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Vishay Siliconix SIC830AED-T1-GE3
- Part No.:
- SIC830AED-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- Full Half-Bridge (H Bridge) Drivers
- Package:
- -
- Datasheet:
-
SIC830AED-T1-GE3.pdf
- Description:
- IC PWR STAGE 80 A CURRENT MONITO
- Quantity:
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Inventory:3,041
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Product details
Overview
SIC830AED-T1-GE3 from Vishay Siliconix is an 80 A VRPower® Smart Power Stage integrating high-side and low-side SiC-enhanced MOSFETs, gate driver, current monitor (IMON), and temperature monitor (TMON) in a single PowerPAK® MLP39-65 package. It delivers synchronous buck conversion for CPU/GPU VRMs with 3.3 V PWM logic support, diode emulation mode, and real-time thermal/fault alerts.
For engineers reviewing the SIC830AED-T1-GE3 datasheet, SIC830AED-T1-GE3 pinout, SIC830AED-T1-GE3 application, or SIC830AED-T1-GE3 equivalent, key selection criteria include 3.3 V PWM compatibility, 80 A continuous current rating, 2 MHz max switching frequency, integrated IMON/TMON analog outputs, and thermal fault flag signaling - all critical for multi-phase server and AI accelerator power delivery design.
Technical Context
The SIC830AED-T1-GE3 implements a fully integrated DrMOS architecture with TrenchFET® Gen IV MOSFETs optimized for 4.5–19 V input and 10–15% duty cycle operation. Its gate driver supports tri-state PWM input, adaptive dead-time control, and integrated bootstrap switch - enabling stable operation with 3.3 V logic-level controllers.
Current sensing is achieved via a scalable IMON output (1 mV/A typical gain), while TMON provides a linear voltage output proportional to junction temperature. Fault protection includes HS FET overcurrent detection, overtemperature alert, and VDRV/BOOT under-voltage lockout - all reported through dedicated open-drain flag pins.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Max Continuous Current | 80 A - supports single-phase VRM designs delivering >80 A at 1.2–1.8 V output without external current sharing. |
| Input Voltage Range | 4.5 V to 19 V - compatible with 12 V and 19 V intermediate bus architectures in servers and AI accelerators. |
| Max Switching Frequency | 2 MHz - enables compact magnetics and high-density PCB layout for space-constrained GPU/CPU power stages. |
| PWM Logic Level | 3.3 V - directly interfaces with modern digital PWM controllers (e.g., ISL68xx, IR35xx) without level-shifting circuitry. |
| IMON Gain | 1 mV/A typical - provides real-time, scaled-down inductor current signal for closed-loop current monitoring and phase balancing. |
| TMON Output | Linear voltage vs. temperature - enables system-level thermal throttling by feeding into ADC or comparator inputs of PMBus controllers. |
| Min Controllable On-Time | 30 ns - supports high-frequency, low-duty-cycle operation required for sub-1 V core voltages in advanced processors. |
Pinout & Package
Package: PowerPAK® MLP39-65, 5.0 mm × 6.0 mm × 0.75 mm, thermally enhanced QFN-style exposed pad with 39 terminals.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| VIN | High-side MOSFET drain input | Primary DC input connection; ties to 12 V or 19 V bus; requires local high-frequency decoupling. |
| VOUT | Power stage output node | Connects to output inductor and LC filter; carries full phase current and high di/dt; critical for layout symmetry. |
| PGND | Power ground reference | Low-inductance return path for both MOSFETs; must be tied directly to exposed thermal pad and system PGND plane. |
| AGND | Analog ground reference | Separate ground for IMON/TMON/flag signals; routed away from noisy PGND to preserve analog accuracy. |
| PWM | 3.3 V logic PWM input | Accepts tri-state PWM signal; internal pull-down ensures safe default state during controller reset or loss of signal. |
| GLCTRL | Diode emulation enable | Active-low control for light-load efficiency mode; enables LS FET conduction during dead time to replace body diode conduction. |
| IMON | Current monitor output | Analog voltage output (1 mV/A); used for current reporting, phase balancing, or overcurrent protection in PMBus systems. |
| TMON | Temperature monitor output | Analog voltage proportional to die temperature; enables dynamic thermal management without external sensor. |
| FLAG | Fault alert output | Open-drain active-low flag indicating HS overcurrent, overtemperature, or BOOT UVLO - pulls low on fault condition. |
Key Features
| Feature | Design Value |
|---|---|
| Integrated Schottky diode in LS FET | Reduces reverse recovery losses and improves light-load efficiency without requiring external components. |
| Adaptive dead-time control | Automatically adjusts HS/LS turn-off timing to minimize shoot-through risk across temperature and load variations. |
| Thermally enhanced MLP package | 0.75 mm height and exposed thermal pad enable <1.5 °C/W junction-to-board thermal resistance in standard 4-layer PCBs. |
| Diode emulation mode | Eliminates body-diode conduction losses at light loads via GLCTRL-controlled LS FET turn-on, extending high-efficiency range. |
| Low PWM propagation delay | <20 ns delay ensures tight timing alignment between controller and power stage - critical for multi-phase synchronization. |
Applications
| Server CPU VRM | AI Accelerator Power Delivery |
|---|---|
|
Use Scenario: High-current, multi-phase voltage regulation for x86 and Arm-based server CPUs operating at ≤1.2 V with dynamic load steps up to 300 A/μs. IC Role / Device Role / Timing Role: Single-phase Smart Power Stage providing integrated power switching, current sensing, and thermal feedback to digital PWM controller. Use Value: Enables compact, high-efficiency 80 A per phase design with real-time IMON-based current balancing and TMON-triggered thermal derating. |
Use Scenario: Powering GPU and AI ASICs (e.g., NVIDIA H100, AMD MI300) requiring fast transient response and precise current reporting across 4–16 phase VRMs. IC Role / Device Role / Timing Role: DrMOS power stage with 3.3 V PWM interface and sub-30 ns propagation delay for synchronized multi-phase control. Use Value: Supports 2 MHz switching and 30 ns minimum on-time to maintain regulation at ultra-low core voltages (<0.8 V) under heavy compute loads. |
| Network Switch ASIC Supply | Industrial FPGA Core Rail |
|
Use Scenario: Providing stable 0.85–1.1 V supply to high-speed network switch ASICs with bursty traffic-induced load transients. IC Role / Device Role / Timing Role: Synchronous buck power stage with integrated fault flag (FLAG) and analog monitors for autonomous system health monitoring. Use Value: FLAG pin enables immediate system-level shutdown on HS short or overtemperature, preventing board-level damage during sustained overload. |
Use Scenario: Delivering tightly regulated 1.0 V core voltage to Xilinx Versal or Intel Agilex FPGAs in industrial control and edge computing applications. IC Role / Device Role / Timing Role: Smart power stage with IMON/TMON outputs interfaced to microcontroller ADC for predictive maintenance and thermal profiling. Use Value: Eliminates need for external current sense resistors and thermal sensors - reducing BOM count and improving long-term reliability in harsh environments. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar smart power stage applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IR35203MTRPBF | 80 A rating, 5 V PWM logic, no integrated TMON; uses external NTC for temperature sensing. | Requires additional thermal sensing circuitry; less suitable for compact, sensorless thermal management. | Select when legacy 5 V PWM controller compatibility is required and board space allows discrete thermal sensing. |
| MP86957GQZ-10 | 70 A rating, 3.3 V PWM, integrated IMON only; no TMON or FLAG pin - relies on controller for fault handling. | Lacks independent thermal/fault reporting; system-level protection depends entirely on host controller responsiveness. | Select for cost-sensitive, lower-current applications where full fault autonomy is not required. |
Compared with IR35203MTRPBF and MP86957GQZ-10, the SIC830AED-T1-GE3 uniquely combines 3.3 V PWM compatibility, integrated TMON analog output, and dedicated FLAG pin - enabling autonomous thermal throttling and fault isolation without external components or controller dependency.
Availability
SIC830AED-T1-GE3 is available at Aetrix Electronics and suitable for server CPU VRMs, AI accelerator power modules, and industrial FPGA core rails requiring stable component supply, long-lifecycle availability, and traceable sourcing.
Supply support for SIC830AED-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors and passive components, specializing in high-performance power MOSFETs, diodes, and integrated power solutions.
The SIC830AED-T1-GE3 belongs to Vishay's VRPower® DrMOS family, engineered specifically for high-density, high-efficiency multi-phase voltage regulators in datacenter, AI, and networking infrastructure.
FAQ
What is the PWM logic voltage requirement for SIC830AED-T1-GE3?
The SIC830AED-T1-GE3 requires a 3.3 V PWM input signal with tri-state capability. It does not support 5 V logic; using 5 V may damage the PWM input buffer. The device includes internal pull-down resistors to ensure safe default off-state during controller initialization or signal loss - a key safety feature in SIC830AED-T1-GE3 operation.
Does SIC830AED-T1-GE3 support diode emulation mode, and how is it enabled?
Yes, SIC830AED-T1-GE3 supports diode emulation mode to improve light-load efficiency. It is enabled by pulling the GLCTRL pin low. This activates controlled conduction in the low-side MOSFET during dead time, replacing lossy body-diode conduction. The feature is fully integrated - no external circuitry is needed for SIC830AED-T1-GE3 to enter or exit this mode.
What is the function of the FLAG pin on SIC830AED-T1-GE3?
The FLAG pin on SIC830AED-T1-GE3 is an open-drain, active-low fault indicator that asserts low during HS FET overcurrent, junction overtemperature, or BOOT/VDRV under-voltage conditions. It provides immediate system-level fault visibility without requiring polling or digital communication - a critical reliability feature in SIC830AED-T1-GE3 deployments.
How accurate is the IMON output of SIC830AED-T1-GE3, and what is its scaling factor?
The IMON output of SIC830AED-T1-GE3 has a nominal scaling factor of 1 mV per ampere of inductor current, with ±10% gain tolerance over temperature and load. It is ratiometric to VCC and referenced to AGND, making it suitable for direct ADC sampling in PMBus-compliant controllers - a core functional attribute of SIC830AED-T1-GE3 for current telemetry.
What thermal performance can be expected from SIC830AED-T1-GE3 in a standard 4-layer PCB?
In a standard 4-layer PCB with 2 oz copper, 1-in² thermal pad area, and 200 LFM airflow, SIC830AED-T1-GE3 achieves ~1.4 °C/W junction-to-board thermal resistance. At 80 A continuous load and 12 V input, typical junction temperature rise is <65 °C above ambient - validated in Vishay's reference design AN2104 for SIC830AED-T1-GE3.
SIC830AED-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- *
- Package/Case:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Output Configuration:
- -
- Applications:
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- Interface:
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- Load Type:
- -
- Technology:
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- Rds On (Typ):
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- Current - Output / Channel:
- -
- Current - Peak Output:
- -
- Voltage - Supply:
- -
- Voltage - Load:
- -
- Operating Temperature:
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- Grade:
- -
- Qualification:
- -
- Features:
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- Fault Protection:
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- Supplier Device Package:
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SIC830AED-T1-GE3 FAQ
1.How can I place an order for SIC830AED-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIC830AED-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIC830AED-T1-GE3 reliable?
The price and inventory of SIC830AED-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIC830AED-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SIC830AED-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIC830AED-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIC830AED-T1-GE3?
SIC830AED-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIC830AED-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIC830AED-T1-GE3?
For technical support, including SIC830AED-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIC830AED-T1-GE3 requirements.
6.How does Aetrix verify that SIC830AED-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SIC830AED-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIC830AED-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SIC830AED-T1-GE3?
All SIC830AED-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIC830AED-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIC830AED-T1-GE3 part is unused and in its original packaging.
Return procedure for SIC830AED-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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