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Vishay Siliconix SIC620ARCD-T1-GE3
- Part No.:
- SIC620ARCD-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- Full Half-Bridge (H Bridge) Drivers
- Package:
- PowerPAK® MLP55-31L
- Datasheet:
-
SIC620ARCD-T1-GE3.pdf
- Description:
- IC HALF BRIDGE DRIVER 60A PPAK
- Quantity:
- Payment:
- Shipping:
Inventory:3,785
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Product details
Overview
SIC620ARCD-T1-GE3 from Vishay Siliconix is a 60 A VRPower® integrated power stage (DrMOS) combining high-side and low-side MOSFETs with an advanced gate driver IC in a single thermally enhanced PowerPAK® MLP55-31L package. It delivers up to 60 A continuous current per phase, supports 3.3 V PWM logic, features zero-current detect for light-load efficiency, and is optimized for synchronous buck converters in CPU/GPU VRD applications.
For engineers reviewing the SIC620ARCD-T1-GE3 datasheet, SIC620ARCD-T1-GE3 pinout, SIC620ARCD-T1-GE3 application, or SIC620ARCD-T1-GE3 equivalent, key selection criteria include 3.3 V PWM compatibility, thermal warning flag (THWn), adaptive dead-time control, and 1.5 MHz maximum switching frequency - all critical for multi-phase high-density voltage regulator design.
Technical Context
The SIC620ARCD-T1-GE3 integrates Vishay's Gen IV TrenchFET® MOSFETs with an on-die gate driver featuring tri-state PWM support, adaptive shoot-through protection, and integrated bootstrap Schottky diode. Its 3.3 V logic thresholds (VTH_PWM_R = 2.2–2.7 V, VTH_PWM_F = 0.72–1.1 V) ensure compatibility with modern low-voltage VR controllers.
It implements zero-current detection (ZCD_EN#) to disable the low-side FET at inductor current zero-crossing, reducing output capacitor discharge losses. Thermal monitoring is provided via open-drain THWn flag (set at 160 °C, cleared at 135 °C), enabling external thermal management without internal shutdown.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Continuous Output Current | 60 A at fS = 300 kHz, VIN = 12 V, VOUT = 1.8 V - enables single-phase support for high-current CPU core rails |
| Peak Efficiency | 95 % - reduces thermal load and improves system power density in compact VRD layouts |
| Max Switching Frequency | 1.5 MHz - allows smaller output inductors and faster transient response in high-performance computing applications |
| PWM Logic Voltage | 3.3 V compatible (rising threshold 2.2–2.7 V) - matches industry-standard low-voltage VR controller outputs |
| Thermal Warning Threshold | 160 °C junction temperature flag (THWn) with 25 °C hysteresis - provides early overtemperature alert without interrupting operation |
| Propagation Delay | < 20 ns PWM-to-GH/GL delay - preserves timing accuracy in high-frequency, multi-phase synchronized control |
| Package Thermal Resistance | RθJA = 10.6 °C/W, RθJC = 1.6 °C/W - supports high-power dissipation via double-sided cooling in MLP55-31L |
Pinout & Package
Package: PowerPAK® MLP55-31L (5 mm × 5 mm, 31-pin, thermally enhanced double-cooling structure with exposed top and bottom thermal pads).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| PWM | PWM control input | Accepts 3.3 V tri-state logic; hysteresis prevents false triggering during noise transients |
| ZCD_EN# | Zero-current detect enable | Active-low input enabling diode emulation mode to improve light-load efficiency |
| VCIN | Control logic supply | 4.5–5.5 V bias for internal state machine; includes UVLO (3.7 V rising, 3.1 V falling) |
| CGND | Analog ground reference | Separate ground for driver logic; must be connected to PGND at single point to minimize noise coupling |
| BOOT | Bootstrap supply node | Connects to external capacitor and PHASE pin; integrates Schottky diode to simplify layout |
| GH / GL | High-side / low-side gate drivers | Drive internal MOSFET gates; feature adaptive dead-time control to prevent shoot-through |
| VSWH | Switch node output | Power stage output connected to inductor; 31 parallel pins reduce resistance and inductance |
| THWn | Thermal warning flag | Open-drain output pulled to VCIN via ≤20 kΩ; signals TJ ≥ 160 °C for external thermal response |
| DSBL# | Global disable input | Active-low shutdown; internal pull-down ensures safe default state if left unconnected |
Key Features
| Feature | Design Value |
|---|---|
| Gen IV TrenchFET® MOSFETs | Reduced conduction and switching losses vs. prior generations, enabling 60 A in 5 mm × 5 mm footprint |
| Integrated Bootstrap Schottky Diode | Eliminates need for external bootstrap diode, simplifying PCB layout and improving reliability |
| Tri-State PWM Support | Enables seamless phase shedding in multi-phase VRDs without negative voltage spikes or external clamping |
| Adaptive Dead-Time Control | Dynamically adjusts timing based on gate voltage transitions, optimizing efficiency across load/temperature range |
| Double-Side Cooling Package | Thermally enhanced MLP55-31L allows heat extraction from both top and bottom surfaces for higher power density |
Applications
| CPU Core Voltage Regulation | GPU Power Delivery |
|---|---|
Use Scenario: Multi-phase buck converter supplying dynamic core voltage (0.7–1.5 V) to high-performance x86 or ARM processors under rapid load transients. IC Role / Device Role / Timing Role: Integrated power stage delivering up to 60 A per phase with sub-20 ns propagation delay to maintain tight phase synchronization. Use Value: Enables compact, high-efficiency VRD designs meeting Intel VR14/VR15 specifications with minimal external components. | Use Scenario: High-current power rail for discrete or integrated GPUs requiring fast transient response and thermal headroom under sustained compute loads. IC Role / Device Role / Timing Role: DrMOS device operating at up to 1.5 MHz switching frequency to reduce inductor size while maintaining >95 % peak efficiency. Use Value: Supports GPU power delivery with ZCD-enabled light-load efficiency and THWn-based thermal derating for reliable operation. |
| Server Memory Regulators | AI Accelerator Voltage Rails |
Use Scenario: DDR5 memory subsystem requiring tightly regulated 1.1 V supply with low noise and high current capability per channel. IC Role / Device Role / Timing Role: Single-phase VRPower stage delivering stable output with adaptive dead-time control to suppress EMI during high-speed memory access. Use Value: Achieves <10 mV output ripple and fast load-step response (<1 μs) due to low gate drive latency and optimized layout. | Use Scenario: Dedicated voltage rail for AI inference/training accelerators (e.g., TPUs, NPUs) demanding scalable multi-phase power with precise thermal monitoring. IC Role / Device Role / Timing Role: Phase-building block in 4–8 phase VRD with THWn flag feeding into centralized thermal management firmware. Use Value: Enables predictive thermal throttling and phase shedding using real-time junction temperature data without external sensors. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar integrated power stage applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SiC620RCD-T1-GE3 | 5 V PWM logic thresholds (VTH_PWM_R = 3.4–4.2 V); identical package, pinout, and thermal specs | Designed for legacy VR controllers with 5 V PWM outputs; not compatible with 3.3 V logic without level-shifting | Select SiC620RCD-T1-GE3 only when interfacing with 5 V PWM controllers; otherwise SIC620ARCD-T1-GE3 avoids external translation circuitry. |
| IR35201MTRPBF | 40 A rated, 3.3 V PWM compatible, but uses QFN-40 package with different pin assignment and no integrated bootstrap diode | Lacks double-side cooling and requires external bootstrap diode; lower current rating limits use in high-end CPU/GPU phases | Use IR35201MTRPBF only in space-constrained, lower-current applications where thermal budget permits higher RθJA. |
Compared with SiC620RCD-T1-GE3, SIC620ARCD-T1-GE3 eliminates level-shifting overhead for 3.3 V controllers; versus IR35201MTRPBF, it delivers +50 % current capacity, integrated bootstrap diode, and superior thermal performance in the same footprint - making it optimal for next-generation high-density VRDs.
Availability
SIC620ARCD-T1-GE3 is available at Aetrix Electronics and suitable for CPU voltage regulation, GPU power delivery, and AI accelerator voltage rails requiring stable component supply, long-term lifecycle support, and consistent parametric performance across production batches.
Supply support for SIC620ARCD-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors and passive components, specializing in high-reliability power MOSFETs, diodes, and integrated power solutions for demanding industrial and computing applications.
The VRPower® product line, including SIC620ARCD-T1-GE3, is engineered specifically for high-current, high-efficiency synchronous buck conversion in server, desktop, and AI hardware - emphasizing thermal robustness, signal integrity, and multi-phase scalability.
FAQ
What is the PWM logic voltage compatibility of the SIC620ARCD-T1-GE3?
The SIC620ARCD-T1-GE3 is designed for 3.3 V PWM logic with rising threshold of 2.2–2.7 V and falling threshold of 0.72–1.1 V. This eliminates the need for level-shifting circuitry when used with modern VR controllers. Its tri-state input supports phase shedding without negative voltage excursions. The SIC620ARCD-T1-GE3 also includes hysteresis to prevent noise-induced false triggering during transient conditions.
How does the SIC620ARCD-T1-GE3 implement thermal protection?
The SIC620ARCD-T1-GE3 features an open-drain thermal warning flag (THWn) that asserts at 160 °C junction temperature and clears at 135 °C, providing 25 °C hysteresis. It does not shut down autonomously; instead, it signals external thermal management systems to initiate corrective action. This design allows continuous operation during brief thermal excursions while enabling predictive throttling - a critical function for SIC620ARCD-T1-GE3 in high-performance computing environments.
Does the SIC620ARCD-T1-GE3 require an external bootstrap diode?
No, the SIC620ARCD-T1-GE3 integrates a bootstrap Schottky diode internally, eliminating the need for an external component. This simplifies PCB layout, reduces bill-of-materials count, and improves reliability by removing a potential failure point. The BOOT pin connects directly to an external capacitor tied to the PHASE pin, forming a complete charge-pump circuit - a key design advantage of the SIC620ARCD-T1-GE3 over discrete gate driver + MOSFET solutions.
What is the maximum continuous output current rating for the SIC620ARCD-T1-GE3?
The SIC620ARCD-T1-GE3 is rated for 60 A continuous output current under standard test conditions: fS = 300 kHz, VIN = 12 V, VOUT = 1.8 V, TA = 25 °C with natural convection cooling. At 1 MHz switching, the rating reduces to 50 A due to increased switching losses. This current capability is enabled by the thermally optimized PowerPAK® MLP55-31L package and Gen IV TrenchFET® technology - core attributes of the SIC620ARCD-T1-GE3 specification.
How does zero-current detection (ZCD) improve light-load efficiency in the SIC620ARCD-T1-GE3?
When ZCD_EN# is asserted low, the SIC620ARCD-T1-GE3 monitors inductor current via its internal comparator. Upon detecting zero crossing (after blanking delay), it turns off the low-side MOSFET, preventing reverse current flow and output capacitor discharge. This diode-emulation mode significantly improves light-load efficiency - a documented behavior confirmed in the SIC620ARCD-T1-GE3 datasheet efficiency curves - without requiring external sensing components.
SIC620ARCD-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- VRPower®
- Package/Case:
- PowerPAK® MLP55-31L
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Output Configuration:
- Half Bridge
- Applications:
- Synchronous Buck Converters
- Interface:
- PWM
- Load Type:
- Inductive
- Technology:
- Power MOSFET
- Rds On (Typ):
- -
- Current - Output / Channel:
- 60A
- Current - Peak Output:
- -
- Voltage - Supply:
- 4.5V ~ 5.5V
- Voltage - Load:
- 4.5V ~ 18V
- Operating Temperature:
- -40°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Features:
- Bootstrap Circuit, Diode Emulation, Status Flag
- Fault Protection:
- UVLO
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® MLP55-31L
SIC620ARCD-T1-GE3 FAQ
1.How can I place an order for SIC620ARCD-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIC620ARCD-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIC620ARCD-T1-GE3 reliable?
The price and inventory of SIC620ARCD-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIC620ARCD-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SIC620ARCD-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIC620ARCD-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIC620ARCD-T1-GE3?
SIC620ARCD-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIC620ARCD-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIC620ARCD-T1-GE3?
For technical support, including SIC620ARCD-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIC620ARCD-T1-GE3 requirements.
6.How does Aetrix verify that SIC620ARCD-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SIC620ARCD-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIC620ARCD-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SIC620ARCD-T1-GE3?
All SIC620ARCD-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIC620ARCD-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIC620ARCD-T1-GE3 part is unused and in its original packaging.
Return procedure for SIC620ARCD-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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