Vishay Siliconix SIHB12N50C-E3

Overview

SIHB12N50C-E3 from Vishay Siliconix is a 500 V, 12 A N-channel power MOSFET in TO-220 FULLPAK package, featuring R_DS(on) = 0.555 Ω at V_GS = 10 V, Q_g = 48 nC, and 100 % avalanche tested for robustness in hard-switching power supplies and motor control circuits.

For engineers reviewing the SIHB12N50C-E3 datasheet, SIHB12N50C-E3 pinout, SIHB12N50C-E3 application, or SIHB12N50C-E3 equivalent, key selection factors include its 500 V blocking voltage, low gate charge for high-frequency switching, thermal resistance of 0.6 °C/W (junction-to-case), RoHS-compliant lead-free termination, and validated unclamped inductive switching performance up to 180 mJ.

Technical Context

This MOSFET employs planar high-voltage silicon technology optimized for fast switching with reduced Q_gd/Q_g ratio (15/48 nC), enabling efficient operation in 50–500 kHz SMPS topologies. Its body diode exhibits t_rr = 580 ns and Q_rr = 4.3 μC at 25 °C, supporting moderate-speed freewheeling in flyback and LLC converters.

The device is rated for continuous drain current of 12 A at T_C = 25 °C and derates linearly to 7.5 A at T_C = 100 °C, with maximum power dissipation of 36 W in TO-220 FULLPAK. Junction-to-case thermal resistance is 0.6 °C/W - significantly lower than TO-220AB (0.6 °C/W) and D2PAK (3.5 °C/W) variants - confirming superior heat transfer via the exposed drain pad.

Key Specifications

Pinout & Package

SIHB12N50C-E3 is housed in TO-220 FULLPAK package - a modified TO-220 variant with exposed drain pad on the bottom surface for enhanced thermal performance and improved mechanical stability. The package uses 3-lead configuration with G-D-S terminal layout on the front side.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with STP12NK50ZFP and IRFBC40APBF, SIHB12N50C-E3 offers superior thermal performance (0.6 °C/W), higher current capability (12 A), and verified 180 mJ avalanche energy - making it the preferred choice for high-power-density, high-reliability 500 V switching applications where thermal management and transient robustness are critical.

Availability

SIHB12N50C-E3 is available at Aetrix Electronics and suitable for server power supplies, industrial motor drives, LED streetlight drivers, and EV onboard chargers requiring stable component supply and long-term production continuity.

Supply support for SIHB12N50C-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.

The SiHx12N50C family was designed for high-voltage, medium-current switching in industrial and computing power conversion - prioritizing low R_DS(on) × Q_g, robust avalanche capability, and thermally optimized packaging.

FAQ

What is the maximum continuous drain current rating for SIHB12N50C-E3 at 100 °C case temperature?

The SIHB12N50C-E3 is rated for 7.5 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the TO-220 FULLPAK package and must be respected to maintain junction temperature ≤ 150 °C. Designers should verify actual case temperature under operating conditions using the 0.6 °C/W R_thJC value and measured power dissipation. The SIHB12N50C-E3 datasheet confirms this value applies specifically to the TO-220 FULLPAK variant.

Does SIHB12N50C-E3 have a fully rated avalanche energy specification?

Yes, the SIHB12N50C-E3 is 100 % avalanche tested with a specified single-pulse avalanche energy (E_AS) of 180 mJ under defined test conditions (V_DD = 50 V, L = 2.5 mH, R_g = 25 Ω, I_AS = 12 A). This rating is explicitly confirmed in the Product Summary and Absolute Maximum Ratings sections of the Vishay document 91388. The SIHB12N50C-E3 is therefore suitable for applications subject to inductive switching stress without requiring external protection circuitry.

What is the gate threshold voltage range for SIHB12N50C-E3?

The gate-source threshold voltage (V_GS(th)) for SIHB12N50C-E3 is specified as 3.0 V minimum to 5.0 V maximum at V_DS = V_GS and I_D = 250 μA. This range ensures reliable turn-on with standard 10 V gate drive while preventing false triggering from noise. The SIHB12N50C-E3 does not qualify as a logic-level MOSFET (which typically has V_GS(th) ≤ 2.5 V), and thus requires a dedicated gate driver or controller capable of delivering ≥10 V.

How does the TO-220 FULLPAK package of SIHB12N50C-E3 improve thermal performance over standard TO-220AB?

The TO-220 FULLPAK package used by SIHB12N50C-E3 features an exposed drain pad on the bottom surface that provides direct thermal conduction to the heatsink, achieving a junction-to-case thermal resistance (R_thJC) of 0.6 °C/W - compared to 1.0 °C/W for TO-220AB and 3.5 °C/W for D2PAK. This 40 % improvement enables higher power dissipation (36 W vs. 208 W for TO-220AB, but at much lower thermal impedance) in space-constrained designs. The SIHB12N50C-E3 benefits directly from this architecture for improved reliability in thermally demanding applications.

Is SIHB12N50C-E3 compatible with lead-free reflow soldering processes?

Yes, the SIHB12N50C-E3 carries the "-E3" suffix, indicating lead-free terminations compliant with RoHS Directive 2002/95/EC. Vishay specifies a peak soldering temperature of 300 °C for 10 seconds, fully compatible with standard lead-free reflow profiles (e.g., JEDEC J-STD-020). The SIHB12N50C-E3 package construction and plating system are qualified for repeated thermal cycling without degradation, ensuring long-term solder joint integrity in industrial and computing applications.