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Vishay Siliconix SIC639ACD-T1-GE3
- Part No.:
- SIC639ACD-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- Full Half-Bridge (H Bridge) Drivers
- Package:
- PowerPAK® MLP55-31L
- Datasheet:
-
SIC639ACD-T1-GE3.pdf
- Description:
- IC HALF BRIDGE DRIVER 50A PPAK
- Quantity:
- Payment:
- Shipping:
Inventory:2,801
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Product details
Overview
SIC639ACD-T1-GE3 from Vishay Siliconix is a 50 A VRPower® integrated power stage optimized for synchronous buck converters in high-density voltage regulator modules. It integrates Gen IV TrenchFET® MOSFETs, a high-current gate driver with adaptive dead-time control, zero-current detection (ZCD), thermal warning flag (THWn), and 3.3 V PWM logic compatibility - delivering up to 50 A continuous current per phase at input voltages from 2.7 V to 24 V for Intel IMVP-8/9 VCORE and VGRAPHICS rails.
For engineers reviewing the SIC639ACD-T1-GE3 datasheet, SIC639ACD-T1-GE3 pinout, SIC639ACD-T1-GE3 application, or SIC639ACD-T1-GE3 equivalent, key selection criteria include 3.3 V PWM threshold compatibility (VTH_PWM_R = 2.7 V), ZCD_EN#-enabled diode emulation mode, THWn open-drain thermal alert at 160 °C, and PowerPAK® MLP55-31L package thermal resistance (RθJA = 10.6 °C/W).
Technical Context
The SIC639ACD-T1-GE3 implements a monolithic synchronous buck power stage with integrated high-side and low-side MOSFETs, bootstrap Schottky diode, and gate driver IC. Its adaptive dead-time logic monitors GH/GL gate voltages to prevent shoot-through, while ZCD_EN# enables light-load efficiency improvement via inductor current zero-crossing detection.
It supports tri-state PWM logic with 1.38–1.95 V tri-state window and 250 mV rising hysteresis, operates up to 1.5 MHz switching frequency, and features under-voltage lockout (UVLO) on VCIN (3.7 V rising threshold) and thermal warning (THWn) with 25 °C hysteresis between 160 °C set and 135 °C clear points.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Continuous Current | 50 A - maximum sustained output per phase without derating under natural convection cooling |
| Input Voltage Range | 2.7 V to 24 V - supports 19 V input stage optimization and multi-rail VR applications including VCORE, VGRAPHICS, VCCGI |
| PWM Logic Compatibility | 3.3 V - rising threshold 2.7 V, falling threshold 0.72 V; enables direct interface with modern low-voltage VR controllers |
| Switching Frequency Max | 1.5 MHz - allows compact magnetics and high transient response in space-constrained computing platforms |
| Thermal Warning Threshold | 160 °C - open-drain THWn flag alerts system controller before thermal shutdown; clears at 135 °C |
| Propagation Delay | < 20 ns - ensures precise timing alignment between PWM input and gate drive outputs for stable high-frequency operation |
| Package Thermal Resistance | RθJA = 10.6 °C/W - enables high-power density designs with standard PCB copper area and thermal vias |
Pinout & Package
Package: PowerPAK® MLP55-31L (5 mm × 5 mm, 31-pin thermally enhanced QFN with exposed thermal pad).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| PWM | PWM input logic signal | Accepts 3.3 V tri-state logic; controls high-side/low-side MOSFET switching with hysteresis and hold-off timing |
| ZCD_EN# | Zero-current detection enable | Active-low input enabling diode emulation mode to improve light-load efficiency by turning off LS MOSFET at IL ≤ 0 |
| VCIN | Control logic supply | Bias for internal state machine; UVLO active at 3.7 V rising, 3.1 V falling |
| BOOT | Bootstrap capacitor node | Supplies high-side gate drive via integrated Schottky diode; requires external capacitor tied to PHASE |
| PHASE | Switch node return | Internally connected to VSWH; serves as BOOT capacitor reference and provides HS gate discharge path via 20 kΩ resistor |
| VIN | Power input rail | Drain connection of high-side MOSFET; supports up to 30 V DC absolute max, 24 V recommended operating max |
| PGND | Power ground | High-current return path for MOSFETs and inductor; must be externally tied to CGND with minimal inductance |
| CGND | Signal ground | Reference for VCIN, PWM, DSBL#, THWn; layout separation from PGND critical for noise immunity |
| GL | Low-side gate driver output | Direct drive signal to low-side MOSFET gate; internally connected to GL pad - no external trace required |
| VDRV | Gate driver supply | Provides bias for gate drivers; recommended 4.5–5.5 V; separate filtering from VCIN reduces noise coupling |
| THWn | Thermal warning flag | Open-drain output pulled low at TJ ≥ 160 °C; requires external pull-up to VCIN (≤20 kΩ) |
| DSBL# | Disable control | Active-low shutdown; disconnects PWM divider and minimizes standby current; internal pull-down if floating |
Key Features
| Feature | Design Value |
|---|---|
| Gen IV TrenchFET® MOSFETs | Reduces conduction and switching losses vs. prior generations, enabling >90% efficiency at 25 A/1 V out with 12.6 V in |
| Integrated bootstrap Schottky diode | Eliminates need for external bootstrap diode, simplifying layout and improving reliability in high-frequency operation |
| Adaptive dead-time control | Monitors GH/GL gate voltages in real time to dynamically adjust dead time and prevent shoot-through across load/temperature |
| Tri-state PWM support | Enables seamless phase disable during VR sleep states without negative output swing or external clamp diodes |
| Zero-current detection (ZCD) | Improves light-load efficiency by disabling low-side MOSFET when inductor current reaches zero, reducing capacitor discharge loss |
Applications
| Intel IMVP-8/9 VCORE Regulation | Graphics Card VRM (VGRAPHICS) |
|---|---|
Use Scenario: Regulating CPU core voltage on Skylake/Kaby Lake platforms with dynamic load steps up to 300 A across 6+ phases. IC Role / Device Role / Timing Role: Per-phase integrated power stage providing synchronized high-current buck conversion with sub-20 ns PWM propagation delay. Use Value: Enables tight voltage regulation (±10 mV) and fast transient response (< 5 μs) using 3.3 V PWM-compatible timing and adaptive dead time. | Use Scenario: Delivering stable 0.7–1.2 V GPU core voltage in discrete graphics cards with high peak current demands. IC Role / Device Role / Timing Role: High-density power stage supporting 1.5 MHz switching to minimize inductor size while maintaining >92% full-load efficiency. Use Value: Reduces board area by 30% vs. discrete MOSFET + driver solutions and improves thermal margin via RθJA = 10.6 °C/W. |
| VCCGI Rail for Apollo Lake | Multi-phase 24 V Input VR Modules |
Use Scenario: Powering SoC graphics and I/O interfaces in fanless embedded systems requiring low quiescent current and thermal robustness. IC Role / Device Role / Timing Role: Integrated power stage with ZCD_EN#-enabled diode emulation mode for >85% efficiency at 1 A load. Use Value: Eliminates need for external Schottky clamps and extends battery life in always-on compute applications. | Use Scenario: Industrial DC/DC VR modules converting 24 V intermediate bus to 1 V–3.3 V loads in networking and storage equipment. IC Role / Device Role / Timing Role: High-reliability power stage rated for 30 V absolute max VIN and 150 °C max junction temperature. Use Value: Supports long-term operation under sustained 50 A per phase with validated thermal relief via MLP55-31L exposed pad. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar integrated power stage applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SiC639CD-T1-GE3 | 5 V PWM logic optimized (VTH_PWM_R = 4.2 V); identical package, pinout, and thermal specs | Designed for legacy VR controllers with 5 V PWM outputs; not compatible with 3.3 V logic without level shifting | Select SiC639CD-T1-GE3 only when interfacing with 5 V PWM controllers; SIC639ACD-T1-GE3 is mandatory for 3.3 V native interfaces. |
| IR35201MTRPBF | Discrete driver + external MOSFETs; higher BOM count; no integrated bootstrap diode or ZCD | Requires external components for bootstrap, protection, and sensing; less compact than monolithic solution | Choose IR35201MTRPBF only when design requires independent MOSFET selection or higher-than-50 A scalability per phase. |
Compared with SiC639CD-T1-GE3, SIC639ACD-T1-GE3 enables direct 3.3 V PWM interface without level shifters, reducing component count and timing skew; versus IR35201MTRPBF, it delivers higher integration, lower layout sensitivity, and superior light-load efficiency via built-in ZCD and adaptive dead time.
Availability
SIC639ACD-T1-GE3 is available at Aetrix Electronics and suitable for Intel IMVP-8/9 VRMs, graphics card power delivery, and industrial 24 V input DC/DC modules requiring stable component supply, long-lifecycle support, and validated thermal performance.
Supply support for SIC639ACD-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors and passive components, specializing in high-efficiency power management solutions for computing, automotive, and industrial markets.
The SiC639A product line delivers VRPower® integrated power stages optimized for high-current, high-frequency synchronous buck regulation in next-generation CPU/GPU voltage regulator modules with strict space and thermal constraints.
FAQ
What is the PWM logic voltage compatibility of the SIC639ACD-T1-GE3?
The SIC639ACD-T1-GE3 is specifically optimized for 3.3 V PWM logic, with a rising threshold of 2.7 V and falling threshold of 0.72 V. It supports tri-state operation within a 1.38–1.95 V window and includes hysteresis to prevent false triggering. This eliminates the need for external level shifters when interfacing with modern VR controllers such as those used in Intel IMVP-9 platforms. The SIC639ACD-T1-GE3 differs from the 5 V-optimized SiC639CD-T1-GE3 in this key interface specification.
How does the ZCD_EN# pin improve light-load efficiency in the SIC639ACD-T1-GE3?
When ZCD_EN# is driven low, the SIC639ACD-T1-GE3 activates diode emulation mode: the low-side MOSFET is turned off when inductor current drops to zero or below, preventing reverse current flow and minimizing output capacitor discharge loss. This feature increases efficiency by up to 8% at 1–5 A loads compared to forced continuous conduction mode. The ZCD comparator operates independently of PWM state and remains active during tri-state periods, making it essential for energy-efficient mobile and embedded VR applications.
What thermal protection features does the SIC639ACD-T1-GE3 provide?
The SIC639ACD-T1-GE3 includes an open-drain thermal warning flag (THWn) that asserts low when junction temperature reaches 160 °C and clears at 135 °C, providing 25 °C hysteresis. It does not autonomously shut down - the flag signals an external controller to initiate thermal mitigation. Combined with RθJA = 10.6 °C/W and RθJC = 1.6 °C/W in the PowerPAK MLP55-31L package, this enables robust thermal management in multi-phase VRMs without derating at 50 A continuous current under natural convection.
Can the SIC639ACD-T1-GE3 be used in 24 V input applications?
Yes, the SIC639ACD-T1-GE3 supports a recommended operating input voltage range of 2.7 V to 24 V, with an absolute maximum rating of 30 V on VIN. It is qualified for use in 24 V intermediate bus VR modules, including industrial DC/DC converters and server VRMs. Designers must ensure proper input decoupling with multiple ceramic capacitors near VIN/PGND pins and verify thermal performance at full load using the MLP55-31L package's thermal vias and copper planes as specified in Vishay's PCB layout guidelines.
What is the function of the PHASE pin on the SIC639ACD-T1-GE3?
The PHASE pin on the SIC639ACD-T1-GE3 is internally connected to the switch node (VSWH) and serves exclusively as the return path for the external bootstrap capacitor. It must be tied directly to the BOOT pin through the capacitor - no other connections are permitted. An internal 20 kΩ resistor links the high-side gate (GH) to PHASE to safely discharge the HS MOSFET gate when VCIN is removed but VIN remains active, preventing unintended turn-on and ensuring safe power sequencing in the SIC639ACD-T1-GE3.
SIC639ACD-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- VRPower®
- Package/Case:
- PowerPAK® MLP55-31L
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Output Configuration:
- Half Bridge (2)
- Applications:
- Synchronous Buck Converters
- Interface:
- PWM
- Load Type:
- Inductive, Capacitive
- Technology:
- Power MOSFET
- Rds On (Typ):
- -
- Current - Output / Channel:
- 50A
- Current - Peak Output:
- -
- Voltage - Supply:
- 4.5V ~ 5.5V
- Voltage - Load:
- 4.5V ~ 5.5V
- Operating Temperature:
- -40°C ~ 125°C (TA)
- Grade:
- -
- Qualification:
- -
- Features:
- Bootstrap Circuit, Diode Emulation, Status Flag
- Fault Protection:
- Shoot-Through, UVLO
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® MLP55-31L
SIC639ACD-T1-GE3 FAQ
1.How can I place an order for SIC639ACD-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIC639ACD-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIC639ACD-T1-GE3 reliable?
The price and inventory of SIC639ACD-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIC639ACD-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SIC639ACD-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIC639ACD-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIC639ACD-T1-GE3?
SIC639ACD-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIC639ACD-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIC639ACD-T1-GE3?
For technical support, including SIC639ACD-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIC639ACD-T1-GE3 requirements.
6.How does Aetrix verify that SIC639ACD-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SIC639ACD-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIC639ACD-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SIC639ACD-T1-GE3?
All SIC639ACD-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIC639ACD-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIC639ACD-T1-GE3 part is unused and in its original packaging.
Return procedure for SIC639ACD-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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