Ensures full enhancement with 3.3 V or 4.5 V supply rails - eliminates need for gate boosters in portable and USB-PD applications.
Fast body diode (t_rr = 18–30 ns)	Enables reliable operation in synchronous rectifier and reverse-current protection circuits without external Schottky diodes.

Applications

USB-C Power Delivery Load Switch	Portable Device Battery Protection
Use Scenario: High-side load switch controlling 5–20 V power delivery to USB-C accessories with overcurrent and thermal shutdown requirements. IC Role / Device Role / Timing Role: N-channel MOSFET used as active high-side switch with external gate driver; handles up to 12 A continuous load current. Use Value: Low R_DS(on) minimizes voltage drop and self-heating during sustained 3 A–10 A loads; compact SC-70 size saves board space in thin-profile dongles.	Use Scenario: Reverse-current and overcurrent protection between Li-ion battery packs and system power rails in wearables and medical monitors. IC Role / Device Role / Timing Role: Low-side current-sense switch placed between battery cathode and system ground; controlled by protection IC. Use Value: Fast t_rr and low Q_rr prevent latch-up during hot-plug events; V_GS(th) tolerance ensures consistent turn-on across battery voltage range (3.0–4.4 V).
DC/DC Converter Synchronous Rectifier	Industrial Sensor Node Power Gating
Use Scenario: Secondary-side synchronous rectifier in isolated 12 V input → 3.3 V output flyback converter for industrial IoT gateways. IC Role / Device Role / Timing Role: N-channel MOSFET replacing Schottky diode; driven by transformer-coupled or controller-based gate signal. Use Value: R_DS(on) = 0.0185 Ω at 4.5 V gate drive cuts conduction loss by >40% vs. 0.4 V Schottky; Q_g = 5.3 nC enables clean turn-off timing.	Use Scenario: Power gating of RF transceivers and MEMS sensors in battery-operated environmental monitoring nodes. IC Role / Device Role / Timing Role: Low-quiescent-current load switch isolating subsystems during sleep mode; controlled by MCU GPIO. Use Value: Ultra-low I_DSS (<1 µA) and IGSS (±100 nA) ensure <1 µA leakage in off-state; small footprint fits within 3 mm × 3 mm sensor module layout.

USB-C Power Delivery Load Switch

Portable Device Battery Protection

Use Scenario: High-side load switch controlling 5–20 V power delivery to USB-C accessories with overcurrent and thermal shutdown requirements.

IC Role / Device Role / Timing Role: N-channel MOSFET used as active high-side switch with external gate driver; handles up to 12 A continuous load current.

Use Value: Low R_DS(on) minimizes voltage drop and self-heating during sustained 3 A–10 A loads; compact SC-70 size saves board space in thin-profile dongles.

Use Scenario: Reverse-current and overcurrent protection between Li-ion battery packs and system power rails in wearables and medical monitors.

IC Role / Device Role / Timing Role: Low-side current-sense switch placed between battery cathode and system ground; controlled by protection IC.

Use Value: Fast t_rr and low Q_rr prevent latch-up during hot-plug events; V_GS(th) tolerance ensures consistent turn-on across battery voltage range (3.0–4.4 V).

DC/DC Converter Synchronous Rectifier

Industrial Sensor Node Power Gating

Use Scenario: Secondary-side synchronous rectifier in isolated 12 V input → 3.3 V output flyback converter for industrial IoT gateways.

IC Role / Device Role / Timing Role: N-channel MOSFET replacing Schottky diode; driven by transformer-coupled or controller-based gate signal.

Use Value: R_DS(on) = 0.0185 Ω at 4.5 V gate drive cuts conduction loss by >40% vs. 0.4 V Schottky; Q_g = 5.3 nC enables clean turn-off timing.

Use Scenario: Power gating of RF transceivers and MEMS sensors in battery-operated environmental monitoring nodes.

IC Role / Device Role / Timing Role: Low-quiescent-current load switch isolating subsystems during sleep mode; controlled by MCU GPIO.

Use Value: Ultra-low I_DSS (<1 µA) and IGSS (±100 nA) ensure <1 µA leakage in off-state; small footprint fits within 3 mm × 3 mm sensor module layout.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 20 V load switch applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiA442DJ-T1-GE3	R_DS(on) = 0.0115 Ω @ 10 V (lower), Q_g = 6.2 nC (higher), same PowerPAK SC-70-6L package.	Better conduction loss but higher switching loss; suited for lower-frequency, high-current apps where gate drive strength is available.	Select SiA442DJ-T1-GE3 only if R_DS(on) reduction outweighs added gate drive burden and cost premium.
DMN2020LFG-7	R_DS(on) = 0.022 Ω @ 4.5 V, Q_g = 4.5 nC, PowerDI™ 3330 package (3.3 mm × 3.3 mm - larger than SC-70).	Higher on-resistance but lower gate charge and more robust thermal pad; better for hand-soldered prototypes or higher-power derating.	Choose DMN2020LFG-7 when board space allows larger footprint and manual rework capability is required.

Compared with SiA442DJ-T1-GE3 and DMN2020LFG-7, the SIA430DJ-T1-GE3 strikes optimal balance between low R_DS(on), moderate Q_g, and minimal footprint - making it preferred for high-density, battery-sensitive designs where thermal constraints and gate drive capability are tightly coupled.

Availability

SIA430DJ-T1-GE3 is available at Aetrix Electronics and suitable for USB-C power delivery modules, portable battery protection circuits, and industrial sensor node power gating requiring stable component supply, RoHS-compliant sourcing, and lead-free/halogen-free manufacturing compliance.

Supply support for SIA430DJ-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, and optoelectronics with emphasis on power efficiency, thermal performance, and reliability across automotive, industrial, and computing markets.

The PowerPAK SC-70 family was designed to deliver high-current capability in sub-3 mm² footprints for space-constrained portable and battery-powered systems - directly addressing the need for low-R_DS(on), logic-level drive, and thermal-aware packaging in modern power management ICs.

FAQ

What is the maximum continuous drain current for SIA430DJ-T1-GE3 at 70 °C case temperature?

The SIA430DJ-T1-GE3 supports 12 A continuous drain current at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This rating assumes proper PCB copper area (1" × 1" FR4) and accounts for thermal derating beyond ambient conditions - critical for sustained load-switch operation in enclosed enclosures.

Does SIA430DJ-T1-GE3 require a gate resistor for typical 3.3 V MCU GPIO drive?

Yes, a gate resistor (typically 10–47 Ω) is recommended with 3.3 V MCU GPIO drive to control slew rate and prevent ringing, even though the SIA430DJ-T1-GE3 has low Q_g (5.3 nC). The device's 2.5 Ω gate resistance and fast switching (t_r/t_f ≈ 8–15 ns) make external damping necessary to avoid EMI and overshoot in compact layouts.

Can SIA430DJ-T1-GE3 be used in a high-side configuration with bootstrap gate drive?

No - the SIA430DJ-T1-GE3 is an N-channel MOSFET and cannot be directly bootstrapped in high-side configuration without a dedicated high-side driver IC or charge pump. It is intended for low-side switching or high-side use with external level-shifting gate drivers; its V_GS rating of ±20 V does not support floating gate bias generation.

What is the body diode forward voltage of SIA430DJ-T1-GE3 at 5 A source current?

The body diode forward voltage (V_SD) of SIA430DJ-T1-GE3 is 0.8–1.2 V at I_S = 5 A and V_GS = 0 V, as measured per the Drain-Source Body Diode Characteristics section. This range reflects variation across temperature and production lot, and must be accounted for in OR-ing or reverse-polarity protection designs.

Is SIA430DJ-T1-GE3 suitable for automotive applications per AEC-Q101?

No - the SIA430DJ-T1-GE3 is not AEC-Q101 qualified. While it operates across -55 °C to +150 °C junction temperature, Vishay documents it for industrial and consumer applications only. For automotive-grade equivalents, consult Vishay's AEC-Q101-qualified PowerPAK SO-8 or TrenchFET Gen IV families.

SIA430DJ-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: PowerPAK® SC-70-6

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 12A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 13.5mOhm @ 7A, 10V

Vgs(th) (Max) @ Id:: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 18 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 800 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 3.5W (Ta), 19.2W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® SC-70-6

SIA430DJ-T1-GE3 FAQ

1.How can I place an order for SIA430DJ-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIA430DJ-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIA430DJ-T1-GE3 reliable?

The price and inventory of SIA430DJ-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIA430DJ-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SIA430DJ-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIA430DJ-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIA430DJ-T1-GE3?

SIA430DJ-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIA430DJ-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIA430DJ-T1-GE3?

For technical support, including SIA430DJ-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIA430DJ-T1-GE3 requirements.

6.How does Aetrix verify that SIA430DJ-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SIA430DJ-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIA430DJ-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SIA430DJ-T1-GE3?

All SIA430DJ-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIA430DJ-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIA430DJ-T1-GE3 part is unused and in its original packaging.

Return procedure for SIA430DJ-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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