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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIDR608DP-T1-RE3

Name: SIDR608DP-T1-RE3
Brand: Vishay Siliconix
SKU: SIDR608DP-T1-RE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIDR608DP-T1-RE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® SO-8

Datasheet:: SIDR608DP-T1-RE3.pdf

Description:: MOSFET N-CH 45V 51A/208A PPAK

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Product details

Overview

SIDR608DP-T1-RE3 from Vishay Siliconix is an N-channel 45 V TrenchFET® Gen IV power MOSFET in PowerPAK® SO-8DC package, delivering R_DS(on) = 1.20 mΩ at V_GS = 10 V and 1.80 mΩ at V_GS = 4.5 V, with 208 A continuous drain current (T_C = 25 °C), optimized for high-efficiency synchronous rectification and high-power-density DC/DC converters.

For engineers reviewing the SIDR608DP-T1-RE3 datasheet, SIDR608DP-T1-RE3 pinout, SIDR608DP-T1-RE3 application, or SIDR608DP-T1-RE3 equivalent, key selection criteria include low Q_g (50.5 nC typ. at 4.5 V), ultra-low R_DS(on), robust UIS testing, and double-sided cooling capability enabled by the leadless PowerPAK SO-8DC thermal design.

Technical Context

This MOSFET employs TrenchFET® Gen IV silicon technology to achieve balanced conduction and switching losses, with a Cr_ss/C_iss ratio of 0.0135–0.0270 enabling stable high-frequency operation under hard-switching conditions. Its gate threshold voltage (V_GS(th) = 1.1–2.3 V) supports direct drive from 4.5 V logic controllers without level shifting.

The PowerPAK SO-8DC package features exposed copper drain pads on both top and bottom surfaces, enabling dual-side heat dissipation with R_thJC = 0.9 °C/W (drain) and R_thJC = 1.1 °C/W (source), while its 6.15 mm × 5.15 mm footprint maintains compatibility with standard SO-8 layouts despite being leadless.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	45 V - Maximum blocking voltage suitable for 12 V and 24 V input DC/DC stages and motor drive half-bridges.
R_DS(on) max @ 10 V	1.20 mΩ - Enables <1 W conduction loss at 200 A, critical for >98 % efficiency in high-current synchronous rectifiers.
R_DS(on) max @ 4.5 V	1.80 mΩ - Ensures full enhancement with standard 5 V microcontrollers and PWM controllers without gate drivers.
Q_g typ. @ 4.5 V	50.5 nC - Reduces gate drive power and switching loss in 300–1000 kHz DC/DC converters.
I_D cont. @ T_C = 25 °C	208 A - Supports high-current output rails in server VRMs and telecom power supplies with minimal paralleling.
Q_oss	59 nC - Low output charge minimizes turn-off energy and improves light-load efficiency in resonant topologies.
V_SD @ I_S = 10 A	0.7–1.1 V - Low body diode forward voltage reduces reverse recovery loss during dead-time conduction.

Pinout & Package

Package: PowerPAK® SO-8DC - leadless, double-cooled surface-mount package with top- and bottom-side exposed drain copper pads (6.15 mm × 5.15 mm footprint); compatible with standard SO-8 PCB land patterns but requires controlled reflow per Vishay doc. 73257.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 8	Source (S)	Common source connection; electrically tied to bottom-side exposed copper pad for low-inductance return path and thermal sinking.
4	Gate (G)	Control terminal; low gate resistance (0.3–1.5 Ω) enables fast, low-loss switching with minimal ringing.
5, 6, 7, D-Pad	Drain (D)	Main power terminal; top- and bottom-side exposed copper provides dual thermal paths to PCB and heatsink, reducing R_thJA to 15–20 °C/W.

Key Features

Feature	Design Value
TrenchFET® Gen IV silicon	Delivers 20 % lower R_DS(on) and 30 % lower Q_g vs. prior generation, enabling higher power density in same footprint.
100 % R_g and UIS tested	Ensures gate robustness against transient overvoltage and ruggedness against unclamped inductive switching stress in motor drives.
Double-cooled PowerPAK SO-8DC	Enables >2× power handling vs. standard SO-8 by routing heat through both top and bottom copper layers into PCB planes.
Low Q_oss / C_oss	Reduces turn-off loss and improves ZVS behavior in LLC and phase-shifted full-bridge converters operating above 300 kHz.
Body diode t_rr = 52–104 ns	Minimizes reverse recovery charge (Q_rr = 71–142 nC), lowering EMI and shoot-through risk in synchronous rectifier applications.

Applications

Server VRM Output Stage	Telecom 48 V Input DC/DC Converter
Use Scenario: High-current, high-efficiency buck converter delivering 50–200 A at 0.8–1.8 V to CPU/GPU cores in data center servers. IC Role / Device Role: Synchronous rectifier MOSFET in multiphase buck topology, replacing Schottky diodes to reduce conduction loss. Use Value: 1.20 mΩ R_DS(on) cuts conduction loss by >60 % vs. typical 3.5 mΩ alternatives, directly improving VRM efficiency from 92 % to >95 % at full load.	Use Scenario: Primary-side synchronous rectifier in isolated 48 V-to-12 V DC/DC module for telecom base station power distribution. IC Role / Device Role: Secondary-side switch in forward or active-clamp flyback topology, conducting up to 150 A peak current. Use Value: Dual-side cooling allows sustained 150 A operation with <15 °C junction rise on 2 oz. copper PCB, eliminating need for external heatsinks.
Industrial Motor Drive Half-Bridge	High-Power USB PD 3.1 EPR GaN Companion
Use Scenario: Low-side switch in 24–48 V BLDC motor inverter driving pumps, fans, or robotics actuators. IC Role / Device Role: High-current, low-R_DS(on) N-channel switch paired with high-side driver; handles pulsed currents up to 400 A. Use Value: 400 A pulsed rating and 50 A avalanche energy (E_AS = 125 mJ) withstand motor back-EMF transients without snubbers or derating.	Use Scenario: Synchronous rectifier in 28 V/48 V output stage of USB PD 3.1 Extended Power Range (EPR) adapter using GaN primary. IC Role / Device Role: Secondary-side power switch optimized for 200–500 kHz operation with low Q_g and fast body diode. Use Value: 50.5 nC Q_g at 4.5 V enables direct drive from PD controller GPIOs, eliminating gate driver IC and saving board space.

Server VRM Output Stage

Telecom 48 V Input DC/DC Converter

Use Scenario: High-current, high-efficiency buck converter delivering 50–200 A at 0.8–1.8 V to CPU/GPU cores in data center servers.

IC Role / Device Role: Synchronous rectifier MOSFET in multiphase buck topology, replacing Schottky diodes to reduce conduction loss.

Use Value: 1.20 mΩ R_DS(on) cuts conduction loss by >60 % vs. typical 3.5 mΩ alternatives, directly improving VRM efficiency from 92 % to >95 % at full load.

Use Scenario: Primary-side synchronous rectifier in isolated 48 V-to-12 V DC/DC module for telecom base station power distribution.

IC Role / Device Role: Secondary-side switch in forward or active-clamp flyback topology, conducting up to 150 A peak current.

Use Value: Dual-side cooling allows sustained 150 A operation with <15 °C junction rise on 2 oz. copper PCB, eliminating need for external heatsinks.

Industrial Motor Drive Half-Bridge

High-Power USB PD 3.1 EPR GaN Companion

Use Scenario: Low-side switch in 24–48 V BLDC motor inverter driving pumps, fans, or robotics actuators.

IC Role / Device Role: High-current, low-R_DS(on) N-channel switch paired with high-side driver; handles pulsed currents up to 400 A.

Use Value: 400 A pulsed rating and 50 A avalanche energy (E_AS = 125 mJ) withstand motor back-EMF transients without snubbers or derating.

Use Scenario: Synchronous rectifier in 28 V/48 V output stage of USB PD 3.1 Extended Power Range (EPR) adapter using GaN primary.

IC Role / Device Role: Secondary-side power switch optimized for 200–500 kHz operation with low Q_g and fast body diode.

Use Value: 50.5 nC Q_g at 4.5 V enables direct drive from PD controller GPIOs, eliminating gate driver IC and saving board space.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 45 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Infineon IPP016N04L	R_DS(on) = 1.6 mΩ @ 10 V; Q_g = 47 nC; TO-220 package; no double-side cooling.	Requires heatsink mounting; unsuitable for ultra-thin or double-sided PCB thermal designs.	Select when mechanical mounting constraints favor through-hole and thermal mass outweighs footprint density.
ON Semiconductor NTMFS5C406N	R_DS(on) = 1.35 mΩ @ 10 V; Q_g = 58 nC; Power56 package; single-side cooling only.	Higher Q_g increases gate drive loss at >500 kHz; limited to bottom-side thermal path.	Prefer when existing layout uses Power56 footprint and switching frequency stays below 300 kHz.

Compared with IPP016N04L and NTMFS5C406N, SIDR608DP-T1-RE3 delivers the lowest R_DS(on) in a thermally superior double-cooled package, making it optimal for space-constrained, high-frequency, high-current applications where thermal headroom and efficiency are critical.

Availability

SIDR608DP-T1-RE3 is available at Aetrix Electronics and suitable for server VRMs, telecom DC/DC converters, industrial motor drives, and USB PD 3.1 EPR adapters requiring stable component supply and long-term production continuity.

Supply support for SIDR608DP-T1-RE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.

The SIDR608DP-T1-RE3 belongs to Vishay's TrenchFET® Gen IV PowerPAK SO-8DC family, engineered specifically for high-current, high-frequency power conversion in data center, telecom, and industrial systems where thermal performance and conduction loss dominate system efficiency.

FAQ

What is the maximum continuous drain current rating for SIDR608DP-T1-RE3 at 70 °C case temperature?

The SIDR608DP-T1-RE3 supports 166 A continuous drain current at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the PowerPAK SO-8DC package under steady-state conduction, and is validated by Vishay's 100 % UIS and R_g testing protocol. Designers must ensure adequate PCB copper area and airflow to maintain case temperature within this limit during full-load operation.

Does SIDR608DP-T1-RE3 require a gate driver IC when used with a 3.3 V microcontroller?

No - SIDR608DP-T1-RE3 has a gate threshold voltage (V_GS(th)) of 1.1–2.3 V and achieves R_DS(on) = 1.80 mΩ at V_GS = 4.5 V, allowing full enhancement from 3.3 V logic with sufficient gate charge (Q_g = 50.5 nC typ. at 4.5 V). However, for switching frequencies above 300 kHz or high di/dt requirements, a dedicated gate driver is recommended to minimize transition time and reduce switching loss in the SIDR608DP-T1-RE3.

What is the thermal resistance from junction to ambient (R_thJA) for SIDR608DP-T1-RE3 on a standard FR4 board?

The SIDR608DP-T1-RE3 exhibits R_thJA = 15–20 °C/W under standard test conditions (1" × 1" FR4 board, t ≤ 10 s), per Vishay document S19-0390-Rev. A. This value assumes bottom-side solder attachment to 2 oz. copper; actual R_thJA improves significantly with internal copper planes and thermal vias. The device's double-cooled structure enables lower effective R_thJA than conventional SO-8 devices, which typically exceed 60 °C/W.

Is SIDR608DP-T1-RE3 suitable for avalanche energy handling in motor drive applications?

Yes - SIDR608DP-T1-RE3 is 100 % UIS (unclamped inductive switching) tested and rated for single-pulse avalanche energy E_AS = 125 mJ and avalanche current I_AS = 50 A (L = 0.1 mH). This makes it suitable for motor drive half-bridges where inductive kickback occurs during PWM transitions, provided layout minimizes stray inductance and the device operates within its safe operating area (SOA) curves shown in the datasheet.

What is the body diode forward voltage (V_SD) of SIDR608DP-T1-RE3 at 10 A and 25 °C?

The body diode forward voltage V_SD of SIDR608DP-T1-RE3 is specified as 0.7–1.1 V at I_S = 10 A and T_J = 25 °C. This low V_SD reduces conduction loss during dead-time conduction in synchronous rectifier and half-bridge configurations, and contributes to lower reverse recovery charge (Q_rr = 71–142 nC), minimizing associated switching loss and EMI in the SIDR608DP-T1-RE3.

SIDR608DP-T1-RE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET® Gen IV

Package/Case:: PowerPAK® SO-8

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 45 V

Current - Continuous Drain (Id) @ 25°C:: 51A (Ta), 208A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 1.2mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 2.3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 167 nC @ 10 V

Vgs (Max):: +20V, -16V

Input Capacitance (Ciss) (Max) @ Vds:: 8900 pF @ 20 V

FET Feature:: -

Power Dissipation (Max):: 6.25W (Ta), 104W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® SO-8DC

SIDR608DP-T1-RE3 FAQ

1.How can I place an order for SIDR608DP-T1-RE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIDR608DP-T1-RE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIDR608DP-T1-RE3 reliable?

The price and inventory of SIDR608DP-T1-RE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIDR608DP-T1-RE3 is usually 5 days.

3.What payment methods are accepted for SIDR608DP-T1-RE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIDR608DP-T1-RE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIDR608DP-T1-RE3?

SIDR608DP-T1-RE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIDR608DP-T1-RE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIDR608DP-T1-RE3?

For technical support, including SIDR608DP-T1-RE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIDR608DP-T1-RE3 requirements.

6.How does Aetrix verify that SIDR608DP-T1-RE3 is sourced from the original manufacturer or authorized distributors?

All SIDR608DP-T1-RE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIDR608DP-T1-RE3 meets industry standards.

7.What is the process for return or replacement of SIDR608DP-T1-RE3?

All SIDR608DP-T1-RE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIDR608DP-T1-RE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIDR608DP-T1-RE3 part is unused and in its original packaging.

Return procedure for SIDR608DP-T1-RE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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