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Vishay Siliconix SIC820ED-T1-GE3
- Part No.:
- SIC820ED-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- Full Half-Bridge (H Bridge) Drivers
- Package:
- 39-PowerVFQFN
- Datasheet:
-
SIC820ED-T1-GE3.pdf
- Description:
- IC POWER STAGE 80A 5X6 MLP
- Quantity:
- Payment:
- Shipping:
Inventory:2,990
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Product details
Overview
SIC820ED-T1-GE3 from Vishay Siliconix is an 80 A VRPower® smart power stage integrating high-side and low-side SiC-enhanced MOSFETs, gate driver, current sensing (IMON), and temperature monitoring (TMON) in a single PowerPAK® MLP39-65 package. It delivers up to 80 A continuous output at ≤2 MHz switching frequency with 3.3 V/5 V tri-state PWM logic compatibility and diode emulation mode for high efficiency across full load range - deployed in multi-phase CPU/GPU VRDs.
For engineers reviewing the SIC820ED-T1-GE3 datasheet, SIC820ED-T1-GE3 pinout, SIC820ED-T1-GE3 application, or SIC820ED-T1-GE3 equivalent, key selection criteria include its 4.5–16 V input range, integrated thermal/current monitoring, adaptive dead-time control, <20 ns PWM propagation delay, and support for 30 ns minimum controllable on-time in high-density synchronous buck converters.
Technical Context
The SIC820ED-T1-GE3 implements a fully integrated DrMOS architecture with TrenchFET® Gen IV MOSFETs optimized for 12 V input and 10–15 % duty-cycle operation. Its gate driver integrates bootstrap switching, adaptive dead-time control, and tri-state PWM interface supporting both 3.3 V and 5 V logic levels.
Real-time monitoring includes scaled current sense output (IMON) proportional to inductor current and analog temperature monitor (TMON) for junction temperature tracking. Protection features include HS FET overcurrent flag, overtemperature alert, and VDRV under-voltage lockout - all enabling robust closed-loop regulation in high-performance VRMs.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Max Continuous Current | 80 A - supports single-phase CPU/GPU VRD designs delivering >80 A per phase without parallel staging |
| Input Voltage Range | 4.5 V to 16 V - compatible with standard 12 V intermediate bus and wide-input industrial DC/DC systems |
| Switching Frequency | Up to 2 MHz - enables compact magnetics and high transient response in space-constrained VR modules |
| PWM Logic Level | 3.3 V / 5 V tri-state - interoperable with modern digital PWM controllers including Intel VR13/VR14 and AMD SVI2/SVI3 |
| Min Controllable On-Time | 30 ns - supports ultra-low duty cycle operation required for sub-1 V core supplies (e.g., 1.2 V @ 600 kHz = 10 %) |
| PWM Propagation Delay | < 20 ns - minimizes timing skew between controller and power stage for precise phase alignment in multi-phase systems |
| Thermal Monitoring | Analog TMON output - provides linear voltage proportional to die temperature for real-time thermal throttling without external sensor |
Pinout & Package
Package: PowerPAK® MLP39-65, 5.0 mm × 6.0 mm × 0.75 mm thermally enhanced QFN with exposed thermal pad and 39-pin layout.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| VIN | High-side MOSFET drain input | Primary power input node; connects to 4.5–16 V bus and must be decoupled near package |
| VOUT | Power stage output / LS source | Connects directly to output inductor; serves as both output node and low-side MOSFET source reference |
| PGND | Power ground return | Low-inductance return path for high-current switching loops; tied to thermal pad and system PGND plane |
| AGND | Analog ground reference | Separate ground for IMON/TMON analog outputs and internal bias circuitry; must be routed separately from PGND |
| IMON | Current monitor output | Analog voltage proportional to inductor current (typically 1 mV/A); used for current-mode control or telemetry |
| TMON | Temperature monitor output | Analog voltage linearly tracking junction temperature (≈10 mV/°C); enables dynamic thermal management |
| GLCTRL | Diode emulation enable | Active-high signal enabling light-load diode emulation mode via LS FET body diode conduction control |
| PWM | PWM input (tri-state compatible) | Accepts 3.3 V or 5 V logic; internal level-shifting ensures reliable drive regardless of controller I/O voltage |
| EN | Enable input | Hardware enable/disable control; internally pulled up - open or high = enabled, low = shutdown |
Key Features
| Feature | Design Value |
|---|---|
| Integrated Schottky diode in LS MOSFET | Reduces reverse recovery losses and improves light-load efficiency without external components |
| Adaptive dead-time control | Automatically adjusts HS/LS non-overlap time based on MOSFET characteristics and temperature, preventing shoot-through |
| Real-time IMON current sensing | Provides accurate, low-latency current feedback for fast transient response and per-phase current balancing |
| On-die thermal monitor (TMON) | Enables predictive thermal throttling and eliminates need for discrete thermal sensors in VRM PCB layout |
| HS overcurrent and short-circuit detection | Flags fault conditions within nanoseconds, allowing host controller to initiate safe shutdown before damage occurs |
Applications
| Server CPU VRM | GPU Power Delivery |
|---|---|
Use Scenario: High-current, multi-phase voltage regulator for x86 server CPUs requiring dynamic load steps up to 300 A/μs. IC Role / Device Role / Timing Role: Smart power stage providing synchronized switching, current sensing, and thermal feedback to digital PWM controller. Use Value: Enables 80 A per phase capability with <20 ns propagation delay and 30 ns min on-time - critical for maintaining regulation during rapid DVFS transitions. | Use Scenario: Compact, high-efficiency power stage in AI accelerator cards where board space and thermal density are constrained. IC Role / Device Role / Timing Role: Integrated DrMOS delivering regulated core voltage (0.7–1.2 V) with real-time IMON/TMON telemetry to GPU host controller. Use Value: Eliminates discrete current/temperature sensing components while supporting 2 MHz operation for smaller inductors and faster transient response. |
| Network Switch ASIC Supply | Industrial FPGA Core Rail |
Use Scenario: Multi-rail power system for high-port-density Ethernet switches with strict efficiency and thermal requirements at 12 V input. IC Role / Device Role / Timing Role: Primary buck stage converting 12 V to 0.85 V for switch fabric ASICs, with diode emulation enabled at idle. Use Value: Achieves >94 % efficiency at 10 A and >90 % at 50 A (1.2 V @ 800 kHz) due to TrenchFET Gen IV + integrated Schottky optimization. | Use Scenario: Reliable, long-lifecycle core supply for Xilinx/Kintex Ultrascale+ FPGAs in factory automation controllers. IC Role / Device Role / Timing Role: Single-phase VRPower stage with OTP/OC fault reporting and traceable Vishay manufacturing for industrial BOM stability. Use Value: Built-in overtemperature and overcurrent alerts allow host firmware to log faults and initiate graceful shutdown - meeting IEC 61508 functional safety prerequisites. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar smart power stage applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SiC820AED-T1-GE3 | 3.3 V PWM logic only (vs. dual 3.3 V/5 V support in SIC820ED-T1-GE3); identical package, IMON/TMON, and protection features | Required when host controller uses exclusively 3.3 V PWM signaling; not suitable for mixed-voltage or legacy 5 V controller designs | Select SiC820AED-T1-GE3 only if system-level PWM I/O is confirmed 3.3 V-only and no future controller upgrade path requires 5 V compatibility |
| IR35201MTRPBF | Discrete DrMOS controller + external power stage; lacks integrated IMON/TMON; requires external current sense resistor and thermal sensor | Used in cost-sensitive or thermally isolated designs where analog telemetry integration is not required | Choose IR35201MTRPBF only when design flexibility outweighs integration benefits - e.g., custom MOSFET selection or separate thermal management architecture |
Compared with SiC820AED-T1-GE3, the SIC820ED-T1-GE3 offers broader controller compatibility via dual-voltage PWM support; versus IR35201MTRPBF, it reduces component count by 12+ parts and eliminates calibration of external current sense while delivering superior thermal responsiveness through on-die TMON.
Availability
SIC820ED-T1-GE3 is available at Aetrix Electronics and suitable for server CPU VRMs, AI accelerator GPU power delivery, and industrial FPGA core rails requiring stable component supply, long-term manufacturability, and Vishay's qualified global production.
Supply support for SIC820ED-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors and passive components, specializing in high-reliability power MOSFETs, diodes, and integrated power solutions for computing, industrial, and automotive markets.
The SIC820ED-T1-GE3 belongs to Vishay's VRPower® DrMOS product line, engineered specifically for high-current, high-frequency synchronous buck conversion in next-generation CPU, GPU, and ASIC power delivery systems where integration, efficiency, and telemetry are critical.
FAQ
What is the PWM logic voltage compatibility of the SIC820ED-T1-GE3?
The SIC820ED-T1-GE3 supports both 3.3 V and 5 V tri-state PWM logic inputs, enabling direct interface with Intel VR13/VR14, AMD SVI2/SVI3, and legacy digital PWM controllers. Its internal level-shifting circuitry ensures reliable gate drive regardless of controller I/O voltage, eliminating need for external level translators in mixed-voltage systems.
Does the SIC820ED-T1-GE3 include integrated current and temperature sensing?
Yes, the SIC820ED-T1-GE3 integrates real-time current monitoring (IMON) and die temperature monitoring (TMON) as analog voltage outputs. IMON provides a scalable voltage (typically 1 mV/A) proportional to inductor current, while TMON delivers ≈10 mV/°C linear output - both usable for closed-loop control or telemetry without external sensors.
What protection features are built into the SIC820ED-T1-GE3?
The SIC820ED-T1-GE3 includes HS FET overcurrent detection, overtemperature alert (OTP), VDRV under-voltage lockout (UVLO), and HS MOSFET short-circuit flag. These protections trigger fault reporting via dedicated pins or status registers, allowing host controllers to initiate safe shutdown before thermal runaway or catastrophic failure occurs.
Is the SIC820ED-T1-GE3 pin-compatible with the SiC820AED-T1-GE3?
No - although both share the same PowerPAK® MLP39-65 package and pinout, the SIC820ED-T1-GE3 supports dual 3.3 V/5 V PWM logic, whereas the SiC820AED-T1-GE3 is specified for 3.3 V PWM only. Interchangeability requires verification that the host controller's PWM output voltage matches the selected variant's specification.
What is the maximum recommended switching frequency for the SIC820ED-T1-GE3?
The SIC820ED-T1-GE3 is characterized and rated for operation up to 2 MHz. At this frequency, it maintains high efficiency (>90 % at 50 A, 1.2 V output) and stable regulation when paired with appropriate gate drive strength, PCB layout, and output filter design per Vishay's application notes AN848 and AN852.
SIC820ED-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- VRPower®
- Package/Case:
- 39-PowerVFQFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Output Configuration:
- High Side
- Applications:
- DC-DC Converters, Synchronous Buck Converter
- Interface:
- Logic, PWM
- Load Type:
- Inductive
- Technology:
- Power MOSFET
- Rds On (Typ):
- -
- Current - Output / Channel:
- 80A
- Current - Peak Output:
- -
- Voltage - Supply:
- 3.3V ~ 5V
- Voltage - Load:
- 12V
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Features:
- Bootstrap Circuit, Diode Emulation
- Fault Protection:
- Over Current, Over Temperature, UVLO
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® MLP39-65
SIC820ED-T1-GE3 FAQ
1.How can I place an order for SIC820ED-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIC820ED-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIC820ED-T1-GE3 reliable?
The price and inventory of SIC820ED-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIC820ED-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SIC820ED-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIC820ED-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIC820ED-T1-GE3?
SIC820ED-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIC820ED-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIC820ED-T1-GE3?
For technical support, including SIC820ED-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIC820ED-T1-GE3 requirements.
6.How does Aetrix verify that SIC820ED-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SIC820ED-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIC820ED-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SIC820ED-T1-GE3?
All SIC820ED-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIC820ED-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIC820ED-T1-GE3 part is unused and in its original packaging.
Return procedure for SIC820ED-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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