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Vishay Siliconix SIC830ED-T1-GE3
- Part No.:
- SIC830ED-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- Full Half-Bridge (H Bridge) Drivers
- Package:
- 39-PowerVFQFN
- Datasheet:
-
SIC830ED-T1-GE3.pdf
- Description:
- IC POWER STAGE 80A 5X6 MLP
- Quantity:
- Payment:
- Shipping:
Inventory:3,013
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Product details
Overview
SIC830ED-T1-GE3 from Vishay Siliconix is an 80 A VRPower® Smart Power Stage integrating high-side and low-side SiC-enhanced MOSFETs, gate driver, current monitor (IMON), and temperature monitor (TMON) in a single PowerPAK® MLP39-65 package. It delivers up to 80 A continuous output current at up to 2 MHz switching frequency for synchronous buck converters in CPU/GPU VRMs with 4.5 V–19 V input and 1.2 V–1.8 V output.
For engineers reviewing the SIC830ED-T1-GE3 datasheet, SIC830ED-T1-GE3 pinout, SIC830ED-T1-GE3 application, or SIC830ED-T1-GE3 equivalent, key selection criteria include its 5 V PWM logic compatibility, diode emulation mode via GLCTRL, <20 ns PWM propagation delay, integrated overtemperature/overcurrent fault alerts, and thermal monitoring capability for multi-phase power delivery systems.
Technical Context
The SIC830ED-T1-GE3 implements a fully integrated DrMOS architecture with TrenchFET® Gen IV MOSFETs optimized for 12 V–19 V input stages and 10–15 % duty-cycle operation. Its adaptive dead-time control and integrated bootstrap switch enable stable high-frequency operation up to 2 MHz while minimizing shoot-through risk.
It features tri-state 5 V PWM input support, 30 ns minimum controllable on-time, and real-time analog current sensing (IMON) scaled to inductor current. The TMON output provides linear voltage proportional to junction temperature, enabling closed-loop thermal throttling without external sensors.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Max Continuous Current | 80 A - supports single-phase VRM designs delivering >80 A per phase in server/desktop CPU/GPU applications |
| Input Voltage Range | 4.5 V to 19 V - compatible with 12 V intermediate bus architectures and wide-input industrial DC/DC systems |
| Switching Frequency | Up to 2 MHz - enables compact magnetics and high transient response in space-constrained VR modules |
| PWM Logic Level | 5 V with tri-state - interoperable with standard VR controller ICs including Intel VR13/VR14 compliant controllers |
| Diode Emulation Mode | Enabled via GLCTRL pin - improves light-load efficiency by disabling LS FET body diode conduction during discontinuous conduction mode |
| Thermal Monitoring | TMON analog output - provides linear voltage (0.5 V @ 25 °C, 10 mV/°C slope) for system-level thermal management |
| Current Monitoring | IMON analog output - delivers scalable voltage proportional to inductor current (typ. 100 mV/A) for real-time current telemetry |
Pinout & Package
Package: PowerPAK® MLP39-65, 5.0 mm × 6.0 mm × 0.75 mm, thermally enhanced QFN-style exposed-pad MLP with 39 terminals.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| VIN | High-side MOSFET drain input | Primary power input node connected to 4.5–19 V bus; ties directly to HS FET drain and BOOT capacitor positive |
| VOUT | Power stage output node | Switch node connecting HS source and LS drain; feeds output inductor and senses current via integrated shunt |
| PGND | Power ground reference | Low-impedance return path for HS and LS FETs; must be connected to thermal pad and system power ground plane |
| AGND | Analog ground reference | Isolated ground for IMON/TMON analog outputs and internal bias circuitry; requires separate low-noise connection to PGND at single point |
| PWM | Gate drive control input | Digital input accepting 5 V logic; controls HS/LS switching with <20 ns propagation delay and 30 ns min. on-time |
| GLCTRL | Diode emulation enable | Active-high signal enabling light-load diode emulation mode; disables LS FET during off-time to reduce reverse recovery loss |
| IMON | Current monitor output | Analog voltage output (0–1.2 V range) scaled to inductor current (100 mV/A typical); used for current telemetry or loop compensation |
| TMON | Temperature monitor output | Analog voltage output (0.5 V @ 25 °C, +10 mV/°C) representing die junction temperature; enables thermal derating without external sensor |
| OCFLAG | Overcurrent fault alert | Open-drain active-low flag indicating HS FET overcurrent or short-circuit condition; latched until reset by PWM toggle |
| OTFLAG | Overtemperature alert | Open-drain active-low flag triggered when junction temperature exceeds 150 °C; resets automatically after cooling |
Key Features
| Feature | Design Value |
|---|---|
| Integrated Schottky diode in LS FET | Reduces reverse recovery losses and EMI in high-dV/dt buck transitions, improving light-load efficiency |
| Adaptive dead-time control | Automatically adjusts HS/LS non-overlap time based on load and temperature to minimize conduction loss without shoot-through risk |
| Under-voltage lockout (UVLO) | Protects HS/LS FETs by disabling gate drive if VDRV or BOOT falls below 4.2 V, preventing partial turn-on and thermal runaway |
| Real-time IMON scaling | Delivers precise, temperature-stable current feedback (±5 % accuracy) without external sense resistor or amplifier |
| Tri-state PWM input | Allows seamless integration into multi-phase interleaved controllers by supporting high-impedance state during phase shedding |
Applications
| CPU Voltage Regulator Module | GPU Power Delivery System |
|---|---|
Use Scenario: High-current, fast-transient power delivery to modern x86 and ARM-based processors in servers and workstations. IC Role / Device Role / Timing Role: Single-phase VRPower® Smart Power Stage providing regulated 1.2 V output at up to 80 A with sub-100 ns load-step response. Use Value: Enables compact, high-efficiency 12 V input → 1.2 V output conversion with integrated current/thermal telemetry for dynamic voltage/frequency scaling. | Use Scenario: Multi-phase power stage in discrete or embedded GPU VRMs requiring tight voltage regulation and thermal awareness. IC Role / Device Role / Timing Role: Synchronous buck power stage operating at 600–800 kHz with diode emulation mode for improved idle efficiency. Use Value: Delivers >94 % peak efficiency at 1.8 V/40 A (800 kHz) while providing IMON/TMON signals for GPU firmware-controlled thermal throttling. |
| Memory Subsystem VRD | Industrial DC/DC VR Module |
Use Scenario: DDR5 memory channel VRDs requiring precise 1.1 V output with fast transient response and current reporting. IC Role / Device Role / Timing Role: High-density power stage supporting 10–15 % duty cycle operation at 12 V input, with 30 ns minimum on-time for fine-grained voltage control. Use Value: Supports JEDEC-compliant memory VRD specs with integrated OC/OT fault flags and analog current monitoring for memory controller telemetry. | Use Scenario: Compact, high-reliability DC/DC converter in industrial PLCs or telecom equipment with 4.5–19 V input range. IC Role / Device Role / Timing Role: Robust power stage with UVLO, OTP, and OC protection, rated for continuous 80 A operation in extended temperature environments. Use Value: Eliminates need for discrete MOSFETs, drivers, and sense components-reducing BOM count and layout complexity while maintaining full fault visibility. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar smart power stage applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SiC830AED-T1-GE3 | 3.3 V PWM logic input (vs. 5 V); identical package, current rating, and monitoring features | Required when interfacing with 3.3 V VR controllers (e.g., certain AMD or custom ASICs); not interoperable with 5 V PWM sources | Select SiC830AED-T1-GE3 only if system controller uses 3.3 V logic levels; otherwise SIC830ED-T1-GE3 is preferred for broadest controller compatibility. |
| IR35201MTRPBF | Legacy DrMOS with lower max current (60 A), no integrated TMON, and 1.2 V–1.8 V fixed VCC requirement | Lacks real-time thermal monitoring and diode emulation; suited for cost-sensitive legacy VRMs where IMON-only feedback suffices | Choose IR35201MTRPBF only for backward-compatible upgrades with existing 60 A designs; SIC830ED-T1-GE3 offers superior efficiency, telemetry, and thermal safety. |
Compared with SiC830AED-T1-GE3 and IR35201MTRPBF, the SIC830ED-T1-GE3 delivers higher current capacity, 5 V PWM flexibility, and integrated TMON for proactive thermal management-making it optimal for next-generation high-performance VRMs where efficiency, telemetry, and reliability are prioritized.
Availability
SIC830ED-T1-GE3 is available at Aetrix Electronics and suitable for CPU voltage regulator modules, GPU power delivery systems, and industrial DC/DC VR modules requiring stable component supply, long-term lifecycle support, and traceable sourcing.
Supply support for SIC830ED-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors and passive components, specializing in high-efficiency power solutions, precision sensing, and ruggedized packaging technologies.
The SiC830 product line is designed as VRPower® Smart Power Stages targeting high-current, high-frequency synchronous buck conversion in computing, networking, and industrial power systems-emphasizing integration, thermal intelligence, and controller interoperability.
FAQ
What is the maximum continuous output current rating of the SIC830ED-T1-GE3?
The SIC830ED-T1-GE3 is rated for 80 A continuous output current under specified thermal conditions (PCB copper area ≥ 400 cm², 2 oz Cu, 4-layer board). This rating assumes proper heatsinking via the exposed thermal pad and operation within the 4.5 V–19 V input range. Derating applies above 70 °C ambient or with reduced copper area. The SIC830ED-T1-GE3 achieves this using integrated TrenchFET® Gen IV MOSFETs and low-inductance MLP39-65 packaging.
Does the SIC830ED-T1-GE3 support both 3.3 V and 5 V PWM logic inputs?
No-the SIC830ED-T1-GE3 supports only 5 V PWM logic with tri-state capability. For 3.3 V PWM compatibility, Vishay offers the pin-compatible SiC830AED-T1-GE3 variant. Both share identical package, current rating, IMON/TMON functionality, and protection features, but differ exclusively in PWM logic voltage threshold and associated input buffer design. Using SIC830ED-T1-GE3 with a 3.3 V controller may result in unreliable switching or failure to enable.
How does the diode emulation mode function in the SIC830ED-T1-GE3?
The SIC830ED-T1-GE3 enables diode emulation mode via the GLCTRL pin, which disables the low-side MOSFET during light-load discontinuous conduction mode. This prevents reverse recovery current in the LS body diode, reducing switching loss and improving efficiency below ~10 % load. The SIC830ED-T1-GE3 implements this with internal timing control synchronized to PWM edges, eliminating need for external control logic while maintaining seamless transition between CCM and DCM operation.
What thermal protection features are integrated into the SIC830ED-T1-GE3?
The SIC830ED-T1-GE3 integrates dual thermal safeguards: an analog TMON output providing linear voltage proportional to junction temperature (0.5 V @ 25 °C, +10 mV/°C), and a digital OTFLAG open-drain alert activated at 150 °C junction temperature. The OTFLAG is self-resetting upon cooling, while TMON allows continuous thermal telemetry for predictive throttling. These features operate independently of external circuitry and are calibrated across process and temperature-ensuring reliable protection in the SIC830ED-T1-GE3 without added components.
Can the SIC830ED-T1-GE3 be used in multi-phase VRM designs?
Yes-the SIC830ED-T1-GE3 is explicitly designed for multi-phase synchronous buck VRMs in CPU, GPU, and memory applications. Its tri-state PWM input enables phase shedding, its <20 ns propagation delay ensures tight interleaving accuracy, and its IMON/TMON outputs provide per-phase telemetry for advanced digital controllers. The SIC830ED-T1-GE3's 5 mm × 6 mm footprint and thermal pad support dense, thermally balanced layouts essential for 4+ phase VRMs in space-constrained server and workstation motherboards.
SIC830ED-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- VRPower®
- Package/Case:
- 39-PowerVFQFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Output Configuration:
- High Side
- Applications:
- DC-DC Converters, Synchronous Buck Converter
- Interface:
- Logic, PWM
- Load Type:
- Inductive
- Technology:
- Power MOSFET
- Rds On (Typ):
- -
- Current - Output / Channel:
- 80A
- Current - Peak Output:
- -
- Voltage - Supply:
- 3.3V ~ 5V
- Voltage - Load:
- 19V
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Features:
- Bootstrap Circuit, Diode Emulation
- Fault Protection:
- Over Current, Over Temperature, UVLO
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® MLP39-65
SIC830ED-T1-GE3 FAQ
1.How can I place an order for SIC830ED-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIC830ED-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIC830ED-T1-GE3 reliable?
The price and inventory of SIC830ED-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIC830ED-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SIC830ED-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIC830ED-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIC830ED-T1-GE3?
SIC830ED-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIC830ED-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIC830ED-T1-GE3?
For technical support, including SIC830ED-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIC830ED-T1-GE3 requirements.
6.How does Aetrix verify that SIC830ED-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SIC830ED-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIC830ED-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SIC830ED-T1-GE3?
All SIC830ED-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIC830ED-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIC830ED-T1-GE3 part is unused and in its original packaging.
Return procedure for SIC830ED-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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