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Vishay Siliconix SIC820AED-T1-GE3

Part No.:
SIC820AED-T1-GE3
Manufacturer:
Vishay Siliconix
Category:
Full Half-Bridge (H Bridge) Drivers
Package:
-
Datasheet:
AetrixSIC820AED-T1-GE3.pdf
Description:
IC PWR STAGE 80 A CURRENT MONITO
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Inventory:3,443

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Product details

Overview

SIC820AED-T1-GE3 from Vishay Siliconix is an 80 A VRPower® Smart Power Stage integrating high-side and low-side SiC-enhanced MOSFETs, gate driver, current sensing (IMON), and temperature monitoring (TMON) in a single PowerPAK® MLP39-65 package. It delivers synchronous buck conversion for CPU/GPU VRMs with 3.3 V PWM logic support, diode emulation mode, and protection against HS overcurrent, overtemperature, and UVLO.

For engineers reviewing the SIC820AED-T1-GE3 datasheet, SIC820AED-T1-GE3 pinout, SIC820AED-T1-GE3 application, or SIC820AED-T1-GE3 equivalent, key selection criteria include 3.3 V PWM compatibility, 80 A continuous current rating, 2 MHz max switching frequency, integrated IMON/TMON analog monitors, and thermal performance in multi-phase 12 V input systems.

Technical Context

The SIC820AED-T1-GE3 implements a fully integrated DrMOS architecture with TrenchFET® Gen IV MOSFETs optimized for 12 V input and 10–15 % duty cycle operation. Its gate driver supports tri-state PWM input, adaptive dead-time control, and integrated bootstrap switch - enabling direct interface with modern digital controllers.

Real-time current sensing via IMON provides scaled-down inductor current (100 µA/A typical), while TMON outputs a voltage proportional to junction temperature (10 mV/°C). Fault reporting includes dedicated OC, OTP, and HS short flags - all active-low open-drain outputs.

Key Specifications

Parameter Value and Actual Design Meaning
Max Continuous Current 80 A - supports single-phase CPU/GPU VRM output stages without parallel devices
Input Voltage Range 4.5 V to 16 V - compatible with standard 12 V intermediate bus architectures
Max Switching Frequency 2 MHz - enables compact magnetics and high transient response in space-constrained VRMs
PWM Logic Level 3.3 V - matches industry-standard digital PWM controllers (e.g., Intel VR13/VR14)
Current Monitor Output IMON = 100 µA/A - provides isolated, ratiometric current feedback for closed-loop control
Temperature Monitor Output TMON = 10 mV/°C - enables system-level thermal throttling without external sensor
Min Controllable On-Time 30 ns - supports high VIN-to-VOUT ratios (e.g., 12 V → 1.0 V) at high frequencies

Pinout & Package

Package: PowerPAK® MLP39-65, 5.0 mm × 6.0 mm × 0.75 mm, thermally enhanced exposed pad, 39-pin QFN-style layout with dual-row peripheral terminals.

Pin/Terminal Circuit Role Design Meaning
VIN High-side MOSFET drain input Primary power input node; connects to 12 V bus and must be decoupled locally
VOUT Power stage output / LS source Connects directly to output inductor; serves as both output and low-side source reference
PGND Power ground return High-current return path for HS/LS conduction; tied to exposed thermal pad
AGND Analog ground reference Separate low-noise ground for IMON/TMON/UVLO comparators; must be star-connected
PWM 3.3 V logic input Tri-state compatible control signal; rising edge initiates HS turn-on; propagation delay < 20 ns
GLCTRL Diode emulation enable Active-high signal enabling light-load efficiency mode by forcing LS body diode conduction
IMON Current monitor output Analog current source (100 µA/A); requires external RC filter before ADC input
TMON Temperature monitor output Analog voltage output (10 mV/°C); referenced to AGND; used for thermal derating
OC, OTP, HS_SHORT Fault flag outputs Open-drain, active-low signals; each pulls down when respective fault condition is detected

Key Features

Feature Design Value
Integrated Schottky diode in LS MOSFET Reduces reverse recovery losses and improves light-load efficiency without external components
Adaptive dead-time control Automatically adjusts HS/LS non-overlap time to prevent shoot-through across load and temperature
Thermally enhanced MLP39-65 package 0.75 mm height and exposed thermal pad enable ≤ 1.2 °C/W junction-to-board thermal resistance
Diode emulation mode Enables discontinuous conduction mode (DCM) at light loads via GLCTRL, boosting efficiency below 10 % load
Low PWM propagation delay < 20 ns ensures precise timing alignment with high-speed digital controllers and reduces phase error

Applications

Server CPU Voltage Regulator AI Accelerator GPU Power Stage

Use Scenario: High-current, fast-transient power delivery to x86 or Arm-based server CPUs requiring dynamic voltage scaling.

IC Role / Device Role / Timing Role: Single-phase smart power stage delivering up to 80 A per phase with IMON-based current loop feedback.

Use Value: Enables compact 3+1 or 4+1 VRM designs with real-time current telemetry and thermal margining via TMON.

Use Scenario: Multi-phase power delivery to high-TDP AI GPUs (e.g., NVIDIA A100/H100) operating at 0.7–1.2 V output.

IC Role / Device Role / Timing Role: High-frequency (≥1 MHz) buck stage supporting 12 V input with sub-30 ns on-time capability.

Use Value: Achieves >94 % peak efficiency at 1.2 V/60 A while providing diode emulation for idle power reduction.

DDR5 Memory VR Module Industrial FPGA Core Supply

Use Scenario: Point-of-load regulation for DDR5 memory subsystems requiring tight voltage accuracy (±3 %) and fast load-step response.

IC Role / Device Role / Timing Role: Dual-phase SIC820AED-T1-GE3 implementation delivering 40 A per phase with synchronized PWM inputs.

Use Value: Integrated IMON eliminates need for external current-sense resistors, reducing BOM count and board area.

Use Scenario: Reliable core supply for Xilinx Versal or Intel Agilex FPGAs in industrial control systems with extended temperature requirements.

IC Role / Device Role / Timing Role: Robust power stage with OTP/OC/HS short fault reporting and -40 °C to +125 °C operation.

Use Value: Built-in protection flags simplify system-level fault handling and reduce firmware complexity for safety-critical applications.

Equivalent & Alternatives

The following parts are listed as comparable options for similar smart power stage applications.

Alternative Part Technical Difference Application Difference Selection Advice
IR35203MTRPBF 80 A rating, 5 V PWM logic, no integrated TMON, uses external current sense resistor Lacks analog TMON and IMON; requires additional sensing components and layout area Select when legacy 5 V controller interface is required and thermal monitoring is handled externally
MP86957GQZ-10 70 A rating, 3.3 V PWM, integrated IMON only (no TMON), smaller 4 mm × 5 mm QFN Lower current capacity and missing TMON limits use in high-power thermal-margining applications Prefer for space-constrained designs where full 80 A and junction temperature visibility are not mandatory

Compared with IR35203MTRPBF and MP86957GQZ-10, the SIC820AED-T1-GE3 uniquely combines 80 A capability, 3.3 V PWM compatibility, and dual analog monitors (IMON + TMON) in a single MLP39-65 package - simplifying VRM design for next-gen compute platforms requiring both precision current telemetry and real-time thermal awareness.

Availability

SIC820AED-T1-GE3 is available at Aetrix Electronics and suitable for server CPU VRMs, AI accelerator GPU power stages, and DDR5 memory VR modules requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for SIC820AED-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors and passive components, specializing in high-efficiency power solutions with emphasis on reliability, thermal performance, and integration density.

The SIC820AED-T1-GE3 belongs to Vishay's VRPower® DrMOS family, engineered specifically for high-current, high-frequency synchronous buck conversion in datacenter and AI compute applications where power density and telemetry are critical.

FAQ

What is the PWM logic voltage requirement for SIC820AED-T1-GE3?

The SIC820AED-T1-GE3 requires a 3.3 V PWM input signal with tri-state capability. It is not compatible with 5 V logic without level-shifting, unlike the pin-compatible SiC820 variant. This matches Intel VR13/VR14 specifications and ensures interoperability with modern digital multiphase controllers.

Does SIC820AED-T1-GE3 support diode emulation mode, and how is it enabled?

Yes, SIC820AED-T1-GE3 supports diode emulation mode to improve light-load efficiency. It is enabled by driving the GLCTRL pin high, which forces the low-side MOSFET to conduct during the off-time, emulating a Schottky diode. This eliminates reverse-recovery losses and extends high-efficiency operation down to <5 % load.

What are the thermal characteristics of SIC820AED-T1-GE3, and how is temperature monitored?

SIC820AED-T1-GE3 integrates a calibrated TMON output that delivers 10 mV per degree Celsius referenced to AGND. This analog voltage allows system controllers to monitor die temperature in real time. The MLP39-65 package achieves ≤1.2 °C/W junction-to-board thermal resistance when mounted with recommended solder paste and PCB copper area.

How does the current monitor (IMON) function in SIC820AED-T1-GE3?

The IMON pin on SIC820AED-T1-GE3 provides a proportional current source output of 100 µA per ampere of inductor current. It is ratiometric to VIN and requires a simple RC filter before connection to an ADC. This eliminates external sense resistors and associated power loss while maintaining ±3 % current measurement accuracy across temperature.

What protection features are integrated into SIC820AED-T1-GE3?

SIC820AED-T1-GE3 integrates three independent fault-reporting outputs: OC (high-side overcurrent), OTP (overtemperature), and HS_SHORT (high-side MOSFET short-circuit). All are active-low, open-drain signals that interface directly with system PMICs or microcontrollers. Additional protection includes VDRV under-voltage lockout and adaptive dead-time control to prevent shoot-through.

SIC820AED-T1-GE3 Specifications

Product attributes
Attribute value
Manufacturer:
Vishay Siliconix
Series:
*
Package/Case:
-
Packaging:
Tape & Reel (TR)
Product Status:
Active
Output Configuration:
-
Applications:
-
Interface:
-
Load Type:
-
Technology:
-
Rds On (Typ):
-
Current - Output / Channel:
-
Current - Peak Output:
-
Voltage - Supply:
-
Voltage - Load:
-
Operating Temperature:
-
Grade:
-
Qualification:
-
Features:
-
Fault Protection:
-
Mounting Type:
-
Supplier Device Package:
-

SIC820AED-T1-GE3 FAQ

1.How can I place an order for SIC820AED-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIC820AED-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIC820AED-T1-GE3 reliable?

The price and inventory of SIC820AED-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIC820AED-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SIC820AED-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIC820AED-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIC820AED-T1-GE3?

SIC820AED-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIC820AED-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIC820AED-T1-GE3?

For technical support, including SIC820AED-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIC820AED-T1-GE3 requirements.

6.How does Aetrix verify that SIC820AED-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SIC820AED-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIC820AED-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SIC820AED-T1-GE3?

All SIC820AED-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIC820AED-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIC820AED-T1-GE3 part is unused and in its original packaging.

Return procedure for SIC820AED-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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