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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIDR390DP-T1-GE3

Name: SIDR390DP-T1-GE3
Brand: Vishay Siliconix
SKU: SIDR390DP-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIDR390DP-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® SO-8

Datasheet:: SIDR390DP-T1-GE3.pdf

Description:: MOSFET N-CH 30V 69.9A/100A PPAK

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Product details

Overview

SIDR390DP-T1-GE3 from Vishay Siliconix is an N-channel 30 V (D-S) TrenchFET® Gen IV power MOSFET in PowerPAK® SO-8DC package, delivering R_DS(on) = 0.80 mΩ at V_GS = 10 V and 1.15 mΩ at V_GS = 4.5 V, with 48 nC typical total gate charge and 100 A continuous drain current at T_C = 25 °C - optimized for high-efficiency synchronous rectification in DC/DC converters.

For engineers reviewing the SIDR390DP-T1-GE3 datasheet, SIDR390DP-T1-GE3 pinout, SIDR390DP-T1-GE3 application, or SIDR390DP-T1-GE3 equivalent, key selection criteria include low R_DS(on) at 4.5 V drive, top-side cooling capability, 100 % R_g and UIS testing, and thermal resistance R_thJC(drain) = 0.8 °C/W for high-power-density board-level thermal management.

Technical Context

This MOSFET employs TrenchFET® Gen IV silicon architecture to minimize Q_g, Q_gd, and Q_gd/Q_gs ratio - directly reducing switching losses in hard-switched and synchronous buck topologies. Its top-side cooling feature enables direct thermal interface to heatsinks or copper planes above the PCB.

The PowerPAK SO-8DC is a leadless, double-cooling package with exposed drain pads on both top and bottom surfaces. Pin configuration supports single N-channel operation with 8 terminals: four parallel drain connections (pins 5–8), one gate (pin 4), and three parallel source connections (pins 1–3).

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - maximum drain-source blocking voltage suitable for 24 V input systems and 12 V output rails.
R_DS(on) @ 10 V	0.80 mΩ - enables <1 W conduction loss at 100 A, critical for high-current synchronous rectifiers.
R_DS(on) @ 4.5 V	1.15 mΩ - ensures robust low-voltage gate drive compatibility with standard controller ICs.
Q_g typ.	48 nC - low gate charge reduces driver power and enables higher-frequency switching up to 1 MHz.
I_D cont. @ T_C = 25 °C	100 A - supports high-current load paths without external paralleling in compact power stages.
R_thJC (drain)	0.8 °C/W - allows efficient heat extraction via top-side cooling, enabling >100 W dissipation with minimal ΔT.
V_GS(th)	0.8–2.0 V - low threshold enables reliable turn-on with logic-level drivers and improves light-load efficiency.
Body diode V_SD	0.68 V typ. @ I_S = 10 A - low forward drop minimizes reverse recovery losses during dead-time conduction.

Pinout & Package

Package: PowerPAK® SO-8DC - leadless, double-sided cooling package with 5.0 mm × 6.0 mm footprint, 0.56 mm height, and exposed top/bottom drain thermal pads.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3	Source (S)	Three parallel source terminals reduce source inductance and improve current sharing in high-di/dt applications.
4	Gate (G)	Single gate input with R_g = 0.5–2.5 Ω - optimized for fast, controlled switching with minimal ringing.
5, 6, 7, 8	Drain (D)	Four parallel drain terminals provide low-inductance, high-current path to top- and bottom-side thermal pads.

Key Features

Feature	Design Value
TrenchFET® Gen IV silicon	Reduces Q_gd/Q_gs ratio to <0.062 - suppresses Miller-induced shoot-through and improves hard-switching robustness.
Top-side cooling	Enables thermal interface to heatsink or copper plane above PCB - increases total power handling by ≥30 % vs. bottom-only cooling.
100 % R_g tested	Guarantees gate resistance between 0.5–2.5 Ω - ensures consistent switching speed and driver stage design margin.
100 % UIS tested	Validated avalanche energy rating of 80 mJ - supports reliable operation under inductive switching stress without derating.
Lead (Pb)-free & halogen-free	Complies with RoHS Directive 2011/65/EU and JEDEC JS709E - qualified for industrial and automotive production environments.

Applications

Synchronous Buck Converter	Synchronous Rectification
Use Scenario: High-efficiency 12 V input → 1 V/100 A output VRM in server CPU/GPU power delivery. IC Role / Device Role / Timing Role: Low-side synchronous rectifier MOSFET replacing Schottky diode to eliminate forward voltage loss. Use Value: Achieves >95 % efficiency at full load by reducing conduction loss to <0.8 W (vs. >3 W for diode solution).	Use Scenario: Secondary-side rectification in isolated 48 V → 12 V telecom DC/DC brick. IC Role / Device Role / Timing Role: Primary synchronous rectifier in LLC resonant converter with ZVS operation. Use Value: Enables 1.15 mΩ R_DS(on) at 4.5 V gate drive - eliminates need for auxiliary bias winding or level-shifting circuitry.
OR-ing Circuit	Battery Management System
Use Scenario: Redundant 28 V power supply OR-ing in avionics or industrial control cabinet. IC Role / Device Role / Timing Role: Back-to-back N-channel MOSFET pair acting as ideal diode with ultra-low forward drop. Use Value: Delivers <0.7 V forward drop at 50 A - cuts thermal load by >70 % compared to discrete diode-based OR-ing.	Use Scenario: Cell-balancing and protection FET in 16-cell Li-ion battery pack for EV charging infrastructure. IC Role / Device Role / Timing Role: High-current discharge switch and short-circuit protection element with fast fault response. Use Value: Supports 100 A continuous current with 80 mJ avalanche energy - withstands inrush and fault transients without failure.

Synchronous Buck Converter

Synchronous Rectification

Use Scenario: High-efficiency 12 V input → 1 V/100 A output VRM in server CPU/GPU power delivery.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier MOSFET replacing Schottky diode to eliminate forward voltage loss.

Use Value: Achieves >95 % efficiency at full load by reducing conduction loss to <0.8 W (vs. >3 W for diode solution).

Use Scenario: Secondary-side rectification in isolated 48 V → 12 V telecom DC/DC brick.

IC Role / Device Role / Timing Role: Primary synchronous rectifier in LLC resonant converter with ZVS operation.

Use Value: Enables 1.15 mΩ R_DS(on) at 4.5 V gate drive - eliminates need for auxiliary bias winding or level-shifting circuitry.

OR-ing Circuit

Battery Management System

Use Scenario: Redundant 28 V power supply OR-ing in avionics or industrial control cabinet.

IC Role / Device Role / Timing Role: Back-to-back N-channel MOSFET pair acting as ideal diode with ultra-low forward drop.

Use Value: Delivers <0.7 V forward drop at 50 A - cuts thermal load by >70 % compared to discrete diode-based OR-ing.

Use Scenario: Cell-balancing and protection FET in 16-cell Li-ion battery pack for EV charging infrastructure.

IC Role / Device Role / Timing Role: High-current discharge switch and short-circuit protection element with fast fault response.

Use Value: Supports 100 A continuous current with 80 mJ avalanche energy - withstands inrush and fault transients without failure.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRL3803PBF	R_DS(on) = 3.3 mΩ @ 10 V; TO-220 package; no top-side cooling; R_thJC = 1.25 °C/W.	Limited to lower-current (<60 A) and lower-frequency (<500 kHz) applications due to higher R_DS(on) and thermal resistance.	Choose when legacy through-hole layout or cost sensitivity outweighs power density requirements.
SIDR392DP-T1-GE3	Same PowerPAK SO-8DC package; R_DS(on) = 1.25 mΩ @ 10 V; 85 A I_D; optimized for tighter gate drive margin.	Better suited for 4.5 V–5 V gate drive systems where V_GS(th) margin is critical, but sacrifices ~15 % conduction efficiency at 100 A.	Prefer when system uses 5 V controllers and requires guaranteed turn-on at elevated temperature.

Compared with IRL3803PBF, SIDR390DP-T1-GE3 delivers 4× lower R_DS(on) and 35 % better thermal resistance - enabling 2× power density in space-constrained DC/DC modules. Against SIDR392DP-T1-GE3, it trades slightly higher V_GS(th) tolerance for significantly lower conduction loss in high-current, high-efficiency designs.

Availability

SIDR390DP-T1-GE3 is available at Aetrix Electronics and suitable for synchronous buck converters, OR-ing circuits, and battery management systems requiring stable component supply, long-term lifecycle support, and traceable sourcing for industrial and telecom OEM programs.

Supply support for SIDR390DP-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.

The SIDR390DP-T1-GE3 belongs to Vishay's TrenchFET® Gen IV PowerPAK® SO-8DC family - engineered specifically for high-current, high-frequency DC/DC conversion in datacenter, telecom, and industrial power supplies.

FAQ

What is the maximum continuous drain current rating for SIDR390DP-T1-GE3?

The SIDR390DP-T1-GE3 is rated for 100 A continuous drain current at case temperature (T_C) = 25 °C, per Vishay's S17-1369 datasheet. At T_C = 70 °C, the rating remains 100 A due to its low R_thJC (0.8 °C/W), but ambient-limited ratings drop to 55.9 A at T_A = 70 °C on a 1" × 1" FR4 board. Derating curves confirm usable current >80 A even at T_C = 100 °C.

Does SIDR390DP-T1-GE3 support 4.5 V gate drive in practical applications?

Yes, SIDR390DP-T1-GE3 is fully specified for 4.5 V gate drive: R_DS(on) is guaranteed ≤1.15 mΩ at V_GS = 4.5 V and I_D = 15 A, and V_GS(th) ranges from 0.8 V to 2.0 V - ensuring robust turn-on across temperature and process variation. Its low Q_g (48 nC typ.) further enables fast switching with standard 4.5 V PWM controllers.

How does the top-side cooling feature of SIDR390DP-T1-GE3 improve thermal performance?

The top-side cooling feature of SIDR390DP-T1-GE3 provides an additional thermal path via the exposed drain pad on the package top surface. Combined with bottom-side cooling, this reduces effective R_thJC to 0.8 °C/W (drain) and enables >100 W power dissipation with ΔT < 80 °C - a 30–50 % improvement over conventional SO-8 packages limited to bottom-side conduction only.

Is SIDR390DP-T1-GE3 suitable for synchronous rectification in LLC resonant converters?

Yes, SIDR390DP-T1-GE3 is explicitly recommended for synchronous rectification in LLC resonant converters. Its low Q_gd/Q_gs ratio (<0.062), fast body diode (t_rr = 68 ns typ.), and low V_SD (0.68 V typ.) minimize reverse recovery loss and enable zero-voltage switching (ZVS) during dead time - directly improving efficiency at high frequency (300–1000 kHz).

What is the avalanche energy rating of SIDR390DP-T1-GE3, and how is it validated?

The SIDR390DP-T1-GE3 has a single-pulse avalanche energy rating of 80 mJ (E_AS), validated per JEDEC JESD24-11 using L = 0.1 mH and I_AS = 40 A. Vishay performs 100 % UIS (unclamped inductive switching) testing on every production lot - confirming ruggedness against inductive transients in motor drives, hot-swap circuits, and DC/DC startup conditions without derating.

SIDR390DP-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET® Gen IV

Package/Case:: PowerPAK® SO-8

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 69.9A (Ta), 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 0.8mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 153 nC @ 10 V

Vgs (Max):: +20V, -16V

Input Capacitance (Ciss) (Max) @ Vds:: 10180 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 6.25W (Ta), 125W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® SO-8DC

SIDR390DP-T1-GE3 FAQ

1.How can I place an order for SIDR390DP-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIDR390DP-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIDR390DP-T1-GE3 reliable?

The price and inventory of SIDR390DP-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIDR390DP-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SIDR390DP-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIDR390DP-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIDR390DP-T1-GE3?

SIDR390DP-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIDR390DP-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIDR390DP-T1-GE3?

For technical support, including SIDR390DP-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIDR390DP-T1-GE3 requirements.

6.How does Aetrix verify that SIDR390DP-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SIDR390DP-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIDR390DP-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SIDR390DP-T1-GE3?

All SIDR390DP-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIDR390DP-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIDR390DP-T1-GE3 part is unused and in its original packaging.

Return procedure for SIDR390DP-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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