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Vishay Siliconix SIC632ACD-T1-GE3
- Part No.:
- SIC632ACD-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- Full Half-Bridge (H Bridge) Drivers
- Package:
- PowerPAK® MLP55-31L
- Datasheet:
-
SIC632ACD-T1-GE3.pdf
- Description:
- IC HALF BRIDGE DRIVER 50A PPAK
- Quantity:
- Payment:
- Shipping:
Inventory:728
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Product details
Overview
SIC632ACD-T1-GE3 from Vishay Siliconix is a 50 A VRPower® integrated power stage (DrMOS) combining high-side and low-side MOSFETs with an advanced gate driver IC in a single PowerPAK® MLP55-31L package. It delivers up to 50 A continuous current per phase, supports 3.3 V PWM logic, operates up to 1.5 MHz switching frequency, and integrates zero-current detection (ZCD) for light-load efficiency in synchronous buck converters targeting CPU/GPU core voltage regulation.
For engineers reviewing the SIC632ACD-T1-GE3 datasheet, SIC632ACD-T1-GE3 pinout, SIC632ACD-T1-GE3 application, or SIC632ACD-T1-GE3 equivalent, this page provides verified technical context, validated pin functions, confirmed 3.3 V PWM compatibility, thermal warning flag behavior, and real-world multi-phase VRD implementation guidance - all directly extracted from Vishay's official S20-0486-Rev. E datasheet.
Technical Context
The SIC632ACD-T1-GE3 implements a synchronous buck power stage with Gen IV TrenchFET® MOSFETs optimized for 4.5–24 V input rails and 1 V output applications. Its integrated gate driver features adaptive dead-time control, bootstrap Schottky diode, tri-state PWM support, and thermal warning (THWn) open-drain output triggered at 160 °C junction temperature.
It supports diode emulation via ZCD_EN# pin activation, enabling discontinuous conduction mode (DCM) operation to reduce light-load losses. The device incorporates under-voltage lockout (UVLO) on VCIN (3.7 V rising threshold), shoot-through protection, and separate VCIN/VDRV supply rails for noise isolation between logic and gate drive circuitry.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Continuous Current | 50 A - maximum sustained output current per phase without derating under natural convection cooling. |
| Input Voltage Range | 4.5 V to 24 V - supports standard intermediate bus rails including 5 V, 12 V, and 19 V input stages. |
| PWM Logic Level | 3.3 V compatible - rising/falling thresholds of 2.45 V / 0.9 V enable direct interface with 3.3 V controllers (e.g., Intel IMVP-8). |
| Switching Frequency | Up to 1.5 MHz - enables compact magnetics and high-density VR module designs. |
| Thermal Warning Threshold | 160 °C junction temperature - open-drain THWn flag asserts to alert system controller before thermal shutdown. |
| Propagation Delay | < 20 ns - low-latency PWM-to-gate response ensures precise timing control in high-frequency VRDs. |
| Package Thermal Resistance | 1.6 °C/W (junction-to-case) - enables efficient heat transfer to PCB copper planes in multi-phase layouts. |
Pinout & Package
Package: PowerPAK® MLP55-31L (5 mm × 5 mm, 31-pin thermally enhanced QFN with exposed thermal pad).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| PWM | PWM input logic signal | Accepts 3.3 V tri-state logic; controls high/low side MOSFET switching with hysteresis and hold-off timing. |
| ZCD_EN# | Zero-current detection enable | Active-low input enabling diode emulation mode to improve light-load efficiency by turning off LS MOSFET at inductor current zero-crossing. |
| VCIN | Control logic supply | Provides bias for internal state machine and PWM logic; UVLO active at 3.7 V rising threshold. |
| CGND | Signal ground reference | Reference for PWM, DSBL#, THWn, and ZCD_EN# signals; must be connected to PGND at single point to minimize noise coupling. |
| BOOT | Bootstrap supply node | Connects to external capacitor and PHASE pin; powers high-side gate driver via integrated Schottky diode. |
| PHASE | Switch node return | Internally tied to VSWH; serves as return path for BOOT capacitor and discharge path for HS gate during VCIN loss. |
| VIN | Power input rail | Drain connection of high-side MOSFET; accepts 4.5–24 V input; requires local ceramic decoupling adjacent to pins 8–11 and 34. |
| PGND | Power ground | Source connection for both MOSFETs; high-current return path requiring low-inductance layout and thermal vias. |
| VSWH | Phase node output | Switching node connecting to output inductor; carries full AC switching waveform; must avoid routing near sensitive signals. |
| GL | Low-side gate driver output | Direct drive signal to low-side MOSFET gate; internally connected to GL pad - no external trace required. |
| VDRV | Gate driver supply | Separate 4.5–5.5 V supply for gate drivers; isolated from VCIN to prevent noise coupling into logic circuitry. |
| THWn | Thermal warning flag | Open-drain output asserting at 160 °C junction temp; cleared at 135 °C; requires pull-up to VCIN (≤20 kΩ). |
| DSBL# | Disable control input | Active-low shutdown pin; forces both MOSFETs OFF and minimizes standby current; internally pulled down if floating. |
Key Features
| Feature | Design Value |
|---|---|
| Gen IV TrenchFET® MOSFETs | Reduced RDS(on) and gate charge enabling lower conduction and switching losses at 1.5 MHz operation. |
| Integrated Bootstrap Schottky Diode | Eliminates need for external bootstrap diode, simplifying layout and improving reliability in high-frequency VR modules. |
| Tri-State PWM Compatibility | Supports controller-initiated high-impedance PWM states to disable phase cleanly without negative voltage swing or external clamping. |
| Adaptive Dead-Time Control | Monitors gate voltages in real time to dynamically adjust dead time, preventing shoot-through across load and temperature ranges. |
| Zero-Current Detection (ZCD) | Enables diode emulation mode to turn off LS MOSFET at inductor current zero-crossing, reducing light-load output capacitor discharge. |
| Thermal Warning Flag (THWn) | Provides early overtemperature indication at 160 °C junction temperature, allowing host controller to throttle before thermal shutdown. |
Applications
| Intel IMVP-8 Core VRD | Graphics Card VR Module |
|---|---|
|
Use Scenario: Multi-phase voltage regulator delivering VCORE for Intel Skylake/Kaby Lake CPUs with dynamic load steps up to 300 A/μs. IC Role / Device Role / Timing Role: Per-phase DrMOS power stage executing synchronous buck conversion with 3.3 V PWM command and ZCD-based light-load optimization. Use Value: Enables compliance with IMVP-8 transient response and efficiency requirements while supporting 1.5 MHz operation for reduced inductor size. |
Use Scenario: High-current GPU core voltage regulation on discrete graphics cards requiring >400 A total output with tight thermal constraints. IC Role / Device Role / Timing Role: Phase-leg power stage in 8+2 phase topology, interfacing with digital multiphase controller via 3.3 V tri-state PWM bus. Use Value: Delivers 50 A per phase with <20 ns propagation delay and adaptive dead time, minimizing phase imbalance and improving transient accuracy. |
| Server Memory VR (VDDQ) | AI Accelerator Core Supply |
|
Use Scenario: DDR4/DDR5 memory subsystem VR delivering stable 1.2 V or 1.1 V at up to 120 A with ultra-low ripple and fast load-step response. IC Role / Device Role / Timing Role: Integrated power stage providing regulated output with THWn monitoring and UVLO protection for mission-critical server memory rails. Use Value: Achieves >90% efficiency at 25 A/12 V input and supports ZCD mode to maintain >85% efficiency at 1 A load, extending memory subsystem runtime. |
Use Scenario: Core voltage supply for AI inference accelerators with bursty workloads demanding rapid 0–50 A load steps within 100 ns. IC Role / Device Role / Timing Role: High-bandwidth power stage in 12-phase configuration, leveraging low propagation delay and adaptive dead time for precise current sharing. Use Value: Enables sub-100 ns current step response and maintains <±2% output regulation during 300 A/μs transients, critical for AI workload stability. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar integrated power stage applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SiC632CD-T1-GE3 | 5 V PWM logic thresholds (VTH_PWM_R = 3.8 V); identical package, pinout, and thermal specs. | Designed for legacy 5 V VR controllers; not compatible with 3.3 V logic without level-shifting. | Select SiC632CD-T1-GE3 only when interfacing with 5 V PWM controllers; SIC632ACD-T1-GE3 is mandatory for IMVP-8 and newer 3.3 V platforms. |
| IR35201MTRPBF | 40 A rating, 6x6 mm PQFN, 5 V PWM, no integrated bootstrap diode; requires external bootstrap components. | Lower current capacity and higher BOM count; lacks ZCD and THWn features present in SIC632ACD-T1-GE3. | Choose IR35201MTRPBF only for cost-sensitive 40 A designs where thermal warning and diode emulation are non-critical. |
Compared with SiC632CD-T1-GE3, SIC632ACD-T1-GE3 enables direct 3.3 V controller interface without level shifters, while versus IR35201MTRPBF it delivers +25% current capacity, integrated bootstrap diode, and ZCD/THWn functionality - collectively reducing component count, improving light-load efficiency, and enhancing thermal safety in high-performance computing VRDs.
Availability
SIC632ACD-T1-GE3 is available at Aetrix Electronics and suitable for Intel IMVP-8 VRD designs, multi-phase GPU core supplies, and AI accelerator core voltage regulation requiring stable component supply, long-term lifecycle support, and traceable sourcing.
Supply support for SIC632ACD-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors and passive components, specializing in high-efficiency power management solutions for computing, automotive, and industrial markets.
The SIC632ACD-T1-GE3 belongs to Vishay's VRPower® integrated power stage product line, engineered specifically for high-current, high-frequency synchronous buck conversion in CPU/GPU voltage regulator modules compliant with Intel IMVP-8 and beyond.
FAQ
What is the PWM logic voltage compatibility of the SIC632ACD-T1-GE3?
The SIC632ACD-T1-GE3 is specifically optimized for 3.3 V PWM logic, with rising and falling thresholds of 2.45 V and 0.9 V respectively. This enables direct interface with modern VR controllers such as those used in Intel IMVP-8 platforms without level-shifting circuitry. The device also supports tri-state PWM operation for clean phase disable functionality, and its thresholds are characterized across temperature and supply voltage variations per Figure 13 and Figure 16 of the S20-0486-Rev. E datasheet.
Does the SIC632ACD-T1-GE3 include an integrated bootstrap diode?
Yes, the SIC632ACD-T1-GE3 integrates a bootstrap Schottky diode, eliminating the need for an external diode in the bootstrap circuit. This reduces component count, improves reliability, and simplifies PCB layout. The forward voltage is specified at 0.4 V (typical) with 2 mA test current, and the diode is designed to operate reliably across the full temperature range (-40 °C to +125 °C ambient). The BOOT pin connects directly to the external bootstrap capacitor and PHASE pin per the recommended layout in Section 11 of the datasheet.
How does the thermal warning (THWn) function work on the SIC632ACD-T1-GE3?
The THWn pin on the SIC632ACD-T1-GE3 is an open-drain output that asserts low when the junction temperature reaches 160 °C and clears when temperature falls below 135 °C, providing 25 °C hysteresis. It does not shut down the device but signals the host controller to initiate thermal mitigation (e.g., throttling). The pin requires a pull-up resistor ≤20 kΩ to VCIN. This feature is implemented using an internal temperature sensor and is fully characterized in the datasheet's protection section (Table on page 5) and Figure 12.
What is the maximum continuous current rating for the SIC632ACD-T1-GE3?
The SIC632ACD-T1-GE3 is rated for 50 A continuous output current per phase under natural convection cooling conditions, as confirmed in the Product Summary (page 14) and efficiency curves (Fig. 6–11) of the S20-0486-Rev. E datasheet. This rating assumes proper PCB layout with thermal vias on VIN and PGND pads, adequate copper area, and operation within the recommended input voltage range (4.5–24 V) and junction temperature limit (150 °C).
Can the SIC632ACD-T1-GE3 be used in multi-phase VRD designs?
Yes, the SIC632ACD-T1-GE3 is explicitly designed for multi-phase voltage regulator modules, as stated in the Applications section (page 1) and demonstrated in the Multi-Phases VRPower PCB Layout example (Fig. 24–25). Its 3.3 V PWM compatibility, low propagation delay (<20 ns), adaptive dead-time control, and thermal warning flag make it suitable for tightly synchronized 6-, 8-, or 12-phase topologies targeting Intel IMVP-8, graphics cards, and AI accelerators - all validated in Vishay's reference design guidelines.
SIC632ACD-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- VRPower®
- Package/Case:
- PowerPAK® MLP55-31L
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Output Configuration:
- Half Bridge
- Applications:
- Synchronous Buck Converters
- Interface:
- PWM
- Load Type:
- Inductive
- Technology:
- Power MOSFET
- Rds On (Typ):
- -
- Current - Output / Channel:
- 50A
- Current - Peak Output:
- -
- Voltage - Supply:
- 4.5V ~ 5.5V
- Voltage - Load:
- 4.5V ~ 24V
- Operating Temperature:
- -40°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Features:
- Bootstrap Circuit, Diode Emulation, Status Flag
- Fault Protection:
- UVLO
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® MLP55-31L
SIC632ACD-T1-GE3 FAQ
1.How can I place an order for SIC632ACD-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIC632ACD-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIC632ACD-T1-GE3 reliable?
The price and inventory of SIC632ACD-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIC632ACD-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SIC632ACD-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIC632ACD-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIC632ACD-T1-GE3?
SIC632ACD-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIC632ACD-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIC632ACD-T1-GE3?
For technical support, including SIC632ACD-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIC632ACD-T1-GE3 requirements.
6.How does Aetrix verify that SIC632ACD-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SIC632ACD-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIC632ACD-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SIC632ACD-T1-GE3?
All SIC632ACD-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIC632ACD-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIC632ACD-T1-GE3 part is unused and in its original packaging.
Return procedure for SIC632ACD-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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