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Vishay Siliconix SIDR402DP-T1-GE3

Name: SIDR402DP-T1-GE3
Brand: Vishay Siliconix
SKU: SIDR402DP-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIDR402DP-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® SO-8

Datasheet:: SIDR402DP-T1-GE3.pdf

Description:: MOSFET N-CH 40V 64.6A/100A PPAK

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Product details

Overview

SIDR402DP-T1-GE3 from Vishay Siliconix is an N-channel 40 V (D-S) TrenchFET® Gen IV power MOSFET in PowerPAK® SO-8DC package, delivering R_DS(on) = 0.00088 Ω at V_GS = 10 V and Q_g = 53 nC (typ.) at 4.5 V drive, optimized for high-efficiency synchronous rectification and load switching in DC/DC converters up to 100 A continuous drain current.

For engineers reviewing the SIDR402DP-T1-GE3 datasheet, SIDR402DP-T1-GE3 pinout, SIDR402DP-T1-GE3 application, or SIDR402DP-T1-GE3 equivalent, this page provides verified thermal resistance values (R_thJC = 0.8 °C/W max to drain), top-side cooling capability, 100% R_g and UIS testing, and validated body diode recovery (Q_rr = 90–180 nC, t_rr = 65–130 ns) - all critical for high-density power stage design.

Technical Context

This MOSFET uses TrenchFET® Gen IV silicon architecture with tuned R_DS(on)–Q_oss figure-of-merit for minimal switching losses in hard-switched and synchronous rectifier topologies. Its gate threshold voltage (V_GS(th) = 1.1–2.3 V) enables robust 4.5 V logic-level drive compatibility while maintaining low leakage (I_DSS ≤ 1 μA at 40 V).

The PowerPAK® SO-8DC package integrates dual-sided thermal paths: bottom-side copper drain paddle for PCB conduction and exposed top-side copper for direct heatsink attachment. Thermal resistance from junction to case (drain) is rated at 0.8–1.0 °C/W steady-state, enabling high-power operation without discrete heatsinks in space-constrained applications.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum blocking voltage suitable for 12 V and 24 V input DC/DC stages and battery management systems
R_DS(on) @ 10 V	0.00088 Ω - Enables <1 W conduction loss at 100 A, critical for >95% efficiency in high-current synchronous rectifiers
R_DS(on) @ 4.5 V	0.00116 Ω - Ensures low on-resistance under standard logic-level gate drive, reducing need for level-shifting circuitry
Q_g @ 4.5 V	53 nC (typ.) - Low gate charge minimizes driver power and enables fast turn-on (<100 ns rise time) for high-frequency operation
I_D (continuous)	100 A @ T_C = 25 °C - Supports high-current load switching and OR-ing without parallel devices
Q_rr	90–180 nC - Quantified reverse recovery charge enables accurate loss modeling in synchronous rectifier designs
R_thJC (drain)	0.8–1.0 °C/W - Confirmed junction-to-case thermal path supports direct thermal interface to heatsink or copper plane

Pinout & Package

Package: PowerPAK® SO-8DC - leadless, double-cooling surface-mount package with exposed drain paddle on bottom and top-side copper for thermal enhancement. Dimensions: 6.15 mm × 5.15 mm × 0.56 mm (L × W × H), 8-terminal configuration.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 8	Source (S)	Common source connection; electrically tied to internal source metallization and bottom-side thermal pad
4	Gate (G)	Control terminal; requires <2.3 V threshold to initiate conduction; gate resistance R_g = 0.3–1.5 Ω
5, 6, 7	Drain (D)	Main power path; connected to top- and bottom-side exposed copper for dual thermal dissipation paths

Key Features

Feature	Design Value
TrenchFET® Gen IV silicon	Delivers industry-leading R_DS(on)–Q_g and R_DS(on)–Q_oss FOMs for reduced conduction + switching losses
Top-side cooling capability	Exposed top copper allows direct thermal interface to heatsink or metal enclosure, supplementing PCB conduction
100% R_g and UIS tested	Ensures gate robustness against transient overvoltage and ruggedness against unclamped inductive switching stress
Low V_SD body diode	V_SD = 0.73–1.1 V @ I_S = 10 A - Reduces reverse conduction loss during dead-time in synchronous rectifiers
Lead (Pb)-free & halogen-free	Complies with RoHS Directive 2011/65/EU and Vishay's material categorization per doc# 99912

Applications

Synchronous Rectification	OR-ing Circuit
Use Scenario: Used as secondary-side switch in isolated DC/DC converters (e.g., 48 V to 12 V telecom PSUs) to replace Schottky diodes. IC Role / Device Role / Timing Role: N-channel power MOSFET operating in synchronous rectifier mode, driven by transformer-coupled or controller-synchronized gate signals. Use Value: Achieves <0.8 mΩ on-resistance at 10 V drive, cutting conduction loss by >60% vs. 40 V Schottky diodes, directly improving system efficiency above 95%.	Use Scenario: Deployed in redundant 12 V or 48 V power supply backplanes where multiple sources feed a common bus. IC Role / Device Role / Timing Role: Low-R_DS(on) N-channel MOSFET acting as ideal diode, controlled by external OR-ing controller to prevent backfeed and enable hot-swap. Use Value: R_DS(on) = 0.00116 Ω @ 4.5 V ensures <1.2 W loss at 100 A, minimizing voltage drop and thermal rise versus discrete diode solutions.
High-Power-Density DC/DC	Battery Management System (BMS)
Use Scenario: Primary high-side or low-side switch in compact 100 A POL modules for AI accelerators and server VRMs. IC Role / Device Role / Timing Role: High-current power switch leveraging top- and bottom-side thermal paths to sustain >80 W dissipation in <1 cm² footprint. Use Value: Junction-to-case (drain) thermal resistance of 0.8 °C/W enables stable operation at T_J < 125 °C with only 20 °C temperature rise across the thermal interface.	Use Scenario: Cell-balancing or main pack disconnect switch in EV traction battery packs and industrial energy storage systems. IC Role / Device Role / Timing Role: Load switch controlling high-current discharge/charge paths; body diode supports bidirectional current flow during balancing. Use Value: Body diode reverse recovery charge Q_rr = 90–180 nC and t_rr = 65–130 ns allow predictable snubberless operation in active balancing circuits.

Synchronous Rectification

OR-ing Circuit

Use Scenario: Used as secondary-side switch in isolated DC/DC converters (e.g., 48 V to 12 V telecom PSUs) to replace Schottky diodes.

IC Role / Device Role / Timing Role: N-channel power MOSFET operating in synchronous rectifier mode, driven by transformer-coupled or controller-synchronized gate signals.

Use Value: Achieves <0.8 mΩ on-resistance at 10 V drive, cutting conduction loss by >60% vs. 40 V Schottky diodes, directly improving system efficiency above 95%.

Use Scenario: Deployed in redundant 12 V or 48 V power supply backplanes where multiple sources feed a common bus.

IC Role / Device Role / Timing Role: Low-R_DS(on) N-channel MOSFET acting as ideal diode, controlled by external OR-ing controller to prevent backfeed and enable hot-swap.

Use Value: R_DS(on) = 0.00116 Ω @ 4.5 V ensures <1.2 W loss at 100 A, minimizing voltage drop and thermal rise versus discrete diode solutions.

High-Power-Density DC/DC

Battery Management System (BMS)

Use Scenario: Primary high-side or low-side switch in compact 100 A POL modules for AI accelerators and server VRMs.

IC Role / Device Role / Timing Role: High-current power switch leveraging top- and bottom-side thermal paths to sustain >80 W dissipation in <1 cm² footprint.

Use Value: Junction-to-case (drain) thermal resistance of 0.8 °C/W enables stable operation at T_J < 125 °C with only 20 °C temperature rise across the thermal interface.

Use Scenario: Cell-balancing or main pack disconnect switch in EV traction battery packs and industrial energy storage systems.

IC Role / Device Role / Timing Role: Load switch controlling high-current discharge/charge paths; body diode supports bidirectional current flow during balancing.

Use Value: Body diode reverse recovery charge Q_rr = 90–180 nC and t_rr = 65–130 ns allow predictable snubberless operation in active balancing circuits.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiR402DP-T1-GE3	Same die, identical R_DS(on), Q_g, and thermal specs; differs only in tape-and-reel packaging (no functional difference)	No application impact - fully interchangeable in layout and electrical performance	Select based on procurement preference; both share same Vishay part family and qualification.
IRF7832TRPBF	Higher R_DS(on) (1.2 mΩ @ 10 V), larger Q_g (72 nC), no top-side cooling; SO-8 package with lower thermal performance (R_thJC = 2.5 °C/W)	Not suitable for >60 A continuous or top-cooled thermal designs; limited to lower-power density applications	Only consider if board-level thermal constraints preclude top-side heatsinking and peak current <60 A.

Compared with SiR402DP-T1-GE3, the SIDR402DP-T1-GE3 offers identical silicon performance but distinct ordering code for traceability; versus IRF7832TRPBF, it delivers 30% lower conduction loss, 26% lower gate charge, and 68% better junction-to-case thermal resistance - making it superior for high-current, high-efficiency, thermally constrained designs.

Availability

SIDR402DP-T1-GE3 is available at Aetrix Electronics and suitable for high-efficiency DC/DC converters, redundant power OR-ing systems, and battery protection circuits requiring stable component supply, long-term lifecycle support, and consistent parametric performance across production lots.

Supply support for SIDR402DP-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on high-reliability, high-efficiency, and thermally optimized components.

The SIDR402DP-T1-GE3 belongs to Vishay's TrenchFET® Gen IV PowerPAK® SO-8DC family, engineered specifically for high-current, high-frequency power conversion where dual-sided thermal management and ultra-low R_DS(on) are essential.

FAQ

What is the maximum continuous drain current rating for SIDR402DP-T1-GE3?

The SIDR402DP-T1-GE3 is rated for 100 A continuous drain current at case temperature T_C = 25 °C, derating linearly to 100 A at T_C = 70 °C per the Absolute Maximum Ratings table. This rating assumes proper thermal management via both bottom-side PCB copper and top-side heatsinking, leveraging its PowerPAK® SO-8DC dual-cooling structure.

Does SIDR402DP-T1-GE3 support 4.5 V logic-level gate drive?

Yes, the SIDR402DP-T1-GE3 is fully specified for 4.5 V gate drive: R_DS(on) is guaranteed at ≤0.00116 Ω under V_GS = 4.5 V and I_D = 15 A, and V_GS(th) ranges from 1.1 V to 2.3 V, ensuring reliable turn-on with standard 4.5 V microcontroller or gate driver outputs without level-shifting circuitry.

What is the thermal resistance from junction to case (drain) for SIDR402DP-T1-GE3?

The SIDR402DP-T1-GE3 has a maximum junction-to-case (drain) thermal resistance R_thJC of 1.0 °C/W under steady-state conditions, with typical value of 0.8 °C/W. This low value is enabled by the exposed drain paddle on both top and bottom surfaces of the PowerPAK® SO-8DC package, allowing efficient heat transfer to heatsinks or PCB copper planes.

Is SIDR402DP-T1-GE3 suitable for synchronous rectification in 48 V to 12 V converters?

Yes, the SIDR402DP-T1-GE3 is explicitly recommended for synchronous rectification applications, including 48 V to 12 V isolated DC/DC converters. Its 40 V V_DS, low R_DS(on) (0.00088 Ω @ 10 V), and fast body diode (t_rr = 65–130 ns) minimize conduction and reverse recovery losses, directly supporting >95% efficiency targets in high-current designs.

What does "top side cooling feature" mean for SIDR402DP-T1-GE3?

The "top side cooling feature" refers to the exposed copper drain area on the top surface of the PowerPAK® SO-8DC package. Unlike standard SO-8 devices, the SIDR402DP-T1-GE3 allows direct thermal interface to a heatsink or metal enclosure from above, supplementing bottom-side PCB conduction - effectively doubling thermal dissipation capacity without increasing footprint.

SIDR402DP-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET® Gen IV

Package/Case:: PowerPAK® SO-8

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 64.6A (Ta), 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 0.88mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 2.3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 165 nC @ 10 V

Vgs (Max):: +20V, -16V

Input Capacitance (Ciss) (Max) @ Vds:: 9100 pF @ 20 V

FET Feature:: -

Power Dissipation (Max):: 6.25W (Ta), 125W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® SO-8DC

SIDR402DP-T1-GE3 FAQ

1.How can I place an order for SIDR402DP-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIDR402DP-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIDR402DP-T1-GE3 reliable?

The price and inventory of SIDR402DP-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIDR402DP-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SIDR402DP-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIDR402DP-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIDR402DP-T1-GE3?

SIDR402DP-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIDR402DP-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIDR402DP-T1-GE3?

For technical support, including SIDR402DP-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIDR402DP-T1-GE3 requirements.

6.How does Aetrix verify that SIDR402DP-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SIDR402DP-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIDR402DP-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SIDR402DP-T1-GE3?

All SIDR402DP-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIDR402DP-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIDR402DP-T1-GE3 part is unused and in its original packaging.

Return procedure for SIDR402DP-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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