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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHB22N60ET5-GE3

Name: SIHB22N60ET5-GE3
Brand: Vishay Siliconix
SKU: SIHB22N60ET5-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHB22N60ET5-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: SIHB22N60ET5-GE3.pdf

Description:: MOSFET N-CH 600V 21A TO263

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Product details

Overview

SIHB22N60ET5-GE3 from Vishay Siliconix is a 600 V, 21 A N-channel enhancement-mode Power MOSFET in D2PAK (TO-263) package, featuring 0.18 Ω max R_DS(on) at V_GS = 10 V, 86 nC total gate charge, and 367 mJ single-pulse avalanche energy - designed for high-efficiency switching in server power supplies and PFC stages.

For engineers reviewing the SIHB22N60ET5-GE3 datasheet, SIHB22N60ET5-GE3 pinout, SIHB22N60ET5-GE3 application, or SIHB22N60ET5-GE3 equivalent, key selection criteria include its low FOM (R_DS(on) × Q_g), robust UIS rating, and thermal performance with R_thJC = 0.55 °C/W - critical for high-power density SMPS designs.

Technical Context

This device employs planar high-voltage silicon technology optimized for fast switching and low conduction loss in hard-switched topologies. Its 600 V V_DS rating supports universal input AC/DC front-end designs, while the 0.15 Ω typical R_DS(on) at 25 °C enables efficient operation at 11 A continuous drain current under TJ = 150 °C conditions.

The MOSFET integrates an intrinsic body diode with 344 ns reverse recovery time and 5.3 μC Q_rr, supporting synchronous rectification and ZVS-assisted transitions. Gate drive requirements are defined by 11 nC Q_gs, 24 nC Q_gd, and 0.77 Ω typical gate input resistance - enabling compatibility with standard 10 V gate drivers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS Max	600 V - supports 400 V DC bus with 50 % margin for transient overvoltage in telecom/server PSUs
R_DS(on) Max @ 10 V	0.18 Ω - limits conduction loss to ≤ 22 W at 11 A, enabling compact heatsink design
Q_g Max	86 nC - determines gate driver power requirement and switching speed in 100–500 kHz PFC stages
E_AS	367 mJ - ensures ruggedness against inductive switching faults without external snubbers
R_thJC	0.55 °C/W - allows 227 W power dissipation with ≤ 125 °C case-to-junction rise, critical for forced-air-cooled modules
I_D Continuous @ T_C = 100 °C	13 A - defines usable current derating in high-ambient industrial environments
C_iss	1920 pF - impacts gate drive loop stability and EMI filter sizing in high-frequency SMPS

Pinout & Package

D2PAK (TO-263) surface-mount package with isolated thermal pad on drain side; 3-pin configuration (G, D, S); 15.88 mm maximum height; JEDEC-compliant outline per document 73397.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	Receives 10 V logic-level signal; requires < 0.77 Ω series resistance to damp ringing during 18–36 ns turn-on delay
D (Drain)	High-side power terminal	Connected to DC bus or transformer primary; electrically tied to thermal pad - must be routed to system ground plane for thermal and EMI control
S (Source)	Power return / reference node	Serves as local ground for gate driver; low-inductance layout essential to minimize V_GS noise during 100 A/μs dI/dt diode commutation

Key Features

Feature	Design Value
Low R_DS(on) × Q_g FOM	15.5 Ω·nC - reduces combined switching + conduction losses more effectively than competitive 600 V MOSFETs in 200–300 kHz PFC
Avalanche-rated (UIS)	367 mJ single-pulse - eliminates need for external clamping in inductive load switching, improving BOM simplicity
Ultra-low Q_gd/Q_g ratio	24/86 ≈ 28 % - enhances voltage-controlled switching behavior and reduces Miller-induced shoot-through risk
Body diode Q_rr	5.3 μC - enables reliable operation in LLC resonant converters where body diode conduction occurs during dead-time
Pb-free & Halogen-free	Meets RoHS 2011/65/EU and Vishay's material compliance standard #99912 - suitable for export-controlled industrial systems

Applications

Server Power Supply	Telecom Rectifier
Use Scenario: Primary-side switching in 3 kW 80 PLUS Titanium AC/DC front-end with active PFC + LLC topology. IC Role / Device Role / Timing Role: High-side switch in boost PFC stage operating at 120 kHz, handling 21 A peak inductor current. Use Value: 0.15 Ω typical R_DS(on) reduces conduction loss by 1.8 W vs. legacy 0.22 Ω devices, improving full-load efficiency by 0.3 %.	Use Scenario: Output rectification in 48 V/50 A telecom rectifier with synchronous rectification control. IC Role / Device Role / Timing Role: Low-side synchronous rectifier in phase-shifted full-bridge, conducting 56 A pulsed current during ZVS transitions. Use Value: 344 ns t_rr and 28 A I_RRM limit reverse recovery overshoot to < 15 V, preventing secondary-side MOSFET failure.
Solar PV Inverter	Industrial Motor Drive
Use Scenario: DC link switching in string-level 5 kW photovoltaic inverter with two-level NPC topology. IC Role / Device Role / Timing Role: Upper-leg switch in H-bridge leg, blocking 600 V DC bus while sustaining 13 A continuous current at 70 °C ambient. Use Value: 0.55 °C/W R_thJC enables direct mounting to cold plate, reducing junction temperature by 18 °C vs. TO-220 alternatives.	Use Scenario: IGBT gate driving auxiliary supply in 15 kW servo drive with isolated DC/DC converter. IC Role / Device Role / Timing Role: Primary switch in 300 kHz flyback controller powering isolated gate driver rails. Use Value: 1920 pF C_iss allows stable operation with 4.7 Ω gate resistor, minimizing EMI without added RC snubbers.

Server Power Supply

Telecom Rectifier

Use Scenario: Primary-side switching in 3 kW 80 PLUS Titanium AC/DC front-end with active PFC + LLC topology.

IC Role / Device Role / Timing Role: High-side switch in boost PFC stage operating at 120 kHz, handling 21 A peak inductor current.

Use Value: 0.15 Ω typical R_DS(on) reduces conduction loss by 1.8 W vs. legacy 0.22 Ω devices, improving full-load efficiency by 0.3 %.

Use Scenario: Output rectification in 48 V/50 A telecom rectifier with synchronous rectification control.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier in phase-shifted full-bridge, conducting 56 A pulsed current during ZVS transitions.

Use Value: 344 ns t_rr and 28 A I_RRM limit reverse recovery overshoot to < 15 V, preventing secondary-side MOSFET failure.

Solar PV Inverter

Industrial Motor Drive

Use Scenario: DC link switching in string-level 5 kW photovoltaic inverter with two-level NPC topology.

IC Role / Device Role / Timing Role: Upper-leg switch in H-bridge leg, blocking 600 V DC bus while sustaining 13 A continuous current at 70 °C ambient.

Use Value: 0.55 °C/W R_thJC enables direct mounting to cold plate, reducing junction temperature by 18 °C vs. TO-220 alternatives.

Use Scenario: IGBT gate driving auxiliary supply in 15 kW servo drive with isolated DC/DC converter.

IC Role / Device Role / Timing Role: Primary switch in 300 kHz flyback controller powering isolated gate driver rails.

Use Value: 1920 pF C_iss allows stable operation with 4.7 Ω gate resistor, minimizing EMI without added RC snubbers.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP22NM60ND	600 V, 22 A, R_DS(on) = 0.19 Ω, Q_g = 95 nC, D²PAK package	Higher Q_g increases gate drive loss; lacks specified E_AS rating	Acceptable for non-avalanche-critical PFC where layout minimizes voltage spikes
IXFH22N60P	600 V, 22 A, R_DS(on) = 0.185 Ω, Q_g = 72 nC, TO-247 package	Lower Q_g improves switching speed but TO-247 requires larger PCB area and higher thermal resistance (R_thJC = 0.75 °C/W)	Preferred when board space permits and discrete heatsinking is used instead of thermal pad mounting

Compared with STP22NM60ND and IXFH22N60P, SIHB22N60ET5-GE3 delivers superior thermal performance via D2PAK thermal pad integration and verified avalanche ruggedness - making it optimal for compact, high-reliability power modules where layout space and fault tolerance are constrained.

Availability

SIHB22N60ET5-GE3 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and solar PV inverters requiring stable component supply, long-term lifecycle support, and traceable sourcing for industrial OEM programs.

Supply support for SIHB22N60ET5-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for demanding power and signal applications.

The E Series Power MOSFETs - including SIHB22N60ET5-GE3 - are engineered for high-efficiency, high-voltage switching in server, telecom, and renewable energy power conversion systems.

FAQ

What is the maximum continuous drain current for SIHB22N60ET5-GE3 at 100 °C case temperature?

The SIHB22N60ET5-GE3 supports 13 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the D2PAK package and ensures safe operation within the 150 °C maximum junction temperature limit. The SIHB22N60ET5-GE3 maintains this rating under V_GS = 10 V drive and proper PCB copper area for heat spreading.

Does SIHB22N60ET5-GE3 have a specified avalanche energy rating?

Yes, the SIHB22N60ET5-GE3 is rated for 367 mJ single-pulse unclamped inductive switching (UIS) energy at T_J = 25 °C, with test conditions of V_DD = 50 V, L = 28.2 mH, R_g = 25 Ω, and I_AS = 5.1 A. This validated avalanche capability allows the SIHB22N60ET5-GE3 to withstand transient overcurrent events without external protection circuitry in well-designed PFC and SMPS stages.

What is the gate threshold voltage range for SIHB22N60ET5-GE3?

The SIHB22N60ET5-GE3 has a gate-source threshold voltage (V_GS(th)) range of 2 V to 4 V at V_DS = V_GS and I_D = 250 μA. This logic-compatible threshold enables direct drive from standard 10 V gate drivers while ensuring sufficient noise margin against spurious turn-on. The SIHB22N60ET5-GE3 remains fully enhanced above 10 V, delivering its specified R_DS(on).

How does the body diode performance of SIHB22N60ET5-GE3 compare to standard recovery diodes?

The SIHB22N60ET5-GE3 features an integrated body diode with 344 ns reverse recovery time (t_rr) and 5.3 μC reverse recovery charge (Q_rr) at T_J = 25 °C, IS = 11 A, dI/dt = 100 A/μs, and VR = 25 V. This performance exceeds standard FRD characteristics in speed and charge, enabling the SIHB22N60ET5-GE3 to operate reliably in ZVS and resonant topologies without external diode replacement.

Is SIHB22N60ET5-GE3 compatible with lead-free reflow soldering processes?

Yes, the SIHB22N60ET5-GE3 is qualified for lead-free reflow soldering with a peak temperature of 300 °C for 10 seconds, per the manufacturer's S16-1704-Rev. J specification. Its Pb-free and halogen-free construction complies with RoHS Directive 2011/65/EU, and the SIHB22N60ET5-GE3 is marked "-GE3" to indicate green, lead-free termination finish.

SIHB22N60ET5-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: E

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 21A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 180mOhm @ 11A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 86 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1920 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 227W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263 (D2PAK)

SIHB22N60ET5-GE3 FAQ

1.How can I place an order for SIHB22N60ET5-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHB22N60ET5-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHB22N60ET5-GE3 reliable?

The price and inventory of SIHB22N60ET5-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHB22N60ET5-GE3 is usually 5 days.

3.What payment methods are accepted for SIHB22N60ET5-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHB22N60ET5-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHB22N60ET5-GE3?

SIHB22N60ET5-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHB22N60ET5-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHB22N60ET5-GE3?

For technical support, including SIHB22N60ET5-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHB22N60ET5-GE3 requirements.

6.How does Aetrix verify that SIHB22N60ET5-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHB22N60ET5-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHB22N60ET5-GE3 meets industry standards.

7.What is the process for return or replacement of SIHB22N60ET5-GE3?

All SIHB22N60ET5-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHB22N60ET5-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHB22N60ET5-GE3 part is unused and in its original packaging.

Return procedure for SIHB22N60ET5-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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