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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIB488DK-T1-GE3

Name: SIB488DK-T1-GE3
Brand: Vishay Siliconix
SKU: SIB488DK-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIB488DK-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® SC-75-6

Datasheet:: SIB488DK-T1-GE3.pdf

Description:: MOSFET N-CH 12V 9A PPAK SC75-6

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Product details

Overview

SIB488DK-T1-GE3 from Vishay Siliconix is an N-channel 12 V TrenchFET® MOSFET in PowerPAK® SC-75-6L package, delivering 9 A continuous drain current at T_C = 25 °C, R_DS(on) = 0.020 Ω at V_GS = 4.5 V, and 7.5 nC total gate charge - optimized for load switching in portable battery-powered devices.

For engineers reviewing the SIB488DK-T1-GE3 datasheet, SIB488DK-T1-GE3 pinout, SIB488DK-T1-GE3 application, or SIB488DK-T1-GE3 equivalent, key selection criteria include low-voltage gate drive compatibility (1.8 V–4.5 V), thermally enhanced leadless packaging, and body diode recovery performance (t_rr = 15–30 ns) in high-frequency DC-DC and power-path switching roles.

Technical Context

This device uses trench-gate MOSFET architecture to achieve low R_DS(on) with fast switching dynamics: C_iss = 725 pF, C_oss = 195 pF, and Q_gd = 0.8 nC enable efficient operation in >1 MHz DC-DC converters. Its V_GS(th) range (0.4–1.0 V) supports direct logic-level drive from 1.8 V and 2.5 V controllers.

Thermal design is constrained by R_thJC = 7.5 °C/W (typ.) and R_thJA = 41 °C/W (typ.) on FR4; the PowerPAK SC-75-6L's exposed-drain thermal pad requires controlled reflow per IPC-J-STD-020, with no manual soldering recommended due to leadless construction.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	12 V - maximum blocking voltage compatible with single-cell Li-ion and USB PD 3.0 auxiliary rails
R_DS(on)	0.020 Ω @ V_GS = 4.5 V - enables <180 mW conduction loss at 9 A, critical for portable thermal budget
I_D (cont)	9 A @ T_C = 25 °C - package-limited current rating suitable for compact load switches
Q_g	7.5 nC @ V_GS = 4.5 V - low gate charge supports efficient 1–3 MHz switching without excessive driver loss
V_GS(th)	0.4–1.0 V - ensures turn-on with 1.8 V I/O domains and avoids false triggering in noisy environments
t_rr	15–30 ns - fast body diode recovery reduces shoot-through risk in synchronous buck topologies
R_thJC	7.5 °C/W (typ.) - enables direct thermal coupling to PCB copper for passive cooling in space-constrained layouts

Pinout & Package

PowerPAK® SC-75-6L-Single: 1.60 mm × 1.60 mm × 0.55 mm leadless package with exposed drain paddle; six terminals arranged in dual-row configuration (3+3), optimized for high-current density and thermal dissipation.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3	Drain (D)	Three parallel drain terminals connected to internal die drain and exposed thermal pad - must be soldered to large PCB copper area for thermal and current handling
4	Gate (G)	Single gate input with R_g = 0.5–2.5 Ω - low impedance supports fast edge rates with minimal external gate resistor
5, 6	Source (S)	Two source terminals tied to source metallization - reduce loop inductance in high-di/dt switching paths

Key Features

Feature	Design Value
TrenchFET® architecture	Enables 0.020 Ω R_DS(on) at 4.5 V while maintaining robust 12 V breakdown margin
PowerPAK SC-75-6L package	Reduces footprint by >50% vs. SO-8 while improving thermal resistance by 3× over comparable SOT-23 devices
100 % R_g tested	Guarantees gate resistance ≤2.5 Ω - eliminates variability in switching speed and EMI across production lots
Halogen-free & RoHS compliant	Fulfills IEC 61249-2-21 and Directive 2002/95/EC - required for consumer electronics export to EU, Japan, and China
V_GS = 1.8 V drive capability	Supports direct interface with ultra-low-voltage microcontrollers and PMICs without level-shifting circuitry

Applications

Portable Load Switching	RF Power Amplifier Switching
Use Scenario: Enabling/disabling power to camera modules, USB peripherals, or display backlights in smartphones and tablets. IC Role / Device Role: Low-side load switch controlling 3.3–5 V rail delivery with minimal voltage drop and fast turn-off to prevent leakage. Use Value: 0.020 Ω R_DS(on) limits dropout to <180 mV at 9 A, preserving battery runtime and enabling precise power gating.	Use Scenario: Antenna switching and PA bias control in LTE/Wi-Fi front-end modules requiring sub-100 ns transition times. IC Role / Device Role: High-speed RF switch isolating transmit/receive paths with low insertion loss and high isolation. Use Value: 7.5 nC Q_g and 15 ns t_rr ensure clean signal routing with minimal distortion during TDD transitions.
Battery Protection Circuits	High-Frequency DC-DC Converters
Use Scenario: Reverse-current blocking and overcurrent cutoff in single-cell Li-ion battery packs for wearables and IoT sensors. IC Role / Device Role: Back-to-back configured N-channel switch providing bidirectional current control and fault isolation. Use Value: V_GS(th) = 0.4–1.0 V allows precise threshold setting with external resistors; body diode V_SD = 0.8–1.2 V minimizes forward drop during protection events.	Use Scenario: Synchronous rectification in 1–2 MHz buck converters powering SoCs and FPGAs in portable computing. IC Role / Device Role: Low-side synchronous rectifier replacing Schottky diodes to improve efficiency above 1 A load. Use Value: 0.020 Ω R_DS(on) cuts conduction loss by >60% vs. 0.5 V Schottky, directly increasing light-load efficiency by 3–5%.

Portable Load Switching

RF Power Amplifier Switching

Use Scenario: Enabling/disabling power to camera modules, USB peripherals, or display backlights in smartphones and tablets.

IC Role / Device Role: Low-side load switch controlling 3.3–5 V rail delivery with minimal voltage drop and fast turn-off to prevent leakage.

Use Value: 0.020 Ω R_DS(on) limits dropout to <180 mV at 9 A, preserving battery runtime and enabling precise power gating.

Use Scenario: Antenna switching and PA bias control in LTE/Wi-Fi front-end modules requiring sub-100 ns transition times.

IC Role / Device Role: High-speed RF switch isolating transmit/receive paths with low insertion loss and high isolation.

Use Value: 7.5 nC Q_g and 15 ns t_rr ensure clean signal routing with minimal distortion during TDD transitions.

Battery Protection Circuits

High-Frequency DC-DC Converters

Use Scenario: Reverse-current blocking and overcurrent cutoff in single-cell Li-ion battery packs for wearables and IoT sensors.

IC Role / Device Role: Back-to-back configured N-channel switch providing bidirectional current control and fault isolation.

Use Value: V_GS(th) = 0.4–1.0 V allows precise threshold setting with external resistors; body diode V_SD = 0.8–1.2 V minimizes forward drop during protection events.

Use Scenario: Synchronous rectification in 1–2 MHz buck converters powering SoCs and FPGAs in portable computing.

IC Role / Device Role: Low-side synchronous rectifier replacing Schottky diodes to improve efficiency above 1 A load.

Use Value: 0.020 Ω R_DS(on) cuts conduction loss by >60% vs. 0.5 V Schottky, directly increasing light-load efficiency by 3–5%.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiB487DK-T1-GE3	Same package and pinout; R_DS(on) = 0.024 Ω @ 4.5 V (20% higher), Q_g = 6.8 nC	Slightly lower efficiency at high current; better suited for cost-sensitive, lower-power loads	Select when marginal R_DS(on) increase is acceptable and gate charge reduction is prioritized
DMN10H7TIS-13	PowerDI 3333 package (2.0 × 2.0 mm); R_DS(on) = 0.018 Ω @ 4.5 V, Q_g = 8.2 nC, V_DS = 10 V	Smaller voltage margin; requires layout revision due to different footprint and thermal pad geometry	Choose only if 10 V rating suffices and board space allows larger package

Compared with SiB487DK-T1-GE3 and DMN10H7TIS-13, the SIB488DK-T1-GE3 delivers optimal balance of low R_DS(on), low Q_g, and 12 V rating in the smallest possible footprint - making it preferred for next-generation portable power switches where thermal density and gate drive simplicity are critical.

Availability

SIB488DK-T1-GE3 is available at Aetrix Electronics and suitable for portable load switching, RF PA switching, battery protection circuits, and high-frequency DC-DC converters requiring stable component supply and consistent lead-free/halogen-free compliance.

Supply support for SIB488DK-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, and optoelectronics with emphasis on power efficiency, reliability, and miniaturization.

The PowerPAK SC-75 family was engineered for ultra-compact, high-current switching in battery-powered systems - targeting mobile, wearable, and space-constrained embedded applications where thermal performance and gate-drive simplicity are decisive.

FAQ

What is the maximum continuous drain current rating for SIB488DK-T1-GE3 at 70 °C case temperature?

The SIB488DK-T1-GE3 supports 9 A continuous drain current at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This rating is package-limited and assumes proper PCB thermal management per the PowerPAK SC-75 layout guidelines. At ambient temperature (T_A = 25 °C), the continuous current drops to 7.2 A due to higher junction-to-ambient thermal resistance.

Does SIB488DK-T1-GE3 support 1.8 V logic-level gate drive?

Yes, the SIB488DK-T1-GE3 is fully characterized for 1.8 V gate drive: R_DS(on) = 0.029 Ω at V_GS = 1.8 V and I_D = 2.5 A. Its V_GS(th) range of 0.4–1.0 V ensures reliable turn-on with 1.8 V I/O standards, eliminating need for gate drivers in many portable applications.

What is the thermal resistance from junction to case (R_thJC) for SIB488DK-T1-GE3?

The SIB488DK-T1-GE3 has a typical junction-to-case (drain) thermal resistance of 7.5 °C/W, with a maximum of 9.5 °C/W. This value is measured under steady-state conditions with the exposed drain paddle soldered to a 1" × 1" FR4 board - critical for estimating junction temperature rise in real-world PCB layouts.

Can SIB488DK-T1-GE3 be used in synchronous rectification applications?

Yes, the SIB488DK-T1-GE3 is suitable for synchronous rectification in high-frequency DC-DC converters. Its low R_DS(on) (0.020 Ω), fast body diode recovery (t_rr = 15–30 ns), and low Q_gd (0.8 nC) minimize conduction and switching losses - especially beneficial in 1–2 MHz buck converters powering portable SoCs.

Is manual soldering recommended for SIB488DK-T1-GE3?

No, manual soldering with a soldering iron is not recommended for the SIB488DK-T1-GE3. As a leadless PowerPAK SC-75-6L device, it requires controlled reflow per IPC-J-STD-020 profile. The exposed copper tip of the drain terminals does not guarantee a visible solder fillet, but adequate bottom-side interconnection is achieved via proper reflow parameters and pad design.

SIB488DK-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: PowerPAK® SC-75-6

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 12 V

Current - Continuous Drain (Id) @ 25°C:: 9A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 1.8V, 4.5V

Rds On (Max) @ Id, Vgs:: 20mOhm @ 6.3A, 4.5V

Vgs(th) (Max) @ Id:: 1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 20 nC @ 8 V

Vgs (Max):: ±8V

Input Capacitance (Ciss) (Max) @ Vds:: 725 pF @ 6 V

FET Feature:: -

Power Dissipation (Max):: 2.4W (Ta), 13W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® SC-75-6

SIB488DK-T1-GE3 FAQ

1.How can I place an order for SIB488DK-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIB488DK-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIB488DK-T1-GE3 reliable?

The price and inventory of SIB488DK-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIB488DK-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SIB488DK-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIB488DK-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIB488DK-T1-GE3?

SIB488DK-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIB488DK-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIB488DK-T1-GE3?

For technical support, including SIB488DK-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIB488DK-T1-GE3 requirements.

6.How does Aetrix verify that SIB488DK-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SIB488DK-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIB488DK-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SIB488DK-T1-GE3?

All SIB488DK-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIB488DK-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIB488DK-T1-GE3 part is unused and in its original packaging.

Return procedure for SIB488DK-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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