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Vishay Siliconix SIE822DF-T1-E3
- Part No.:
- SIE822DF-T1-E3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- 10-PolarPAK® (S)
- Datasheet:
-
SIE822DF-T1-E3.pdf
- Description:
- MOSFET N-CH 20V 50A 10POLARPAK
- Quantity:
- Payment:
- Shipping:
Inventory:5,563
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Product details
Overview
SIE822DF-T1-E3 from Vishay Siliconix is an N-channel 20 V (D-S) TrenchFET® power MOSFET in PolarPAK® package, delivering RDS(on) = 3.4 mΩ at VGS = 10 V and 5.5 mΩ at VGS = 4.5 V, with 24 nC total gate charge and 50 A package-limited continuous drain current. It serves as a high-efficiency synchronous rectifier or primary-side switch in VRM and DC/DC converters.
For engineers reviewing the SIE822DF-T1-E3 datasheet, SIE822DF-T1-E3 pinout, SIE822DF-T1-E3 application, or SIE822DF-T1-E3 equivalent, key selection factors include its ultra-low thermal resistance (RthJC = 1.2 °C/W to drain top), double-sided cooling capability, low Qgd/Qgs ratio for shoot-through prevention, 100% Rg and UIS testing, and lead (Pb)-free, halogen-free compliance.
Technical Context
This MOSFET employs trench-gate silicon technology optimized for low conduction and switching losses in high-frequency DC/DC conversion. Its PolarPAK® package features a top-exposed drain for direct thermal interface and bottom-side source/gate terminals enabling dual-side PCB heat extraction.
The device supports gate drive voltages from 4.5 V to 10 V, exhibits stable threshold voltage (VGS(th) = 1.5–3.0 V), and integrates a robust body diode with trr = 40–60 ns and Qrr = 36–60 nC - critical for synchronous rectification efficiency and EMI control.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 20 V - Maximum drain-source blocking voltage; defines use in ≤20 V input/output rail systems |
| RDS(on) @ 10 V | 3.4 mΩ max - Enables <1 W conduction loss at 50 A, supporting high-current VRM phases |
| RDS(on) @ 4.5 V | 5.5 mΩ max - Ensures strong enhancement-mode turn-on under 5 V logic or controller gate drive |
| Qg | 24 nC typ @ 4.5 V - Low gate charge reduces driver power and enables >1 MHz switching in compact converters |
| ID (package) | 50 A continuous - Package-limited rating verified on 1" × 1" FR4; sets board-level thermal design baseline |
| RthJC (drain) | 1.2 °C/W max - Enables direct heatsink mounting to top surface for high-power density thermal management |
| Qgd/Qgs | Low ratio - Minimizes Miller-induced shoot-through risk during hard-switching transitions |
Pinout & Package
PolarPAK® is a 10-pin, leadless, top-exposed copper-plate package (6.15 mm × 5.16 mm × 0.80 mm). Top surface connects to pins 1, 5, 6, and 10 (all drain); bottom side exposes source (pins 2, 3, 7, 8) and gate (pins 4, 9).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 5, 6, 10 (top) | Drain (D) | Electrically and thermally common top copper plate; primary heat path to heatsink or thermal pad |
| 2, 3, 7, 8 (bottom) | Source (S) | Bottom-side copper pads for PCB solder attachment and low-inductance source return routing |
| 4, 9 (bottom) | Gate (G) | Isolated gate terminals; require controlled impedance drive and local decoupling near package |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® silicon process | Delivers industry-leading RDS(on) × Qg figure-of-merit for high-frequency efficiency |
| Top-exposed PolarPAK® drain | Enables double-sided cooling: top to heatsink + bottom to PCB copper, reducing θJA to 24 °C/W |
| Low Qgd/Qgs ratio | Improves hard-switching robustness and reduces need for negative gate turn-off in synchronous buck stages |
| 100% Rg and UIS tested | Guarantees gate resistance consistency and avalanche ruggedness for reliable operation under transient overloads |
| Lead (Pb)-free & halogen-free | Complies with RoHS Directive 2011/65/EU and JEDEC JS709E; suitable for automotive and industrial green programs |
Applications
| Server VRM Phase Legs | Point-of-Load DC/DC Converters |
|---|---|
Use Scenario: High-current, multi-phase buck converter supplying CPU/GPU core voltage (0.8–1.2 V) at up to 300 A per rail. IC Role / Device Role / Timing Role: Primary high-side or synchronous rectifier MOSFET in each phase leg, switching at 300–1000 kHz. Use Value: Ultra-low RDS(on) and Qg minimize conduction and switching losses, directly improving system efficiency and reducing thermal load on VRM heatsinks. | Use Scenario: Compact 12 V input to 3.3 V/5 V output converter on telecom line cards or industrial PLC modules. IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in isolated flyback or non-isolated buck topology. Use Value: Low VSD (0.8–1.2 V) and fast trr (40–60 ns) reduce forward and reverse recovery losses, increasing light-load efficiency by >2% vs. Schottky alternatives. |
| Industrial Motor Drive Gate Drivers | Automotive ADAS Power Supplies |
Use Scenario: Half-bridge high-side switch in 24 V BLDC motor gate driver IC reference designs. IC Role / Device Role / Timing Role: High-side N-channel MOSFET driven by bootstrap circuitry; requires robust dV/dt immunity and low Qgd. Use Value: Low Qgd/Qgs ratio suppresses Miller-induced false turn-on, eliminating need for external gate clamping in space-constrained motor control PCBs. | Use Scenario: 12 V input to 5 V/3.3 V power supply for radar sensor ECUs or camera modules in ADAS systems. IC Role / Device Role / Timing Role: Input-stage switch or secondary-side rectifier in compact, thermally constrained power module. Use Value: RthJC = 1.2 °C/W allows direct top-side heatsinking within sealed enclosures, meeting AEC-Q101 thermal reliability requirements without oversized copper pours. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SiR822DP-T1-GE3 | Same PolarPAK® package, but 30 V VDS, higher RDS(on) (4.2 mΩ @ 10 V), larger Qg (32 nC) | Better suited for 24 V industrial input rails where 20 V margin is insufficient | Select when system input exceeds 20 V or higher avalanche energy (EAS = 65 mJ) is required |
| IRF6642TRPBF | Direct competitor in DirectFET® M package; 20 V, RDS(on) = 3.6 mΩ @ 10 V, Qg = 26 nC, RthJC = 1.5 °C/W | Compatible footprint but different thermal interface geometry; requires revalidation of top-side heatsink contact | Choose if existing layout uses DirectFET® M or if lower-cost sourcing is prioritized over minimal RthJC advantage |
Compared with SiR822DP-T1-GE3, SIE822DF-T1-E3 offers tighter VDS margin and lower switching loss for 12–20 V systems; versus IRF6642TRPBF, it delivers superior thermal resistance and slightly better Qg/RDS(on) trade-off - critical for thermally dense VRM and PoL designs.
Availability
SIE822DF-T1-E3 is available at Aetrix Electronics and suitable for server VRM, point-of-load DC/DC converters, and industrial motor drive applications requiring stable component supply, long-term lifecycle support, and traceable Pb-free sourcing.
Supply support for SIE822DF-T1-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.
The SIE822DF-T1-E3 belongs to Vishay's PolarPAK® TrenchFET® family, engineered specifically for high-current, high-frequency DC/DC conversion where thermal performance and switching loss minimization are critical.
FAQ
What is the maximum continuous drain current rating for SIE822DF-T1-E3 under standard PCB conditions?
The SIE822DF-T1-E3 has a package-limited continuous drain current of 50 A when mounted on a 1" × 1" FR4 board at TC = 25 °C. This rating reflects thermal limits of the PolarPAK® package, not silicon capability - the silicon limit is 138 A, but practical operation is constrained by PCB heat spreading and case temperature rise. Always verify layout thermal performance using the provided RthJA = 24 °C/W max value.
Does SIE822DF-T1-E3 support 5 V gate drive in synchronous rectifier applications?
Yes, SIE822DF-T1-E3 is fully specified for 4.5 V gate drive: RDS(on) is guaranteed at ≤5.5 mΩ under VGS = 4.5 V, ID = 14.5 A conditions. Its VGS(th) range (1.5–3.0 V) ensures strong enhancement-mode turn-on with standard 5 V controllers or integrated gate drivers, making it suitable for 5 V-driven synchronous rectifiers in buck and flyback topologies.
How does the PolarPAK® package of SIE822DF-T1-E3 improve thermal performance compared to SO-8 or PowerPAK®?
The PolarPAK® package of SIE822DF-T1-E3 provides a dedicated top-exposed drain copper plate (RthJC = 1.2 °C/W max to drain top), enabling direct heatsink attachment - a capability absent in SO-8 and most PowerPAK® variants. This dual-sided cooling path (top heatsink + bottom PCB copper) achieves up to 40% lower junction-to-ambient resistance than comparable SO-8 devices, significantly raising power density limits in space-constrained converters.
Is SIE822DF-T1-E3 suitable for avalanche-rated applications like inductive load switching?
Yes, SIE822DF-T1-E3 is 100% tested for Unclamped Inductive Switching (UIS) and rated for single-pulse avalanche energy EAS = 45 mJ at IAS = 30 A and L = 0.1 mH. This makes it appropriate for automotive and industrial applications involving relay driving, solenoid control, or flyback snubberless designs where controlled avalanche operation is part of the intended stress profile.
What is the body diode reverse recovery performance of SIE822DF-T1-E3, and why does it matter in synchronous rectification?
The SIE822DF-T1-E3 body diode has trr = 40–60 ns and Qrr = 36–60 nC at IF = 10 A, di/dt = 100 A/μs, TJ = 25 °C. In synchronous rectification, low Qrr minimizes reverse recovery current spikes that cause switching loss and EMI; fast trr allows earlier gate turn-on timing, reducing dead-time conduction loss - both directly improving efficiency and thermal behavior in high-frequency converters.
SIE822DF-T1-E3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- 10-PolarPAK® (S)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 3.4mOhm @ 18.3A, 10V
- Vgs(th) (Max) @ Id:
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 78 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 4200 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 5.2W (Ta), 104W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 10-PolarPAK® (S)
SIE822DF-T1-E3 FAQ
1.How can I place an order for SIE822DF-T1-E3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIE822DF-T1-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIE822DF-T1-E3 reliable?
The price and inventory of SIE822DF-T1-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIE822DF-T1-E3 is usually 5 days.
3.What payment methods are accepted for SIE822DF-T1-E3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIE822DF-T1-E3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIE822DF-T1-E3?
SIE822DF-T1-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIE822DF-T1-E3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIE822DF-T1-E3?
For technical support, including SIE822DF-T1-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIE822DF-T1-E3 requirements.
6.How does Aetrix verify that SIE822DF-T1-E3 is sourced from the original manufacturer or authorized distributors?
All SIE822DF-T1-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIE822DF-T1-E3 meets industry standards.
7.What is the process for return or replacement of SIE822DF-T1-E3?
All SIE822DF-T1-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SIE822DF-T1-E3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIE822DF-T1-E3 part is unused and in its original packaging.
Return procedure for SIE822DF-T1-E3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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