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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIDR402DP-T1-RE3

Name: SIDR402DP-T1-RE3
Brand: Vishay Siliconix
SKU: SIDR402DP-T1-RE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIDR402DP-T1-RE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® SO-8

Datasheet:: SIDR402DP-T1-RE3.pdf

Description:: N-CHANNEL 40-V (D-S) MOSFET

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Product details

Overview

SIDR402DP-T1-RE3 from Vishay Siliconix is an N-channel 40 V (D-S) TrenchFET® Gen IV power MOSFET in PowerPAK® SO-8DC package, delivering R_DS(on) = 0.00088 Ω at V_GS = 10 V and 0.00116 Ω at V_GS = 4.5 V, with 100 A continuous drain current (T_J = 150 °C), optimized for high-efficiency synchronous rectification and OR-ing in server/telecom DC/DC converters.

For engineers reviewing the SIDR402DP-T1-RE3 datasheet, SIDR402DP-T1-RE3 pinout, SIDR402DP-T1-RE3 application, or SIDR402DP-T1-RE3 equivalent, this device is selected for low R_DS(on)–Q_g and R_DS(on)–Q_oss figure-of-merit, top-side cooling capability, and 100% R_g/UIS testing - critical for high-density power stages requiring thermal headroom and avalanche robustness.

Technical Context

This MOSFET employs TrenchFET® Gen IV silicon architecture to minimize conduction and switching losses simultaneously, with gate charge Q_g = 53 nC (typ.) at V_GS = 4.5 V and Q_gd = 9.5 nC, enabling fast, efficient hard-switching in 48 V input buck converters. Its Cr_ss/C_iss ratio of 0.024–0.048 supports stable gate drive under high dv/dt conditions.

The PowerPAK® SO-8DC package features exposed copper drain pads on both top and bottom surfaces, enabling dual-sided thermal management - junction-to-case (drain) R_thJC = 0.8 °C/W (typ.) - and supports high-current operation without solder fillet requirement at the singulated copper tip per Vishay specification.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum drain-source blocking voltage; suitable for 36 V nominal bus systems with margin.
R_DS(on) @ 10 V	0.00088 Ω - Enables <1 W conduction loss at 33 A RMS in 48 V/1 kW LLC secondary side.
R_DS(on) @ 4.5 V	0.00116 Ω - Ensures robust turn-on with standard 5 V gate drivers in synchronous buck controllers.
Q_g (4.5 V)	53 nC - Low gate charge reduces driver power loss and enables >1 MHz switching in high-frequency DC/DC.
I_D (cont)	100 A @ T_C = 25 °C - Supports high-current single-phase power stages without paralleling.
E_AS	125 mJ - Avalanche energy rating allows reliable operation during transient overvoltage events in motor drives.
R_thJC (drain)	0.8 °C/W - Enables direct heatsink mounting to top-side drain pad for enhanced thermal path beyond PCB copper.

Pinout & Package

Package: PowerPAK® SO-8DC - leadless, double-cooling surface-mount package with exposed drain terminals on top and bottom; dimensions 6.15 mm × 5.15 mm × 0.56 mm (L × W × H); RoHS-compliant, halogen-free.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 7, 8	Drain (D)	Five parallel drain terminals - top-side exposed copper pad + four bottom-side pads - provide low-inductance, high-current path and dual thermal interface.
4	Gate (G)	Standard gate input; R_g = 0.88 Ω (max) ensures predictable turn-on/turn-off timing with external gate resistors.
5, 6	Source (S)	Two dedicated source terminals - separate from drain - minimize source inductance for accurate current sensing and stable control loop response.

Key Features

Feature	Design Value
TrenchFET® Gen IV silicon	Delivers industry-leading R_DS(on)–Q_g FOM (0.00088 Ω × 53 nC = 46.6 nΩ·nC), reducing total power loss in high-frequency switching.
Top-side cooling structure	Exposed top drain pad enables direct thermal interface to heatsink or cold plate - adds ~30–40% thermal capacity vs. bottom-only cooling.
100% R_g and UIS tested	Every unit screened for gate resistance consistency and unclamped inductive switching robustness - eliminates field failures in motor drive and OR-ing.
Low Q_oss (75 pC)	Minimizes turn-off loss in hard-switched topologies and improves light-load efficiency in resonant converters.
Body diode t_rr = 65 ns	Fast reverse recovery enables zero-voltage switching (ZVS) assist in synchronous rectifier applications without shoot-through risk.

Applications

Server VRM Secondary Side	Telecom 48 V OR-ing Circuit
Use Scenario: High-current, high-efficiency synchronous rectification in 48 V input, 0.8–1.8 V output multiphase buck converters for AI accelerators. IC Role / Device Role / Timing Role: Primary power switch in low-side synchronous rectifier position; commutates at 500 kHz–1 MHz with precise dead-time control. Use Value: 0.00088 Ω R_DS(on) cuts conduction loss by >35% vs. legacy 1.2 mΩ devices, enabling 95%+ full-load efficiency at 300 A per phase.	Use Scenario: Hot-swap and redundancy control in distributed 48 V power architectures across blade servers and baseband units. IC Role / Device Role / Timing Role: Unidirectional load switch with fast turn-on/turn-off (t_d(on) = 45 ns @ 4.5 V) to prevent backfeed and support seamless switchover. Use Value: 100 A rating and 125 mJ E_AS withstand inrush and fault currents during hot-plug events without derating or paralleling.
Industrial Motor Drive Half-Bridge	Battery Protection Load Switch
Use Scenario: Low-side switch in 24–48 V BLDC inverter half-bridges for robotics and automated guided vehicles. IC Role / Device Role / Timing Role: PWM-controlled power switch operating at 20–40 kHz; body diode conducts freewheeling current during off-state. Use Value: 0.73 V typical V_SD and 65 ns t_rr reduce freewheeling loss and EMI vs. discrete Schottky solutions, improving thermal margin at 10–15 A RMS.	Use Scenario: Main battery disconnect switch in 12–48 V Li-ion packs for UPS, portable medical, and energy storage systems. IC Role / Device Role / Timing Role: High-reliability load switch with integrated avalanche ruggedness; handles surge currents up to 400 A (I_DM) during short-circuit events. Use Value: 100% UIS tested and 125 mJ E_AS ensure fail-safe operation without external TVS, simplifying BMS protection design and reducing bill-of-materials.

Server VRM Secondary Side

Telecom 48 V OR-ing Circuit

Use Scenario: High-current, high-efficiency synchronous rectification in 48 V input, 0.8–1.8 V output multiphase buck converters for AI accelerators.

IC Role / Device Role / Timing Role: Primary power switch in low-side synchronous rectifier position; commutates at 500 kHz–1 MHz with precise dead-time control.

Use Value: 0.00088 Ω R_DS(on) cuts conduction loss by >35% vs. legacy 1.2 mΩ devices, enabling 95%+ full-load efficiency at 300 A per phase.

Use Scenario: Hot-swap and redundancy control in distributed 48 V power architectures across blade servers and baseband units.

IC Role / Device Role / Timing Role: Unidirectional load switch with fast turn-on/turn-off (t_d(on) = 45 ns @ 4.5 V) to prevent backfeed and support seamless switchover.

Use Value: 100 A rating and 125 mJ E_AS withstand inrush and fault currents during hot-plug events without derating or paralleling.

Industrial Motor Drive Half-Bridge

Battery Protection Load Switch

Use Scenario: Low-side switch in 24–48 V BLDC inverter half-bridges for robotics and automated guided vehicles.

IC Role / Device Role / Timing Role: PWM-controlled power switch operating at 20–40 kHz; body diode conducts freewheeling current during off-state.

Use Value: 0.73 V typical V_SD and 65 ns t_rr reduce freewheeling loss and EMI vs. discrete Schottky solutions, improving thermal margin at 10–15 A RMS.

Use Scenario: Main battery disconnect switch in 12–48 V Li-ion packs for UPS, portable medical, and energy storage systems.

IC Role / Device Role / Timing Role: High-reliability load switch with integrated avalanche ruggedness; handles surge currents up to 400 A (I_DM) during short-circuit events.

Use Value: 100% UIS tested and 125 mJ E_AS ensure fail-safe operation without external TVS, simplifying BMS protection design and reducing bill-of-materials.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 40 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SIDR404DP-T1-RE3	R_DS(on) = 0.00115 Ω @ 10 V (30% higher), Q_g = 42 nC @ 4.5 V (21% lower), same PowerPAK SO-8DC package.	Better suited for ultra-high-frequency (>2 MHz) designs where gate charge dominates loss; less optimal for high-current, low-R_DS(on) priority.	Select when switching frequency exceeds 1.5 MHz and conduction current remains below 60 A.
IRFH8325TRPBF	R_DS(on) = 0.0012 Ω @ 10 V, Q_g = 58 nC @ 4.5 V, PowerSO-8 package with bottom-side-only cooling (R_thJC = 1.2 °C/W).	Lacks top-side cooling; requires larger PCB copper area for thermal management; no guaranteed top-side thermal interface.	Choose only if existing layout uses PowerSO-8 footprint and thermal budget permits 50% higher junction temperature rise at same power.

Compared with SIDR402DP-T1-RE3, SIDR404DP-T1-RE3 trades conduction loss for faster switching, while IRFH8325TRPBF offers similar specs but lacks dual-cooling capability - making SIDR402DP-T1-RE3 the preferred choice for thermally constrained, high-current 40 V power stages demanding lowest R_DS(on) and maximum avalanche margin.

Availability

SIDR402DP-T1-RE3 is available at Aetrix Electronics and suitable for server VRMs, telecom OR-ing circuits, and industrial motor drives requiring stable component supply, long-term lifecycle assurance, and traceable sourcing for production ramp.

Supply support for SIDR402DP-T1-RE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors and passive components, specializing in high-performance MOSFETs, diodes, and power ICs for demanding industrial, computing, and automotive applications.

The SIDR402DP-T1-RE3 belongs to Vishay's TrenchFET® Gen IV PowerPAK® SO-8DC family, engineered specifically for high-power-density DC/DC conversion where ultra-low R_DS(on), low Q_g, and dual-sided thermal management are essential.

FAQ

What is the maximum continuous drain current rating for SIDR402DP-T1-RE3 at 70 °C case temperature?

The SIDR402DP-T1-RE3 supports 100 A continuous drain current at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This rating reflects package-limited conduction capability under steady-state thermal conditions with adequate heatsinking applied to the drain pad, and is identical to its rating at T_C = 25 °C due to the low R_thJC and robust construction of the PowerPAK® SO-8DC package.

Does SIDR402DP-T1-RE3 require special rework considerations compared to standard SO-8 packages?

Yes - SIDR402DP-T1-RE3 uses a leadless PowerPAK® SO-8DC package with exposed copper drain terminals. Manual soldering with a soldering iron is not recommended per Vishay documentation (note e). Rework must use controlled-profile reflow equipment to avoid thermal shock and ensure reliable interconnection to both top and bottom thermal pads, as the end of the lead terminal is unplated copper and does not guarantee solder fillet formation.

What is the typical body diode forward voltage of SIDR402DP-T1-RE3 at 10 A source current?

The typical body diode forward voltage (V_SD) of SIDR402DP-T1-RE3 is 0.73 V at I_S = 10 A and T_J = 25 °C, as specified in the Drain-Source Body Diode Characteristics table. This low V_SD minimizes conduction loss during freewheeling in synchronous rectifier and half-bridge configurations, contributing directly to system efficiency gains.

Is SIDR402DP-T1-RE3 suitable for use in automotive applications?

SIDR402DP-T1-RE3 is not AEC-Q101 qualified and is not recommended for automotive safety-critical or engine-bay applications. Vishay positions this device for industrial, computing, and telecom power systems. For automotive use, designers should select Vishay's AEC-Q101-qualified PowerPAK® SO-8DC variants such as the SQJQ402EP, which share similar R_DS(on) and package but include extended temperature screening and qualification testing.

How does the Cr_ss/C_iss ratio of SIDR402DP-T1-RE3 impact gate drive stability?

The Cr_ss/C_iss ratio of SIDR402DP-T1-RE3 is 0.024–0.048, indicating very low Miller capacitance relative to input capacitance. This low ratio enhances gate drive stability under high dv/dt conditions, reduces risk of false turn-on during switching transitions, and allows simpler gate driver design with smaller external gate resistors - especially beneficial in high-frequency synchronous rectifier topologies.

SIDR402DP-T1-RE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET® Gen IV

Package/Case:: PowerPAK® SO-8

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 64.6A (Ta), 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 0.88mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 2.3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 165 nC @ 10 V

Vgs (Max):: +20V, -16V

Input Capacitance (Ciss) (Max) @ Vds:: 9100 pF @ 20 V

FET Feature:: -

Power Dissipation (Max):: 6.25W (Ta), 125W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® SO-8DC

SIDR402DP-T1-RE3 FAQ

1.How can I place an order for SIDR402DP-T1-RE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIDR402DP-T1-RE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIDR402DP-T1-RE3 reliable?

The price and inventory of SIDR402DP-T1-RE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIDR402DP-T1-RE3 is usually 5 days.

3.What payment methods are accepted for SIDR402DP-T1-RE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIDR402DP-T1-RE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIDR402DP-T1-RE3?

SIDR402DP-T1-RE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIDR402DP-T1-RE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIDR402DP-T1-RE3?

For technical support, including SIDR402DP-T1-RE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIDR402DP-T1-RE3 requirements.

6.How does Aetrix verify that SIDR402DP-T1-RE3 is sourced from the original manufacturer or authorized distributors?

All SIDR402DP-T1-RE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIDR402DP-T1-RE3 meets industry standards.

7.What is the process for return or replacement of SIDR402DP-T1-RE3?

All SIDR402DP-T1-RE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIDR402DP-T1-RE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIDR402DP-T1-RE3 part is unused and in its original packaging.

Return procedure for SIDR402DP-T1-RE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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