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Vishay Siliconix SIC645ER-T1-GE3
- Part No.:
- SIC645ER-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- Full Half-Bridge (H Bridge) Drivers
- Package:
- 32-PowerWFQFN
- Datasheet:
-
SIC645ER-T1-GE3.pdf
- Description:
- IC HALF BRIDGE DRVR PWR MLP55-32
- Quantity:
- Payment:
- Shipping:
Inventory:3,145
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Product details
Overview
SIC645ER-T1-GE3 from Vishay Siliconix is a 60 A VRPower® Smart Power Stage (SPS) module integrating high-side and low-side MOSFETs, bootstrap FET, and high-performance gate drivers in a thermally enhanced dual-cooled PowerPAK® MLP55-32L package. It delivers ±3% current monitoring accuracy, 8 mV/°C temperature sensing, and supports up to 2 MHz switching for high-density multiphase DC/DC conversion in server CPU core regulators.
For engineers reviewing the SIC645ER-T1-GE3 datasheet, SIC645ER-T1-GE3 pinout, SIC645ER-T1-GE3 application, or SIC645ER-T1-GE3 equivalent, this page provides verified technical context, validated pin functions, confirmed thermal and current monitoring behavior, and real-world design implications for VRM/VRD systems requiring accurate phase current reporting and fault-resilient operation.
Technical Context
The SIC645ER-T1-GE3 implements a synchronous buck power stage with integrated tri-state PWM input compatible with 5 V logic, shoot-through protection via dead-time control, and internal bootstrap NFET replacing external diodes. Its current monitor (IMON) outputs a voltage referenced to REFIN with ±3% accuracy at ≥10 A, while TMON provides linear 8 mV/°C analog temperature output with over-temperature flag at +140 °C.
It features dedicated LGCTRL for forced low-side FET disable, open-drain FAULT# reporting for UVLO, over-temperature, HFET short, and 90 A over-current events, and supports multiphase coordination via common-bus TMON wiring. The device uses VCC/PVCC dual 5 V bias rails and operates across -40 °C to +125 °C junction temperature.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Continuous Current Rating | 60 A DC - defines maximum sustained output current without thermal derating under recommended PCB layout and airflow |
| Input Voltage Range | 4.5 V to 18 V VIN - supports standard 5 V, 12 V, and 15 V intermediate bus architectures |
| PWM Logic Compatibility | 5 V tri-state - enables direct interface with industry-standard 5 V multiphase controllers without level shifting |
| Current Monitor Accuracy | ±3 % at ≥10 A - eliminates need for external DCR sensing network and associated thermal compensation circuitry |
| Temperature Coefficient | 8 mV/°C - enables precise junction temperature tracking for dynamic thermal throttling in high-performance CPUs |
| Switching Frequency Max | 2 MHz - supports ultra-high-frequency operation for compact magnetics and fast transient response |
| HFET RDS(on) | 3.6 mΩ - reduces conduction loss in high-side switch during duty cycles >50% |
| LFET RDS(on) | 0.76 mΩ - minimizes conduction loss and improves light-load efficiency in synchronous rectification |
Pinout & Package
Dual cooled PowerPAK® MLP55-32L (5 mm × 5 mm, RoHS-compliant) with exposed thermal pad on underside for bottom-side cooling and optimized thermal resistance (θJA = 10.7 °C/W, θJC = 1.6 °C/W).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| LGCTRL | Lower gate control signal input | Forces GL low to disable LFET independently of PWM; must be driven or tied high-never left floating |
| VCC | +5 V logic bias supply | Powers internal logic and PWM interface; requires local 1 μF X7R ceramic decoupling to GND |
| PVCC | +5 V gate drive bias supply | Powers high-current gate drivers; requires separate 1 μF X7R ceramic decoupling to GND |
| GND (Pins 4, 6, 7, 8, 17–20, 29, 33–35) | Ground reference and thermal path | All internally connected; pins 4 and 29 must connect directly to GND paddles with maximal via count for thermal/electrical performance |
| VIN (Pins 21, 22, 23, 27, 34) | Power stage input (HFET drain) | Requires ≥2× 10 μF X5R/X7R ceramics near pins; pin 27 not used for decoupling; bottom-side VIN paddle needs dense via array |
| SW (Pins 9–16) | Switch node (HFET source / LFET drain) | Direct connection point to output inductor; carries full AC ripple current and must be routed with minimal loop area |
| BOOT | Floating bootstrap supply | Connects to PHASE via 0.1–0.22 μF X7R ceramic; powers upper gate driver during high-side conduction |
| FAULT# | Open-drain fault reporting output | Pulled low on any fault (UVLO, OT, OC, HFET short); used to disable controller enable or trigger system-level alert |
| PWM | 5 V tri-state PWM input | Accepts 5 V logic; tri-state window (1.6–2.8 V) forces both FETs off; timing-critical for multiphase synchronization |
| REFIN | External reference input for IMON | 0.8–1.6 V range sets IMON offset; connects to controller's current sense input; requires 0.1 μF local decoupling |
| IMON | Current monitor output | Voltage relative to REFIN; pulled to REFIN +1.2 V during over-current; ≤56 pF capacitance allowed directly to REFIN |
| TMON | Temperature monitor output | 0.6 V + 8 mV/°C analog output; multiple devices can share bus; pulled to 2.5 V during over-temperature |
Key Features
| Feature | Design Value |
|---|---|
| Integrated high-accuracy current monitor | ±3% IMON gain error enables elimination of DCR sensing networks and associated thermal drift compensation circuits |
| Dual 5 V bias architecture (VCC + PVCC) | Separates logic and gate drive supplies to prevent noise coupling and ensure robust driver turn-on under load transients |
| Internal bootstrap NFET | Replaces external bootstrap diode, reducing component count and improving reliability in high-frequency (>1 MHz) operation |
| Over-current protection with 90 A trip threshold | Hardware-based HFET current limit triggers immediate GH shutdown and IMON flag assertion without software intervention |
| Thermal monitoring with common-bus TMON | Enables multi-phase temperature arbitration using single-wire bus-highest reported TMON voltage reflects hottest phase |
| Tri-state PWM fault recovery | Controller can force safe shutdown by holding PWM in tri-state window (1.6–2.8 V), then resume normal operation on exit |
Applications
| Core Regulator for High-Performance CPUs | Graphics Voltage Regulator (GPU VR) |
|---|---|
|
Use Scenario: Delivering tightly regulated 0.8–1.35 V at up to 240 A to modern x86 and ARM server processors under dynamic workload. IC Role / Device Role / Timing Role: Smart power stage providing current/temperature telemetry and hardware fault response within multiphase VRM loop. Use Value: Enables precise per-phase current balancing and thermal-aware phase shedding without external sensing components. |
Use Scenario: Powering discrete GPUs in AI accelerators and high-end workstations where rapid load steps demand sub-100 ns transient response. IC Role / Device Role / Timing Role: High-frequency (up to 2 MHz) synchronous buck stage with integrated current feedback for closed-loop controller optimization. Use Value: Reduces output capacitance requirements by 30% versus discrete solutions due to accurate IMON-based current-mode control. |
| Memory Subsystem Regulator (DDR5/VDDQ) | Point-of-Load Converter for Networking ASICs |
|
Use Scenario: Supplying 1.1–1.8 V to DDR5 memory modules with strict ±15 mV regulation tolerance and high ripple rejection. IC Role / Device Role / Timing Role: Low-RDS(on) power stage (3.6 mΩ HS / 0.76 mΩ LS) minimizing conduction loss in high-current, low-voltage rails. Use Value: Achieves >95% peak efficiency at 40 A/1.2 V, reducing thermal density in memory DIMM slots and enabling higher bandwidth operation. |
Use Scenario: Providing 0.75–1.2 V to 100+ Gbps networking ASICs with stringent EMI limits and thermal constraints in compact line cards. IC Role / Device Role / Timing Role: Thermally enhanced dual-cooled module enabling top- and bottom-side heat extraction in constrained 1U chassis. Use Value: Maintains <125 °C junction temperature at 60 A with only 400 LFM airflow, eliminating need for additional heatsinks or fans. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar smart power stage applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SiC645AER-T1-GE3 | 3.3 V tri-state PWM input; identical package, pinout, and thermal/current specs | Designed for use with 3.3 V digital multiphase controllers (e.g., ISL99227B), not 5 V controllers | Select SiC645AER-T1-GE3 only when controller PWM output is 3.3 V logic; SIC645ER-T1-GE3 is required for 5 V PWM interfaces. |
| ISL99227BIRZ-T7A | 60 A smart power stage with 3.3 V PWM, integrated current/temperature monitors, but different pinout and no LGCTRL input | Lacks dedicated low-side control pin; uses different fault signaling scheme (nFAULT vs. FAULT#) and REFIN implementation | Use ISL99227BIRZ-T7A only in new designs targeting Renesas controllers; SIC645ER-T1-GE3 offers superior layout flexibility via LGCTRL and broader thermal operating range (-40 °C to +125 °C). |
Compared with SiC645AER-T1-GE3 and ISL99227BIRZ-T7A, the SIC645ER-T1-GE3 uniquely supports 5 V PWM logic without level shifters, includes LGCTRL for independent low-side disable, and maintains full feature parity across its extended temperature range-making it the preferred choice for legacy and industrial-grade 5 V controller ecosystems.
Availability
SIC645ER-T1-GE3 is available at Aetrix Electronics and suitable for high-density server VRMs, GPU power delivery, DDR5 memory regulators, and networking ASIC POL converters requiring stable component supply across extended temperature and long production lifecycles.
Supply support for SIC645ER-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors and passive components, specializing in high-efficiency power management solutions for computing, industrial, and automotive markets.
The SIC645ER-T1-GE3 belongs to Vishay's VRPower® Smart Power Stage family, engineered specifically for high-frequency, high-current multiphase DC/DC conversion in datacenter and AI infrastructure where accuracy, thermal resilience, and fault autonomy are critical.
FAQ
What is the PWM logic voltage compatibility of the SIC645ER-T1-GE3?
The SIC645ER-T1-GE3 supports 5 V tri-state PWM input with defined shutdown window (1.6–2.8 V). It is not compatible with 3.3 V PWM logic-use SiC645AER-T1-GE3 for that interface. The 5 V compatibility eliminates level-shifting components when paired with legacy or industrial multiphase controllers, simplifying BOM and layout. SIC645ER-T1-GE3's internal thresholds ensure robust noise immunity and deterministic tri-state detection across -40 °C to +125 °C.
How does the SIC645ER-T1-GE3 implement current monitoring without external sense resistors?
The SIC645ER-T1-GE3 performs downslope current sensing on the low-side FET and outputs a voltage on IMON referenced to the externally applied REFIN (0.8–1.6 V). This achieves ±3% accuracy at ≥10 A without DCR networks or shunt resistors. SIC645ER-T1-GE3's IMON directly interfaces with controller current-sense inputs, and its blanking time (~160 ns) ensures clean sampling after PWM transitions. No external compensation is needed.
What thermal protection features does the SIC645ER-T1-GE3 provide?
The SIC645ER-T1-GE3 integrates a linear temperature sensor with 8 mV/°C coefficient and over-temperature flag at +140 °C (rising) / +125 °C (falling). TMON output is valid 125 μs after VCC POR and supports multi-device bus wiring-highest voltage dominates. During over-temperature, TMON pulls to ~2.5 V and FAULT# goes low. SIC645ER-T1-GE3 resumes normal operation only after junction cools below +125 °C, ensuring safe thermal recovery.
Can the SIC645ER-T1-GE3 be used in single-phase designs?
Yes, the SIC645ER-T1-GE3 functions fully in single-phase configurations, delivering up to 60 A with integrated current/temperature telemetry and fault reporting. Its LGCTRL pin allows forced low-side disable for specialized control schemes, and FAULT# provides system-level fault signaling. However, its full value is realized in multiphase systems where TMON bus arbitration and IMON-based phase balancing improve overall VRM efficiency and thermal uniformity. SIC645ER-T1-GE3 requires no firmware or configuration changes between single- and multi-phase use.
What is the purpose of the LGCTRL pin on the SIC645ER-T1-GE3?
The LGCTRL pin on the SIC645ER-T1-GE3 provides direct hardware control of the low-side FET gate driver (GL). When pulled low, it forces GL low regardless of PWM state-effectively disabling the LFET and preventing shoot-through or uncontrolled conduction. This is critical during startup sequencing, fault recovery, or custom control algorithms. SIC645ER-T1-GE3 requires LGCTRL to be actively driven or tied high; leaving it floating causes undefined behavior. It is not present on competing devices like ISL99227B.
SIC645ER-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- VRPower®
- Package/Case:
- 32-PowerWFQFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Last Time Buy
- Output Configuration:
- Half Bridge
- Applications:
- Synchronous Buck Converters, Voltage Regulators
- Interface:
- PWM
- Load Type:
- Inductive
- Technology:
- NMOS
- Rds On (Typ):
- 0.76mOhm LS, 3.6mOhm HS
- Current - Output / Channel:
- -
- Current - Peak Output:
- -
- Voltage - Supply:
- 4.75 ~ 5.25V
- Voltage - Load:
- 4.5V ~ 18V
- Operating Temperature:
- -40°C ~ 125°C (TJ)
- Grade:
- -
- Qualification:
- -
- Features:
- Bootstrap Circuit, Status Flag
- Fault Protection:
- Current Limiting, Over Temperature, Shoot-Through, UVLO
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® MLP55-32 Double Cooling
SIC645ER-T1-GE3 FAQ
1.How can I place an order for SIC645ER-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIC645ER-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIC645ER-T1-GE3 reliable?
The price and inventory of SIC645ER-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIC645ER-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SIC645ER-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIC645ER-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIC645ER-T1-GE3?
SIC645ER-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIC645ER-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIC645ER-T1-GE3?
For technical support, including SIC645ER-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIC645ER-T1-GE3 requirements.
6.How does Aetrix verify that SIC645ER-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SIC645ER-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIC645ER-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SIC645ER-T1-GE3?
All SIC645ER-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIC645ER-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIC645ER-T1-GE3 part is unused and in its original packaging.
Return procedure for SIC645ER-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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