My Inquiry
My Account
Vishay Siliconix SIC652ACD-T1-GE3
- Part No.:
- SIC652ACD-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- Full Half-Bridge (H Bridge) Drivers
- Package:
- PowerPAK® MLP55-31L
- Datasheet:
-
SIC652ACD-T1-GE3.pdf
- Description:
- IC HALF BRIDGE DRIVER 55A PPAK
- Quantity:
- Payment:
- Shipping:
Inventory:1,038
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SIC652ACD-T1-GE3 from Vishay Siliconix is a 3.3 V PWM-optimized VRPower® integrated power stage for synchronous buck converters, delivering up to 55 A continuous current per phase with TrenchFET® MOSFETs, adaptive dead-time control, and PS4 standby mode. It targets Intel core processor VCORE/VGRAPHICS power delivery in multi-phase voltage regulator modules.
For engineers reviewing the SIC652ACD-T1-GE3 datasheet, SIC652ACD-T1-GE3 pinout, SIC652ACD-T1-GE3 application, or SIC652ACD-T1-GE3 equivalent, key selection criteria include 3.3 V tri-state PWM compatibility, ZCD_EN#-enabled diode emulation, thermal monitoring via TMON/FAULT, and PowerPAK® MLP55-31L package integration for high-density computing VRDs.
Technical Context
The SIC652ACD-T1-GE3 integrates a high-current gate driver with adaptive dead-time logic that monitors GH/GL gate voltages to prevent shoot-through, ensuring safe switching across load and temperature variations. Its zero-current detection (ZCD) circuitry operates asynchronously to PWM and enables discontinuous conduction mode under light loads.
This device implements dual UVLO protection (VCC and VBOOT), over-temperature flagging at 140 °C and shutdown at 165 °C, plus cycle-by-cycle high-side MOSFET short detection. The TMON/FAULT pin provides both analog temperature reporting (8 mV/°C gain) and digital fault signaling (high-active 3.3 V).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Continuous Current | 55 A per phase - defines maximum steady-state output capability in multi-phase VRMs |
| Input Voltage Range | 4.5 V to 24 V - supports 12 V and 19 V intermediate bus rails in CPU/GPU VR applications |
| PWM Logic Compatibility | 3.3 V tri-state - enables direct interface with modern VR controllers without level shifting |
| PS4 Mode Supply Current | 3 μA typical - meets ultrabook/notebook low-power standby requirements |
| Thermal Protection Threshold | 165 °C shutdown - prevents permanent damage during sustained overload or cooling failure |
| Over-Current Trip Level | 110 A peak - triggers early high-side turn-off and frequency foldback to protect MOSFETs |
| Bootstrap Switch RDS(on) | 3 Ω - minimizes charge pump losses and enables compact external capacitor selection |
Pinout & Package
Package: PowerPAK® MLP55-31L (5 mm × 5 mm, 31-pin, thermally enhanced QFN-style leadframe package with exposed thermal pad).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| PWM | Tri-state PWM input | Accepts 3.3 V logic; rising/falling thresholds at 2.45 V / 0.9 V enable precise phase control |
| ZCD_EN# | Zero-current detection enable | Active-low; floating state enables PS4 mode; threshold hysteresis prevents false triggering |
| BOOT | High-side gate driver bootstrap supply | Connects to external capacitor tied to PHASE; integrated 3 Ω switch eliminates external diode |
| VIN_S | Over-current sense input | Direct connection to VIN rail enables accurate high-side MOSFET current monitoring |
| PHASE | Switch node return for BOOT | Internally connected to VSWH; must be routed with low-inductance path to minimize ringing |
| VSWH | Power stage output node | 31-pin parallel connection to inductor; low-impedance path critical for EMI and efficiency |
| GL | Low-side gate drive output | Internal connection to GL pad; no external trace required - reduces layout complexity |
| TMON/FAULT | Temperature monitor & fault flag | Analog voltage (0.6 V @ 0 °C + 8 mV/°C) and open-drain fault signal (3.3 V active-high) |
| DSBL# | Active-low disable input | Pulls internal dividers offline; reduces supply current to 3 μA in PS4 mode when asserted |
| CGND / PGND | Analog & power ground | Must be externally joined with minimal inductance; >0.5 V transient difference risks misoperation |
Key Features
| Feature | Design Value |
|---|---|
| 3.3 V PWM-optimized logic thresholds | Enables direct interface with Intel VR13/VR14 controllers without level shifters or resistive dividers |
| Integrated bootstrap switch (3 Ω RDS(on)) | Eliminates external bootstrap diode, reducing BOM count and PCB area while improving reliability |
| PS4 mode with 3 μA shutdown current | Meets Intel ultrabook standby power budgets by disabling internal bias networks and dividers |
| Diode emulation with user-selectable ZCD_EN# | Improves light-load efficiency by turning off low-side MOSFET at zero inductor current crossing |
| Cycle-by-cycle high-side short detection | Triggers fault reporting after four consecutive HS short events, protecting downstream loads |
| Accurate thermal monitoring (±2.5 °C) | Enables real-time junction temperature tracking via TMON/FAULT analog output for dynamic throttling |
Applications
| Intel Core Processor VCORE Delivery | Graphics Card VRM (VGRAPHICS) |
|---|---|
|
Use Scenario: Multi-phase buck converter supplying 0.8–1.3 V to high-performance CPUs in desktops and servers. IC Role / Device Role / Timing Role: Integrated power stage providing gate drive, MOSFETs, and protection logic per phase; synchronized to VR controller PWM. Use Value: Delivers 55 A/phase with <97% efficiency at 500 kHz, enabling compact, high-current VRMs meeting Intel VR14 specifications. |
Use Scenario: High-current, fast-transient VRM powering discrete GPUs requiring sub-1 V output with <100 ns response. IC Role / Device Role / Timing Role: Phase-leg building block supporting tri-state PWM for phase shedding and adaptive dead time for noise reduction. Use Value: PS4 mode cuts standby power to 3 μA; ZCD_EN#-enabled diode emulation improves 1–5 A efficiency by 2–3% versus CCM-only operation. |
| Memory Subsystem (VCCSA/VDDQ) | 24 V Input DC/DC VR Module |
|
Use Scenario: Low-noise, high-efficiency VRM for DDR4/DDR5 memory subsystems requiring tight voltage regulation. IC Role / Device Role / Timing Role: Power stage handling 20–40 A per phase with precise thermal feedback via TMON/FAULT for system-level thermal management. Use Value: Over-temperature flag at 140 °C enables preemptive throttling before shutdown at 165 °C, preserving memory data integrity. |
Use Scenario: Industrial or networking equipment using 24 V intermediate bus for point-of-load conversion to 12 V, 5 V, or 3.3 V rails. IC Role / Device Role / Timing Role: High-voltage capable power stage (24 V max VIN) with robust UVLO (3.6 V VBOOT threshold) and 100 A peak pulse rating. Use Value: Supports up to 2 MHz switching; combined with 5 mm × 5 mm footprint, enables >1 kW/in³ power density in space-constrained modules. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar integrated power stage applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SiC652CD-T1-GE3 | 5 V PWM-optimized thresholds (VTH_R = 3.9 V); higher PS4 current (9 μA vs. 3 μA) | Targeted at legacy VR controllers with 5 V logic; less suitable for VR14+ systems requiring 3.3 V tri-state | Select only if existing design uses 5 V PWM interface and does not require ultra-low PS4 current. |
| IR35203MTRPBF | Separate driver + MOSFET architecture; 60 A rating; no integrated bootstrap switch | Requires external bootstrap diode and larger layout area; supports wider input range (up to 28 V) | Choose when higher input voltage margin or discrete component flexibility outweighs integration benefits. |
Compared with SiC652CD-T1-GE3, the SIC652ACD-T1-GE3 offers tighter 3.3 V PWM thresholds and lower PS4 current, making it optimal for next-gen mobile VRMs; versus IR35203MTRPBF, it trades layout flexibility for reduced BOM count and smaller footprint in space-constrained computing platforms.
Availability
SIC652ACD-T1-GE3 is available at Aetrix Electronics and suitable for Intel VCORE delivery, graphics card VRMs, and 24 V input DC/DC VR modules requiring stable component supply across production lifecycles.
Supply support for SIC652ACD-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors and integrated power solutions, specializing in high-efficiency, high-reliability components for computing, automotive, and industrial markets.
The SIC652ACD-T1-GE3 belongs to Vishay's VRPower® family of integrated power stages, designed specifically for high-current, high-frequency synchronous buck converters in CPU/GPU memory power delivery systems.
FAQ
What is the PWM logic voltage compatibility of the SIC652ACD-T1-GE3?
The SIC652ACD-T1-GE3 is optimized for 3.3 V tri-state PWM logic, with rising and falling thresholds at 2.45 V and 0.9 V respectively. It supports standard two-state (H/L) and advanced tri-state (H/L/high-Z) controllers without external level shifting. This distinguishes it from the 5 V-optimized SiC652CD-T1-GE3 variant, and ensures compatibility with Intel VR14-compliant controllers. The SIC652ACD-T1-GE3 also features hysteresis on all thresholds to prevent noise-induced mis-triggering.
How does the SIC652ACD-T1-GE3 implement PS4 low-power standby mode?
The SIC652ACD-T1-GE3 enters PS4 mode when both PWM and ZCD_EN# pins are left floating, causing internal circuitry to disconnect bias networks and reduce supply current to 3 μA typical. This ultra-low quiescent current meets Intel ultrabook standby requirements. DSBL# assertion reinforces this state, but is not required. The SIC652ACD-T1-GE3 exits PS4 mode within 5.5 μs (tPS4EXIT) upon valid PWM or ZCD_EN# activation, enabling rapid wake-up without compromising efficiency.
What protection features are integrated into the SIC652ACD-T1-GE3?
The SIC652ACD-T1-GE3 integrates over-current protection (trip at 110 A), over-temperature flagging (140 °C) and shutdown (165 °C), VCC/VBOOT UVLO (3.6–3.8 V thresholds), and cycle-by-cycle high-side MOSFET short detection. All faults are reported via the open-drain TMON/FAULT pin, which also provides analog temperature output (0.6 V + 8 mV/°C). The SIC652ACD-T1-GE3 uses adaptive dead-time control and shoot-through prevention logic to ensure safe switching under all load and temperature conditions.
Can the SIC652ACD-T1-GE3 be used in multi-phase VRMs with phase shedding?
Yes, the SIC652ACD-T1-GE3 supports phase shedding via its tri-state PWM input: when the controller drives PWM into high-impedance, the SIC652ACD-T1-GE3 disables both MOSFETs after a 30 ns hold-off time (tTSHO), eliminating negative voltage swing and eliminating need for Schottky clamps. All TMON/FAULT pins in a multi-phase bank are wire-OR'd to report the warmest device. The SIC652ACD-T1-GE3's 3.3 V logic and fast PS4 exit (<5.5 μs) make it ideal for dynamic phase-add/drop in modern CPU VRMs.
What is the thermal performance of the SIC652ACD-T1-GE3 in its PowerPAK® MLP55-31L package?
The SIC652ACD-T1-GE3 in the PowerPAK® MLP55-31L package achieves a thermal resistance of 1.6 °C/W from junction-to-case and 10.6 °C/W from junction-to-ambient (natural convection). Its exposed thermal pad must be soldered to a large copper plane with ≥8 thermal vias for optimal heat transfer. The integrated TMON/FAULT pin provides real-time junction temperature monitoring (±2.5 °C accuracy), enabling closed-loop thermal management in systems where the SIC652ACD-T1-GE3 operates continuously at 55 A.
SIC652ACD-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- VRPower®
- Package/Case:
- PowerPAK® MLP55-31L
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Output Configuration:
- Half Bridge
- Applications:
- General Purpose
- Interface:
- Logic, PWM
- Load Type:
- Inductive, Capacitive, Resistive
- Technology:
- Power MOSFET
- Rds On (Typ):
- -
- Current - Output / Channel:
- 55A
- Current - Peak Output:
- 100A
- Voltage - Supply:
- 4.5V ~ 5.5V
- Voltage - Load:
- 24V
- Operating Temperature:
- -40°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Features:
- Bootstrap Circuit, Diode Emulation
- Fault Protection:
- Over Current, Over Temperature, Shoot-Through, UVLO
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® MLP55-31L
SIC652ACD-T1-GE3 FAQ
1.How can I place an order for SIC652ACD-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIC652ACD-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIC652ACD-T1-GE3 reliable?
The price and inventory of SIC652ACD-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIC652ACD-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SIC652ACD-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIC652ACD-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIC652ACD-T1-GE3?
SIC652ACD-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIC652ACD-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIC652ACD-T1-GE3?
For technical support, including SIC652ACD-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIC652ACD-T1-GE3 requirements.
6.How does Aetrix verify that SIC652ACD-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SIC652ACD-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIC652ACD-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SIC652ACD-T1-GE3?
All SIC652ACD-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIC652ACD-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIC652ACD-T1-GE3 part is unused and in its original packaging.
Return procedure for SIC652ACD-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SIC652ACD-T1-GE3 Tags
-
NCP1393BDR2G
onsemi
-
A3909GLNTR-T
Allegro MicroSystems
-
NCP51530BDR2G
onsemi
-
A3909GLYTR-T
Allegro MicroSystems
-
SIC631CD-T1-GE3
Vishay Siliconix
-
BTN70301EPAXUMA1
Infineon Technologies
-
TDA21520AUMA1
Infineon Technologies
-
AOZ5116QI
Alpha & Omega Semiconductor Inc.
-
IRSM005-301MHTR
Infineon Technologies
-
IRSM005-301MH
Infineon Technologies
-
MP6610GJ-Z
Monolithic Power Systems Inc.
-
DRV8908QPWPRQ1
Texas Instruments
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
