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Vishay Siliconix SIDR140DP-T1-GE3
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- Part No.:
- SIDR140DP-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SIDR140DP-T1-GE3.pdf
- Description:
- MOSFET N-CH 25V 79A/100A PPAK
- Quantity:
- Payment:
- Shipping:
Inventory:6,468
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Product details
Overview
SIDR140DP-T1-GE3 from Vishay Siliconix is an N-channel 25 V TrenchFET® Gen IV power MOSFET in PowerPAK® SO-8DC package, delivering RDS(on) = 0.67 mΩ at VGS = 10 V and 0.90 mΩ at VGS = 4.5 V, with 100 A continuous drain current (TC = 25 °C), optimized for high-efficiency synchronous rectification in DC/DC converters.
For engineers reviewing the SIDR140DP-T1-GE3 datasheet, SIDR140DP-T1-GE3 pinout, SIDR140DP-T1-GE3 application, or SIDR140DP-T1-GE3 equivalent, key selection criteria include its top-side cooling capability, low gate charge (Qg = 52.8 nC @ 4.5 V), 100% Rg and UIS tested reliability, and thermal resistance RthJC = 0.8 °C/W (drain).
Technical Context
This MOSFET employs TrenchFET® Gen IV process technology to achieve ultra-low on-resistance and optimized gate charge ratios (Qgd/Qgs) that reduce switching losses in high-frequency power stages. Its single-N-channel configuration supports unidirectional current flow with integrated body diode.
The PowerPAK® SO-8DC package features exposed copper drain pads on both top and bottom surfaces, enabling dual-sided thermal dissipation-critical for high-power-density applications where case temperature (TC) must be tightly controlled under 100 A load conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 25 V - Maximum drain-source blocking voltage; suitable for 12 V and 24 V input rail systems with margin. |
| RDS(on) @ 10 V | 0.67 mΩ - Enables <1 W conduction loss at 100 A, critical for >95 % efficiency in high-current buck converters. |
| RDS(on) @ 4.5 V | 0.90 mΩ - Ensures robust operation with 5 V gate drive, supporting logic-level control without level-shifting. |
| Qg @ 4.5 V | 52.8 nC - Low total gate charge reduces driver power demand and enables fast switching at >1 MHz frequencies. |
| ID (continuous) | 100 A @ TC = 25 °C - Rated for high-current output stages; derates to 63 A at TC = 70 °C per thermal limits. |
| RthJC (drain) | 0.8 °C/W (typ.) - Enables direct heatsinking to PCB copper or external cooler via top-side drain pad. |
| VGS(th) | 1.0–2.1 V - Tight threshold range ensures predictable turn-on with standard 3.3 V or 5 V controllers. |
| Body diode VSD | 0.69 V (typ.) @ IS = 5 A - Low forward drop improves reverse recovery performance in synchronous rectifier mode. |
Pinout & Package
Package: PowerPAK® SO-8DC - leadless, double-cooling surface-mount package with exposed drain terminals on top and bottom; 5.00 mm × 6.00 mm footprint; 0.56 mm nominal height.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 | Source (S) | Common source connection; electrically tied internally; used for low-side return path and thermal conduction to PCB. |
| 5, 6, 7, 8 | Drain (D) | Common drain connection; exposed copper on top and bottom for dual-surface heat extraction; primary current path into device. |
| 4 (top-side marking) | Gate (G) | Single gate terminal located at corner opposite drain; requires controlled 1 Ω gate resistor to manage dV/dt and oscillation. |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® Gen IV process | Delivers industry-leading RDS(on) × Qg figure-of-merit for minimal conduction + switching loss trade-off. |
| Top-side cooling | Exposed top drain pad allows direct thermal interface to heatsink or thermal pad, increasing power handling by ≥30 % vs. standard SO-8. |
| 100 % Rg tested | Guarantees gate resistance ≤ 0.75 Ω, ensuring consistent switching speed and driver compatibility across production lots. |
| 100 % UIS tested | Validated avalanche energy rating of 180 mJ ensures ruggedness during transient overvoltage events in DC/DC power stages. |
| Lead (Pb)-free & halogen-free | Complies with RoHS Directive 2011/65/EU and Vishay's material categorization standard (doc# 99912). |
Applications
| Synchronous Buck Converter | Synchronous Rectification |
|---|---|
Use Scenario: High-efficiency 12 V → 1.2 V point-of-load conversion in server VRMs and AI accelerators. IC Role / Device Role: Low-side switch in dual-MOSFET synchronous buck stage, replacing Schottky diode. Use Value: Reduces conduction loss by >60 % vs. 0.8 mΩ alternatives at 80 A, enabling >96 % peak efficiency at 500 kHz. |
Use Scenario: Secondary-side rectification in isolated 48 V → 12 V LLC resonant converters for telecom power supplies. IC Role / Device Role: Synchronous rectifier replacing 40 V Schottky, driven by transformer-coupled gate signal. Use Value: Achieves <0.7 V body diode forward drop and fast trr = 77 ns, minimizing reverse recovery loss and EMI. |
| OR-ing Circuit | Battery Management System |
Use Scenario: Redundant 28 V power rail OR-ing in avionics and industrial control cabinets. IC Role / Device Role: Back-to-back configured N-channel MOSFET for ideal diode function with reverse current blocking. Use Value: Enables <10 mΩ effective forward resistance and <1 μs turn-off, eliminating thermal runaway risk in parallel power paths. |
Use Scenario: Cell-balancing and protection FET in 4S Li-ion battery packs for medical portable devices. IC Role / Device Role: High-current discharge switch and short-circuit protection element in BMS front-end. Use Value: Supports 100 A continuous load with 180 mJ avalanche rating, surviving fault currents up to 500 A (100 μs pulse). |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRL1404ZPBF | RDS(on) = 3.2 mΩ @ 10 V; TO-220 package; no top-side cooling; Qg = 71 nC. | Larger footprint; limited to ≤40 A continuous; unsuitable for >500 kHz switching due to higher Qg. | Choose only when board space permits through-hole mounting and thermal mass is available. |
| DMTH10H025LPS-13 | RDS(on) = 0.75 mΩ @ 10 V; PowerPAK 8x8 package; RthJC = 0.55 °C/W; Qg = 65 nC. | Higher thermal performance but larger 8x8 mm footprint; not pin-compatible with SO-8DC layout. | Select when junction-to-case thermal resistance <0.6 °C/W is mandatory and PCB area allows 8x8 mm land pattern. |
Compared with IRL1404ZPBF and DMTH10H025LPS-13, the SIDR140DP-T1-GE3 uniquely balances ultra-low RDS(on), compact SO-8DC form factor, and dual-surface cooling-making it optimal for space-constrained, high-current synchronous rectifiers where thermal headroom is limited.
Availability
SIDR140DP-T1-GE3 is available at Aetrix Electronics and suitable for synchronous buck converters, OR-ing circuits, and battery management systems requiring stable component supply, full traceability, and long-term industrial lifecycle support.
Supply support for SIDR140DP-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for power, signal, and sensing applications.
The SIDR140DP-T1-GE3 belongs to Vishay's TrenchFET® Gen IV power MOSFET family, engineered specifically for high-efficiency, high-current DC/DC conversion in datacenter, telecom, and industrial power systems.
FAQ
What is the maximum continuous drain current rating for SIDR140DP-T1-GE3?
The SIDR140DP-T1-GE3 is rated for 100 A continuous drain current at case temperature TC = 25 °C, derating to 63 A at TC = 70 °C. This rating assumes proper PCB copper area and thermal vias per Vishay's recommended pad layout (doc# 72599) and is validated under steady-state conditions with adequate heatsinking.
Does SIDR140DP-T1-GE3 support 5 V gate drive?
Yes, the SIDR140DP-T1-GE3 is fully specified for 4.5 V gate drive, with RDS(on) = 0.90 mΩ max at VGS = 4.5 V and ID = 20 A. Its VGS(th) range of 1.0–2.1 V ensures reliable enhancement-mode turn-on using standard 5 V or 3.3 V controllers without gate boosting.
How does the top-side cooling feature of SIDR140DP-T1-GE3 improve thermal performance?
The top-side cooling feature of SIDR140DP-T1-GE3 uses an exposed copper drain pad on the package top surface, allowing direct thermal interface to a heatsink or thermal pad. This reduces effective RthJA by up to 40 % compared to bottom-only cooling, enabling higher sustained current in thermally constrained layouts.
Is SIDR140DP-T1-GE3 suitable for synchronous rectification in LLC resonant converters?
Yes, the SIDR140DP-T1-GE3 is explicitly listed for synchronous rectification in Vishay's official applications. Its low Qgd/Qgs ratio, fast body diode recovery (trr = 77 ns typ.), and 180 mJ avalanche rating make it well-suited for high-frequency LLC secondary-side rectification with transformer-driven gate control.
What is the gate resistance specification for SIDR140DP-T1-GE3?
The SIDR140DP-T1-GE3 has a typical gate resistance (Rg) of 0.38 Ω, with a guaranteed maximum of 0.75 Ω (tested 100 %). This low Rg ensures fast, consistent switching transitions and simplifies gate driver design-especially important for high-frequency (>1 MHz) operation where gate ringing must be minimized.
SIDR140DP-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET® Gen IV
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 25 V
- Current - Continuous Drain (Id) @ 25°C:
- 79A (Ta), 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 0.67mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id:
- 2.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 170 nC @ 10 V
- Vgs (Max):
- +20V, -16V
- Input Capacitance (Ciss) (Max) @ Vds:
- 8150 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 6.25W (Ta), 125W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8DC
SIDR140DP-T1-GE3 FAQ
1.How can I place an order for SIDR140DP-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIDR140DP-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIDR140DP-T1-GE3 reliable?
The price and inventory of SIDR140DP-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIDR140DP-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SIDR140DP-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIDR140DP-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIDR140DP-T1-GE3?
SIDR140DP-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIDR140DP-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIDR140DP-T1-GE3?
For technical support, including SIDR140DP-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIDR140DP-T1-GE3 requirements.
6.How does Aetrix verify that SIDR140DP-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SIDR140DP-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIDR140DP-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SIDR140DP-T1-GE3?
All SIDR140DP-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIDR140DP-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIDR140DP-T1-GE3 part is unused and in its original packaging.
Return procedure for SIDR140DP-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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