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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHB22N60S-GE3

Name: SIHB22N60S-GE3
Brand: Vishay Siliconix
SKU: SIHB22N60S-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHB22N60S-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: SIHB22N60S-GE3.pdf

Description:: MOSFET N-CH 600V 22A D2PAK

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Product details

Overview

SIHB22N60S-GE3 from Vishay Siliconix is a 600 V, 22 A N-channel enhancement-mode Power MOSFET in D2PAK (TO-263) package, featuring R_DS(on) = 0.190 Ω at V_GS = 10 V, Q_g = 98 nC max, and 100 % avalanche tested for ruggedness. It delivers ultra-low gate charge and dV/dt ruggedness for hard-switching PFC and solar inverter stages.

For engineers reviewing the SIHB22N60S-GE3 datasheet, SIHB22N60S-GE3 pinout, SIHB22N60S-GE3 application, or SIHB22N60S-GE3 equivalent, key selection criteria include its 600 V blocking rating, 250 W power dissipation capability, 37 V/ns dV/dt rating at T_J = 125 °C, and body diode recovery time of 462–690 ns under specified conditions.

Technical Context

This device belongs to Vishay's S Series Generation One high-voltage MOSFET family, optimized for high-efficiency, high-reliability switching in continuous conduction mode (CCM) and transition-mode (TM) PFC circuits. Its low R_DS(on) × Q_g figure-of-merit reduces conduction and switching losses simultaneously.

The MOSFET integrates a fast, soft-recovery body diode with t_rr = 462–690 ns and Q_rr = 8.3–16 μC, enabling robust operation in inductive switching and unclamped avalanche conditions. Thermal resistance R_thJC = 0.5 °C/W supports high-power density designs when mounted on adequately sized heatsinks.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	600 V - supports primary-side switching in 400 V DC bus systems with 50 V margin for voltage transients
R_DS(on) max @ 10 V	0.190 Ω - enables <2.2 W conduction loss at 11 A continuous drain current
Q_g max	98 nC - reduces gate drive power requirement and enables faster turn-on with moderate gate resistor values
E_AS single-pulse	690 mJ - withstands unclamped inductive energy without failure in motor control or UPS H-bridge legs
dV/dt rating	37 V/ns @ T_J = 125 °C - ensures noise immunity and prevents false turn-on in high-speed hard-switching topologies
T_J range	−55 to +150 °C - qualified for industrial and telecom environments with extended thermal cycling requirements
P_D @ T_C = 25 °C	250 W - supports high-current operation with forced-air or liquid-cooled heatsink mounting

Pinout & Package

D2PAK (TO-263) surface-mount package with exposed drain pad for thermal and electrical connection; standard 3-pin configuration (G, D, S) with drain tab electrically connected to pin 2 and thermally coupled to PCB copper area.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	Receives 10 V logic-level drive; input capacitance C_iss = 2810 pF requires careful gate driver sizing to manage rise/fall times
D (Drain)	High-side power terminal	Connected to main DC bus; exposed metal tab serves as primary thermal path and must be soldered to ≥200 mm² copper pour
S (Source)	Reference node / return path	Provides common reference for gate drive and current sensing; low-inductance layout critical for stable switching

Key Features

Feature	Design Value
100 % avalanche tested	Guarantees single-pulse E_AS = 690 mJ and repetitive EAR = 25 mJ performance across production lot
Ultra-low R_DS(on) × Q_g	Reduces total switching + conduction loss in PFC boost stages, improving efficiency by up to 0.4 % at full load
dV/dt ruggedness	37 V/ns rating prevents spurious turn-on during fast voltage transitions in bridge-leg configurations
Soft-recovery body diode	t_rr = 462–690 ns with low I_RRM (30–60 A) minimizes voltage overshoot and EMI in freewheeling paths
Lead (Pb)-free & Halogen-free	Complies with RoHS 2011/65/EU and Vishay's "Green" material categorization per doc# 99912

Applications

PFC Power Supply Stages	Solar Inverters
Use Scenario: Boost converter operating in continuous conduction mode (CCM) for front-end AC/DC conversion in server PSUs. IC Role / Device Role / Timing Role: Main switching element handling 22 A peak current at 600 V bus, synchronized to 65–100 kHz PWM controller. Use Value: Low R_DS(on) and Q_g reduce thermal stress and improve power factor correction efficiency above 98 % at full load.	Use Scenario: DC-link switching stage in string inverters converting 600–1000 V PV array output to grid-synchronized AC. IC Role / Device Role / Timing Role: High-side switch in three-phase inverter leg, subjected to repetitive unclamped inductive switching and voltage transients. Use Value: 100 % avalanche rating and 37 V/ns dV/dt ruggedness ensure reliable operation under partial shading and grid fault conditions.
UPS Systems	Motor Control Drives
Use Scenario: Bidirectional DC/AC conversion in online double-conversion UPS units with battery backup and zero-transfer-time switchover. IC Role / Device Role / Timing Role: Inverter-stage MOSFET conducting 22 A RMS current while supporting fast 10–20 kHz PWM modulation. Use Value: Soft-recovery body diode limits reverse recovery spikes during commutation, reducing snubber losses and EMI filter size.	Use Scenario: Inverter output stage driving three-phase induction motors in HVAC compressors or industrial pumps. IC Role / Device Role / Timing Role: Low-side switching device in 600 V class drives, managing regenerative braking energy via body diode conduction. Use Value: Q_rr = 8.3–16 μC and low V_SD = 1.2 V minimize heat generation during freewheeling, extending thermal margin at 100 °C case temperature.

PFC Power Supply Stages

Solar Inverters

Use Scenario: Boost converter operating in continuous conduction mode (CCM) for front-end AC/DC conversion in server PSUs.

IC Role / Device Role / Timing Role: Main switching element handling 22 A peak current at 600 V bus, synchronized to 65–100 kHz PWM controller.

Use Value: Low R_DS(on) and Q_g reduce thermal stress and improve power factor correction efficiency above 98 % at full load.

Use Scenario: DC-link switching stage in string inverters converting 600–1000 V PV array output to grid-synchronized AC.

IC Role / Device Role / Timing Role: High-side switch in three-phase inverter leg, subjected to repetitive unclamped inductive switching and voltage transients.

Use Value: 100 % avalanche rating and 37 V/ns dV/dt ruggedness ensure reliable operation under partial shading and grid fault conditions.

UPS Systems

Motor Control Drives

Use Scenario: Bidirectional DC/AC conversion in online double-conversion UPS units with battery backup and zero-transfer-time switchover.

IC Role / Device Role / Timing Role: Inverter-stage MOSFET conducting 22 A RMS current while supporting fast 10–20 kHz PWM modulation.

Use Value: Soft-recovery body diode limits reverse recovery spikes during commutation, reducing snubber losses and EMI filter size.

Use Scenario: Inverter output stage driving three-phase induction motors in HVAC compressors or industrial pumps.

IC Role / Device Role / Timing Role: Low-side switching device in 600 V class drives, managing regenerative braking energy via body diode conduction.

Use Value: Q_rr = 8.3–16 μC and low V_SD = 1.2 V minimize heat generation during freewheeling, extending thermal margin at 100 °C case temperature.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW22NM60ND	R_DS(on) = 0.22 Ω @ 10 V; Q_g = 85 nC; TO-247 package; no specified EAR rating	Higher conduction loss; larger footprint; lacks documented avalanche energy rating	Preferred where higher gate charge tolerance exists and TO-247 mechanical mounting is required
IXFH22N60P	R_DS(on) = 0.20 Ω @ 10 V; Q_g = 105 nC; TO-247 package; E_AS = 620 mJ	Slightly higher switching loss; lower avalanche energy; different gate threshold (3–5 V vs. 2–4 V)	Selected when legacy IXYS footprint compatibility is mandatory and 620 mJ E_AS suffices

Compared with STW22NM60ND and IXFH22N60P, the SIHB22N60S-GE3 offers superior R_DS(on) × Q_g trade-off, verified 690 mJ E_AS, and D2PAK surface-mount compatibility-making it optimal for space-constrained, high-efficiency PFC and inverter modules requiring repeatable avalanche robustness.

Availability

SIHB22N60S-GE3 is available at Aetrix Electronics and suitable for PFC power supply stages, solar inverters, and UPS systems requiring stable component supply, long-term lifecycle support, and traceable sourcing for industrial OEM programs.

Supply support for SIHB22N60S-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, and optoelectronics with emphasis on reliability, ruggedness, and high-power density.

The SIHB22N60S-GE3 belongs to Vishay's S Series high-voltage Power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching in industrial power conversion, renewable energy, and telecom infrastructure applications.

FAQ

What is the maximum continuous drain current rating for SIHB22N60S-GE3 at 100 °C case temperature?

The SIHB22N60S-GE3 has a continuous drain current rating of 13 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the D2PAK package and must be validated against actual board layout, copper area, and airflow conditions in the end application. The SIHB22N60S-GE3 maintains safe operation only when junction temperature remains below 150 °C under steady-state conditions.

Does SIHB22N60S-GE3 support logic-level gate drive?

No, the SIHB22N60S-GE3 is not a logic-level MOSFET. Its gate threshold voltage V_GS(th) ranges from 2.0 V to 4.0 V, but it is characterized and rated for full enhancement at V_GS = 10 V. Driving the SIHB22N60S-GE3 with only 5 V may result in incomplete turn-on and excessive R_DS(on), leading to thermal runaway. The SIHB22N60S-GE3 requires a minimum 10 V gate drive for specified R_DS(on) and switching performance.

What is the body diode forward voltage of SIHB22N60S-GE3 at 22 A and 25 °C?

The body diode forward voltage V_SD of the SIHB22N60S-GE3 is rated at ≤1.2 V at I_S = 22 A and T_J = 25 °C, with V_GS = 0 V. This low forward drop contributes to reduced conduction loss during freewheeling in half-bridge and synchronous rectifier configurations. The SIHB22N60S-GE3 body diode exhibits soft recovery behavior, minimizing voltage overshoot during reverse recovery.

Is SIHB22N60S-GE3 suitable for use in hard-switching resonant LLC converters?

The SIHB22N60S-GE3 is not optimized for zero-voltage switching (ZVS) resonant topologies like LLC due to its relatively high C_oss (1480 pF) and lack of ZVS-specific characterization. While it can operate in hard-switching LLC modes, its 98 nC Q_g and 1480 pF C_oss increase switching loss compared to devices designed for resonant operation. For LLC, the SIHB22N60S-GE3 is best applied in auxiliary or clamp circuits-not primary resonant switches.

How is the avalanche capability of SIHB22N60S-GE3 verified in production?

Every SIHB22N60S-GE3 unit undergoes 100 % single-pulse avalanche testing per the test conditions defined in the datasheet (V_DD = 50 V, L = 28.2 mH, R_g = 25 Ω, I_AS = 7 A), ensuring E_AS ≥ 690 mJ. Repetitive avalanche energy (EAR = 25 mJ) is validated through statistical process control on representative lots. This verification is documented in Vishay's reliability report for document number 91395, confirming ruggedness for real-world overvoltage events in the SIHB22N60S-GE3.

SIHB22N60S-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: S

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 22A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 190mOhm @ 11A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 110 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 2810 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 250W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263 (D2PAK)

SIHB22N60S-GE3 FAQ

1.How can I place an order for SIHB22N60S-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHB22N60S-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHB22N60S-GE3 reliable?

The price and inventory of SIHB22N60S-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHB22N60S-GE3 is usually 5 days.

3.What payment methods are accepted for SIHB22N60S-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHB22N60S-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHB22N60S-GE3?

SIHB22N60S-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHB22N60S-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHB22N60S-GE3?

For technical support, including SIHB22N60S-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHB22N60S-GE3 requirements.

6.How does Aetrix verify that SIHB22N60S-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHB22N60S-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHB22N60S-GE3 meets industry standards.

7.What is the process for return or replacement of SIHB22N60S-GE3?

All SIHB22N60S-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHB22N60S-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHB22N60S-GE3 part is unused and in its original packaging.

Return procedure for SIHB22N60S-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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