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Vishay Siliconix SIC780ACD-T1-GE3
- Part No.:
- SIC780ACD-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- Full Half-Bridge (H Bridge) Drivers
- Package:
- PowerPAK® MLP66-40
- Datasheet:
-
SIC780ACD-T1-GE3.pdf
- Description:
- IC HALF BRIDGE DRIVER 50A PPAK
- Quantity:
- Payment:
- Shipping:
Inventory:2,925
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Product details
Overview
SIC780ACD-T1-GE3 from Vishay Siliconix is a 3.3 V logic-compatible integrated DrMOS power stage for high-current synchronous buck converters, delivering >50 A per phase with 93 % peak efficiency at 12 V input and 1.2 V output, featuring adaptive dead-time control, thermal warning (THDN), and diode emulation mode (SMOD) for light-load optimization in CPU/GPU VRDs.
For engineers reviewing the SIC780ACD-T1-GE3 datasheet, SIC780ACD-T1-GE3 pinout, SIC780ACD-T1-GE3 application, or SIC780ACD-T1-GE3 equivalent, key selection considerations include 3.3 V PWM logic compatibility, Tri-state PWM support, 20 ns max. propagation delay, thermal shutdown flag behavior at 160 °C, and compliance with Intel DrMOS 4.0 specification.
Technical Context
The SIC780ACD-T1-GE3 integrates high- and low-side TrenchFET Gen III MOSFETs with an on-die gate driver supporting 3.3 V logic, adaptive shoot-through protection, and bootstrap Schottky diode - enabling operation up to 1 MHz switching frequency while maintaining <20 ns PWM propagation delay and 1 V adaptive dead-time threshold detection.
Its dual-ground architecture separates PGND (high-current return) from CGND (control reference), with internal 20.2 kΩ GH–PHASE discharge resistor and VCIN/VDRV supply separation via external resistor for noise isolation - all housed in a thermally enhanced PowerPAK MLP6x6-40L package with 2.5 °C/W junction-to-case thermal resistance.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Continuous Current | >50 A per phase - supports multi-phase CPU/GPU voltage regulator designs without external current sharing circuitry |
| Peak Efficiency | 93 % at VIN = 12 V, VOUT = 1.2 V - reduces thermal load and improves POL module power density |
| PWM Logic Level | 3.3 V compatible (Vth_r = 2.4 V typ., Vth_f = 0.9 V typ.) - interfaces directly with modern VR controllers without level-shifting |
| Max. Switching Frequency | 1 MHz - enables compact filter design with sub-μH inductors and low-ESR ceramic output capacitors |
| Thermal Warning Threshold | 160 °C set / 135 °C clear (25 °C hysteresis) - provides early overtemperature alert for system-level thermal management |
| Propagation Delay | <20 ns (Tri-state to GH/GL) - preserves tight timing margins in high-frequency, multi-phase interleaved control |
| UVLO Threshold | 3.7 V (rising), 3.2 V (falling) - ensures robust startup and graceful shutdown under brownout conditions |
Pinout & Package
Package: PowerPAK® MLP66-40L (6 mm × 6 mm, 40-terminal, exposed thermal pad P3/VSWH).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (SMOD#) | Diode emulation mode enable | Active-low input that disables low-side FET to reduce light-load switching losses; internal pull-up to VCIN |
| 2 (VCIN) | Control logic supply | Bias rail for driver IC logic; UVLO protected (3.7 V turn-on); 100–300 μA quiescent current |
| 3 (VDRV) | Gate driver supply | Separate 4.5–5.5 V rail for high-current gate drive; decoupled from VCIN to suppress noise coupling |
| 4 (BOOT) | High-side bootstrap node | Connects to external capacitor and PHASE pin; integrated Schottky diode eliminates external diode |
| 5, 37, P1 (CGND) | Analog ground reference | Low-noise reference for driver logic; must be externally tied to PGND with minimal inductance (<0.5 V transient delta) |
| 6 (GH) | High-side gate drive output | Drives HS MOSFET gate; includes internal 20.2 kΩ discharge path to PHASE when VCIN = 0 |
| 7 (PHASE) | Switch node return | Internally connected to VSWH; dedicated return for BOOT capacitor; not for power routing |
| 8–14, P2 (VIN) | High-side drain input | Connects to 4.5–18 V intermediate bus; multiple pins reduce IR drop and thermal resistance |
| 15, 29–35, P3 (VSWH) | Phase node output | Main PWM output node; exposed thermal pad (P3) provides 2.5 °C/W junction-to-case path |
| 16–28 (PGND) | Power ground return | High-current return for both MOSFETs; requires low-inductance PCB copper pour tied to CGND |
| 36 (GL) | Low-side gate drive output | Drives LS MOSFET gate; disabled during SMOD# active or DSBL# asserted |
| 38 (THDN) | Thermal shutdown flag | Open-drain output pulled to VCIN via ≤20 kΩ; asserts at 160 °C, clears at 135 °C |
| 39 (DSBL#) | Global disable | Active-low shutdown; internal pull-down ensures safe default state if left floating |
| 40 (PWM) | 3.3 V logic input | Accepts Tri-state (H/L/Z) or two-state PWM; hysteresis prevents false triggering during transitions |
Key Features
| Feature | Design Value |
|---|---|
| Integrated TrenchFET Gen III MOSFETs | Optimized for 12 V input stage with reduced RDS(on) and Qg, enabling >50 A continuous current without external heatsink |
| Adaptive Dead-Time Control (AST) | Monitors GH/GL gate voltages in real time and enforces ≥1 V off-threshold before turn-on, eliminating shoot-through across load/temperature |
| Tri-State PWM Compatibility | Supports controller high-impedance shutdown mode with 150 ns hold-off timer to prevent inductor ringing and negative VOUT swing |
| Diode Emulation Mode (SMOD) | Disables GL during light load to eliminate reverse conduction loss in synchronous rectification, improving efficiency below 5 A |
| Intel DrMOS 4.0 Compliance | Fully meets specification for timing, logic thresholds, thermal flag behavior, and functional safety requirements for server/desktop CPU VR applications |
Applications
| Server CPU Voltage Regulation | GPU Power Delivery |
|---|---|
Use Scenario: Multi-phase buck converter supplying core voltage to high-performance Xeon or EPYC processors under dynamic 50–300 A load transients. IC Role / Device Role / Timing Role: Per-phase DrMOS power stage executing high-frequency (up to 1 MHz), tightly synchronized PWM switching with adaptive dead-time to maintain regulation during rapid dI/dt events. Use Value: 93 % peak efficiency and 2.5 °C/W thermal resistance enable dense, air-cooled VRM layouts without compromising transient response or thermal margin. | Use Scenario: Discrete-phase power delivery to NVIDIA A100 or AMD MI300 GPU cores requiring fast load-step response and precise voltage accuracy. IC Role / Device Role / Timing Role: Integrated gate driver + MOSFET pair providing sub-20 ns propagation delay and Tri-state PWM support for seamless phase shedding during idle states. Use Value: SMOD logic reduces light-load power loss by disabling low-side FET, extending battery life in mobile workstations and lowering fan noise in datacenter accelerators. |
| Memory Subsystem POL | AI Accelerator DC/DC Module |
Use Scenario: Point-of-load regulation for DDR5 memory modules operating at 1.1 V with strict ripple and transient requirements. IC Role / Device Role / Timing Role: High-density DrMOS stage delivering stable 50 A per phase with minimal layout area, leveraging MLP6x6-40L's thermal pad for direct PCB heat spreading. Use Value: 3.3 V PWM interface eliminates level shifters, reducing BOM count and signal integrity risk in space-constrained DIMM PCBs. | Use Scenario: Compact, high-efficiency DC/DC module powering ASIC-based AI inference engines with burst-mode workloads. IC Role / Device Role / Timing Role: DrMOS building block in modular VRM design, using THDN flag for predictive thermal throttling and DSBL# for coordinated phase disable across multi-rail systems. Use Value: Compliant with Intel DrMOS 4.0 ensures interoperability with industry-standard PMBus-enabled controllers and telemetry firmware stacks. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar DrMOS power stage applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SiC780CD-T1-GE3 | 5 V PWM logic thresholds (Vth_r = 3.7 V), no 3.3 V compatibility; identical package, pinout, and thermal specs | Requires 5 V VR controller interface; unsuitable for 3.3 V logic systems without level translation | Select only when legacy 5 V PWM controllers are used; otherwise SIC780ACD-T1-GE3 avoids external level-shifting components |
| IR35201MTRPBF | Standalone DrMOS controller (no integrated MOSFETs); requires external high/low-side FETs and discrete bootstrap circuit | Greater design flexibility but larger footprint, higher component count, and increased layout complexity | Choose for custom FET selection or ultra-high-efficiency tuning; SIC780ACD-T1-GE3 offers faster time-to-market with validated performance |
Compared with SiC780CD-T1-GE3, SIC780ACD-T1-GE3 enables direct interfacing with 3.3 V VR controllers without level shifters, while versus IR35201MTRPBF it delivers lower system-level BOM cost and smaller PCB area by integrating MOSFETs, gate driver, and bootstrap diode in one MLP6x6-40L package.
Availability
SIC780ACD-T1-GE3 is available at Aetrix Electronics and suitable for server CPU voltage regulation, GPU power delivery, and memory subsystem POL applications requiring stable component supply, long-term lifecycle support, and traceable sourcing for industrial and datacenter deployments.
Supply support for SIC780ACD-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors and power ICs, specializing in high-efficiency, high-reliability power management solutions for computing, industrial, and automotive markets.
The SiC780 family is part of Vishay's DrMOS product line, engineered specifically for high-current, high-frequency synchronous buck conversion in next-generation CPU, GPU, and AI accelerator voltage regulator modules compliant with Intel DrMOS 4.0.
FAQ
What is the PWM logic voltage compatibility of the SIC780ACD-T1-GE3?
The SIC780ACD-T1-GE3 is specifically designed for 3.3 V logic systems, with PWM rising threshold of 2.4 V (typical) and falling threshold of 0.9 V (typical). This allows direct connection to modern VR controllers without level-shifting circuitry. The SIC780ACD-T1-GE3 differs from the 5 V-compatible SiC780CD-T1-GE3, making correct logic-level matching essential for reliable operation.
How does the SMOD# pin improve light-load efficiency in the SIC780ACD-T1-GE3?
When SMOD# is driven low, the SIC780ACD-T1-GE3 disables the low-side MOSFET (GL), converting the synchronous buck into a non-synchronous configuration. This eliminates reverse conduction losses during discontinuous conduction mode (DCM), significantly improving efficiency below ~5 A output current. The SIC780ACD-T1-GE3 implements this function with internal logic that ensures clean turn-off without shoot-through.
What thermal protection features does the SIC780ACD-T1-GE3 provide?
The SIC780ACD-T1-GE3 includes an open-drain THDN pin that asserts at 160 °C junction temperature and clears at 135 °C, providing 25 °C hysteresis. It does not autonomously shut down - instead, it signals external thermal management circuitry. The SIC780ACD-T1-GE3 also features a low 2.5 °C/W junction-to-case thermal resistance via its exposed P3 (VSWH) thermal pad, enabling efficient PCB-based heat dissipation.
Is the SIC780ACD-T1-GE3 pin-compatible with other DrMOS devices?
The SIC780ACD-T1-GE3 uses the standard PowerPAK MLP66-40L package and shares identical pinout with SiC780CD-T1-GE3, including VIN, VSWH, PGND, and PWM assignments. However, it is not pin-compatible with non-Vishay DrMOS devices such as IR35201MTRPBF, which is a controller-only IC requiring external FETs and different pin functions. Always verify logic thresholds and timing before substitution.
What is the maximum recommended switching frequency for the SIC780ACD-T1-GE3?
The SIC780ACD-T1-GE3 supports operation up to 1 MHz, as confirmed by its electrical specifications and typical application waveforms. At this frequency, the SIC780ACD-T1-GE3 maintains <20 ns propagation delay and stable adaptive dead-time control. Performance above 1 MHz is not characterized and may degrade efficiency or cause timing violations due to gate drive limitations.
SIC780ACD-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- PowerPAK® MLP66-40
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Output Configuration:
- Half Bridge
- Applications:
- Synchronous Buck Converters
- Interface:
- PWM
- Load Type:
- Inductive
- Technology:
- DrMOS
- Rds On (Typ):
- -
- Current - Output / Channel:
- 50A
- Current - Peak Output:
- -
- Voltage - Supply:
- 4.5V ~ 5.5V
- Voltage - Load:
- 4.5V ~ 18V
- Operating Temperature:
- -40°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Features:
- Bootstrap Circuit, Diode Emulation, Status Flag
- Fault Protection:
- Over Temperature, Shoot-Through, UVLO
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® MLP66-40
SIC780ACD-T1-GE3 FAQ
1.How can I place an order for SIC780ACD-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIC780ACD-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIC780ACD-T1-GE3 reliable?
The price and inventory of SIC780ACD-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIC780ACD-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SIC780ACD-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIC780ACD-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIC780ACD-T1-GE3?
SIC780ACD-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIC780ACD-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIC780ACD-T1-GE3?
For technical support, including SIC780ACD-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIC780ACD-T1-GE3 requirements.
6.How does Aetrix verify that SIC780ACD-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SIC780ACD-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIC780ACD-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SIC780ACD-T1-GE3?
All SIC780ACD-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIC780ACD-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIC780ACD-T1-GE3 part is unused and in its original packaging.
Return procedure for SIC780ACD-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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